JP6895116B2 - Thin film capacitor, manufacturing method of thin film capacitor - Google Patents

Thin film capacitor, manufacturing method of thin film capacitor Download PDF

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JP6895116B2
JP6895116B2 JP2017073667A JP2017073667A JP6895116B2 JP 6895116 B2 JP6895116 B2 JP 6895116B2 JP 2017073667 A JP2017073667 A JP 2017073667A JP 2017073667 A JP2017073667 A JP 2017073667A JP 6895116 B2 JP6895116 B2 JP 6895116B2
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thin film
film capacitor
dielectric film
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JP2018181879A (en
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秀夫 多田
秀夫 多田
聖一 辻
聖一 辻
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Mitsubishi Electric Corp
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Description

本発明は、例えば高周波デバイスに用いられる薄膜コンデンサとその薄膜コンデンサの製造方法に関する。 The present invention relates to, for example, a thin film capacitor used in a high frequency device and a method for manufacturing the thin film capacitor.

特許文献１には、頂部電極の一部をエネルギビーム装置で除去することにより電気容量を変化させることができるモノリシックコンデンサが開示されている。特許文献２には、誘電体を、内部の電極とレーザーによりトリミング可能な上部電極とで挟んで容量を形成し、かつ上部電極の形成する表面には外部引き出し電極の露出を持たないレーザートリマブルコンデンサが開示されている。 Patent Document 1 discloses a monolithic capacitor whose electric capacity can be changed by removing a part of a top electrode with an energy beam device. Patent Document 2 states that a dielectric is sandwiched between an internal electrode and an upper electrode that can be trimmed by a laser to form a capacitance, and the surface formed by the upper electrode is not exposed to an external lead-out electrode. Capacitors are disclosed.

特表平０６−５１１１１０号公報Special Table No. 06-511110 特開平１０−１７２８６３号公報Japanese Unexamined Patent Publication No. 10-172863

特許文献１、２に開示されている高周波デバイス用薄膜コンデンサは、容量を減らすことはできたが、容量を増加させることはできない。そのため、容量を自在に増減できる薄膜コンデンサが求められていた。 The thin film capacitors for high-frequency devices disclosed in Patent Documents 1 and 2 can reduce the capacitance, but cannot increase the capacitance. Therefore, there has been a demand for a thin film capacitor whose capacity can be freely increased or decreased.

本発明は、上述のような課題を解決するためになされたもので、容量を自在に増減できる薄膜コンデンサとその薄膜コンデンサの製造方法を提供することを目的とする。 The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a thin film capacitor whose capacity can be freely increased or decreased and a method for manufacturing the thin film capacitor.

本願の発明に係る薄膜コンデンサは、セラミック基板と、該セラミック基板を囲む接地用電極と、該接地用電極の上に形成された誘電体膜と、該誘電体膜の上に形成された回路電極と、該誘電体膜の上に形成された複数の容量調整電極と、を備え、該複数の容量調整電極のうち少なくとも１つと該回路電極は、該誘電体膜の上で接続され、該回路電極の側面と、該複数の容量調整電極の各々の側面が対向していることを特徴とする。 The thin film capacitor according to the present invention includes a ceramic substrate, a grounding electrode surrounding the ceramic substrate, a dielectric film formed on the grounding electrode, and a circuit electrode formed on the dielectric film. And a plurality of capacitance adjusting electrodes formed on the dielectric film, and at least one of the plurality of capacitance adjusting electrodes and the circuit electrode are connected on the dielectric film, and the circuit is provided. The side surface of the electrode and the side surface of each of the plurality of capacitance adjusting electrodes are opposed to each other .

本願の発明に係る薄膜コンデンサの製造方法は、セラミック基板と、該セラミック基板を囲む接地用電極と、該接地用電極の上に形成された誘電体膜と、該誘電体膜の上に形成された回路電極と、該誘電体膜の上に形成され該回路電極と離れた複数の容量調整電極と、を備え、該回路電極の側面と該複数の容量調整電極の各々の側面が対向している薄膜コンデンサを製造する製造工程と、該製造工程の後に、該複数の容量調整電極のうち少なくとも１つと該回路電極とを該誘電体膜の上で接触させる接触工程と、を備えたことを特徴とする。

The method for manufacturing a thin film capacitor according to the present invention is a ceramic substrate, a grounding electrode surrounding the ceramic substrate, a dielectric film formed on the grounding electrode, and a dielectric film formed on the dielectric film. The circuit electrode is provided with a plurality of capacitance adjusting electrodes formed on the dielectric film and separated from the circuit electrode, and the side surfaces of the circuit electrode and the side surfaces of the plurality of capacitance adjusting electrodes face each other. It is provided with a manufacturing process for manufacturing a thin film capacitor, and a contact step for bringing at least one of the plurality of capacitance adjusting electrodes and the circuit electrode into contact with each other on the dielectric film after the manufacturing step. It is a feature.

