JP7036204B2 - キャパシタおよびHfO2膜の製造方法 - Google Patents
キャパシタおよびHfO2膜の製造方法 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 title claims description 172
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000034 method Methods 0.000 title description 9
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 title description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 43
- 229910044991 metal oxide Inorganic materials 0.000 claims description 41
- 150000004706 metal oxides Chemical class 0.000 claims description 41
- 229910052758 niobium Inorganic materials 0.000 claims description 34
- 229910052746 lanthanum Inorganic materials 0.000 claims description 24
- 239000003381 stabilizer Substances 0.000 claims description 17
- 229910052735 hafnium Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- 229910021480 group 4 element Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 description 44
- 239000010408 film Substances 0.000 description 42
- 230000005684 electric field Effects 0.000 description 36
- 239000000126 substance Substances 0.000 description 22
- 239000013078 crystal Substances 0.000 description 17
- 230000005620 antiferroelectricity Effects 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 150000003839 salts Chemical class 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- -1 for example Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- HMKGKDSPHSNMTM-UHFFFAOYSA-N hafnium;propan-2-ol Chemical compound [Hf].CC(C)O.CC(C)O.CC(C)O.CC(C)O HMKGKDSPHSNMTM-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- JITPFBSJZPOLGT-UHFFFAOYSA-N cerium(3+);propan-2-olate Chemical compound [Ce+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] JITPFBSJZPOLGT-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- WZVIPWQGBBCHJP-UHFFFAOYSA-N hafnium(4+);2-methylpropan-2-olate Chemical compound [Hf+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] WZVIPWQGBBCHJP-UHFFFAOYSA-N 0.000 description 1
- ZFMIEZYJPABXSU-UHFFFAOYSA-J hafnium(4+);tetraacetate Chemical compound [Hf+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O ZFMIEZYJPABXSU-UHFFFAOYSA-J 0.000 description 1
- TZNXTUDMYCRCAP-UHFFFAOYSA-N hafnium(4+);tetranitrate Chemical compound [Hf+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O TZNXTUDMYCRCAP-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- SORGMJIXNUWMMR-UHFFFAOYSA-N lanthanum(3+);propan-2-olate Chemical compound [La+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SORGMJIXNUWMMR-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- LZRGWUCHXWALGY-UHFFFAOYSA-N niobium(5+);propan-2-olate Chemical compound [Nb+5].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] LZRGWUCHXWALGY-UHFFFAOYSA-N 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- KWUQLGUXYUKOKE-UHFFFAOYSA-N propan-2-ol;tantalum Chemical compound [Ta].CC(C)O.CC(C)O.CC(C)O.CC(C)O.CC(C)O KWUQLGUXYUKOKE-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Memories (AREA)
Description
図1に、第1実施形態にかかるキャパシタ100を示す。ただし、図1は、キャパシタ100の断面図である。
第2実施形態にかかるキャパシタ210、220、230、240,250、260、270、280を作製した。符号210~280は試料番号である。図示しないが、いずれのキャパシタも、図1に示した第1実施形態にかかるキャパシタ100と同一の構造からなる。ただし、キャパシタ210~280のうち、キャパシタ210は比較例である。
第3実施形態にかかるキャパシタ310、320を作製した。符号310、320は試料番号である。図示しないが、いずれのキャパシタも、図1に示した第1実施形態にかかるキャパシタ100と同一の構造からなる。
第4実施形態にかかるキャパシタ410、420、430、440を作製した。符号410~440は試料番号である。図示しないが、いずれのキャパシタも、図1に示した第1実施形態にかかるキャパシタ100と同一の構造からなる。
第5実施形態にかかるキャパシタ500を作製した。符号500は試料番号である。図示しないが、キャパシタ500は、図1に示した第1実施形態にかかるキャパシタ100と同一の構造からなる。
2・・・第1電極層
3・・・誘電体層
4・・・第2電極層
Claims (9)
- 第1電極層と、
前記第1電極層上に形成された誘電体層と、
前記誘電体層上に形成された第2電極層と、を備えたキャパシタであって、
前記誘電体層が、金属酸化物からなり、
前記金属酸化物は、Hf、Bi、および、5価以上の元素を含み、
前記金属酸化物は、蛍石構造を有し、
Oを除いた前記金属酸化物の総量を100mol%としたとき、前記Bi、および、前記5価以上の元素の添加量が、それぞれ、5mol%以上、10mol%以下である、キャパシタ。 - 前記5価以上の元素が、Nb、Ta、Mo、Wの中から選ばれた、1種類または複数種類の元素である、請求項1に記載されたキャパシタ。
- 前記5価以上の元素が5価の元素である場合は、前記Biと当該5価の元素とのmol比が、1:1であり、
前記5価以上の元素が6価の元素である場合は、前記Biと当該6価の元素とのmol比が、2:1である、請求項1または2に記載されたキャパシタ。 - 更に、前記金属酸化物にIV族の元素が添加された、請求項1ないし3のいずれか1項に記載されたキャパシタ。
- 前記IV族の元素が、Si、Geの一方または両方の元素である、請求項4に記載されたキャパシタ。
- Oを除いた前記金属酸化物の総量を100mol%としたとき、
前記IV族の元素の添加量が3mol%以下である、請求項4または5に記載されたキャパシタ。 - 前記IV族の元素の添加量が2mol%以下である、請求項6に記載されたキャパシタ。
- 前記誘電体層の膜厚が10nm以上であり、
更に、安定化剤が添加された、請求項1ないし7のいずれか1項に記載されたキャパシタ。 - 前記安定化剤が、La、Ce、Al、Ti、Sn、Zr、Sc、Mg、Zn、Y、Ca、Sr、Baの中から選ばれた、1種類または複数種類の元素である、請求項8に記載されたキャパシタ。
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PCT/JP2019/016378 WO2019208340A1 (ja) | 2018-04-26 | 2019-04-16 | キャパシタおよびHfO2膜の製造方法 |
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JP2009107925A (ja) | 2001-06-13 | 2009-05-21 | Seiko Epson Corp | セラミックス、ならびに誘電体キャパシタ、アクチュエータ、光変調器、及び超音波センサ |
JP2016029708A (ja) | 2014-07-23 | 2016-03-03 | Tdk株式会社 | 薄膜誘電体及び薄膜コンデンサ素子 |
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US20130273261A1 (en) * | 2011-09-30 | 2013-10-17 | Donald S. Gardner | Method of increasing an energy density and an achievable power output of an energy storage device |
EP2924402A4 (en) * | 2012-11-26 | 2016-01-06 | Panasonic Ip Man Co Ltd | INFRARED DETECTION DEVICE |
JP6402017B2 (ja) * | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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JP2009107925A (ja) | 2001-06-13 | 2009-05-21 | Seiko Epson Corp | セラミックス、ならびに誘電体キャパシタ、アクチュエータ、光変調器、及び超音波センサ |
JP2016029708A (ja) | 2014-07-23 | 2016-03-03 | Tdk株式会社 | 薄膜誘電体及び薄膜コンデンサ素子 |
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