JP6902255B2 - 紫外線発光素子 - Google Patents
紫外線発光素子 Download PDFInfo
- Publication number
- JP6902255B2 JP6902255B2 JP2016225108A JP2016225108A JP6902255B2 JP 6902255 B2 JP6902255 B2 JP 6902255B2 JP 2016225108 A JP2016225108 A JP 2016225108A JP 2016225108 A JP2016225108 A JP 2016225108A JP 6902255 B2 JP6902255 B2 JP 6902255B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type algan
- light emitting
- algan layer
- ultraviolet light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002704 AlGaN Inorganic materials 0.000 claims description 306
- 239000000758 substrate Substances 0.000 claims description 47
- 230000004888 barrier function Effects 0.000 claims description 28
- 239000010410 layer Substances 0.000 description 515
- 239000011777 magnesium Substances 0.000 description 57
- 238000000034 method Methods 0.000 description 35
- 239000010408 film Substances 0.000 description 29
- 239000007789 gas Substances 0.000 description 20
- 238000000137 annealing Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000002994 raw material Substances 0.000 description 13
- 239000002356 single layer Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
以下では、本実施形態の紫外線発光素子10について、図1に基づいて説明する。
1a 一表面
3 n型AlGaN層
3a 表面
3aa 部位
4 発光層
41 井戸層
42 障壁層
6 p型AlGaN層
6a 表面
61 第1のp型AlGaN層
62 第2のp型AlGaN層
600 最表層
620 発光層から最も離れた第2のp型AlGaN層
8 負電極
9 正電極
10 紫外線発光素子
20 積層体
Claims (3)
- n型AlGaN層、発光層、電子ブロック層及びp型AlGaN層の順に並んでいる積層体と、
前記n型AlGaN層の前記発光層側の表面において前記発光層で覆われていない部位に直接設けられている負電極と、
前記p型AlGaN層の表面上に直接設けられている正電極と、
を備え、
前記発光層は、複数の障壁層と複数の井戸層とが交互に並んでいる多重量子井戸構造を有し、
前記複数の井戸層の各々は、第1のAlGaN層により構成され、
前記複数の障壁層の各々は、前記第1のAlGaN層よりもAlの組成比が大きな第2のAlGaN層により構成され、
前記電子ブロック層は、第3のp型AlGaN層により構成され、
前記n型AlGaN層は、前記第1のAlGaN層よりもAlの組成比が大きく、
前記p型AlGaN層は、複数の第1のp型AlGaN層と複数の第2のp型AlGaN層とが交互に並んでいる積層構造を有し、
前記複数の第1のp型AlGaN層の各々は、前記第1のAlGaN層よりもAlの組成比が大きく、かつ8×10 19 cm -3 以上2×10 20 cm -3 以下の濃度のMgを含有しており、
前記複数の第2のp型AlGaN層の各々は、前記複数の第1のp型AlGaN層の各々よりも薄く、0.5nm以上5nm以下の厚みをもち、
前記第1のAlGaN層よりもAlの組成比が大きく、かつ3×10 20 cm -3 以上2×10 21 cm -3 以下の濃度のMgを含有しており、
前記第3のp型AlGaN層は、前記第1のp型AlGaN層及び前記第2のp型AlGaN層それぞれよりもAlの組成比が大きく、かつ前記第1のp型AlGaN層及び前記第2のp型AlGaN層のいずれのMgの濃度よりも低い濃度のMgを含有しており、
前記p型AlGaN層において前記正電極に接している最表層は、前記複数の第2のp型AlGaN層のうち前記発光層から最も離れた第2のp型AlGaN層である、
ことを特徴とする紫外線発光素子。 - 前記発光層は、UV−Cの紫外波長域又はUV−Bの紫外波長域の紫外線を放射するように構成されている、
ことを特徴とする請求項1に記載の紫外線発光素子。 - 前記積層体を支持する基板を備え、
前記積層体は、前記基板の一表面上に設けられ、
前記n型AlGaN層、前記発光層及び前記p型AlGaN層は、前記一表面からこの順に並んでいる、
ことを特徴とする請求項1または2に記載の紫外線発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016016986 | 2016-02-01 | ||
JP2016016986 | 2016-02-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017139447A JP2017139447A (ja) | 2017-08-10 |
JP2017139447A5 JP2017139447A5 (ja) | 2020-04-30 |
JP6902255B2 true JP6902255B2 (ja) | 2021-07-14 |
Family
ID=59499435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016225108A Active JP6902255B2 (ja) | 2016-02-01 | 2016-11-18 | 紫外線発光素子 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6902255B2 (ja) |
WO (1) | WO2017134713A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019036629A (ja) * | 2017-08-15 | 2019-03-07 | 国立研究開発法人理化学研究所 | 深紫外発光ダイオードおよびそれを備える電気機器 |
JP6379265B1 (ja) * | 2017-09-12 | 2018-08-22 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
US11302843B2 (en) | 2017-10-02 | 2022-04-12 | Dowa Electronics Materials Co., Ltd. | Deep ultraviolet light-emitting device and method of manufacturing same |
CN108231965B (zh) * | 2018-02-06 | 2019-05-24 | 华南师范大学 | 一种提高光输出的AlGaN基深紫外LED外延结构 |
JP7068577B2 (ja) | 2018-03-28 | 2022-05-17 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
CN110911531B (zh) * | 2018-09-14 | 2021-08-03 | 宁波安芯美半导体有限公司 | 一种发光二极管外延结构及发光二极管 |
