JP7059714B2 - Power converter and manufacturing method of power converter - Google Patents

Power converter and manufacturing method of power converter Download PDF

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JP7059714B2
JP7059714B2 JP2018047409A JP2018047409A JP7059714B2 JP 7059714 B2 JP7059714 B2 JP 7059714B2 JP 2018047409 A JP2018047409 A JP 2018047409A JP 2018047409 A JP2018047409 A JP 2018047409A JP 7059714 B2 JP7059714 B2 JP 7059714B2
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insulating substrate
conversion device
power conversion
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heat
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JP2019161081A (en
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貴文 野中
隆 熊谷
規央 鈴木
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Mitsubishi Electric Corp
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本発明は、パワー半導体素子を用いた電力変換装置及びその製造方法に関する。 The present invention relates to a power conversion device using a power semiconductor element and a method for manufacturing the same.

ハイブリッドカーや電気自動車では、それらが有するモーターを駆動させるために、スイッチング電源、インバータ、コンバータ等の電力変換装置が必要となる。また、このような電力変換装置には、パワー半導体素子と呼ばれる素子が用いられている。ここで、パワー半導体素子は大電流を処理し、発熱して高温になる。従って、電力変換装置では、パワー半導体素子との絶縁を確保しつつ、パワー半導体素子からの熱を放熱する機構が必要になる。さらに、このような放熱機構における絶縁の確保には、安全性の観点から二重絶縁が求められている。その一例として、特許文献１に記載したような絶縁放熱基板を備える電力変換装置（以下で、従来の電力変換装置と称す）がある。この種の絶縁放熱基板は、パワー半導体素子からの熱を外部に放熱する金属板を備えている。さらに、パワー半導体素子と金属板との間に、絶縁性を有する２つの伝熱層を挟み込むことによって、いわゆる二重絶縁を確保している。 Hybrid cars and electric vehicles require power conversion devices such as switching power supplies, inverters, and converters to drive their motors. Further, in such a power conversion device, an element called a power semiconductor element is used. Here, the power semiconductor element processes a large current and generates heat to become high temperature. Therefore, the power conversion device requires a mechanism for dissipating heat from the power semiconductor element while ensuring insulation from the power semiconductor element. Further, in order to secure insulation in such a heat dissipation mechanism, double insulation is required from the viewpoint of safety. As an example thereof, there is a power conversion device (hereinafter, referred to as a conventional power conversion device) provided with an insulated heat dissipation substrate as described in Patent Document 1. This type of insulated heat dissipation substrate includes a metal plate that dissipates heat from the power semiconductor element to the outside. Further, so-called double insulation is ensured by sandwiching two heat transfer layers having insulating properties between the power semiconductor element and the metal plate.

特開２００９－４７３１号公報Japanese Unexamined Patent Publication No. 2009-4731

従来の電力変換装置の絶縁放熱基板は、絶縁性を有する２つの伝熱層及び金属板をプレス加工することで製造されていた。このとき、金属板や伝熱層の表面のわずかな凹凸により、その境界に隙間ができる。この隙間に熱伝導率の小さい空気が入り込み、金属板と伝熱層、または２つの伝熱層の間で熱抵抗が生じる。これにより、パワー半導体素子から金属板への熱伝導が阻害され、結果として、パワー半導体素子の熱を放熱する能力が悪化するという問題があった。また、従来の電力変換装置の絶縁放熱基板は、プレス加工することで製造されていたため、プレス加工用の金型が必要になるという問題もあった。 The insulated heat dissipation substrate of the conventional power conversion device has been manufactured by pressing two heat transfer layers having insulating properties and a metal plate. At this time, a gap is formed at the boundary due to the slight unevenness on the surface of the metal plate or the heat transfer layer. Air having a low thermal conductivity enters this gap, and thermal resistance is generated between the metal plate and the heat transfer layer or the two heat transfer layers. As a result, heat conduction from the power semiconductor element to the metal plate is hindered, and as a result, there is a problem that the ability of the power semiconductor element to dissipate heat deteriorates. Further, since the insulated heat-dissipating substrate of the conventional power conversion device is manufactured by press working, there is also a problem that a die for press working is required.

本発明は、上記のような問題点を解決するためになされたものであり、電力変換装置におけるパワー半導体素子の熱を放熱する能力を向上させること、また、プレス加工用の金型が不要である電力変換装置の製造方法を提供することを目的とする。 The present invention has been made to solve the above-mentioned problems, to improve the ability to dissipate heat of a power semiconductor element in a power conversion device, and to eliminate the need for a die for press processing. It is an object of the present invention to provide a method for manufacturing a certain power conversion device.

本発明に係る電力変換装置は、パワー半導体素子と、一方主面にパワー半導体素子が取り付けられた絶縁基板と、絶縁基板の他方主面と対向する放熱部材と、絶縁基板の他方主面及び放熱部材の間に位置し、絶縁性を有する樹脂スペーサと、絶縁基板の他方主面及び放熱部材の間の残余の部分を埋め、絶縁性を有する樹脂部材と、を備える。また、絶縁基板には、一方主面及び他方主面をつなぎ、樹脂部材が進入する貫通孔が設けられている。

The power conversion device according to the present invention includes a power semiconductor element, an insulating substrate having a power semiconductor element mounted on one main surface, a heat dissipation member facing the other main surface of the insulating substrate, and heat dissipation on the other main surface of the insulating substrate. It is provided with a resin spacer which is located between the members and has an insulating property, and a resin member which fills the remaining portion between the other main surface of the insulating substrate and the heat radiating member and has an insulating property. Further, the insulating substrate is provided with a through hole connecting one main surface and the other main surface to allow the resin member to enter.

また、本発明に係る電力変換装置の製造方法は、放熱部材の上に樹脂スペーサを置く第１の載置工程と、パワー半導体素子が取り付けられた絶縁基板を樹脂スペーサの上に置く第２の載置工程と、放熱部材と絶縁基板との間に液状かつ絶縁性の樹脂部材を充填する充填工程と、を備える。 Further, the method for manufacturing a power conversion device according to the present invention includes a first mounting step of placing a resin spacer on a heat radiating member and a second mounting step of placing an insulating substrate to which a power semiconductor element is attached on the resin spacer. It includes a mounting step and a filling step of filling a liquid and insulating resin member between the heat radiating member and the insulating substrate.

上記のように構成された電力変換装置では、パワー半導体素子の熱を放熱する能力が向上し、その製造方法では、プレス加工用の金型が不要になる。 In the power conversion device configured as described above, the ability to dissipate heat from the power semiconductor element is improved, and the manufacturing method eliminates the need for a die for press working.

