JP6977465B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6977465B2 JP6977465B2 JP2017196330A JP2017196330A JP6977465B2 JP 6977465 B2 JP6977465 B2 JP 6977465B2 JP 2017196330 A JP2017196330 A JP 2017196330A JP 2017196330 A JP2017196330 A JP 2017196330A JP 6977465 B2 JP6977465 B2 JP 6977465B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- molybdenum
- schottky electrode
- electrode
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 75
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 66
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 64
- 229910052750 molybdenum Inorganic materials 0.000 claims description 61
- 239000011733 molybdenum Substances 0.000 claims description 55
- 239000007769 metal material Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 74
- 230000004888 barrier function Effects 0.000 description 34
- 229910052760 oxygen Inorganic materials 0.000 description 33
- 239000001301 oxygen Substances 0.000 description 33
- 239000007789 gas Substances 0.000 description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 30
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 17
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000011265 semifinished product Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- -1 molybdenum trioxide) Chemical compound 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施例では、ショットキー電極34は、所定の濃度で酸素原子を含有するモリブデンで構成される。これにより、モリブデンが酸素原子を含有していない場合と比較して、ショットキー電極34と半導体基板12との間のショットキー障壁高さを高くすることができる。また、ショットキー電極34を構成する酸素含有モリブデンは、酸素原子を含有するものの、その濃度は比較的に低く、酸化モリブデンとは異なることから、その導電性を十分に維持している。これにより、ショットキー電極34を単層構造でも形成することができるので、製造工程が複雑となることを避けることができる。従って、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。
本実施例によっても、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。また、本実施例では、ターゲットを構成する混合物中のモリブデン粉体と三酸化モリブデン(MoO3)粉体の混合比率を変化させることで、ショットキー電極34(本実施例では酸素含有モリブデン)が含有する酸素原子の濃度を調整することができる。
本実施例によっても、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。また、本実施例では、酸化モリブデン層の数や厚さを変化させることで、ショットキー電極34(本実施例では酸素含有モリブデン)が含有する酸素原子の濃度を調整することができる。
本実施例によっても、半導体基板12との高いショットキー障壁高さを有するショットキー電極34をより容易に形成することができる。また、本実施例では、半導体基板12の表面を酸化させる程度を変化させることで、ショットキー電極34(即ち、酸素含有モリブデン)が含有する酸素原子の所定の濃度に調節することができる。
Claims (3)
- 半導体装置の製造方法であって、
半導体基板を用意する工程と、
前記半導体基板の表面とショットキー接触するショットキー電極を形成する工程と、を備え、
前記ショットキー電極は、所定の濃度で酸素原子を含有する金属材料で構成され、
前記半導体基板は炭化シリコン基板であり、前記金属材料はモリブデンであり、
前記所定の濃度は、1.0E19〜1.0E22cm −3 の範囲内の値である、
製造方法。 - 半導体装置の製造方法であって、
半導体基板を用意する工程と、
前記半導体基板の表面とショットキー接触するショットキー電極を形成する工程と、を備え、
前記ショットキー電極は、所定の濃度で酸素原子を含有する金属材料で構成され、
前記ショットキー電極を形成する工程は、
前記半導体基板の前記表面に、前記金属材料の層と前記金属材料の酸化物の層とを交互に積層した積層構造を形成する工程と、
前記積層構造が形成された前記半導体基板をアニール処理して、前記金属材料の酸化物の前記層から前記金属材料の前記層へ酸素原子を拡散させる工程と、
を有する、製造方法。 - 半導体装置の製造方法であって、
半導体基板を用意する工程と、
前記半導体基板の表面とショットキー接触するショットキー電極を形成する工程と、を備え、
前記ショットキー電極は、所定の濃度で酸素原子を含有する金属材料で構成され、
前記ショットキー電極を形成する工程は、
前記半導体基板の前記表面を酸化させる工程と、
前記半導体基板の酸化させた前記表面上に、前記金属材料の被膜を形成する工程と、
前記被膜が形成された前記半導体基板をアニール処理して、前記半導体基板から前記被膜へ酸素原子を拡散させる工程と、
を有する、製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017196330A JP6977465B2 (ja) | 2017-10-06 | 2017-10-06 | 半導体装置の製造方法 |
CN201811061849.4A CN109638072B (zh) | 2017-10-06 | 2018-09-12 | 制造半导体装置的方法和半导体装置 |
US16/131,957 US10720329B2 (en) | 2017-10-06 | 2018-09-14 | Method of manufacturing semiconductor apparatus and semiconductor apparatus |
DE102018122555.5A DE102018122555A1 (de) | 2017-10-06 | 2018-09-14 | Verfahren zur herstellung einer halbleitervorrichtung und halbleitervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017196330A JP6977465B2 (ja) | 2017-10-06 | 2017-10-06 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019071340A JP2019071340A (ja) | 2019-05-09 |
JP6977465B2 true JP6977465B2 (ja) | 2021-12-08 |
Family
