JP6951903B2 - 半導体素子のための拡張領域 - Google Patents
半導体素子のための拡張領域 Download PDFInfo
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- JP6951903B2 JP6951903B2 JP2017153919A JP2017153919A JP6951903B2 JP 6951903 B2 JP6951903 B2 JP 6951903B2 JP 2017153919 A JP2017153919 A JP 2017153919A JP 2017153919 A JP2017153919 A JP 2017153919A JP 6951903 B2 JP6951903 B2 JP 6951903B2
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Description
本願は2016年8月10日に出願の米国仮出願番号第62/373,164号に基づく優先権を主張するものであり、その全内容は参照により本明細書に含まれる。
Claims (20)
- チャネル及び該チャネルと結合されたソース・ドレインを有する半導体素子を形成する方法であって、
チャネル領域をエッチングするステップであって、前記チャネル領域の端部が前記チャネル領域を取り囲むゲート構造内に凹部を形成するようにする、エッチングステップと、
前記チャネル領域と接触し、前記凹部を少なくとも部分的に充填する拡張領域を形成するステップであって、前記拡張領域の拡張材料は、前記チャネル領域に歪みが生じるように、前記チャネル領域のチャネル材料とは異なる組成を有する、拡張領域形成ステップと、
前記拡張領域と接触し、前記ゲート構造に隣接するソース・ドレイン領域を形成するソース・ドレイン領域形成ステップと、
を含む、方法。 - 前記チャネル領域はナノワイヤを含み、
前記ゲート構造は、前記ナノワイヤの端部を取り囲むゲートスペーサを含み、
前記エッチングステップは、前記ゲートスペーサ内に凹部を形成するために前記ナノワイヤの端部を選択的にエッチングするステップを含む、
請求項1記載の方法。 - 前記ナノワイヤを前記選択的にエッチングするステップは、前記ゲートスペーサの厚さより少ない深さまで前記ナノワイヤをエッチングするステップを含む、
請求項2記載の方法。 - 前記拡張領域を形成するステップは、ナノワイヤ材料から前記拡張材料をエピタキシャル成長させるステップを含む、
請求項1記載の方法。 - 前記拡張領域を形成するステップは、前記拡張材料をドーピングするステップを含む。
請求項4記載の方法。 - 前記拡張材料をドーピングするステップは、前記拡張材料のエピタキシャル成長の間に、その場ドーピングするステップを含む、
請求項5記載の方法。 - 前記拡張材料をドーピングするステップは、前記ソース・ドレインのコンタクトから前記拡張領域内へドーパントを拡散させるようにアニーリングするステップを含む、
請求項5記載の方法。 - 前記拡張領域形成ステップは、
前記拡張材料が、前記凹部の外側から前記ゲート構造の表面を超える、付加的な拡張材料を含む、前記拡張材料をエピタキシャル成長させるステップと、
拡張ドーピング材料が前記凹部を充填し、前記ゲート構造の表面と実質的に同一平面になるように、前記付加的な拡張材料を除去するステップと、
を含む、請求項4記載の方法。 - 前記拡張領域形成ステップは、前記拡張材料を強化するステップを含む、
請求項1記載の方法。 - 前記ソース・ドレイン領域形成ステップは、前記の強化された拡張ドーピング材料からソース・ドレイン材料をエピタキシャル成長させるステップを含む、
請求項9記載の方法。 - 半導体装置であって、
ゲートスペーサを含むゲート構造と、
前記ゲート構造を介して延在するチャネルであって、前記チャネルの端部が前記ゲート構造内の凹部に凹状形成された、チャネルと、
前記凹部内で前記チャネルの前記端部と接触する拡張領域であって、該拡張領域は、前記チャネルに歪みが生じるように、前記チャネルのチャネル材料と異なる組成を有する拡張材料で形成されている、拡張領域と、
前記拡張領域に接触し、前記ゲート構造に隣接する、ソース・ドレインコンタクトと、
を含む、半導体装置。 - 前記チャネルはナノワイヤを含み、該ナノワイヤの端部には、前記ゲートスペーサの厚さより薄い深さで凹状形成されている、
請求項11記載の半導体装置。 - 前記ゲートスペーサは、30〜100オングストロームの厚さを有する、
請求項12記載の半導体装置。 - 前記ナノワイヤはシリコンを含む、
請求項13記載の半導体装置。 - 前記拡張領域はSiGeを含む、
請求項13記載の半導体装置。 - 前記拡張領域はGeで強化されている、
請求項15記載の半導体装置。 - 前記拡張領域は、20%から70%の範囲のゲルマニウムを含む強化されたSiGeを含む、
請求項16記載の半導体装置。 - ゲートスペーサ内の第1開口部を介して第1接続構造によって、p型ソース・ドレイン領域に結合された横方向のp型ナノワイヤと、
前記p型ナノワイヤに関して垂直に積層されて設けられ、前記ゲートスペーサ内の第2開口部を介する第2接続構造によって、n型ソース・ドレイン領域に結合された、横方向のn型ナノワイヤと、
前記p型ソース・ドレイン領域を備えるp型電極及び前記n型ソース・ドレイン領域を備えるn型電極を含む電極構造であって、前記n型電極は、誘電体によって、前記p型電極から電気的に絶縁されており、前記第1接続構造及び第2接続構造のうちの少なくとも1つの接続構造は、前記ゲートスペーサの各開口内に拡張ドープ領域を含み、前記拡張ドープ領域はチャネル領域に歪みを与える材料で形成されており、前記チャネル領域は前記p型ナノワイヤ及びn型ナノワイヤを含む、電極構造と、
を有する半導体装置。 - 前記第1接続構造は、強化されたSiGeを含む、
請求項18記載の半導体装置。 - 前記強化されたSiGeは20%から70%のゲルマニウムを含む、
請求項19記載の半導体装置。
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