実施の形態１に係る電力変換装置を示す図である。It is a figure which shows the power conversion apparatus which concerns on Embodiment 1. FIG. 実施の形態１に係るパワー半導体素子及び絶縁基板を示す斜視図である。It is a perspective view which shows the power semiconductor element and the insulating substrate which concerns on Embodiment 1. FIG. 実施の形態１に係るパワー半導体素子及び絶縁基板を側面側から見た図である。It is a figure which looked at the power semiconductor element and the insulating substrate which concerns on Embodiment 1 from the side surface side. 放熱部材の一例を示す図である。It is a figure which shows an example of a heat dissipation member. 実施の形態１に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す斜視図である。It is a perspective view which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on Embodiment 1. FIG. 電力変換装置の製造工程を示す図である。It is a figure which shows the manufacturing process of a power conversion apparatus. 電力変換装置の製造工程を示す図である。It is a figure which shows the manufacturing process of a power conversion apparatus. 電力変換装置の製造工程を示す図である。It is a figure which shows the manufacturing process of a power conversion apparatus. 電力変換装置の製造工程を示す図である。It is a figure which shows the manufacturing process of a power conversion apparatus. 実施の形態２に係る電力変換装置を示す図である。It is a figure which shows the power conversion apparatus which concerns on Embodiment 2. 実施の形態３に係る電力変換装置を示す図である。It is a figure which shows the power conversion apparatus which concerns on Embodiment 3. 実施の形態３に係るパワー半導体素子及び絶縁基板を示す斜視図である。It is a perspective view which shows the power semiconductor element and the insulating substrate which concerns on Embodiment 3. FIG. 他の実施の形態に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す図である。It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. 他の実施の形態に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す図である。It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. 他の実施の形態に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す図である。It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. 他の実施の形態に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す図である。It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment. 他の実施の形態に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す図である。It is a figure which shows the power semiconductor element, the insulating substrate and the resin spacer which concerns on other embodiment.

以下で、一実施形態である電力変換装置について、添付した図面を参照しながら説明する。各実施の形態において同一の構成については、同一の符号を付す。 Hereinafter, the power conversion device according to the embodiment will be described with reference to the attached drawings. The same reference numerals are given to the same configurations in each embodiment.

実施の形態１．
図１は、実施の形態１に係る電力変換装置を示す図である。図１において、電力変換装置１００は、パワー半導体素子１０、絶縁基板２０、放熱部材４０、樹脂スペーサ５０、樹脂部材６０、及び回路基板１５０を備える。電力変換装置１００は、ハイブリッドカーや電気自動車が有するモーターを駆動させるためのスイッチング電源、インバータ、コンバータ等である。電力変換装置１００は、パワー半導体素子１０、このパワー半導体素子１０が一方主面Ｓ１（図１における上面）に取り付けられた絶縁基板２０、絶縁基板２０の他方主面Ｓ２（図１における下面）と対向する放熱部材４０、絶縁基板２０の他方主面Ｓ２と放熱部材４０との間に位置し、絶縁性を有する樹脂スペーサ５０、及び絶縁基板２０の他方主面Ｓ２及び放熱部材４０の間の残余の部分を埋め、絶縁性を有する樹脂部材６０を備えている。さらに、電力変換装置１００は、パワー半導体素子１０と接続された回路基板１５０も備えている。 Embodiment 1.
FIG. 1 is a diagram showing a power conversion device according to the first embodiment. In FIG. 1, the power conversion device 100 includes a power semiconductor element 10, an insulating substrate 20, a heat radiating member 40, a resin spacer 50, a resin member 60, and a circuit board 150. The power conversion device 100 is a switching power supply, an inverter, a converter, or the like for driving a motor of a hybrid car or an electric vehicle. The power conversion device 100 includes a power semiconductor element 10, an insulating substrate 20 to which the power semiconductor element 10 is attached to one main surface S1 (upper surface in FIG. 1), and the other main surface S2 (lower surface in FIG. 1) of the insulating substrate 20. The residual between the heat-dissipating member 40 facing each other, the resin spacer 50 having an insulating property located between the other main surface S2 of the insulating substrate 20 and the heat-dissipating member 40, and the other main surface S2 of the insulating substrate 20 and the heat-dissipating member 40. A resin member 60 having an insulating property is provided by filling the portion of the above. Further, the power conversion device 100 also includes a circuit board 150 connected to the power semiconductor element 10.

パワー半導体素子１０は、コンバータ・インバータやレギュレーター等の電源・電力の制御や供給を行うための半導体素子である。 The power semiconductor element 10 is a semiconductor element for controlling and supplying a power source / electric power of a converter / inverter, a regulator, or the like.

絶縁基板２０には、その一方主面Ｓ１に複数のパワー半導体素子１０が取り付けられる。また、絶縁基板２０は、パワー半導体素子１０からの熱を、後述する放熱部材４０へ伝える経路の一部を構成している。 A plurality of power semiconductor elements 10 are attached to the main surface S1 of the insulating substrate 20. Further, the insulating substrate 20 constitutes a part of a path for transferring heat from the power semiconductor element 10 to the heat radiating member 40 described later.

放熱部材４０は、パワー半導体素子１０からの熱を放熱部材４０の周囲の空気に放出する役割を担っている。放熱部材４０は、絶縁基板２０の他方主面Ｓ２と対向するように配置されている。また、放熱部材４０は、アルミニウムや銅などを材料とし、平板状を成している。 The heat radiating member 40 plays a role of releasing the heat from the power semiconductor element 10 to the air around the heat radiating member 40. The heat radiating member 40 is arranged so as to face the other main surface S2 of the insulating substrate 20. Further, the heat radiating member 40 is made of aluminum, copper or the like, and has a flat plate shape.

樹脂スペーサ５０は、絶縁基板２０と放熱部材４０との間に位置し、放熱部材４０側から絶縁基板２０を支持している。具体的には、樹脂スペーサ５０は、絶縁性及び耐熱性を有する材料、例えば、ＰＰＳ、ＰＴＦＥのようないわゆるエンジニアリングプラスチックを材料としており、直方体状の形状である。 The resin spacer 50 is located between the insulating substrate 20 and the heat radiating member 40, and supports the insulating substrate 20 from the heat radiating member 40 side. Specifically, the resin spacer 50 is made of a material having insulating properties and heat resistance, for example, so-called engineering plastics such as PPS and PTFE, and has a rectangular parallelepiped shape.

樹脂部材６０は、エポキシ樹脂やシリコン樹脂等の絶縁性を有する材料からなる。樹脂部材６０は、絶縁基板２０と放熱部材４０との間における残余の部分を埋めている。従って、絶縁基板２０と放熱部材４０との間は、樹脂スペーサ５０及び樹脂部材６０で満たされている。さらに、樹脂部材６０は、絶縁基板２０の一方主面Ｓ１も覆っており、絶縁基板２０に複数取り付けられたパワー半導体素子１０の間にも存在している。 The resin member 60 is made of an insulating material such as an epoxy resin or a silicon resin. The resin member 60 fills the remaining portion between the insulating substrate 20 and the heat radiating member 40. Therefore, the space between the insulating substrate 20 and the heat radiating member 40 is filled with the resin spacer 50 and the resin member 60. Further, the resin member 60 also covers one main surface S1 of the insulating substrate 20, and is also present among a plurality of power semiconductor elements 10 attached to the insulating substrate 20.

回路基板１５０は、ガラスエポキシ、ガラスコンポジット、紙フェノールなどを材料とする、いわゆるプリント基板である。また、回路基板１５０は、スイッチング電源、インバータ、コンバータなどの電力変換回路を構成する回路パターンを有している。そして、図１に示すように、この回路基板１５０にパワー半導体素子１０が接続される。具体的には、パワー半導体素子１０から伸びるリード端子を、回路基板１５０に設けられたプリント回路上のスルーホールに挿入する。そして、スルーホールを通過したリード端子の先端を半田付けすることにより、回路基板１５０にパワー半導体素子１０が接続される。 The circuit board 150 is a so-called printed circuit board made of glass epoxy, glass composite, paper phenol, or the like. Further, the circuit board 150 has a circuit pattern constituting a power conversion circuit such as a switching power supply, an inverter, and a converter. Then, as shown in FIG. 1, the power semiconductor element 10 is connected to the circuit board 150. Specifically, the lead terminal extending from the power semiconductor element 10 is inserted into a through hole on the printed circuit provided on the circuit board 150. Then, the power semiconductor element 10 is connected to the circuit board 150 by soldering the tip of the lead terminal that has passed through the through hole.