本発明のその他の特徴は以下に明らかにする。 Other features of the present invention will be clarified below.

本発明によれば、誘電体膜の上に回路電極と容量調整電極とを形成することで、薄膜コンデンサの容量を自在に増減できる。 According to the present invention, the capacitance of the thin film capacitor can be freely increased or decreased by forming the circuit electrode and the capacitance adjusting electrode on the dielectric film.

実施の形態１に係る薄膜コンデンサの断面図である。It is sectional drawing of the thin film capacitor which concerns on Embodiment 1. FIG. 実施の形態１に係る薄膜コンデンサの平面図である。It is a top view of the thin film capacitor which concerns on Embodiment 1. FIG. 実施の形態１に係る薄膜コンデンサの実装例を示す断面図である。It is sectional drawing which shows the mounting example of the thin film capacitor which concerns on Embodiment 1. FIG. 回路電極と容量調整電極を接触させた薄膜コンデンサの平面図である。It is a top view of the thin film capacitor in which a circuit electrode and a capacitance adjustment electrode are in contact with each other. 実施の形態２に係る薄膜コンデンサの平面図である。It is a top view of the thin film capacitor which concerns on Embodiment 2. FIG. 実施の形態３に係る薄膜コンデンサの断面図である。It is sectional drawing of the thin film capacitor which concerns on Embodiment 3. FIG.

本発明の実施の形態に係る薄膜コンデンサと薄膜コンデンサの製造方法について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。 The thin film capacitor and the method for manufacturing the thin film capacitor according to the embodiment of the present invention will be described with reference to the drawings. The same or corresponding components may be designated by the same reference numerals and the description may be omitted.

実施の形態１．
図１は、実施の形態１に係る薄膜コンデンサの断面図である。この薄膜コンデンサは、 セラミック基板１と、セラミック基板１を囲む接地用電極２を備えている。接地用電極２はセラミック基板１を取り巻く導体である。接地用電極２は少なくともセラミック基板１の上面全体に形成されている。接地用電極２の上には誘電体膜３が形成されている。誘電体膜３の上には回路電極４ａが形成されている。回路電極４ａは薄膜コンデンサの上面電極として機能する導体である。誘電体膜３の上には、回路電極４ａに加えて、容量調整電極４ｂが形成されている。容量調整電極４ｂは、回路電極４ａと離れることも接することもできる電極である。 Embodiment 1.
FIG. 1 is a cross-sectional view of the thin film capacitor according to the first embodiment. This thin film capacitor includes a ceramic substrate 1 and a grounding electrode 2 surrounding the ceramic substrate 1. The grounding electrode 2 is a conductor surrounding the ceramic substrate 1. The grounding electrode 2 is formed on at least the entire upper surface of the ceramic substrate 1. A dielectric film 3 is formed on the grounding electrode 2. A circuit electrode 4a is formed on the dielectric film 3. The circuit electrode 4a is a conductor that functions as a top electrode of the thin film capacitor. A capacitance adjusting electrode 4b is formed on the dielectric film 3 in addition to the circuit electrode 4a. The capacitance adjusting electrode 4b is an electrode that can be separated from or in contact with the circuit electrode 4a.

図２は、実施の形態１に係る薄膜コンデンサの平面図である。回路電極４ａと容量調整電極４ｂは誘電体膜３の上に設けられている。回路電極４ａは横方向に長く形成されている。容量調整電極４ｂは複数形成することが好ましい。図２には、回路電極４ａとは離れている６つの容量調整電極４ｂが示されている。容量調整電極４ｂの側面と回路電極４ａの側面が対向している。 FIG. 2 is a plan view of the thin film capacitor according to the first embodiment. The circuit electrode 4a and the capacitance adjusting electrode 4b are provided on the dielectric film 3. The circuit electrode 4a is formed long in the lateral direction. It is preferable to form a plurality of capacitance adjusting electrodes 4b. FIG. 2 shows six capacitance adjusting electrodes 4b that are separated from the circuit electrodes 4a. The side surface of the capacitance adjusting electrode 4b and the side surface of the circuit electrode 4a face each other.

