JP6973076B2 - 導電性基板 - Google Patents
導電性基板 Download PDFInfo
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- JP6973076B2 JP6973076B2 JP2017532519A JP2017532519A JP6973076B2 JP 6973076 B2 JP6973076 B2 JP 6973076B2 JP 2017532519 A JP2017532519 A JP 2017532519A JP 2017532519 A JP2017532519 A JP 2017532519A JP 6973076 B2 JP6973076 B2 JP 6973076B2
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- 239000000758 substrate Substances 0.000 title claims description 137
- 239000010410 layer Substances 0.000 claims description 631
- 229910052751 metal Inorganic materials 0.000 claims description 320
- 239000002184 metal Substances 0.000 claims description 320
- 239000000463 material Substances 0.000 claims description 128
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 98
- 239000012044 organic layer Substances 0.000 claims description 78
- 239000000126 substance Substances 0.000 claims description 63
- 229910052757 nitrogen Inorganic materials 0.000 claims description 48
- 239000011368 organic material Substances 0.000 claims description 39
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
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- 229910018054 Ni-Cu Inorganic materials 0.000 description 7
- 229910018481 Ni—Cu Inorganic materials 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
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- 229910052748 manganese Inorganic materials 0.000 description 7
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- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
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- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 2
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- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
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- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 229940081735 acetylcellulose Drugs 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
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- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- C—CHEMISTRY; METALLURGY
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Description
絶縁性基材と、
前記絶縁性基材の少なくとも一方の面上に形成された金属層と、
前記金属層上に形成された、窒素系有機物を含有する有機物層と、
前記有機物層上に形成された黒化層と、を有しており、
前記金属層は、前記有機物層を形成する面に、複数の粒状の突起物を有しており、
前記複数の粒状の突起物の平均高さが8.00nm以上15.0nm以下であり、
前記金属層は、前記有機物層を形成する面に、前記複数の粒状の突起物を70個/10μm以上83個/10μm以下有する導電性基板を提供する。
(導電性基板)
本実施形態の導電性基板は、絶縁性基材と、絶縁性基材の少なくとも一方の面上に形成された金属層と、金属層上に形成された、窒素系有機物を含有する有機物層と、有機物層上に形成された黒化層と、を有することができる。
そして、金属層は、有機物層を形成する面に、複数の粒状の突起物を有することができる。複数の粒状の突起物の平均高さは8.00nm以上とすることができる。また、金属層は、有機物層を形成する面に、複数の粒状の突起物を70個/10μm以上有することができる。
上記式で算出されるSAD値は、金属層の有機物層を形成する面の表面積、すなわち金属層の有機物層を形成する面の実測面積S2と、投影面積S1との差を、投影面積S1で除した値となっている。従って、複数の粒状の突起物の大きさ、及び複数の粒状の突起物の単位面積当たりの個数が増加するのに応じてSAD値は大きくなる。そして、本発明の発明者らの検討によると、SAD値が5%以上の場合には金属層の有機物層を形成する面に形成された複数の粒状の突起物の大きさ、及び単位面積当たりの個数が、黒化層の密着性を高めるために十分な大きさになっており好ましい。
(導電性基板の製造方法)
次に本実施形態の導電性基板の製造方法の一構成例について説明する。
絶縁性基材の少なくとも一方の面上に金属層を形成する金属層形成工程。
金属層上に窒素系有機物を含有する有機物層を形成する有機物層形成工程。
有機物層上に黒化層を形成する黒化層形成工程。
(評価方法)
まず、得られた導電性基板の評価方法について説明する。
(1)粒状の突起物の平均高さ、線プロファイルからの粒状の突起物の粒数、金属層表面の表面粗さ、SAD値
以下の実施例、比較例において、絶縁性基材上に、密着層、金属層、及び有機物層を形成後、有機物層表面についてAFM(Bruker AXS社製 商品名:Dimension Icon,nanoScope V)を用いて、有機物層を形成後の金属層表面状態の測定を行った。なお、測定は、有機物層形成直後に、有機物層表面の任意の場所において、長さ10μmの線状に表面のプロファイルを測定し、測定値から、金属層表面の複数の粒状の突起物の平均高さ、線プロファイルからの粒状の突起物の粒数、金属層表面の表面粗さを算出した。また、AFMを用いた測定結果からSAD値についても算出した。
金属層の有機物層を形成する面の投影面積:S1
金属層の有機物層を形成する面の表面積:S2
(2)黒化層の密着性試験
黒化層の密着性試験はASTM D3359に基づいて、具体的には以下の手順に従って実施した。
(試料の作製条件)
実施例、比較例として、以下に説明する条件で導電性基板を作製し、上述の評価方法により評価を行った。
[実施例1]
(密着層形成工程)
縦500mm×横500mm、厚さ50μmのポリエチレンテレフタレート樹脂(PET)製の絶縁性基材の一方の面上に密着層を成膜した。なお、絶縁性基材として用いたポリエチレンテレフタレート樹脂製の絶縁性基材について、全光線透過率をJIS K 7361−1に規定された方法により評価を行ったところ97%であった。
(金属層形成工程)
金属層形成工程では、金属薄膜層形成工程と、金属めっき層形成工程と、を実施した。
(有機物層形成工程)
有機物層形成工程では、絶縁性基材上に、密着層と、金属層とが形成された積層体の金属層上に有機物層を形成した。
(黒化層形成工程)
黒化層形成工程では、有機物層形成工程で形成した有機物層上に、スパッタリング法により黒化層としてNi−Cu層を形成した。
[実施例2、実施例3]
最終のめっき時間を表1に示した時間とした点以外は実施例1と同様にして導電性基板の作製、評価を行った。
[比較例1、2]
最終のめっき時間を表1に示した時間とした点以外は実施例1と同様にして導電性基板の作製、評価を行った。
11 絶縁性基材
12、12A、12B 金属層
13、13A、13B、32A、32B 有機物層
14、14A、14B、33A、33B 黒化層
Claims (4)
- 絶縁性基材と、
前記絶縁性基材の少なくとも一方の面上に形成された金属層と、
前記金属層上に形成された、窒素系有機物を含有する有機物層と、
前記有機物層上に形成された黒化層と、を有しており、
前記金属層は、前記有機物層を形成する面に、複数の粒状の突起物を有しており、
前記複数の粒状の突起物の平均高さが8.00nm以上15.0nm以下であり、
前記金属層は、前記有機物層を形成する面に、前記複数の粒状の突起物を70個/10μm以上83個/10μm以下有する導電性基板。 - 前記金属層の前記有機物層を形成する面の投影面積S1と、前記金属層の前記有機物層を形成する面の表面積S2とから、以下の式(1)により算出されるSAD(Surface Area Different)値が5%以上20%以下である請求項1に記載の導電性基板。
SAD=100×(S2−S1)/S1 ・・・(1) - 前記窒素系有機物が1,2,3−ベンゾトリアゾール、またはその誘導体を含有する請求項1または2に記載の導電性基板。
- 前記絶縁性基材の一方の面上と、前記一方の面と対向する他方の面上とにそれぞれ、
前記金属層と、前記有機物層と、前記黒化層とが、その順に形成された請求項1乃至3のいずれか一項に記載の導電性基板。
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