図２は、実施の形態１に係るパワー半導体素子及び絶縁基板を示す斜視図である。また、図３は、実施の形態１に係るパワー半導体素子及び絶縁基板を側面側から見た図である。図２及び図３を用いて、パワー半導体素子１０及び絶縁基板２０について、より具体的に説明する。 FIG. 2 is a perspective view showing a power semiconductor element and an insulating substrate according to the first embodiment. Further, FIG. 3 is a view of the power semiconductor element and the insulating substrate according to the first embodiment as viewed from the side surface side. The power semiconductor element 10 and the insulating substrate 20 will be described more specifically with reference to FIGS. 2 and 3.

パワー半導体素子１０は、上述のとおり、絶縁基板２０の一方主面Ｓ１上に位置している。また、パワー半導体素子１０におけるリード線が伸びる方向と反対側の面には、放熱用の金属板１２が設けられている。 As described above, the power semiconductor element 10 is located on one main surface S1 of the insulating substrate 20. Further, a metal plate 12 for heat dissipation is provided on the surface of the power semiconductor element 10 on the side opposite to the direction in which the lead wire extends.

絶縁基板２０は、金属基板２２、絶縁層２４、及び伝熱用金属パターン２６を有する。金属基板２２は、アルミニウムや銅などの金属材料からなる平板であり、金属層を構成する。また、金属基板２２は、絶縁基板２０の他方主面Ｓ２側に位置し、樹脂部材６０と接している。絶縁層２４は、金属基板２２の上面に形成された層である。また、絶縁層２４の材料は、ガラスエポキシ等の絶縁性を有する材料である。伝熱用金属パターン２６は、絶縁層２４の上面に形成された銅などの金属からなる層であり、図２に示すように、絶縁基板２０の上面側から見たときに長方形状を成している。また、伝熱用金属パターン２６には、パワー半導体素子１０が半田２８により接着される。従って、伝熱用金属パターン２６は、絶縁基板２０に取り付けられるパワー半導体素子１０の数だけ、絶縁層２４の上面に形成されている。なお、図面の見やすさのため、図２及び図３の一部のみに半田２８を記載した。 The insulating substrate 20 has a metal substrate 22, an insulating layer 24, and a heat transfer metal pattern 26. The metal substrate 22 is a flat plate made of a metal material such as aluminum or copper, and constitutes a metal layer. Further, the metal substrate 22 is located on the other main surface S2 side of the insulating substrate 20 and is in contact with the resin member 60. The insulating layer 24 is a layer formed on the upper surface of the metal substrate 22. The material of the insulating layer 24 is a material having an insulating property such as glass epoxy. The heat transfer metal pattern 26 is a layer made of a metal such as copper formed on the upper surface of the insulating layer 24, and as shown in FIG. 2, has a rectangular shape when viewed from the upper surface side of the insulating substrate 20. ing. Further, the power semiconductor element 10 is adhered to the heat transfer metal pattern 26 by the solder 28. Therefore, the heat transfer metal pattern 26 is formed on the upper surface of the insulating layer 24 as many as the number of power semiconductor elements 10 attached to the insulating substrate 20. The solder 28 is shown only in a part of FIGS. 2 and 3 for the sake of readability of the drawings.

図４は、放熱部材の一例を示す図である。放熱部材４０の形状は、実施の形態１において平板状であると述べた。ただし、図４に示すように、放熱部材４０の形状は平板に限らず、例えば、平板上に複数のフィンが並んだ形状であってもよい。 FIG. 4 is a diagram showing an example of a heat radiating member. It was stated that the shape of the heat radiating member 40 is a flat plate in the first embodiment. However, as shown in FIG. 4, the shape of the heat radiating member 40 is not limited to the flat plate, and may be, for example, a shape in which a plurality of fins are arranged on the flat plate.

図５は、実施の形態１に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す斜視図である。図５に示すように、樹脂スペーサ５０は、直方体状の形状であるとともに、水平方向に間隔を開けて規則正しく並んでいる。 FIG. 5 is a perspective view showing a power semiconductor element, an insulating substrate, and a resin spacer according to the first embodiment. As shown in FIG. 5, the resin spacers 50 have a rectangular parallelepiped shape and are regularly arranged at intervals in the horizontal direction.

以上のように構成された電力変換装置１００では、絶縁基板２０の有する絶縁層２４が第１の絶縁層として機能し、樹脂スペーサ５０及び樹脂部材６０が第２の絶縁層として機能することで、二重絶縁を確保している。 In the power conversion device 100 configured as described above, the insulating layer 24 of the insulating substrate 20 functions as the first insulating layer, and the resin spacer 50 and the resin member 60 function as the second insulating layer. Double insulation is secured.

また、電力変換装置１００では、パワー半導体素子１０が発熱すると、その熱は、絶縁基板２０の伝熱用金属パターン２６に伝わる。そして、伝熱用金属パターン２６に伝わった熱は、絶縁層２４、金属基板２２という順番で伝播する。その後、熱は、樹脂スペーサ５０及び樹脂部材６０を介して放熱部材４０に伝わり、最終的に、放熱部材４０の周囲の空気に放出される。なお、金属基板２２は、絶縁層２４からの熱を、樹脂スペーサ５０及び樹脂部材６０など金属基板２２の周囲の部材に広く伝えるヒートスプレッダーの役割を果たしている。つまり、金属基板２２は、熱拡散用の層ともいえる。 Further, in the power conversion device 100, when the power semiconductor element 10 generates heat, the heat is transferred to the heat transfer metal pattern 26 of the insulating substrate 20. Then, the heat transferred to the heat transfer metal pattern 26 propagates in the order of the insulating layer 24 and the metal substrate 22. After that, the heat is transferred to the heat radiating member 40 via the resin spacer 50 and the resin member 60, and finally is released to the air around the heat radiating member 40. The metal substrate 22 serves as a heat spreader that widely transfers heat from the insulating layer 24 to members around the metal substrate 22, such as the resin spacer 50 and the resin member 60. That is, the metal substrate 22 can be said to be a layer for heat diffusion.

図６から図９は、電力変換装置の製造工程を示す図である。本実施の形態に係る電力変換装置１００の製造方法について、図６から図９を用いて説明する。 6 to 9 are views showing a manufacturing process of the power conversion device. The manufacturing method of the power conversion device 100 according to the present embodiment will be described with reference to FIGS. 6 to 9.

電力変換装置１００の製造では、図６に示すように、あらかじめ、箱状の冶具２００内に放熱部材４０を置き、放熱部材４０を固定しておく。なお、箱状の冶具２００は、図６に示すように、真空チャンバー３００内にある。 In the manufacture of the power conversion device 100, as shown in FIG. 6, the heat radiation member 40 is placed in the box-shaped jig 200 in advance, and the heat radiation member 40 is fixed. The box-shaped jig 200 is located in the vacuum chamber 300 as shown in FIG.