回路電極４ａの一端に第１ワイヤＷ１が接続されている。そして、回路電極４ａの他端に第２ワイヤＷ２が接続されている。周知のとおり、薄膜コンデンサの容量は、電極の面積と、誘電体膜の厚さと、誘電体膜の誘電率によって決定される。 The first wire W1 is connected to one end of the circuit electrode 4a. The second wire W2 is connected to the other end of the circuit electrode 4a. As is well known, the capacitance of a thin film capacitor is determined by the area of the electrode, the thickness of the dielectric film, and the dielectric constant of the dielectric film.

図３は、実施の形態１に係る薄膜コンデンサの実装例を示す断面図である。実装基板１０には、例えばトランジスタなどの半導体素子１２、接地用パターン１４および信号伝送用パターン１６が形成されている。第１ワイヤＷ１は半導体素子１２に接続され、第２ワイヤＷ２は信号伝送用パターン１６に接続されている。薄膜コンデンサの接地用電極２は接地用パターン１４に接続されている。薄膜コンデンサは、例えば高周波回路のインピーダンス整合のために用いられるものであるが、別の用途で用いてもよい。 FIG. 3 is a cross-sectional view showing a mounting example of the thin film capacitor according to the first embodiment. A semiconductor element 12 such as a transistor, a grounding pattern 14, and a signal transmission pattern 16 are formed on the mounting substrate 10, for example. The first wire W1 is connected to the semiconductor element 12, and the second wire W2 is connected to the signal transmission pattern 16. The grounding electrode 2 of the thin film capacitor is connected to the grounding pattern 14. Thin film capacitors are used, for example, for impedance matching in high frequency circuits, but may be used for other purposes.

本発明の実施の形態１に係る薄膜コンデンサは、回路電極４ａと容量調整電極４ｂを接触させるか、離すかによって、容量を自在に増減できるものである。図２に示される状態ではすべての容量調整電極４ｂが回路電極４ａから離れているので、回路電極４ａだけが上部電極として機能する。よって容量は比較的小さい。これに対し、回路電極４ａと容量調整電極４ｂを接触させると、回路電極４ａと容量調整電極４ｂが上部電極として機能するので、容量を高めることができる。 The thin film capacitor according to the first embodiment of the present invention can freely increase or decrease the capacitance depending on whether the circuit electrode 4a and the capacitance adjusting electrode 4b are brought into contact with each other or separated from each other. In the state shown in FIG. 2, since all the capacitance adjusting electrodes 4b are separated from the circuit electrodes 4a, only the circuit electrodes 4a function as upper electrodes. Therefore, the capacity is relatively small. On the other hand, when the circuit electrode 4a and the capacitance adjusting electrode 4b are brought into contact with each other, the circuit electrode 4a and the capacitance adjusting electrode 4b function as upper electrodes, so that the capacitance can be increased.

図４は、回路電極４ａと、２つの容量調整電極４ｂを接触させたことを示す薄膜コンデンサの平面図である。例えば回路電極４ａと容量調整電極４ｂを加熱することで、回路電極４ａと容量調整電極４ｂが接する接触部２０を形成する。図４には接触部２０を２箇所に形成することで回路電極４ａと２つの容量調整電極４ｂを接触させたことが示されている。これにより、回路電極４ａと２つの容量調整電極４ｂが薄膜コンデンサの上部電極として機能するので、回路電極４ａだけが上部電極として機能する場合と比べて容量を増加させることができる。また、回路電極４ａに１つの容量調整電極４ｂを接触させたり、回路電極４ａに３つ以上の容量調整電極４ｂを接触させたりすることで、容量の調整が可能となる。 FIG. 4 is a plan view of a thin film capacitor showing that the circuit electrode 4a and the two capacitance adjusting electrodes 4b are brought into contact with each other. For example, by heating the circuit electrode 4a and the capacitance adjusting electrode 4b, a contact portion 20 in which the circuit electrode 4a and the capacitance adjusting electrode 4b are in contact with each other is formed. FIG. 4 shows that the circuit electrode 4a and the two capacitance adjusting electrodes 4b are brought into contact with each other by forming the contact portions 20 at two positions. As a result, since the circuit electrode 4a and the two capacitance adjusting electrodes 4b function as the upper electrodes of the thin film capacitor, the capacitance can be increased as compared with the case where only the circuit electrode 4a functions as the upper electrode. Further, the capacitance can be adjusted by bringing one capacitance adjusting electrode 4b into contact with the circuit electrode 4a or by bringing three or more capacitance adjusting electrodes 4b into contact with the circuit electrode 4a.

