JP6906845B2 - 被加工物の加工方法 - Google Patents
被加工物の加工方法 Download PDFInfo
- Publication number
- JP6906845B2 JP6906845B2 JP2017122264A JP2017122264A JP6906845B2 JP 6906845 B2 JP6906845 B2 JP 6906845B2 JP 2017122264 A JP2017122264 A JP 2017122264A JP 2017122264 A JP2017122264 A JP 2017122264A JP 6906845 B2 JP6906845 B2 JP 6906845B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- wafer
- grinding
- thickness
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims description 10
- 238000003754 machining Methods 0.000 claims description 17
- 239000011148 porous material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 80
- 238000005452 bending Methods 0.000 description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 5
- 230000004075 alteration Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
平均出力 :0.2〜0.5W
繰り返し周波数 :20〜50kHz
パルス幅 :10ps
集光スポット径 :10μm
加工送り速度 :100〜600mm/s
12 集光器
12a 集光レンズ
13 分割予定ライン
15 SAWデバイス
16 研削ユニット
17 保護テープ
19 シールドトンネル
21 細孔
22 研削ホイール
23 非晶質
25 デバイスチップ
26 研削砥石
30 エキスパンド装置
34 保持部材
38 拡張ドラム
Claims (2)
- 交差する複数の分割予定ラインが表面に設定された被加工物の加工方法であって、
被加工物の表面側をチャックテーブルで保持する保持ステップと、
該チャックテーブルに保持された被加工物に対して、透過性を有する波長のパルスレーザビームの集光領域の上端部が、被加工物の表面から被加工物の仕上げ厚みだけ離れた位置よりも該表面から遠い位置と、被加工物の裏面と、の間に位置付けられるように、該パルスレーザビームを被加工物の裏面側から照射して、被加工物の該表面から該仕上げ厚みよりも長く、かつ、被加工物の厚みよりも短い細孔と該細孔を囲繞する非晶質又は変質層とからなるシールドトンネルを複数形成するレーザ加工ステップと、
該レーザ加工ステップを実施した後、該シールドトンネルの上端部が除去されるように、被加工物の該裏面を研削して該仕上げ厚みへと被加工物を薄化する研削ステップと、
を備えたことを特徴とする被加工物の加工方法。 - 該研削ステップを実施した後、被加工物に外力を付与して被加工物を個々のチップに分割する分割ステップを更に備えた請求項1記載の被加工物の加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017122264A JP6906845B2 (ja) | 2017-06-22 | 2017-06-22 | 被加工物の加工方法 |
TW107115377A TWI757482B (zh) | 2017-06-22 | 2018-05-07 | 被加工物的加工方法 |
CN201810578439.0A CN109119336B (zh) | 2017-06-22 | 2018-06-07 | 被加工物的加工方法 |
KR1020180070321A KR102518004B1 (ko) | 2017-06-22 | 2018-06-19 | 피가공물의 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017122264A JP6906845B2 (ja) | 2017-06-22 | 2017-06-22 | 被加工物の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019009218A JP2019009218A (ja) | 2019-01-17 |
JP6906845B2 true JP6906845B2 (ja) | 2021-07-21 |
Family
ID=64821896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017122264A Active JP6906845B2 (ja) | 2017-06-22 | 2017-06-22 | 被加工物の加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6906845B2 (ja) |
KR (1) | KR102518004B1 (ja) |
CN (1) | CN109119336B (ja) |
TW (1) | TWI757482B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7218056B2 (ja) * | 2019-02-20 | 2023-02-06 | 株式会社ディスコ | チップ及び枠体の少なくともいずれかを製造する方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332949A (ja) | 2000-05-19 | 2001-11-30 | Toshiba Corp | 弾性表面波素子の製造方法 |
JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP6097146B2 (ja) * | 2013-05-16 | 2017-03-15 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
US8883614B1 (en) * | 2013-05-22 | 2014-11-11 | Applied Materials, Inc. | Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach |
US9299614B2 (en) * | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
JP6230422B2 (ja) * | 2014-01-15 | 2017-11-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP6324796B2 (ja) * | 2014-04-21 | 2018-05-16 | 株式会社ディスコ | 単結晶基板の加工方法 |
JP6328485B2 (ja) * | 2014-05-13 | 2018-05-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016171214A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社ディスコ | 単結晶基板の加工方法 |
JP6300763B2 (ja) * | 2015-08-03 | 2018-03-28 | 株式会社ディスコ | 被加工物の加工方法 |
JP6625854B2 (ja) * | 2015-10-06 | 2019-12-25 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
-
2017
- 2017-06-22 JP JP2017122264A patent/JP6906845B2/ja active Active
-
2018
- 2018-05-07 TW TW107115377A patent/TWI757482B/zh active
- 2018-06-07 CN CN201810578439.0A patent/CN109119336B/zh active Active
- 2018-06-19 KR KR1020180070321A patent/KR102518004B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN109119336A (zh) | 2019-01-01 |
TWI757482B (zh) | 2022-03-11 |
JP2019009218A (ja) | 2019-01-17 |
CN109119336B (zh) | 2024-02-09 |
KR102518004B1 (ko) | 2023-04-04 |
TW201907456A (zh) | 2019-02-16 |
KR20190000308A (ko) | 2019-01-02 |
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