JP6937604B2 - タングステン膜を形成する方法 - Google Patents
タングステン膜を形成する方法 Download PDFInfo
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- JP6937604B2 JP6937604B2 JP2017087176A JP2017087176A JP6937604B2 JP 6937604 B2 JP6937604 B2 JP 6937604B2 JP 2017087176 A JP2017087176 A JP 2017087176A JP 2017087176 A JP2017087176 A JP 2017087176A JP 6937604 B2 JP6937604 B2 JP 6937604B2
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- gas
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- tungsten
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- 239000010937 tungsten Substances 0.000 title claims description 72
- 229910052721 tungsten Inorganic materials 0.000 title claims description 72
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 71
- 239000007789 gas Substances 0.000 claims description 158
- 238000000034 method Methods 0.000 claims description 111
- 239000000758 substrate Substances 0.000 claims description 84
- 239000012159 carrier gas Substances 0.000 claims description 47
- 239000002994 raw material Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052756 noble gas Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 238000010926 purge Methods 0.000 description 16
- 238000002474 experimental method Methods 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 8
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 7
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- H01L21/28562—Selective deposition
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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Description
工程ST11における第1の原料ガスの流量:20sccm〜200sccm
工程ST11におけるキャリアガスの流量:1000sccm〜18000sccm
工程ST11における基板の温度:300℃〜550℃
工程ST11におけるチャンバの圧力:250Pa〜1250Pa
各サイクルにおける工程ST11の処理時間:0.05秒〜5秒
工程ST13における窒化ガスの流量:1000sccm〜9000sccm
工程ST13におけるキャリアガスの流量:1000sccm〜18000sccm
工程ST13における基板の温度:300℃〜550℃
工程ST13におけるチャンバの圧力:100Pa〜1250Pa
各サイクルにおける工程ST13の処理時間:0.05秒〜5秒
工程ST21における第2の原料ガスの流量:50sccm〜450sccm
工程ST21におけるキャリアガスの流量:1000sccm〜9000sccm
工程ST21における基板の温度:300℃〜550℃
工程ST21におけるチャンバの圧力:100Pa〜1250Pa
各サイクルにおける工程ST21の処理時間:0.05秒〜5秒
工程ST23における還元ガスの流量:500sccm〜9000sccm
工程ST23におけるキャリアガスの流量:1000sccm〜9000sccm
工程ST23における基板の温度:300℃〜550℃
工程ST23におけるチャンバの圧力:100Pa〜1250Pa
各サイクルにおける工程ST23の処理時間:0.05秒〜5秒
工程ST11におけるTiCl4ガスの流量:50sccm
工程ST11におけるN2ガスの流量:6000sccm
工程ST11における基板の温度:460℃
工程ST11におけるチャンバの圧力:400Pa
各サイクルにおける工程ST11の処理時間:0.05秒
<工程ST13の条件>
工程ST13におけるNH3ガスの流量:2700sccm
工程ST13におけるN2ガスの流量:6000sccm
工程ST13における基板の温度:460℃
工程ST13におけるチャンバの圧力:400Pa
各サイクルにおける工程ST13の処理時間:0.3秒
<工程ST21の条件>
工程ST21におけるWF6ガスの流量:180sccm
工程ST21におけるアルゴンガスの流量:6000sccm
工程ST21における基板の温度:450℃
工程ST21におけるチャンバの圧力:500Pa
各サイクルにおける工程ST21の処理時間:0.15秒
<工程ST23の条件>
工程ST23におけるH2ガスの流量:4500sccm
工程ST23におけるアルゴンガスの流量:6000sccm
工程ST23における基板の温度:450℃
工程ST23におけるチャンバの圧力:500Pa
各サイクルにおける工程ST23の処理時間:0.3秒
工程ST11におけるTiCl4ガスの流量:50sccm
工程ST11におけるN2ガスの流量:6000sccm
工程ST11における基板の温度:460℃
工程ST11におけるチャンバの圧力:500Pa
各サイクルにおける工程ST11の処理時間:0.05秒
<工程ST13の条件>
工程ST13におけるNH3ガスの流量:2700sccm
工程ST13におけるN2ガスの流量:6000sccm
工程ST13における基板の温度:460℃
工程ST13におけるチャンバの圧力:500Pa
各サイクルにおける工程ST13の処理時間:0.3秒
Claims (9)
- タングステン膜を形成する方法であって、
基板上に金属を含む不連続膜を形成する工程と、
前記不連続膜がその上に形成された前記基板上にタングステン膜を形成する工程と、
を含み、
前記不連続膜は、窒化チタンを含み、前記基板の表面の複数の箇所に形成された前記金属を含む核又はアイランドである、方法。 - 不連続膜を形成する前記工程は、キャリアガス共に、前記金属を含有する第1の原料ガスと窒化ガスとを前記基板に交互に供給することを含む、請求項1に記載の方法。
- 前記第1の原料ガスは、四塩化チタンガスである、請求項2に記載の方法。
- 前記窒化ガスは、アンモニアガスである、請求項2又は3に記載の方法。
- 前記キャリアガスは、窒素ガスである、請求項2〜4の何れか一項に記載の方法。
- タングステン膜を形成する前記工程は、キャリアガス共に、タングステンを含有する第2の原料ガスと還元ガスとを、前記不連続膜がその上に形成された前記基板に交互に供給することを含む、請求項1〜5の何れか一項に記載の方法。
- 前記第2の原料ガスは、六フッ化タングステンガスである、請求項6に記載の方法。
- タングステン膜を形成する前記工程において用いられる前記還元ガスは、水素ガスである、請求項6又は7に記載の方法。
- タングステン膜を形成する前記工程において用いられる前記キャリアガスは、希ガスである、請求項6〜8の何れか一項に記載の方法。
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