本発明の実施の形態に係る薄膜コンデンサの製造方法を説明する。まず、図１、２に示す薄膜コンデンサを製造する。すなわち、セラミック基板１を囲む接地用電極２上に誘電体膜３を形成し、誘電体膜３の上に回路電極４ａと、回路電極４ａと離れた容量調整電極４ｂとを形成する。複数の容量調整電極４ｂを設けることが好ましい。このように、回路電極と容量調整電極４ｂが離れている薄膜コンデンサを製造する工程を製造工程と称する。 A method for manufacturing a thin film capacitor according to an embodiment of the present invention will be described. First, the thin film capacitors shown in FIGS. 1 and 2 are manufactured. That is, the dielectric film 3 is formed on the grounding electrode 2 surrounding the ceramic substrate 1, and the circuit electrode 4a and the capacitance adjusting electrode 4b separated from the circuit electrode 4a are formed on the dielectric film 3. It is preferable to provide a plurality of capacitance adjusting electrodes 4b. The process of manufacturing a thin film capacitor in which the circuit electrode and the capacitance adjusting electrode 4b are separated from each other in this way is referred to as a manufacturing process.

製造工程により、最小の容量を有する薄膜コンデンサが完成する。次いで、溶接により回路電極４ａと容量調整電極４ｂを接触させる。具体的には、回路電極４ａと容量調整電極４ｂの少なくとも一方を加熱して溶融させることで、回路電極４ａと容量調整電極４ｂを接続する。例えばレーザービームで回路電極４ａと容量調整電極４ｂの少なくとも一方を加熱することができる。レーザービーム以外の周知の溶接方法を採用してもよい。このように、製造工程の後に回路電極４ａと容量調整電極４ｂを接触させる工程を接触工程と称する。 The manufacturing process completes a thin film capacitor with the smallest capacitance. Next, the circuit electrode 4a and the capacitance adjusting electrode 4b are brought into contact with each other by welding. Specifically, the circuit electrode 4a and the capacitance adjusting electrode 4b are connected by heating and melting at least one of the circuit electrode 4a and the capacitance adjusting electrode 4b. For example, a laser beam can heat at least one of the circuit electrode 4a and the capacitance adjusting electrode 4b. A well-known welding method other than the laser beam may be adopted. The step of bringing the circuit electrode 4a and the capacitance adjusting electrode 4b into contact with each other after the manufacturing step is referred to as a contact step.

接触工程では、任意の数の容量調整電極４ｂを回路電極４ａに接触させる。これにより、薄膜コンデンサの容量を増加させることができる。薄膜コンデンサを高周波デバイス部品として用いる場合には、薄膜コンデンサの容量を測定しながら、任意の周波数で所望のインピーダンスが得られるように薄膜コンデンサの容量を調整することが可能となる。すなわち、薄膜コンデンサのインピーダンスを増減できることで、薄膜コンデンサを高周波デバイス用の整合調整コンデンサとして利用することができる。なお、製造工程直後の薄膜コンデンサが有する容量を使用する場合は、接触工程は省略できる。 In the contacting step, an arbitrary number of capacitance adjusting electrodes 4b are brought into contact with the circuit electrodes 4a. As a result, the capacity of the thin film capacitor can be increased. When the thin film capacitor is used as a high frequency device component, it is possible to adjust the capacity of the thin film capacitor so that a desired impedance can be obtained at an arbitrary frequency while measuring the capacity of the thin film capacitor. That is, since the impedance of the thin film capacitor can be increased or decreased, the thin film capacitor can be used as a matching adjustment capacitor for a high frequency device. When the capacity of the thin film capacitor immediately after the manufacturing process is used, the contacting process can be omitted.

