JP6960868B2 - 半導体モジュールおよびその製造方法 - Google Patents
半導体モジュールおよびその製造方法 Download PDFInfo
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- JP6960868B2 JP6960868B2 JP2018018665A JP2018018665A JP6960868B2 JP 6960868 B2 JP6960868 B2 JP 6960868B2 JP 2018018665 A JP2018018665 A JP 2018018665A JP 2018018665 A JP2018018665 A JP 2018018665A JP 6960868 B2 JP6960868 B2 JP 6960868B2
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- linear body
- metal wire
- semiconductor module
- semiconductor chip
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- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53875—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output
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Description
本実施形態に係る半導体モジュールは、第1の面に第1の領域と第2の領域とを有する第1電極が設けられた第1半導体チップと、第1の面より上方に湾曲する湾曲部を有し、湾曲部の両端が第1の領域と第2の領域とに接続された金属ワイヤーと、湾曲部と第1の面との間に配置された線状体と、を具備している。
金属ワイヤー14の他端側は、(1)第1湾曲部14aを有して第1線状体13aより+X方向側の第1の領域15aに第1ステッチボンディング部18aを介して接続され、(2)第1線状体13aを跨ぐ第2湾曲部14bを有して第1線状体13aと第2線状体13bとの間の第2の領域15bに第2ステッチボンディング部18bを介して接続され、(3)第2線状体13bを跨ぐ第3湾曲部14cを有して第2線状体13bより−X方向側の第3の領域15cに第3ステッチボンディング部18cを介して接続されている。
本実施形態に係る半導体モジュールについて、図8を用いて説明する。図8は本実施形態の半導体モジュールを示す図で、図8(a)はその平面図、図8(b)は図8(a)のA−A線に沿って切断し矢印方向に眺めた断面図である。
本実施形態の変形例1に係る半導体モジュールについて説明する。図9は本変形例の半導体モジュールを示す平面図である。その断面図は、図8(b)に示す断面図と同様のため省略する。
本実施形態の変形例2に係る半導体モジュールについて説明する。図10は本変形例の半導体モジュールを示す平面図、図10(b)はA−A線に沿って切断し矢印方向に眺めた断面図である。
本実施形態に係る半導体モジュールについて、図11を用いて説明する。図11は本実施形態の半導体モジュールを示す断面図である。
図12は本実施形態の変形例に係る半導体モジュールを示す断面図である。変形例の半導体モジュール500では、第1半導体チップと第2半導体チップとの間に線状体が配置されている点で、半導体モジュール400とは異なっている。その他の点については同様である。
本実施形態に係る半導体モジュールについて、図13および図14を用いて説明する。図13は本実施形態の半導体モジュールを示す平面図である。図14は半導体モジュールの回路図である。
図15に示すように、半導体モジュール60は、実施形態1に示す半導体モジュール10を4つ用いて単相フルブリッジ回路を構成したものである。半導体モジュール60は、例えば、入力された直流電圧Vinを、異なる直流電圧Voutに変換するフルブリッジ型DC/DCコンバータに用いられる。
(付記1) 前記線状体は、前記第1電極上に配置されている請求項1記載の半導体モジュール。
(付記2) 前記線状体は、前記第1電極上に設けられた中間部材上に配置されている請求項1記載の半導体モジュール。
(付記3) 前記線状体は、前記湾曲部と前記第1半導体チップの前記第1の面との間、または前記湾曲部と前記第2半導体チップの前記第1の面との間に配置されている請求項3記載の半導体モジュール。
(付記4) 前記線状体は、前記第1半導体チップと前記第2半導体チップとの間に配置されている請求項3記載の半導体モジュール。
11、411 第1半導体チップ
12、412 第2半導体チップ
11a、12a 第1の面
11b、12b 第2の面
13、413 線状体
14、414、514 金属ワイヤー
14a〜14c、414a〜414c、514a〜514c 第1〜第3湾曲部
14d、14e 第1、第2直線部
15、415 第1電極
15a〜15c 第1〜第3の領域
16、416 第2電極
17 ボールボンディング部
18a〜18c 第1〜第3ステッチボンディング部
40 ボンディングツール
41 キャピラリー
42 クランパー
43 超音波接合冶具
44 カッター
51 絶縁性基板
52 パッケージ
53 三相モータ
61 トランス
62 キャパシタ
101、201 中間部材
Claims (3)
- 第1の面に第1の領域と第2の領域とを有する第1電極が設けられた第1半導体チップを用意する工程と、
前記第1の領域と前記第2の領域との間の領域に線状体を配置する工程と、
金属ワイヤーを、前記第1の領域に接合し、前記金属ワイヤーが挿通されたボンディングツールを、前記金属ワイヤーが前記線状体に漸近するように斜め上方に移動させ、前記金属ワイヤーが前記線状体に当接し、更に前記第1電極に当接するまで下降させるにあたって、前記金属ワイヤーが前記第1電極に当接する前に、前記ボンディングツールを前記線状体に近づく方向に移動させ、前記線状体に当接した前記金属ワイヤーを前記線状体から離間させる、ことにより、前記線状体を支えとして前記第1の面より上方に湾曲させ、前記第2の領域に接合する工程と、
を具備する半導体モジュールの製造方法。 - 第1の面に第2電極が設けられた第2半導体チップを、前記第1半導体チップと並置する工程と、
前記金属ワイヤーの一側を前記第2電極に接続し、前記金属ワイヤーの他側を前記第1電極に接続する工程と、
を具備する請求項1記載の半導体モジュールの製造方法。 - 更に前記線状体を除去する工程を有する請求項1または2記載の半導体モジュールの製造方法。
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