次に、第１の載置工程として、図７に示すように、冶具２００によって固定された放熱部材４０の上面に樹脂スペーサ５０を置く。このとき、樹脂スペーサ５０を接着剤等で仮止めしてもよい。仮止めする場合、樹脂スペーサ５０の接着剤は、樹脂スペーサ５０と同種の材料であることが好ましい。これは、同種の材料であれば熱膨張係数が近くなるため、経年劣化による樹脂スペーサ５０の放熱部材４０からの剥離を抑制できるためである。 Next, as a first mounting step, as shown in FIG. 7, a resin spacer 50 is placed on the upper surface of the heat radiating member 40 fixed by the jig 200. At this time, the resin spacer 50 may be temporarily fixed with an adhesive or the like. In the case of temporary fixing, the adhesive of the resin spacer 50 is preferably made of the same material as the resin spacer 50. This is because if the same type of material is used, the coefficient of thermal expansion is close to each other, so that the resin spacer 50 can be suppressed from peeling from the heat radiating member 40 due to aged deterioration.

樹脂スペーサ５０を置いた後に、図８に示すように、絶縁基板２０の位置を決めるための位置決め部材２５０を放熱部材４０の上面に置く。そして、第２の載置工程として、樹脂スペーサ５０の上に絶縁基板２０を置く。このとき、絶縁基板２０には、あらかじめパワー半導体素子１０が半田付けされている。また、回路基板１５０とパワー半導体素子１０との半田付けもなされた状態である。つまり、パワー半導体素子１０、絶縁基板２０及び回路基板１５０は、それらが組み立てられた状態で樹脂スペーサ５０の上に置かれる。 After placing the resin spacer 50, as shown in FIG. 8, a positioning member 250 for determining the position of the insulating substrate 20 is placed on the upper surface of the heat radiating member 40. Then, as the second mounting step, the insulating substrate 20 is placed on the resin spacer 50. At this time, the power semiconductor element 10 is soldered to the insulating substrate 20 in advance. Further, the circuit board 150 and the power semiconductor element 10 are also soldered. That is, the power semiconductor element 10, the insulating substrate 20, and the circuit board 150 are placed on the resin spacer 50 in an assembled state.

その後、位置決め部材２５０を取り除いて、図９に示すように、パワー半導体素子１０等が置かれた箱状の冶具２００の内部に、液状の樹脂部材６０を充填する（充填工程）。このとき、液状の樹脂部材６０は、絶縁基板２０と放熱部材４０との間だけでなく、絶縁基板２０の上面も覆うように充填する。なお、樹脂部材６０は２液を混合して硬化するものでもよいし、熱で硬化するものでもよい。ただし、熱で硬化する樹脂部材６０の場合は、パワー半導体素子１０の耐熱性を考慮して、１００℃以下で硬化するものが好ましい。 After that, the positioning member 250 is removed, and as shown in FIG. 9, the inside of the box-shaped jig 200 on which the power semiconductor element 10 and the like are placed is filled with the liquid resin member 60 (filling step). At this time, the liquid resin member 60 is filled not only between the insulating substrate 20 and the heat radiating member 40 but also so as to cover the upper surface of the insulating substrate 20. The resin member 60 may be a mixture of two liquids and cured, or may be heat-cured. However, in the case of the resin member 60 that is cured by heat, it is preferable that the resin member 60 is cured at 100 ° C. or lower in consideration of the heat resistance of the power semiconductor element 10.

その後、真空引きをして、樹脂部材６０に残留した空気を抜く。そして、液状の樹脂部材６０が硬化して固体の樹脂部材６０となった後に、冶具２００を取り除くことによって、電力変換装置１００が完成する。なお、本実施の形態では、樹脂スペーサ５０を放熱部材４０の上に置く前から、箱状の冶具２００が真空チャンバー３００内にある。しかし、電力変換装置１００の製造方法はこれに限られず、樹脂部材６０の充填後に、箱状の冶具２００を真空チャンバー内３００に移してもよい。 After that, a vacuum is drawn to remove the air remaining in the resin member 60. Then, after the liquid resin member 60 is cured to become a solid resin member 60, the jig 200 is removed to complete the power conversion device 100. In the present embodiment, the box-shaped jig 200 is in the vacuum chamber 300 even before the resin spacer 50 is placed on the heat radiating member 40. However, the manufacturing method of the power conversion device 100 is not limited to this, and the box-shaped jig 200 may be transferred to the vacuum chamber 300 after the resin member 60 is filled.

ところで、絶縁基板２０は、３層が積層された構造をしているが、電力変換装置１００の製造工程において、これらを積層しプレス加工することはない。具体的には、絶縁基板２０は、金属基板２０、絶縁層２４及び伝熱用金属パターン２６となる金属のプレーン層が積層された状態で市販されていることが一般的である。ここで、電力変換装置１００の製造に際して、絶縁基板２０に必要な処理は、伝熱用金属パターン２６の形成である。伝熱用金属パターン２６の形成は、絶縁基板２０のプレーン層に、伝熱用金属パターン２６に対応するマスキングを施す。そして、プレーン層をエッチングし、その後にマスキングを除去することで、伝熱用金属パターン２６が、絶縁基板２０に形成される。このように、電力変換装置１００の製造工程において、絶縁基板２０には、エッチングによる伝熱用金属パターン２６の形成のみを行うだけであり、絶縁基板２０を構成する層を積層しプレス加工することはない。 By the way, although the insulating substrate 20 has a structure in which three layers are laminated, these are not laminated and press-processed in the manufacturing process of the power conversion device 100. Specifically, the insulating substrate 20 is generally marketed in a state where a metal substrate 20, an insulating layer 24, and a plain metal layer to be a heat transfer metal pattern 26 are laminated. Here, in the manufacture of the power conversion device 100, the process required for the insulating substrate 20 is the formation of the heat transfer metal pattern 26. To form the heat transfer metal pattern 26, the plain layer of the insulating substrate 20 is masked corresponding to the heat transfer metal pattern 26. Then, by etching the plain layer and then removing the masking, the heat transfer metal pattern 26 is formed on the insulating substrate 20. As described above, in the manufacturing process of the power conversion device 100, only the heat transfer metal pattern 26 is formed on the insulating substrate 20 by etching, and the layers constituting the insulating substrate 20 are laminated and press-processed. There is no.