ID=65816969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017196330A Active JP6977465B2 (ja) | 2017-10-06 | 2017-10-06 | 半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10720329B2 (ja) |
JP (1) | JP6977465B2 (ja) |
CN (1) | CN109638072B (ja) |
DE (1) | DE102018122555A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7258668B2 (ja) | 2019-06-13 | 2023-04-17 | 三菱電機株式会社 | 半導体装置、及び、半導体装置の製造方法 |
JP7259609B2 (ja) * | 2019-07-17 | 2023-04-18 | 株式会社デンソー | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4978024B2 (ja) * | 2006-02-22 | 2012-07-18 | 三菱電機株式会社 | SiC半導体装置の製造方法 |
JP5183913B2 (ja) * | 2006-11-24 | 2013-04-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
JP5453867B2 (ja) * | 2009-03-24 | 2014-03-26 | 株式会社デンソー | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 |
JP5564884B2 (ja) * | 2009-10-08 | 2014-08-06 | 住友電気工業株式会社 | ショットキーバリアダイオード |
WO2013183677A1 (ja) * | 2012-06-06 | 2013-12-12 | ローム株式会社 | 半導体装置およびその製造方法 |
CN102938421B (zh) * | 2012-11-14 | 2015-10-07 | 东南大学 | 一种梯形终端的碳化硅结势垒肖特基二极管器件 |
JP2014194469A (ja) * | 2013-03-28 | 2014-10-09 | Fujifilm Corp | 太陽光集光用フィルムミラー及びその製造方法、並びに太陽光反射板 |
CN105453272B (zh) * | 2013-08-19 | 2020-08-21 | 出光兴产株式会社 | 氧化物半导体基板及肖特基势垒二极管元件 |
CN104392918A (zh) * | 2014-12-10 | 2015-03-04 | 中国电子科技集团公司第四十七研究所 | 肖特基势垒制作方法及肖特基势垒 |
JP6477106B2 (ja) * | 2015-03-24 | 2019-03-06 | サンケン電気株式会社 | 半導体装置 |
CN107068773B (zh) * | 2015-12-18 | 2021-06-01 | 株式会社Flosfia | 半导体装置 |
JP2017118048A (ja) * | 2015-12-25 | 2017-06-29 | 出光興産株式会社 | 積層体 |
CN110890280B (zh) * | 2019-11-27 | 2024-02-06 | 山东大学 | 一种利用钯/钯氧化物双层肖特基电极制备氧化物半导体肖特基二极管的方法 |
-
2017
- 2017-10-06 JP JP2017196330A patent/JP6977465B2/ja active Active
-
2018
- 2018-09-12 CN CN201811061849.4A patent/CN109638072B/zh active Active
- 2018-09-14 US US16/131,957 patent/US10720329B2/en active Active
- 2018-09-14 DE DE102018122555.5A patent/DE102018122555A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2019071340A (ja) | 2019-05-09 |
CN109638072B (zh) | 2022-05-06 |
US10720329B2 (en) | 2020-07-21 |
US20190109005A1 (en) | 2019-04-11 |
CN109638072A (zh) | 2019-04-16 |
DE102018122555A1 (de) | 2019-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102290441B (zh) | 半导体器件及其制造方法 | |
JP4221012B2 (ja) | 半導体装置とその製造方法 | |
JP2011044688A (ja) | 半導体装置および半導体装置の製造方法 | |
US9397206B2 (en) | Semiconductor device and method for manufacturing the same | |
CN108364861B (zh) | 制造半导体装置的方法 | |
JP2010225877A (ja) | ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 | |
JP6977465B2 (ja) | 半導体装置の製造方法 | |
JP2006303469A (ja) | SiC半導体装置 | |
JP6457363B2 (ja) | 半導体装置 | |
US20090050899A1 (en) | High-output diamond semiconductor element | |
JP2011181840A (ja) | パワー素子を備えた半導体装置の製造方法 | |
JPWO2014010405A1 (ja) | トランジスタの製造方法 | |
CN108206213A (zh) | 晶闸管和用于制造晶闸管的方法 | |
JP4091931B2 (ja) | SiC半導体装置およびSiC半導体装置の製造方法 | |
JP5960491B2 (ja) | 半導体装置およびその製造方法 | |
JP2015216200A (ja) | 半導体装置 | |
WO2022215471A1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP6549972B2 (ja) | 半導体装置およびその製造方法 | |
JP4087368B2 (ja) | SiC半導体装置の製造方法 | |
JP6052065B2 (ja) | 半導体素装置および半導体装置の製造方法 | |
JP2018056348A (ja) | 半導体装置 | |
JP5874582B2 (ja) | 縦型半導体装置およびその製造方法 | |
JP2016171162A (ja) | 半導体装置 | |
JP2015170824A (ja) | 半導体装置及びその製造方法 | |
KR20210053905A (ko) | 반도체 장치의 제조 방법 및 에칭 가스 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20200401 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200929 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210824 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210826 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210928 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211012 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211025 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6977465 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |