JP6906714B1 - 電力用半導体装置および電力変換装置 - Google Patents
電力用半導体装置および電力変換装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 239000000853 adhesive Substances 0.000 claims abstract description 211
- 230000001070 adhesive effect Effects 0.000 claims abstract description 211
- 230000002093 peripheral effect Effects 0.000 claims abstract description 109
- 230000002265 prevention Effects 0.000 claims abstract description 91
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 23
- 230000007423 decrease Effects 0.000 claims description 16
- 239000011148 porous material Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 description 28
- 239000011347 resin Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 230000017525 heat dissipation Effects 0.000 description 17
- 229920001187 thermosetting polymer Polymers 0.000 description 16
- 238000005304 joining Methods 0.000 description 15
- 239000012530 fluid Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 12
- 238000009413 insulation Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000003825 pressing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 239000011343 solid material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007777 multifunctional material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920003043 Cellulose fiber Polymers 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、実施の形態1に係る電力用半導体装置の構成を示す斜視模式図である。図2は、図1のII−II線に沿った断面模式図である。
次に、実施の形態2に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
次に、実施の形態3に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
次に、実施の形態4に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
次に、実施の形態5に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
次に、実施の形態6に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
次に、実施の形態7に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
次に、実施の形態8に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
次に、実施の形態9に係る電力用半導体装置100の構成について説明する。実施の形態1に係る電力用半導体装置100と同様の構成には実施の形態1に係る電力用半導体装置100と同じ符号を付し、その説明は繰り返さない。以下、主として、実施の形態1に係る電力用半導体装置100と異なる構成を中心に説明する。
本実施の形態は、上述した実施の形態1〜実施の形態9のいずれかに係る電力用半導体装置100を電力変換装置に適用したものである。本開示は特定の電力変換装置に限定されるものではないが、以下、実施の形態10として、三相のインバータに本開示を適用した場合について説明する。
Claims (14)
- パワーモジュール部と、
前記パワーモジュール部と接着された接着シートと、
前記接着シートを介して前記パワーモジュール部と接続された支持部材と、
前記パワーモジュール部と前記支持部材とに挟まれ、かつ前記接着シートの周囲に配置された流動防止枠とを備え、
前記接着シートは、前記流動防止枠の内周面に接する外周面を有し、
前記外周面における内圧の最大値を、前記内圧の最小値で除した値は、1以上10以下であり、
前記流動防止枠は、多孔質体で構成されている、電力用半導体装置。 - 前記接着シートの厚み方向に見て、前記内周面は、角部が円弧状の矩形である、請求項1に記載の電力用半導体装置。
- 前記接着シートの厚み方向に見て、前記内周面は、円形である、請求項1に記載の電力用半導体装置。
- 前記接着シートは、前記外周面に囲まれた中央部を含み、
前記中央部から前記外周面に向かうに従って、前記接着シートの厚みが増加している、請求項1に記載の電力用半導体装置。 - 前記流動防止枠は、1層で構成されている、請求項1に記載の電力用半導体装置。
- 前記接着シートの厚み方向に見て、前記内周面は、角部と、前記角部に連なる辺部とを有し、前記辺部は、内側に凸となるように折れ曲がっており、
前記辺部の中央から前記角部に向かうに従って、前記流動防止枠の幅は小さくなる、請求項5に記載の電力用半導体装置。 - 前記接着シートの厚み方向に見て、前記内周面は、角部と、前記角部に連なる辺部とを有し、前記辺部は、直線状であり、
前記辺部の中央から前記角部に向かうに従って、前記多孔質体の孔の直径は大きくなる、請求項5に記載の電力用半導体装置。 - 前記接着シートの厚み方向に見て、前記内周面は、角部と、前記角部に連なる辺部とを有し、前記辺部は、直線状であり、
前記辺部の中央から前記角部に向かうに従って、前記流動防止枠の幅は小さくなる、請求項5に記載の電力用半導体装置。 - 前記流動防止枠は、材料の異なる2以上の層で構成されている、請求項1に記載の電力用半導体装置。
- 前記接着シートの厚み方向に見て、前記内周面は、角部と、前記角部に連なる辺部とを有し、前記辺部は、内側に凸となるように折れ曲がっており、
前記辺部の中央から前記角部に向かうに従って、前記流動防止枠の幅は小さくなる、請求項9に記載の電力用半導体装置。 - 前記接着シートの厚み方向に見て、前記内周面は、角部と、前記角部に連なる辺部とを有し、前記辺部は、直線状であり、
前記辺部の中央から前記角部に向かうに従って、前記多孔質体の孔の直径は大きくなる、請求項9に記載の電力用半導体装置。 - 前記接着シートの厚み方向に見て、前記内周面は、角部と、前記角部に連なる辺部とを有し、前記辺部は、直線状であり、
前記辺部の中央から前記角部に向かうに従って、前記流動防止枠の幅は小さくなる、請求項9に記載の電力用半導体装置。 - 前記接着シートの厚み方向に見て、前記内周面は、角部と、前記角部に連なる辺部とを有し、
前記内周面に複数の凹部が設けられ、
前記辺部の中央から前記角部に向かうに従って、前記複数の凹部の密度が低くなる、請求項9に記載の電力用半導体装置。 - 請求項1から請求項13のいずれか1項に記載の電力用半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、を備えた電力変換装置。
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