このように、本発明の実施の形態１に係る薄膜コンデンサは、回路電極４ａと容量調整電極４ｂの接続有無によって容量を自在に増減できるものである。実施の形態１に係る薄膜コンデンサと薄膜コンデンサの製造方法は、この特徴を逸脱しない範囲で任意の変形が可能である。例えば、容量調整電極４ｂの数は必要に応じて決定することができる。複数の容量調整電極４ｂを設けた場合には、すべての容量調整電極４ｂを回路電極４ａから離した場合に容量が最小になる。そして、複数の容量調整電極４ｂのうち少なくとも１つを回路電極４ａに接触させることで、容量を高めることができる。すべての容量調整電極４ｂを回路電極４ａに接触させた場合に容量が最大になる。容量調整電極４ｂは複数設けることが好ましいが１つでもよい。 As described above, the thin film capacitor according to the first embodiment of the present invention can freely increase or decrease the capacitance depending on whether or not the circuit electrode 4a and the capacitance adjusting electrode 4b are connected. The thin film capacitor and the method for manufacturing the thin film capacitor according to the first embodiment can be arbitrarily modified without departing from this feature. For example, the number of capacitance adjusting electrodes 4b can be determined as needed. When a plurality of capacitance adjusting electrodes 4b are provided, the capacitance is minimized when all the capacitance adjusting electrodes 4b are separated from the circuit electrodes 4a. Then, the capacitance can be increased by bringing at least one of the plurality of capacitance adjusting electrodes 4b into contact with the circuit electrode 4a. The capacitance is maximized when all the capacitance adjusting electrodes 4b are brought into contact with the circuit electrodes 4a. It is preferable to provide a plurality of capacitance adjusting electrodes 4b, but one may be provided.

実施の形態１で説明したワイヤによる接続は例示である。回路電極４ａをコンデンサの電極として使用するあらゆる電気的接続を採用することができる。接触工程において回路電極４ａと容量調整電極４ｂを容易につなぐことができるように、製造工程では、回路電極４ａと容量調整電極４ｂはタイル状に設けることが好ましい。回路電極４ａと容量調整電極４ｂの分布は、必要とする容量が得られることと、接触工程が容易になることを考慮して、変形することができる。さらに、接触工程では溶接以外の方法を利用して回路電極４ａと容量調整電極４ｂを接触させてもよい。例えば導電材料を介在させて回路電極４ａと容量調整電極４ｂを接触させてもよい。上述した変形は以下の実施の形態に係る薄膜コンデンサと薄膜コンデンサの製造方法にも応用することができる。なお、以下の実施の形態に係る薄膜コンデンサと薄膜コンデンサの製造方法は、実施の形態１との共通点が多いので実施の形態１との相違点を中心に説明する。 The wire connection described in Embodiment 1 is an example. Any electrical connection that uses the circuit electrode 4a as the electrode of the capacitor can be employed. In the manufacturing process, it is preferable that the circuit electrode 4a and the capacitance adjusting electrode 4b are provided in a tile shape so that the circuit electrode 4a and the capacitance adjusting electrode 4b can be easily connected in the contacting step. The distribution of the circuit electrode 4a and the capacitance adjusting electrode 4b can be deformed in consideration of obtaining the required capacitance and facilitating the contact process. Further, in the contact step, the circuit electrode 4a and the capacitance adjusting electrode 4b may be brought into contact with each other by using a method other than welding. For example, the circuit electrode 4a and the capacitance adjusting electrode 4b may be brought into contact with each other with a conductive material interposed therebetween. The above-described modification can also be applied to the thin film capacitor and the method for manufacturing the thin film capacitor according to the following embodiments. Since the thin film capacitor and the method for manufacturing the thin film capacitor according to the following embodiment have much in common with the first embodiment, the differences from the first embodiment will be mainly described.

実施の形態２．
図５は、実施の形態２に係る薄膜コンデンサの平面図である。誘電体膜３は、接地用電極２の上に形成された第１誘電体膜３Ａと、接地用電極２の上に形成された第２誘電体膜３Ｂを備えている。第２誘電体膜３Ｂの誘電率は第１誘電体膜３Ａの誘電率とは異なる。例えば、第１誘電体膜３Ａの誘電率と第２誘電体膜３Ｂの誘電率の比が１０：１となるように、第１誘電体膜３Ａと第２誘電体膜３Ｂの材料を選択する。 Embodiment 2.
FIG. 5 is a plan view of the thin film capacitor according to the second embodiment. The dielectric film 3 includes a first dielectric film 3A formed on the grounding electrode 2 and a second dielectric film 3B formed on the grounding electrode 2. The dielectric constant of the second dielectric film 3B is different from the dielectric constant of the first dielectric film 3A. For example, the materials of the first dielectric film 3A and the second dielectric film 3B are selected so that the ratio of the dielectric constant of the first dielectric film 3A to the dielectric constant of the second dielectric film 3B is 10: 1. ..

３つの容量調整電極４ｂが第１誘電体膜３Ａの上に形成され、別の３つの容量調整電極４ｂが第２誘電体膜３Ｂの上に形成されている。そのため、第１誘電体膜３Ａの上に形成された容量調整電極４ｂを回路電極４ａに接触させたときと、第２誘電体膜３Ｂの上に形成した容量調整電極４ｂを回路電極に接触させたときとで、容量の増加量を変えることができる。第１誘電体膜３Ａの誘電率と第２誘電体膜３Ｂの誘電率の比を１０：１とした場合、第１誘電体膜３Ａの上の容量調整電極４ｂを回路電極４ａに接続することで容量を大きく増加させることができ、第２誘電体膜３Ｂの上の容量調整電極４ｂを回路電極４ａに接続することで容量を小さく増加させることができる。 Three capacitance adjusting electrodes 4b are formed on the first dielectric film 3A, and another three capacitance adjusting electrodes 4b are formed on the second dielectric film 3B. Therefore, when the capacitance adjusting electrode 4b formed on the first dielectric film 3A is brought into contact with the circuit electrode 4a, and when the capacitance adjusting electrode 4b formed on the second dielectric film 3B is brought into contact with the circuit electrode. The amount of increase in capacity can be changed depending on the time. When the ratio of the dielectric constant of the first dielectric film 3A to the dielectric constant of the second dielectric film 3B is 10: 1, the capacitance adjusting electrode 4b on the first dielectric film 3A is connected to the circuit electrode 4a. The capacitance can be greatly increased by connecting the capacitance adjusting electrode 4b on the second dielectric film 3B to the circuit electrode 4a, and the capacitance can be increased small.

図５には、接触部２０が２箇所に形成されることで、２つの容量調整電極４ｂが回路電極４ａに接続されたことが示されている。しかしながら、必要な容量に応じて、任意の数の容量調整電極４ｂを回路電極４ａに接続することができる。複数の容量調整電極４ｂのうち少なくとも１つは第１誘電体膜３Ａの上に形成し、複数の容量調整電極４ｂのうち少なくとも１つは第２誘電体膜３Ｂの上に形成することで上記の効果を得ることができる。つまり、複数の容量調整電極４ｂのうち少なくとも１つを回路電極４ａに接触させることで容量を増加させることができる。 FIG. 5 shows that the two capacitance adjusting electrodes 4b are connected to the circuit electrodes 4a by forming the contact portions 20 at two positions. However, an arbitrary number of capacitance adjusting electrodes 4b can be connected to the circuit electrodes 4a depending on the required capacitance. At least one of the plurality of capacitance adjusting electrodes 4b is formed on the first dielectric film 3A, and at least one of the plurality of capacitance adjusting electrodes 4b is formed on the second dielectric film 3B. The effect of can be obtained. That is, the capacitance can be increased by bringing at least one of the plurality of capacitance adjusting electrodes 4b into contact with the circuit electrode 4a.

図５の変形例として、回路電極４ａを第１誘電体膜３Ａの上だけに形成し、複数の容量調整電極４ｂを第２誘電体膜３Ｂの上に形成してもよい。２つの誘電率が異なる誘電体膜に対してどのように電極を分布させるかは、必要とする容量と、必要とする容量の増加量に応じて決定する。また、３つ以上の誘電率が異なる誘電体膜を接地用電極２の上に形成してもよい。 As a modification of FIG. 5, the circuit electrode 4a may be formed only on the first dielectric film 3A, and the plurality of capacitance adjusting electrodes 4b may be formed on the second dielectric film 3B. How the electrodes are distributed to the dielectric films having two different dielectric constants is determined according to the required capacitance and the amount of increase in the required capacitance. Further, three or more dielectric films having different dielectric constants may be formed on the grounding electrode 2.