電力変換装置１００では、従来の電力変換装置と比較して、パワー半導体素子からの熱を放熱する能力が高い。具体的には、従来の電力変換装置は、固体である金属板及び絶縁性を有する２つの伝熱層をプレス加工することによって作製されていた。このとき、金属板や伝熱層の表面のわずかな凹凸により、その境界に隙間ができる。この隙間に熱伝導率の小さい空気が入り込み、金属板と伝熱層、または２つの伝熱層の間で熱抵抗が生じる。これにより、パワー半導体素子から金属板への熱伝導が阻害され、結果として、パワー半導体素子の熱を放熱する能力が悪化する。一方、本実施形態の電力変換装置１００では、絶縁基板２０と放熱部材４０との間に、樹脂部材６０が存在する。樹脂部材６０は、電力変換装置１００の製造過程において液体であったため、絶縁基板２０や放熱部材４０の表面における細かな凹凸に入り込む。従って、絶縁基板２０及び樹脂部材６０の境界や、樹脂部材６０及び放熱部材４０の境界に隙間が発生しづらい。結果として、絶縁基板２０及び樹脂部材６０の境界における隙間や、樹脂部材６０及び放熱部材４０の境界の隙間への空気の流入を抑制できる。これにより、電力変換装置１００では、従来の電力変換装置のような固体表面の凹凸に基づく熱抵抗の発生が抑制され、パワー半導体素子１０からの熱をスムーズに放熱部材４０に伝えることができる。従って、電力変換装置１００では、従来の電力変換装置と比較して、パワー半導体素子の熱を放熱する能力が高くなる。 The power conversion device 100 has a higher ability to dissipate heat from a power semiconductor element as compared with a conventional power conversion device. Specifically, the conventional power conversion device has been manufactured by pressing a solid metal plate and two heat transfer layers having insulating properties. At this time, a gap is formed at the boundary due to the slight unevenness on the surface of the metal plate or the heat transfer layer. Air having a low thermal conductivity enters this gap, and thermal resistance is generated between the metal plate and the heat transfer layer or the two heat transfer layers. As a result, heat conduction from the power semiconductor element to the metal plate is hindered, and as a result, the ability of the power semiconductor element to dissipate heat deteriorates. On the other hand, in the power conversion device 100 of the present embodiment, the resin member 60 exists between the insulating substrate 20 and the heat radiating member 40. Since the resin member 60 was a liquid in the manufacturing process of the power conversion device 100, it penetrates into fine irregularities on the surface of the insulating substrate 20 and the heat radiating member 40. Therefore, it is difficult for a gap to occur at the boundary between the insulating substrate 20 and the resin member 60 and the boundary between the resin member 60 and the heat radiating member 40. As a result, it is possible to suppress the inflow of air into the gap at the boundary between the insulating substrate 20 and the resin member 60 and the gap between the boundary between the resin member 60 and the heat radiating member 40. As a result, in the power conversion device 100, the generation of thermal resistance due to the unevenness of the solid surface as in the conventional power conversion device is suppressed, and the heat from the power semiconductor element 10 can be smoothly transferred to the heat dissipation member 40. Therefore, the power conversion device 100 has a higher ability to dissipate heat from the power semiconductor element as compared with the conventional power conversion device.

また、電力変換装置１００では、プレス加工用の金型が不要になる。具体的には、従来の電力変換装置では、パワー半導体素子からの熱を放熱する金属板及び絶縁性を有する２つの伝熱層をプレス加工することにより作製されていた。従って、プレス加工用の金型が必要であった。一方、電力変換装置１００の作製では、上述の通り、放熱部材４０の上に樹脂スペーサ５０を置き、その上に絶縁基板２０を置く。そして、液状の樹脂部材６０を充填することで、絶縁基板２０と放熱部材４０との間に樹脂部材６０が形成され、電力変換装置１００が完成する。つまり、電力変換装置１００の作製では、プレス加工を用いていない。従って、電力変換装置１００では、金型が不要になる。 Further, the power conversion device 100 eliminates the need for a die for press working. Specifically, in a conventional power conversion device, a metal plate that dissipates heat from a power semiconductor element and two heat transfer layers having an insulating property are press-processed. Therefore, a die for press working was required. On the other hand, in the production of the power conversion device 100, as described above, the resin spacer 50 is placed on the heat radiating member 40, and the insulating substrate 20 is placed on the resin spacer 50. Then, by filling the liquid resin member 60, the resin member 60 is formed between the insulating substrate 20 and the heat radiating member 40, and the power conversion device 100 is completed. That is, press working is not used in the production of the power conversion device 100. Therefore, the power converter 100 does not require a mold.

さらに、電力変換装置１００の製造は、真空チャンバー３００内で行われる。そして、電力変換装置１００の製造では、液状の樹脂部材６０の充填後に、真空引きをして、樹脂部材６０に残留した空気を抜く。従って、この製造方法によれば、硬化後の樹脂部材６０には、空気が残留しづらいため、空気の残留による熱抵抗の増加を抑制できる。従って、電力変換装置１００の製造方法によれば、その製造過程で真空引きをしない場合と比較して、パワー半導体素子１０の熱を放熱する能力を高くすることができる。 Further, the power conversion device 100 is manufactured in the vacuum chamber 300. Then, in the manufacture of the power conversion device 100, after filling the liquid resin member 60, a vacuum is drawn to remove the air remaining in the resin member 60. Therefore, according to this manufacturing method, since it is difficult for air to remain in the cured resin member 60, it is possible to suppress an increase in thermal resistance due to the residual air. Therefore, according to the manufacturing method of the power conversion device 100, the ability to dissipate the heat of the power semiconductor element 10 can be increased as compared with the case where the vacuum is not drawn in the manufacturing process.

これに加え、樹脂部材６０における空気の残留の抑制は、電力変換装置１００における絶縁性の向上にも寄与する。例えば、樹脂部材６０に空気が残留していた場合を想定する。この場合、電力変換装置１００が高電圧で作動すると、樹脂部材６０に残留した空気に電界が集中し、コロナ放電を招くおそれがある。しかし、電力変換装置１００では、上述のように、樹脂部材６０における空気の残留を抑制している。従って、電力変換装置１００では、コロナ放電が起こりにくく絶縁性が良好である。 In addition to this, the suppression of residual air in the resin member 60 also contributes to the improvement of the insulating property in the power conversion device 100. For example, it is assumed that air remains in the resin member 60. In this case, when the power conversion device 100 operates at a high voltage, the electric field concentrates on the air remaining in the resin member 60, which may lead to corona discharge. However, in the power conversion device 100, as described above, the residual air in the resin member 60 is suppressed. Therefore, in the power conversion device 100, corona discharge is unlikely to occur and the insulating property is good.

ところで、電力変換装置１００では、樹脂部材６０が、絶縁基板２０と放熱部材４０との間だけでなく、絶縁基板２０の一方主面Ｓ１も覆っており、絶縁基板２０に複数取り付けられたパワー半導体素子１０の間にも存在している。ここで、樹脂部材６０が絶縁基板２０の一方主面Ｓ１を覆っていることにより、一方主面Ｓ１が覆われていない場合と比較して、絶縁基板２０の強度を向上させることができる。また、樹脂部材６０は、エポキシ樹脂やシリコン樹脂等の空気よりも高い絶縁性を有する材料からなる。従って、パワー半導体素子１０の間に樹脂部材６０が存在する電力変換装置１００では、パワー半導体素子１０の間に空気がある場合と比較して、パワー半導体素子１０の間の絶縁性が高くなる。また、パワー半導体素子１０の間の絶縁性が高くなることで、パワー半導体素子１０同士の距離を縮めることができる。これは、電力変換装置の小型化に寄与する。 By the way, in the power conversion device 100, the resin member 60 covers not only between the insulating substrate 20 and the heat radiating member 40 but also one main surface S1 of the insulating substrate 20, and a plurality of power semiconductors attached to the insulating substrate 20. It also exists between the elements 10. Here, since the resin member 60 covers one main surface S1 of the insulating substrate 20, the strength of the insulating substrate 20 can be improved as compared with the case where the one main surface S1 is not covered. Further, the resin member 60 is made of a material having higher insulating properties than air, such as epoxy resin and silicon resin. Therefore, in the power conversion device 100 in which the resin member 60 is present between the power semiconductor elements 10, the insulation between the power semiconductor elements 10 is higher than that in the case where there is air between the power semiconductor elements 10. Further, by increasing the insulating property between the power semiconductor elements 10, the distance between the power semiconductor elements 10 can be shortened. This contributes to the miniaturization of the power conversion device.

