JP6910047B2 - ランダムマイクロニードル - Google Patents
ランダムマイクロニードル Download PDFInfo
- Publication number
- JP6910047B2 JP6910047B2 JP2016199374A JP2016199374A JP6910047B2 JP 6910047 B2 JP6910047 B2 JP 6910047B2 JP 2016199374 A JP2016199374 A JP 2016199374A JP 2016199374 A JP2016199374 A JP 2016199374A JP 6910047 B2 JP6910047 B2 JP 6910047B2
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- Prior art keywords
- random
- single crystal
- substrate
- film
- diamond single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 claims description 82
- 239000010432 diamond Substances 0.000 claims description 67
- 229910003460 diamond Inorganic materials 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 70
- 239000010408 film Substances 0.000 description 35
- 238000001947 vapour-phase growth Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005087 graphitization Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Description
2 ランダムマイクロニードル
3 Ni膜
4 ランダムマイクロパターン
5 Ni
6 厚膜ダイヤ単結晶基板
B 応力
Claims (1)
- 200℃以下のスパッタにより、ダイヤ単結晶上に膜厚0.1〜1.0μmでNi膜を積層し、
次に、Ni膜を加熱して凝集し、配向性を持たない斑状のランダムマイクロパターンを形成し、
次に、ダイヤ単結晶を水素雰囲気下で再度加熱し、Ni膜下のダイヤ単結晶を900℃〜1000℃で熱加工して、ランダムマイクロニードルを形成し、
ランダムマイクロニードル間に於ける隣接した頂点同士の間隔を40μm以下として粗密を有すると共に、高さ30〜500μm以下でランダムマイクロニードルを形成する、ランダムマイクロニードルの製造方法。
Priority Applications (1)
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---|---|---|---|
JP2016199374A JP6910047B2 (ja) | 2016-10-07 | 2016-10-07 | ランダムマイクロニードル |
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---|---|---|---|
JP2016199374A JP6910047B2 (ja) | 2016-10-07 | 2016-10-07 | ランダムマイクロニードル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018058743A JP2018058743A (ja) | 2018-04-12 |
JP6910047B2 true JP6910047B2 (ja) | 2021-07-28 |
Family
ID=61909663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016199374A Active JP6910047B2 (ja) | 2016-10-07 | 2016-10-07 | ランダムマイクロニードル |
Country Status (1)
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JP (1) | JP6910047B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110996863A (zh) | 2017-06-22 | 2020-04-10 | 学校法人久留米大学 | 护齿 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3971090B2 (ja) * | 2000-04-05 | 2007-09-05 | 株式会社神戸製鋼所 | 針状表面を有するダイヤモンドの製造方法及び繊毛状表面を有する炭素系材料の製造方法 |
JP4461218B2 (ja) * | 2005-05-31 | 2010-05-12 | 並木精密宝石株式会社 | 炭素材料の処理方法 |
JP5552654B2 (ja) * | 2008-08-06 | 2014-07-16 | 並木精密宝石株式会社 | 先鋭化針状ダイヤモンド、およびそれを用いた走査プローブ顕微鏡用カンチレバー、フォトマスク修正用プローブ、電子線源 |
CN105579624B (zh) * | 2013-09-30 | 2019-03-26 | 安达满纳米奇精密宝石有限公司 | 金刚石基板及金刚石基板的制造方法 |
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2016
- 2016-10-07 JP JP2016199374A patent/JP6910047B2/ja active Active
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JP2018058743A (ja) | 2018-04-12 |
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