CN110911529B (zh) * | 2018-09-14 | 2021-07-30 | 宁波安芯美半导体有限公司 | 一种发光二极管外延结构生长方法 |
JP7146589B2 (ja) * | 2018-11-15 | 2022-10-04 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP2020167321A (ja) * | 2019-03-29 | 2020-10-08 | 旭化成株式会社 | 窒化物半導体発光素子 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004214337A (ja) * | 2002-12-27 | 2004-07-29 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
JP5082444B2 (ja) * | 2004-04-28 | 2012-11-28 | 三菱化学株式会社 | 窒化物半導体発光素子 |
US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
JP5533093B2 (ja) * | 2010-03-18 | 2014-06-25 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
JP5601281B2 (ja) * | 2011-05-30 | 2014-10-08 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
JP5598437B2 (ja) * | 2011-07-12 | 2014-10-01 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
JP2015065245A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 半導体発光素子及び半導体発光素子の製造方法 |
US9843163B2 (en) * | 2014-03-31 | 2017-12-12 | Panasonic Corporation | Ultraviolet light emitting element and electrical device using same |
KR102300718B1 (ko) * | 2014-04-24 | 2021-09-09 | 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 | 자외선 발광 다이오드 및 그것을 구비한 전기 기기 |
JP2015216352A (ja) * | 2014-04-24 | 2015-12-03 | 国立研究開発法人理化学研究所 | 紫外発光ダイオードおよびそれを備える電気機器 |
-
2016
- 2016-11-18 JP JP2016225108A patent/JP6902255B2/ja active Active
- 2016-11-18 WO PCT/JP2016/004924 patent/WO2017134713A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2017134713A1 (ja) | 2017-08-10 |
JP2017139447A (ja) | 2017-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6902255B2 (ja) | 紫外線発光素子 | |
JP6573076B2 (ja) | 紫外線発光素子 | |
JP6472093B2 (ja) | 紫外線発光素子及びそれを用いた電気機器 | |
JP5279006B2 (ja) | 窒化物半導体発光素子 | |
WO2014073139A1 (ja) | 紫外半導体発光素子およびその製造方法 | |
JP2010010678A (ja) | 量子ドットデバイスおよびその製造方法 | |
JP2014078745A (ja) | 長波長放射を有する非極性iii窒化物発光ダイオード | |
JPWO2015146069A1 (ja) | 発光ダイオード素子 | |
JP5401145B2 (ja) | Iii族窒化物積層体の製造方法 | |
JP5873260B2 (ja) | Iii族窒化物積層体の製造方法 | |
US20130056747A1 (en) | Nitride semiconductor light emitting device and manufacturing method thereof | |
TWI681570B (zh) | 發光元件及發光元件之製造方法 | |
US9520527B1 (en) | Nitride semiconductor template and ultraviolet LED | |
KR20130022088A (ko) | 반도체 기판, 이를 이용한 발광소자 및 그 제조방법 | |
JP2014207328A (ja) | 半導体発光素子 | |
KR20140102422A (ko) | 질화물계 반도체 발광소자 | |
KR101560952B1 (ko) | 발광 다이오드용 에피택셜 웨이퍼 | |
TWI680587B (zh) | 發光元件 | |
TWI672827B (zh) | 磊晶晶圓以及發光二極體 | |
JP5898656B2 (ja) | Iii族窒化物半導体素子 | |
JP7340047B2 (ja) | 窒化物半導体発光素子の製造方法 | |
JP2011091077A (ja) | ZnO系化合物半導体素子 | |
US20220029053A1 (en) | Optoelectronic Semiconductor Component Having an Intermediate Layer and Method for Producing the Optoelectronic Semiconductor Component | |
CN113257969A (zh) | 非极性AlGaN基紫外LED外延片及制备方法 | |
JP2020061526A (ja) | 半導体成長用基板、半導体素子、半導体発光素子および半導体素子製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20190820 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20190930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20190930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191018 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191018 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20191120 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201012 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201027 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20201223 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210610 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210614 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6902255 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |