JP6985286B2 - 発光素子およびこれを備えた発光モジュール - Google Patents
発光素子およびこれを備えた発光モジュール Download PDFInfo
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- JP6985286B2 JP6985286B2 JP2018549891A JP2018549891A JP6985286B2 JP 6985286 B2 JP6985286 B2 JP 6985286B2 JP 2018549891 A JP2018549891 A JP 2018549891A JP 2018549891 A JP2018549891 A JP 2018549891A JP 6985286 B2 JP6985286 B2 JP 6985286B2
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- 239000012788 optical film Substances 0.000 claims description 39
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
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- 239000004065 semiconductor Substances 0.000 description 102
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 19
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
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- 150000004767 nitrides Chemical class 0.000 description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 9
- -1 InGaN / InGaN Inorganic materials 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000011135 tin Substances 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
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- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
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- 229910052733 gallium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 241000408495 Iton Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 241000700605 Viruses Species 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical group FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
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- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
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- 229910052749 magnesium Inorganic materials 0.000 description 2
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- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229960001296 zinc oxide Drugs 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 239000006185 dispersion Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920009441 perflouroethylene propylene Polymers 0.000 description 1
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
<第1実施例>
<第2実施例>
<発光モジュール>
Claims (4)
- 上部が開放されたリセスを有する胴体;
前記リセスに配置された複数の電極;および
前記リセスに配置され、前記複数の電極と電気的に連結された発光ダイオードを含み、
前記リセスは、底部と傾斜した複数の側面を有し、
前記発光ダイオードは、前記リセスの底部の中心部の上に配置され、
前記リセスの複数の側面のそれぞれは、発光ダイオードの光軸に対して第1角度に傾斜し、
前記発光ダイオードと前記リセスの側面の下端との間の最小距離の値と前記第1角度に対するタンジェント値の積が0.21ないし0.42の範囲を有し、
前記リセスの傾斜した複数の側面のそれぞれは、前記発光ダイオードの側面と対面し、
前記胴体は、セラミック材質を含み、
前記胴体は、前記リセスの上部周りに前記胴体の上部より低い段差構造を有し、
前記発光ダイオードは、紫外線波長の光を発光し、
前記リセス上に配置された光学フィルムを含み、
前記光学フィルムの周りは、前記段差構造に配置され、
前記発光ダイオードは、前記複数の電極のうちの少なくとも一つの上に配置され、
前記リセスの複数の側面のそれぞれは、上部周りに正反射面を有する第1領域と、下部周りに前記リセスの底部と隣接した乱反射面を有する第2領域を含み、
前記第1領域は、前記発光ダイオードの上面高さ以上の位置に配置され、
前記第2領域は、前記発光ダイオードの側面と対面するように配置され、
前記発光ダイオードの各側面は、前記リセスの全ての側面と同じ間隔で配置され、
前記光学フィルムの下の空間は、空いた空間を有し、
前記胴体は、AlNであり、
前記第1領域は、銀金属が配置され、
前記第2領域は、前記胴体のセラミック材質が露出し、
前記リセスの深さと前記第1領域の高さの比率は、1:0.7ないし1:0.8の範囲を有し、
前記リセスは、トップビュー形状が多角形形状であり、
前記発光ダイオードと前記リセスの側面の間の最小距離は、0.3mmないし1mmの範囲を有し、
前記リセスの深さは、前記段差構造の深さを除いた深さであり、2mm±0.3mmまたは1.2mm±0.2mmの範囲であり、
前記第1角度は、20度ないし40度の範囲を有し、
前記第1領域の下端地点は、前記発光ダイオードの上面高さと同一またはより高い高さに位置し、
前記紫外線波長の光度は、中心光度が前記中心光度の周辺の±15度または±30度の光度より高く、
前記光学フィルムを経た前記紫外線波長の光度は、中心光度と前記中心光度の周辺の±15度または±30度の光度の比率が1以上であり、
前記紫外線波長の光を発光する前記発光ダイオードは、角領域やエッジ領域を除いたセンター領域から30%以下の光を放出する、発光素子。 - 前記光学フィルムの外側周りを前記段差構造に接着させる接着物質を含み、
前記発光ダイオードは、280nm以下の波長を発光し、
前記第1領域の高さは、前記第2領域の高さより高く、
前記第1領域の面積は、前記第2領域の面積より大きい、
請求項1に記載の発光素子。 - 前記発光ダイオードから放出された光の中で前記第1領域の下端地点によって反射した光の第1出射角と前記第1領域の上端地点によって反射した光の第2出射角との差の絶対値は、17度ないし24度の範囲を有し、
前記第1出射角と前記第2出射角のうちいずれか一つは、20度以上である、
請求項2に記載の発光素子。 - 前記胴体の下面に複数のパッドおよび前記胴体の内部に複数のビア電極を含み、
前記パッドおよび前記ビア電極は、前記発光ダイオードと電気的に連結され、
前記胴体の厚さは1mmないし2mmの範囲であり、
前記リセスの深さは、前記発光ダイオードと前記光学フィルムの厚さの和より大きく配置され、
前記リセスは、前記段差構造より内側に配置される、
請求項1ないし請求項3のうちいずれか一項に記載の発光素子。
Applications Claiming Priority (5)
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KR1020160033927A KR102566046B1 (ko) | 2016-03-22 | 2016-03-22 | 발광 소자 및 이를 구비한 발광 모듈 |
KR10-2016-0033931 | 2016-03-22 | ||
