JP6976984B2 - 電子部品に接続するための基板アセンブリ - Google Patents
電子部品に接続するための基板アセンブリ Download PDFInfo
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- JP6976984B2 JP6976984B2 JP2019072016A JP2019072016A JP6976984B2 JP 6976984 B2 JP6976984 B2 JP 6976984B2 JP 2019072016 A JP2019072016 A JP 2019072016A JP 2019072016 A JP2019072016 A JP 2019072016A JP 6976984 B2 JP6976984 B2 JP 6976984B2
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Description
3 基板−従来技術
5 電子部品
7 予備固定剤−従来技術
10、10’ 基板アセンブリ
30、30’ 基板
50、50’ 電子部品
70、70’ 予備固定剤
90、90’ 接触材料層
110、110’ 通路開口部
A 部分
Claims (15)
- 電子部品(50、50’)との接続のための基板アセンブリであって、
第1の面および前記第1の面に向き合う第2の面を有する少なくとも1つの基板(30、30’)、
少なくとも部分的に前記基板(30、30’)の前記第1の面上に配置された少なくとも1つの接触材料層(90、90’)、
少なくとも部分的に前記接触材料層(90、90’)の前記基板(30、30’)とは反対側上に、および/または少なくとも部分的に前記基板(30、30’)の前記第1の面上に配置された少なくとも1つの予備固定剤(70、70’)、
を備え、
前記基板(30、30’)が前記第1の面から前記向き合う第2の面への第1開口部および第2開口部を有する少なくとも1つの通路開口部(110、110’)を備え、
前記予備固定剤は、予備固定剤組成物であり、前置予備固定剤組成物は、
(i)30〜180℃の範囲で溶融する有機化合物、
(ii)30〜180℃の範囲で溶融する有機物質の混合物、および
(iii)有機ポリマー
からなる群から選択された少なくとも1つの30〜180℃の範囲で溶融する材料Mを3〜100重量%を含むことを特徴とする、基板アセンブリ。 - 前記基板(30、30’)が前記第1の面から前記向き合う第2の面への多数の通路開口部(110、110’)を備えることを特徴とする請求項1に記載の基板アセンブリ。
- 単数の前記通路開口部(110、110’)のまたは複数の前記通路開口部(110、110’)の前記第1開口部が前記基板(30、30’)の前記第1の面で少なくとも領域ごとに前記予備固定剤(70、70’)に配置され、および/または前記予備固定剤(70、70’)と結合し、および/または少なくとも領域ごとに前記予備固定剤(70、70’)にも前記接触材料層(90、90’)にも覆われていない前記基板(30、30’)の前記第1の面の領域に少なくとも領域ごとに配置されることを特徴とする請求項1または2に記載の基板アセンブリ。
- 前記通路開口部(110、110’)の形状が前記第1開口部から前記第2開口部への延在に亘って略一定に形成されるか、または前記通路開口部(110、110’)の形状が前記第1開口部から前記第2開口部への延在に亘って縮小して形成されることを特徴とする請求項1〜3の何れか一項に記載の基板アセンブリ。
- 前記通路開口部(110、110’)が略長方形に形成され10〜100μmの幅を有し、および/または前記通路開口部(110、110’)の容積が前記予備固定剤(70、70’)の容積の少なくとも5%であることを特徴とする請求項1〜4の何れか一項に記載の基板アセンブリ。
- 前記接触材料層(90、90’)が金属粒子を含み、前記予備固定剤(70、70’)が少なくとも1つの有機成分を含むことを特徴とする請求項1〜5の何れか一項に記載の基板アセンブリ。
- 前記接触材料層(90、90’)が前記基板(30、30’)の前記第1の面の面上に配置され、接触材料のない領域を接触材料層がない前記基板(30、30’)の前記第1の面上に形成し、前記予備固定剤(70、70’)が少なくとも部分的に接触材料のない領域に配置されることを特徴とする請求項1〜6の何れか一項に記載の基板アセンブリ。