実施の形態２．
図１０は、実施の形態２に係る電力変換装置１００Ａを示す図である。実施の形態２である電力変換装置１００Ａと実施の形態１である電力変換装置１００との主たる相違点は、絶縁基板の絶縁層としてセラミック基板３２が用いられている点、及び放熱部材から絶縁基板に向かって伸びる突起７０を有する点である。以下で、より具体的に説明する。 Embodiment 2.
FIG. 10 is a diagram showing a power conversion device 100A according to the second embodiment. The main differences between the power conversion device 100A according to the second embodiment and the power conversion device 100 according to the first embodiment are that the ceramic substrate 32 is used as the insulating layer of the insulating substrate and that the heat radiating member to the insulating substrate is used. It is a point having a protrusion 70 extending toward. Hereinafter, a more specific description will be given.

電力変換装置１００Ａの絶縁基板２０Ａは、いわゆるダイレクトボンデッドカッパー基板であり、セラミック基板３２、熱拡散用層３４、及び伝熱用金属パターン２６を備えている。なお、絶縁基板２０Ａについても、熱拡散用層３４となる金属のプレーン層、セラミック基板３２及び伝熱用金属パターン２６となる金属のプレーン層が積層された状態で市販されている。電力変換装置１００Ａの製造工程において、絶縁基板２０Ａ対して行われる処理は、実施の形態１と同様に、エッチングによる金属層の処理を行うだけであり、絶縁基板２０Ａを構成する層を積層しプレス加工することはない。 The insulating substrate 20A of the power conversion device 100A is a so-called direct bonded copper substrate, and includes a ceramic substrate 32, a heat diffusion layer 34, and a heat transfer metal pattern 26. The insulating substrate 20A is also commercially available in a state in which a metal plane layer serving as a heat diffusion layer 34, a ceramic substrate 32, and a metal plane layer serving as a heat transfer metal pattern 26 are laminated. In the manufacturing process of the power conversion device 100A, the processing performed on the insulating substrate 20A is only the processing of the metal layer by etching as in the first embodiment, and the layers constituting the insulating substrate 20A are laminated and pressed. There is no processing.

セラミック基板３２は、セラミック化合物を基材とし、絶縁性を有する。従って、セラミック基板３２は、絶縁基板２０Ａにおける絶縁層としても機能する。 The ceramic substrate 32 is based on a ceramic compound and has an insulating property. Therefore, the ceramic substrate 32 also functions as an insulating layer in the insulating substrate 20A.

熱拡散用層３４は、セラミック基板３２の下面側に設けられた金属の層である。熱拡散用層３４の材料は、アルミニウムや銅などである。そして、熱拡散用層３４は、セラミック基板３２を介して伝わったパワー半導体素子１０からの熱を周囲に広く伝えるヒートスプレッダーとして機能する。なお、熱拡散用層３４の面積はセラミック基板３２の面積よりも小さく、熱拡散用層３４の外縁は、セラミック基板３２の外縁に達していない。 The heat diffusion layer 34 is a metal layer provided on the lower surface side of the ceramic substrate 32. The material of the heat diffusion layer 34 is aluminum, copper, or the like. The heat diffusion layer 34 functions as a heat spreader that widely transfers the heat transmitted from the power semiconductor element 10 transmitted through the ceramic substrate 32 to the surroundings. The area of the heat diffusion layer 34 is smaller than the area of the ceramic substrate 32, and the outer edge of the heat diffusion layer 34 does not reach the outer edge of the ceramic substrate 32.

伝熱用金属パターン２６は、セラミック基板３２の上面に設けられている点が、実施の形態１と異なる。それ以外の点は実施の形態１と同様であるため、ここでの説明を省略する。 The heat transfer metal pattern 26 is different from the first embodiment in that it is provided on the upper surface of the ceramic substrate 32. Since other points are the same as those of the first embodiment, the description thereof will be omitted here.

また、電力変換装置１００Ａの放熱部材４０Ａには、放熱部材４０Ａから絶縁基板２０Ａに向かって伸びる突起７０が設けられている。突起７０は、放熱部材４０Ａと一体である。そして、突起７０の側面は、絶縁基板２０Ａの側面、具体的には、絶縁基板２０Ａにおいて絶縁層として機能するセラミック基板３２の側面と接触している。 Further, the heat radiating member 40A of the power conversion device 100A is provided with a protrusion 70 extending from the heat radiating member 40A toward the insulating substrate 20A. The protrusion 70 is integrated with the heat radiating member 40A. The side surface of the protrusion 70 is in contact with the side surface of the insulating substrate 20A, specifically, the side surface of the ceramic substrate 32 that functions as an insulating layer in the insulating substrate 20A.

以上のように構成された電力変換装置１００Ａは、実施の形態１である電力変換装置１００よりも耐熱性が良好である。具体的には、実施の形態１である電力変換装置１００の絶縁層２４は、エポキシ樹脂等で形成されており、その耐熱温度は１１０℃～２５０℃である。一方、実施の形態２において絶縁層として機能するセラミック基板３２は、その基材がセラミック化合物であるため、耐熱温度は８００℃程度となる。従って、電力変換装置１００Ａは、実施の形態１である電力変換装置１００よりも耐熱性が良好である。また、絶縁基板２０Ａは、セラミック基板３２を用いたことで、金属基板とエポキシ樹脂の絶縁層からなる絶縁基板２０よりも、一般的に、熱膨張、耐熱衝撃性、熱伝導率、高温強度など優れた特性を示す。 The power conversion device 100A configured as described above has better heat resistance than the power conversion device 100 according to the first embodiment. Specifically, the insulating layer 24 of the power conversion device 100 according to the first embodiment is made of an epoxy resin or the like, and its heat resistant temperature is 110 ° C to 250 ° C. On the other hand, since the base material of the ceramic substrate 32 that functions as the insulating layer in the second embodiment is a ceramic compound, the heat resistant temperature is about 800 ° C. Therefore, the power conversion device 100A has better heat resistance than the power conversion device 100 according to the first embodiment. Further, since the insulating substrate 20A uses the ceramic substrate 32, the insulating substrate 20 generally has higher thermal expansion, thermal impact resistance, thermal conductivity, high temperature strength, etc. than the insulating substrate 20 composed of an insulating layer of a metal substrate and an epoxy resin. Shows excellent properties.

また、電力変換装置１００Ａでは、放熱部材４０Ａから絶縁基板２０Ａに向かって伸びる突起７０が設けられ、この側面が、セラミック基板３２の側面と接触している。突起７０は、電力変換装置１００Ａの製造工程において、絶縁基板２０Ａを樹脂スペーサ５０の上に置く際に、絶縁基板２０Ａの位置決め部材として使用できる。従って、電力変換装置１００Ａでは、その製造工程において、絶縁基板２０Ａの位置決め部材、例えば、実施の形態１における位置決め部材２５０を別途準備する必要がなく、製造工程を簡素化できる。なお、突起７０が接しているのはセラミック基板３２であるため、突起７０を介してパワー半導体素子１０から電気が流れることはない。 Further, in the power conversion device 100A, a protrusion 70 extending from the heat radiating member 40A toward the insulating substrate 20A is provided, and the side surface thereof is in contact with the side surface of the ceramic substrate 32. The protrusion 70 can be used as a positioning member for the insulating substrate 20A when the insulating substrate 20A is placed on the resin spacer 50 in the manufacturing process of the power conversion device 100A. Therefore, in the power conversion device 100A, it is not necessary to separately prepare the positioning member of the insulating substrate 20A, for example, the positioning member 250 according to the first embodiment in the manufacturing process, and the manufacturing process can be simplified. Since the protrusion 70 is in contact with the ceramic substrate 32, electricity does not flow from the power semiconductor element 10 through the protrusion 70.

電力変換装置１００Ａにおける他の構成は、電力変換装置１００と同様である。従って、絶縁基板２０Ａ及び突起７０に関する説明以外の説明は、電力変換装置１００での説明のとおりである。 Other configurations in the power conversion device 100A are the same as those in the power conversion device 100. Therefore, the description other than the description regarding the insulating substrate 20A and the protrusion 70 is as described in the power conversion device 100.

実施の形態３．
図１１は、実施の形態３に係る電力変換装置を示す図である。実施の形態３である電力変換装置１００Ｂと実施の形態１である電力変換装置１００との主たる相違点は、絶縁基板の周囲に壁８０が設けられている点、及び絶縁基板に貫通孔９０が設けられている点である。 Embodiment 3.
FIG. 11 is a diagram showing a power conversion device according to the third embodiment. The main difference between the power conversion device 100B according to the third embodiment and the power conversion device 100 according to the first embodiment is that a wall 80 is provided around the insulating substrate and a through hole 90 is provided in the insulating substrate. It is a point provided.

壁８０は、絶縁基板２０の側面側の周囲を取り囲むように設けられている。壁８０は、放熱部材４０と一体である。これにより、電力変換装置１００Ｂでは、その製造工程において、充填された液状の樹脂部材６０を堰き止めるための部材として、壁８０を使用できる。従って、電力変換装置１００Ｂでは、その製造工程において、液状の樹脂部材６０を堰き止めるための部材、例えば、実施の形態１における冶具２００のような部材を別途準備する必要がなく、製造工程を簡素化できる。なお、壁８０は、放熱部材４０と別体でもよい。 The wall 80 is provided so as to surround the periphery of the side surface side of the insulating substrate 20. The wall 80 is integrated with the heat dissipation member 40. As a result, in the power conversion device 100B, the wall 80 can be used as a member for blocking the filled liquid resin member 60 in the manufacturing process. Therefore, in the power conversion device 100B, it is not necessary to separately prepare a member for blocking the liquid resin member 60, for example, a member such as the jig 200 in the first embodiment, and the manufacturing process is simplified. Can be converted. The wall 80 may be separate from the heat radiating member 40.

電力変換装置１００Ｂの絶縁基板２０Ｂには、絶縁基板２０Ｂの一方主面Ｓ１及び他方主面Ｓ２をつなぐ貫通孔９０が設けられている。これにより、電力変換装置１００Ｂでは、液状の樹脂部材６０を充填する際に絶縁基板２０Ｂと放熱部材４０との間に入り込む空気が外部へ抜けやすくなる。従って、電力変換装置１００Ｂでは、電力変換装置１００と比較して、絶縁基板２０と放熱部材４０との間の空気の残留をさらに抑制でき、絶縁性や放熱性が良好である。なお、貫通孔９０から空気が抜ける過程で、貫通孔９０には樹脂部材６０が進入することになる。 The insulating substrate 20B of the power conversion device 100B is provided with a through hole 90 for connecting one main surface S1 and the other main surface S2 of the insulating substrate 20B. As a result, in the power conversion device 100B, the air that enters between the insulating substrate 20B and the heat radiating member 40 when the liquid resin member 60 is filled is easily released to the outside. Therefore, in the power conversion device 100B, as compared with the power conversion device 100, the residual air between the insulating substrate 20 and the heat radiating member 40 can be further suppressed, and the insulating property and the heat radiating property are good. The resin member 60 enters the through hole 90 in the process of releasing air from the through hole 90.

図１２は、実施の形態３に係るパワー半導体素子及び絶縁基板を示す斜視図である。貫通孔９０は、絶縁基板２０Ｂ上において、複数取り付けられたパワー半導体素子１０の間に位置している。また、貫通孔９０の形状は、長穴及び丸穴である。ただし、貫通孔９０の形状は、これに限られず四角穴など他の形状であっても構わない。 FIG. 12 is a perspective view showing the power semiconductor element and the insulating substrate according to the third embodiment. The through hole 90 is located on the insulating substrate 20B between the plurality of attached power semiconductor elements 10. The shape of the through hole 90 is a long hole and a round hole. However, the shape of the through hole 90 is not limited to this, and may be another shape such as a square hole.

電力変換装置１００Ｂにおける他の構成は、電力変換装置１００と同様である。従って、壁８０及び貫通孔９０に関する説明以外の説明は、電力変換装置１００での説明のとおりである。 Other configurations in the power conversion device 100B are the same as those in the power conversion device 100. Therefore, the description other than the description regarding the wall 80 and the through hole 90 is the same as the description in the power conversion device 100.

他の実施形態．
図１３から図１７は、他の実施の形態に係るパワー半導体素子、絶縁基板及び樹脂スペーサを示す図である。本発明に係る電力変換装置は、前記実施形態に係る電力変換装置に限らずその要旨の範囲内において変更可能である。例えば、図１３に示すように、立方体上の樹脂スペーサ５０Ａであってもよいし、図１４に示すように、円柱状の樹脂スペーサ５０Ｂであってもよい。 Other embodiments.
13 to 17 are views showing power semiconductor devices, insulating substrates, and resin spacers according to other embodiments. The power conversion device according to the present invention is not limited to the power conversion device according to the embodiment, and can be changed within the scope of the gist thereof. For example, as shown in FIG. 13, the resin spacer 50A on a cube may be used, or as shown in FIG. 14, a columnar resin spacer 50B may be used.

また、図１５に示す樹脂スペーサ５０Ｃのように、直方体の中心を円柱状にくり抜いた形状としてもよい。この場合、樹脂スペーサ５０の円柱状にくり抜かれた部分に樹脂部材６０が充填されることになる。また、図１５において、２つの貫通穴９０のうち、一方は樹脂部材６０の充填用であり、他方は空気抜き用ある。このとき、絶縁基板２０と放熱部材４０との間において、樹脂スペーサ５０Ｃの占める体積の割合を樹脂部材６０よりも大きくしてもよい。 Further, as in the resin spacer 50C shown in FIG. 15, the center of the rectangular parallelepiped may be hollowed out in a columnar shape. In this case, the resin member 60 is filled in the cylindrically hollowed out portion of the resin spacer 50. Further, in FIG. 15, of the two through holes 90, one is for filling the resin member 60 and the other is for bleeding air. At this time, the ratio of the volume occupied by the resin spacer 50C between the insulating substrate 20 and the heat radiating member 40 may be larger than that of the resin member 60.