KR10-2016-0033927 | 2016-03-22 | ||
KR1020160033931A KR102628791B1 (ko) | 2016-03-22 | 2016-03-22 | 발광 소자 및 이를 구비한 발광 모듈 |
PCT/KR2017/003080 WO2017164644A1 (ko) | 2016-03-22 | 2017-03-22 | 발광 소자 및 이를 구비한 발광 모듈 |
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JP2019511126A JP2019511126A (ja) | 2019-04-18 |
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US (1) | US10818822B2 (ja) |
JP (1) | JP6985286B2 (ja) |
CN (1) | CN108886079B (ja) |
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KR102560908B1 (ko) * | 2018-07-20 | 2023-07-31 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 및 광원 모듈 |
JP7152666B2 (ja) * | 2019-03-08 | 2022-10-13 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US11551963B2 (en) * | 2020-02-14 | 2023-01-10 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10308536A (ja) * | 1997-05-06 | 1998-11-17 | Mitsubishi Cable Ind Ltd | Ledライン光源 |
JP4944301B2 (ja) * | 2000-02-01 | 2012-05-30 | パナソニック株式会社 | 光電子装置およびその製造方法 |
JP2002299698A (ja) * | 2001-03-30 | 2002-10-11 | Sumitomo Electric Ind Ltd | 発光装置 |
KR100714602B1 (ko) | 2005-09-29 | 2007-05-07 | 삼성전기주식회사 | 발광다이오드 패키지 |
JP2007234779A (ja) * | 2006-02-28 | 2007-09-13 | Toshiba Lighting & Technology Corp | 発光装置 |
TWI331815B (en) * | 2006-03-17 | 2010-10-11 | Seoul Semiconductor Co Ltd | Side-view light emitting diode package having a reflector |
KR101523482B1 (ko) * | 2006-08-22 | 2015-05-28 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 디바이스용 부재, 그리고 반도체 디바이스용 부재 형성액 및 반도체 디바이스용 부재의 제조 방법, 그리고 그것을 이용한 반도체 디바이스용 부재 형성액, 형광체 조성물, 반도체 발광 디바이스, 조명 장치, 및 화상 표시 장치 |
KR100757826B1 (ko) * | 2006-09-29 | 2007-09-11 | 서울반도체 주식회사 | 측면 발광 다이오드 패키지 |
KR101488448B1 (ko) * | 2007-12-06 | 2015-02-02 | 서울반도체 주식회사 | Led 패키지 및 그 제조방법 |
JP2009176798A (ja) * | 2008-01-22 | 2009-08-06 | Citizen Electronics Co Ltd | 発光装置 |
KR100849829B1 (ko) | 2008-03-18 | 2008-07-31 | 삼성전기주식회사 | 넓은 지향각을 갖는 발광다이오드 패키지 |
JP5180690B2 (ja) * | 2008-06-06 | 2013-04-10 | アピックヤマダ株式会社 | Ledチップ実装用基板の製造方法、ledチップ実装用基板のモールド金型、ledチップ実装用基板、及び、led |
TW201138029A (en) * | 2010-03-26 | 2011-11-01 | Kyocera Corp | Light-reflecting substrate, substrate which can be mounted in light-emitting element, light-emitting device, and process for production of substrate which can be mounted in light-emitting element |
JP2011253970A (ja) * | 2010-06-03 | 2011-12-15 | Panasonic Corp | 光半導体装置用パッケージおよびその製造方法 |
KR20120047666A (ko) | 2010-11-04 | 2012-05-14 | 엘지이노텍 주식회사 | 노광 장치 |
KR101693642B1 (ko) | 2010-12-21 | 2017-01-17 | 삼성전자 주식회사 | 발광소자 패키지 제조방법 |
KR20120122735A (ko) | 2011-04-29 | 2012-11-07 | 엘지이노텍 주식회사 | 자외선 발광 다이오드를 이용한 발광소자 패키지 |
JP5968674B2 (ja) * | 2011-05-13 | 2016-08-10 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及びこれを備える紫外線ランプ |
KR101933022B1 (ko) | 2011-05-13 | 2018-12-27 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 자외선 램프 |
CN103688377B (zh) * | 2011-05-16 | 2018-06-08 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
KR101852389B1 (ko) * | 2011-10-25 | 2018-04-26 | 엘지이노텍 주식회사 | 디스플레이 장치 |
JP5952569B2 (ja) | 2012-01-25 | 2016-07-13 | 日本カーバイド工業株式会社 | 発光素子搭載用基板、及び、それを用いた発光装置、及び、発光素子搭載用基板の製造方法 |
KR101430178B1 (ko) | 2013-08-14 | 2014-08-13 | (주)네오빛 | 사이드뷰 led 패키지 |
KR101469237B1 (ko) * | 2013-08-21 | 2014-12-09 | 주식회사 레다즈 | 발광다이오드 패키지 |
KR20150037216A (ko) | 2013-09-30 | 2015-04-08 | 서울바이오시스 주식회사 | 발광 디바이스 |
US10825970B2 (en) * | 2016-02-26 | 2020-11-03 | Epistar Corporation | Light-emitting device with wavelength conversion structure |
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- 2017-03-22 US US16/087,243 patent/US10818822B2/en active Active
- 2017-03-22 CN CN201780019975.0A patent/CN108886079B/zh active Active
- 2017-03-22 WO PCT/KR2017/003080 patent/WO2017164644A1/ko active Application Filing
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CN108886079B (zh) | 2022-07-19 |
JP2019511126A (ja) | 2019-04-18 |
US10818822B2 (en) | 2020-10-27 |
WO2017164644A1 (ko) | 2017-09-28 |
CN108886079A (zh) | 2018-11-23 |
US20190103517A1 (en) | 2019-04-04 |
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