実施の形態３．
図６は、実施の形態３に係る薄膜コンデンサの断面図である。誘電体膜３は、第１部分３ａと、第１部分３ａより厚い第２部分３ｂを有している。第２部分３ｂの厚さは例えば第１部分３ａの厚さの２倍である。容量調整電極４ｂのうち少なくとも１つは第１部分３ａの上に形成され、容量調整電極４ｂのうち少なくとも１つは第２部分３ｂの上に形成されている。第１部分３ａの上の容量調整電極４ｂを回路電極４ａに接続した場合は容量を大きく増加させることができる。これに対し、第２部分３ｂの上の容量調整電極４ｂを回路電極４ａに接続した場合は、第２部分３ｂが第１部分３ａより厚いので、容量を小さく増加させることになる。 Embodiment 3.
FIG. 6 is a cross-sectional view of the thin film capacitor according to the third embodiment. The dielectric film 3 has a first portion 3a and a second portion 3b that is thicker than the first portion 3a. The thickness of the second portion 3b is, for example, twice the thickness of the first portion 3a. At least one of the capacitance adjusting electrodes 4b is formed on the first portion 3a, and at least one of the capacitance adjusting electrodes 4b is formed on the second portion 3b. When the capacitance adjusting electrode 4b on the first portion 3a is connected to the circuit electrode 4a, the capacitance can be greatly increased. On the other hand, when the capacitance adjusting electrode 4b above the second portion 3b is connected to the circuit electrode 4a, the second portion 3b is thicker than the first portion 3a, so that the capacitance is slightly increased.

必要な容量に応じて、任意の数の容量調整電極４ｂを回路電極４ａに接続することができる。複数の容量調整電極４ｂのうち少なくとも１つは第１部分３ａの上に形成し、複数の容量調整電極４ｂのうち少なくとも１つは第２部分３ｂの上に形成することで上記の効果を得ることができる。つまり、複数の容量調整電極４ｂのうち少なくとも１つを回路電極４ａに接触させることで容量を増加させることができる。 An arbitrary number of capacitance adjusting electrodes 4b can be connected to the circuit electrodes 4a depending on the required capacitance. The above effect is obtained by forming at least one of the plurality of capacitance adjusting electrodes 4b on the first portion 3a and forming at least one of the plurality of capacitance adjusting electrodes 4b on the second portion 3b. be able to. That is, the capacitance can be increased by bringing at least one of the plurality of capacitance adjusting electrodes 4b into contact with the circuit electrode 4a.

２つの厚さが異なる誘電体に対してどのように電極を分布させるかは、必要とする容量と、必要とする容量の増加量に応じて決定する。また、３つ以上の厚みの異なる部分を有する誘電体膜を形成してもよい。なお、ここまでで説明した各実施の形態の特徴は組み合わせて用いてもよい。 How the electrodes are distributed to the two dielectrics having different thicknesses is determined according to the required capacitance and the amount of increase in the required capacitance. Further, a dielectric film having three or more portions having different thicknesses may be formed. The features of each embodiment described so far may be used in combination.

１ セラミック基板、 ２ 接地用電極、 ３ 誘電体膜、 ４ａ 回路電極、 ４ｂ 容量調整電極 1 Ceramic substrate, 2 Grounding electrode, 3 Dielectric film, 4a circuit electrode, 4b Capacity adjustment electrode

Claims (11)