また、図１６に示す樹脂スペーサ５０Ｄのように、直方体の中心を角柱状にくり抜いた形状としてもよい。図１６に示される２つの貫通穴９０も、一方は樹脂部材６０の充填用であり、他方は空気抜き用ある。 Further, as in the resin spacer 50D shown in FIG. 16, the center of the rectangular parallelepiped may be hollowed out into a prismatic shape. The two through holes 90 shown in FIG. 16 also have one for filling the resin member 60 and the other for bleeding air.

これに加え、図１７に示す樹脂スペーサ５０Ｅのように、絶縁基板２０と放熱部材４０との間において樹脂スペーサの占める体積の割合を樹脂部材６０よりも小さくした上で、樹脂スペーサ５０Ｅによって囲まれる樹脂部材６０の形状を角柱状にしてもよい。 In addition to this, as in the resin spacer 50E shown in FIG. 17, the ratio of the volume occupied by the resin spacer between the insulating substrate 20 and the heat radiating member 40 is smaller than that of the resin member 60, and the resin spacer 50E surrounds the insulating substrate 20. The shape of the resin member 60 may be prismatic.

また、樹脂スペーサ５０及び樹脂部材６０によって構成される第２の絶縁層の厚みは、電力変換装置の用途に応じて変えてもよい。例えば、自動車用の電力変換装置が扱う電圧は、ＤＣ１２Ｖ～ＤＣ１５００Ｖ、ＡＣ１０００Ｖ程度である。この場合、樹脂スペーサ５０及び樹脂部材６０によって構成される第２の絶縁層の厚みは、１ｍｍ以下でも構わない。なお、樹脂スペーサ５０及び樹脂部材６０によって構成される第２の絶縁層の厚みを薄くすることで、絶縁基板２０と放熱部材４０との間における熱抵抗が減少するため、パワー半導体素子１０の熱を放熱する能力を高めることができる。 Further, the thickness of the second insulating layer composed of the resin spacer 50 and the resin member 60 may be changed depending on the application of the power conversion device. For example, the voltage handled by the power conversion device for automobiles is about DC12V to DC1500V and AC1000V. In this case, the thickness of the second insulating layer composed of the resin spacer 50 and the resin member 60 may be 1 mm or less. By reducing the thickness of the second insulating layer composed of the resin spacer 50 and the resin member 60, the thermal resistance between the insulating substrate 20 and the heat radiating member 40 is reduced, so that the heat of the power semiconductor element 10 is reduced. The ability to dissipate heat can be enhanced.

以上のように、本発明は、電力変換装置に有用であり、特に、プレス加工用の金型が不要である点において優れている。 As described above, the present invention is useful for a power conversion device, and is particularly excellent in that a die for press working is not required.

１０ パワー半導体素子、 ２０，２０Ａ，２０Ｂ 絶縁基板、２２ 金属基板（金属層）、２４ 絶縁層、３２ セラミック基板（絶縁層）、３４ 熱拡散用層（金属層）、４０，４０Ａ 放熱部材、５０，５０Ａ，５０Ｂ，５０Ｃ，５０Ｄ 樹脂スペーサ、６０ 樹脂部材、７０ 突起、８０ 壁、９０ 貫通孔、１００，１００Ａ，１００Ｂ 電力変換装置、３００ 真空チャンバー、Ｓ１ 一方主面、Ｓ２ 他方主面 10 Power semiconductor devices, 20, 20A, 20B insulation substrate, 22 metal substrate (metal layer), 24 insulation layer, 32 ceramic substrate (insulation layer), 34 heat diffusion layer (metal layer), 40, 40A heat dissipation member, 50 , 50A, 50B, 50C, 50D resin spacer, 60 resin member, 70 protrusion, 80 wall, 90 through hole, 100, 100A, 100B power converter, 300 vacuum chamber, S1 one main surface, S2 other main surface

Claims (8)

パワー半導体素子と、
一方主面に前記パワー半導体素子が取り付けられた絶縁基板と、
前記絶縁基板の他方主面と対向する放熱部材と、
前記他方主面及び前記放熱部材の間に位置し、絶縁性を有する樹脂スペーサと、
前記他方主面及び前記放熱部材の間の残余の部分を埋め、絶縁性を有する樹脂部材と、
を備え、
前記絶縁基板には、前記一方主面及び前記他方主面をつなぎ、前記樹脂部材が進入する貫通孔が設けられている電力変換装置。 Power semiconductor devices and
On the other hand, the insulating substrate on which the power semiconductor element is mounted on the main surface and
A heat radiating member facing the other main surface of the insulating substrate,
A resin spacer located between the other main surface and the heat radiating member and having an insulating property,
A resin member having an insulating property, which fills the remaining portion between the other main surface and the heat radiating member,
Equipped with
A power conversion device in which the insulating substrate is provided with a through hole connecting the one main surface and the other main surface to allow the resin member to enter. 前記絶縁基板に取り付けられた前記パワー半導体素子の数は、複数であり、
前記樹脂部材は、前記絶縁基板に取り付けられた複数の前記パワー半導体素子の間にも存在する、請求項１に記載の電力変換装置。 The number of the power semiconductor elements attached to the insulating substrate is a plurality.
The power conversion device according to claim 1, wherein the resin member also exists between the plurality of power semiconductor elements attached to the insulating substrate. 前記絶縁基板における絶縁層の材料はセラミックである、請求項１又は請求項２に記載の電力変換装置。 The power conversion device according to claim 1 or 2, wherein the material of the insulating layer in the insulating substrate is ceramic. 前記放熱部材には、前記絶縁基板に向かって伸び、前記絶縁層の側面と接触する突起が設けられている、請求項３に記載の電力変換装置。 The power conversion device according to claim 3, wherein the heat radiating member is provided with a protrusion extending toward the insulating substrate and in contact with the side surface of the insulating layer. 前記絶縁基板は、前記樹脂部材と接する金属層を有する、請求項１から請求項４のいずれか１項に記載の電力変換装置。 The power conversion device according to any one of claims 1 to 4, wherein the insulating substrate has a metal layer in contact with the resin member. 前記絶縁基板の側面を取り囲むように設けられた壁を更に備える、請求項１から請求項５のいずれか１項に記載の電力変換装置。 The power conversion device according to any one of claims 1 to 5 , further comprising a wall provided so as to surround the side surface of the insulating substrate. 放熱部材の上に絶縁性の樹脂スペーサを置く第１の載置工程と、
パワー半導体素子が取り付けられた絶縁基板を前記樹脂スペーサの上に置く第２の載置工程と、
前記放熱部材と前記絶縁基板との間に液状かつ絶縁性の樹脂部材を充填する充填工程と、
を備える、電力変換装置の製造方法。 The first mounting process of placing an insulating resin spacer on the heat radiating member,
The second mounting step of placing the insulating substrate to which the power semiconductor element is attached on the resin spacer, and
A filling step of filling a liquid and insulating resin member between the heat radiating member and the insulating substrate,
A method of manufacturing a power conversion device. 前記放熱部材及び前記絶縁基板は真空チャンバー内に置かれ、
前記充填工程後に真空引きを行う工程を更に備える、請求項７に記載の電力変換装置の製造方法。 The heat radiation member and the insulating substrate are placed in a vacuum chamber, and the heat radiation member and the insulating substrate are placed in a vacuum chamber.
The method for manufacturing a power conversion device according to claim 7 , further comprising a step of performing evacuation after the filling step.
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