JP6937283B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6937283B2 JP6937283B2 JP2018175444A JP2018175444A JP6937283B2 JP 6937283 B2 JP6937283 B2 JP 6937283B2 JP 2018175444 A JP2018175444 A JP 2018175444A JP 2018175444 A JP2018175444 A JP 2018175444A JP 6937283 B2 JP6937283 B2 JP 6937283B2
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
30 銅を含む金属層(第1の金属層)
32 ニッケルを含む金属層(第2の金属層)
34 パラジウムを含む金属層(第4の金属層)
36 金を含む金属層(第3の金属層)
Claims (7)
- 第1の金属層の上に、ニッケルを含む第2の金属層を形成し、
前記第2の金属層に対し1重量%未満の濃度の希釈塩酸で第1の洗浄処理を行い、
前記第2の金属層の上に金を含む第3の金属層を形成する半導体装置の製造方法。 - 前記第1の金属層は銅を含む請求項1記載の半導体装置の製造方法。
- 前記第2の金属層と前記第3の金属層との間に、パラジウム又は白金を含む第4の金属層を形成する請求項1又は請求項2記載の半導体装置の製造方法。
- 前記第4の金属層に対し1重量%未満の希釈塩酸で第2の洗浄処理を行う請求項3記載の半導体装置の製造方法。
- 前記第3の金属層にボンディングワイヤを接続する請求項1ないし請求項4記載の半導体装置の製造方法。
- 前記第1の洗浄処理の時間は20秒以上120秒以下である請求項1ないし請求項5いずれか一項記載の半導体装置の製造方法。
- 前記第1の洗浄処理は0.5重量%以下の濃度の希釈塩酸で行う請求項1ないし請求項6いずれか一項記載の半導体装置の製造方法。
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JP2018175444A JP6937283B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置の製造方法 |
US16/286,334 US10658272B2 (en) | 2018-09-19 | 2019-02-26 | Method for manufacturing semiconductor device |
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JP2018175444A JP6937283B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置の製造方法 |
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JP3410667B2 (ja) | 1997-11-25 | 2003-05-26 | シャープ株式会社 | 反射型液晶表示装置およびその製造方法 |
US6358847B1 (en) * | 1999-03-31 | 2002-03-19 | Lam Research Corporation | Method for enabling conventional wire bonding to copper-based bond pad features |
CN1314225A (zh) * | 2000-02-18 | 2001-09-26 | 德克萨斯仪器股份有限公司 | 铜镀层集成电路焊点的结构和方法 |
EP1139413B1 (en) * | 2000-03-24 | 2005-03-16 | Texas Instruments Incorporated | Wire bonding process |
US6586043B1 (en) * | 2002-01-09 | 2003-07-01 | Micron Technology, Inc. | Methods of electroless deposition of nickel, methods of forming under bump metallurgy, and constructions comprising solder bumps |
JP4260405B2 (ja) * | 2002-02-08 | 2009-04-30 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP2004063672A (ja) * | 2002-07-26 | 2004-02-26 | Oki Electric Ind Co Ltd | 有機絶縁膜の形成方法、及び半導体装置の製造方法 |
US6992389B2 (en) * | 2004-04-28 | 2006-01-31 | International Business Machines Corporation | Barrier for interconnect and method |
US7452749B2 (en) | 2005-03-02 | 2008-11-18 | Nec Electronics Corporation | Method for manufacturing flip-chip type semiconductor device featuring nickel electrode pads, and plating apparatus used in such method |
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US20200091044A1 (en) | 2020-03-19 |
JP2020047794A (ja) | 2020-03-26 |
US10658272B2 (en) | 2020-05-19 |
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