- 前記基板(30、30’)が金属板または金属帯部分またはリードフレームまたはDCB基板またはPCB基板を含み、および/または前記基板(30、30’)が前記第1および/または前記第2の面上に金(Au)、ニッケル−金(NiAu)、銀(Ag)、ニッケル−銀(NiAg)および/またはニッケル−パラジウム−金(NiPdAu)の材料で被膜されまたは化学蒸着されることを特徴とする請求項1〜7の何れか一項に記載の基板アセンブリ。
- 電子部品(50、50’)との接続のための基板アセンブリの製造のための方法であって、
第1の面および前記第1の面に向き合う第2の面を有する少なくとも1つの基板(30、30’)を提供するステップであって、前記基板(30、30’)は前記第1の面から前記向き合う第2の面への第1開口部および第2開口部を有する少なくとも1つの通路開口部(110、110’)を備える、提供するステップと、
少なくとも1つの接触材料層(90、90’)を少なくとも部分的に前記基板(30、30’)の前記第1の面上に塗布するステップと、
少なくとも1つの予備固定剤(70、70’)を少なくとも部分的に前記接触材料層(90、90’)の前記基板(30、30’)とは反対側に塗布し、および/または前記予備固定剤(70、70’)を少なくとも部分的に前記基板(30、30’)の前記第1の面上に塗布するステップと
を含み、
前記予備固定剤は、予備固定剤組成物であり、前置予備固定剤組成物は、
(i)30〜180℃の範囲で溶融する有機化合物、
(ii)30〜180℃の範囲で溶融する有機物質の混合物、および
(iii)有機ポリマー
からなる群から選択された少なくとも1つの30〜180℃の範囲で溶融する材料Mを3〜100重量%を含む、方法。 - 前記基板(30、30’)の提供が、少なくとも1つの通路開口部(110、110’)を前記基板(30、30’)の前記第1の面から前記基板(30、30’)の前記向き合う第2の面に設けることを含むことを特徴とする請求項9に記載の方法。
- 単数の前記通路開口部または複数の前記通路開口部(110、110’)の前記第1開口部が前記基板(30、30’)の前記第1の面で少なくとも領域ごとに前記予備固定剤(70、70’)に配置され、および/または前記予備固定剤(70、70’)と結合し、および/または少なくとも領域ごとに前記予備固定剤(70、70’)にも前記接触材料層(90、90’)にも覆われていない前記基板(30、30’)の前記第1の面の領域に少なくとも領域ごとに配置されることを特徴とする請求項9または10に記載の方法。
- 前記通路開口部(110、110’)の形状が前記第1開口部から前記第2開口部への延在に亘って略一定に形成されるか、または前記通路開口部(110、110’)の形状が前記第1開口部から前記第2開口部への延在に亘って縮小して形成されることを特徴とする請求項9〜11の何れか一項に記載の方法。
- 前記通路開口部(110、110’)が略長方形に形成され、10〜100μmの幅を有し、および/または前記通路開口部(110、110’)の容積が前記予備固定剤(70、70’)の容積の少なくとも5%であることを特徴とする請求項9〜12の何れか一項に記載の方法。
- 少なくとも1つの電子部品(50、50’)と請求項1〜8の何れか一項に記載の基板アセンブリおよび/または請求項9〜13の何れか一項に記載の方法によって製造された基板アセンブリとの接続のための方法であって、
前記基板アセンブリを前記電子部品(50、50’)上に前記第1の面を前記電子部品(50、50’)の方向に向けて位置付けるステップと、
前記基板アセンブリを前記電子部品(50、50’)上に前記基板(30、30’)の前記第1の面上の前記予備固定剤(70、70’)によってあらかじめ固定するステップと、
前記基板アセンブリを前記少なくとも1つの電子部品(50、50’)と接続するステップと
を含む、方法。 - 前記基板アセンブリの前記電子部品(50、50’)との焼結、押圧、はんだ付けおよび/または接着を含み、接続中に前記予備固定剤(70、70’)の部分または残りが前記基板(30、30’)の前記通路開口部(110、110’)中に受容され、および/または前記通路開口部(110、110’)から前記基板(30、30’)の前記第2の面上に通り抜けることを特徴とする請求項14に記載の方法。
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