セラミック基板と、
前記セラミック基板を囲む接地用電極と、
前記接地用電極の上に形成された誘電体膜と、
前記誘電体膜の上に形成された回路電極と、
前記誘電体膜の上に形成された複数の容量調整電極と、を備え、
前記複数の容量調整電極のうち少なくとも１つと前記回路電極は、前記誘電体膜の上で接続され、
前記回路電極の側面と、前記複数の容量調整電極の各々の側面が対向していることを特徴とする薄膜コンデンサ。 With a ceramic substrate
The grounding electrode surrounding the ceramic substrate and
A dielectric film formed on the grounding electrode and
The circuit electrodes formed on the dielectric film and
A plurality of capacitance adjusting electrodes formed on the dielectric film are provided.
At least one of the plurality of capacitance adjusting electrodes and the circuit electrode are connected on the dielectric film .
A thin film capacitor characterized in that the side surface of the circuit electrode and the side surface of each of the plurality of capacitance adjusting electrodes face each other. 前記複数の容量調整電極のうち少なくとも１つは前記回路電極に接していることを特徴とする請求項１に記載の薄膜コンデンサ。 Wherein at least one of the plurality of capacity adjustment electrode thin film capacitor according to claim 1, characterized in that in contact with the circuit electrode. 前記誘電体膜は、前記接地用電極の上に形成された第１誘電体膜と、前記第１誘電体膜とは誘電率が異なり、前記接地用電極の上に形成された第２誘電体膜と、を備えたことを特徴とする請求項１に記載の薄膜コンデンサ。 The dielectric film has a different dielectric constant from the first dielectric film formed on the ground electrode and the first dielectric film, and the second dielectric film is formed on the ground electrode. The thin film capacitor according to claim 1, further comprising a film. 前記複数の容量調整電極のうち少なくとも１つは前記第１誘電体膜の上に形成され、
前記複数の容量調整電極のうち少なくとも１つは前記第２誘電体膜の上に形成されたことを特徴とする請求項３に記載の薄膜コンデンサ。 At least one of the plurality of capacity adjusting electrode is formed on the first dielectric film,
At least one thin film capacitor according to claim 3, characterized in that formed on the second dielectric layer of the plurality of capacity adjusting electrode. 前記複数の容量調整電極のうち少なくとも１つは前記回路電極に接していることを特徴とする請求項４に記載の薄膜コンデンサ。 Wherein at least one of the plurality of capacity adjustment electrode thin film capacitor according to claim 4, characterized in that in contact with the circuit electrode. 前記誘電体膜は、第１部分と、前記第１部分より厚い第２部分を有したことを特徴とする請求項１に記載の薄膜コンデンサ。 The thin film capacitor according to claim 1, wherein the dielectric film has a first portion and a second portion thicker than the first portion. 前記複数の容量調整電極のうち少なくとも１つは前記第１部分の上に形成され、
前記複数の容量調整電極のうち少なくとも１つは前記第２部分の上に形成されたことを特徴とする請求項６に記載の薄膜コンデンサ。 At least one of the plurality of capacity adjusting electrode is formed on the first portion,
At least one thin film capacitor according to claim 6, characterized in that formed on the second portion of the plurality of capacity adjusting electrode. 前記複数の容量調整電極のうち少なくとも１つは前記回路電極に接していることを特徴とする請求項７に記載の薄膜コンデンサ。 Wherein at least one of the plurality of capacity adjustment electrode thin film capacitor according to claim 7, characterized in that in contact with the circuit electrode. 前記回路電極の一端に接続された第１ワイヤと、
前記回路電極の他端に接続された第２ワイヤと、を備えたことを特徴とする請求項１〜８のいずれか１項に記載の薄膜コンデンサ。 The first wire connected to one end of the circuit electrode and
The thin film capacitor according to any one of claims 1 to 8 , further comprising a second wire connected to the other end of the circuit electrode. セラミック基板と、前記セラミック基板を囲む接地用電極と、前記接地用電極の上に形成された誘電体膜と、前記誘電体膜の上に形成された回路電極と、前記誘電体膜の上に形成され前記回路電極と離れた複数の容量調整電極と、を備え、前記回路電極の側面と前記複数の容量調整電極の各々の側面が対向している薄膜コンデンサを製造する製造工程と、
前記製造工程の後に、前記複数の容量調整電極のうち少なくとも１つと前記回路電極とを前記誘電体膜の上で接触させる接触工程と、を備えたことを特徴とする薄膜コンデンサの製造方法。 On the ceramic substrate, the grounding electrode surrounding the ceramic substrate, the dielectric film formed on the grounding electrode, the circuit electrode formed on the dielectric film, and the dielectric film. and manufacturing process are formed and a plurality of capacity adjustment electrodes spaced with the circuit electrode, to produce a thin film capacitor each side of the side surface and the plurality of capacitance adjusting electrode of said circuit electrodes is opposed,
A method for manufacturing a thin film capacitor, comprising: after the manufacturing step, a contact step of bringing at least one of the plurality of capacitance adjusting electrodes and the circuit electrode into contact with each other on the dielectric film. 前記接触工程では、溶接により前記回路電極と前記容量調整電極を接触させることを特徴とする請求項１０に記載の薄膜コンデンサの製造方法。 Wherein in the contacting step, the method of manufacturing the thin film capacitor according to claim 1 0, characterized in that contacting the capacitance adjusting electrode and the circuit electrode by welding.
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