JP6882307B2 - 結晶性セルロースの製造 - Google Patents
結晶性セルロースの製造 Download PDFInfo
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- JP6882307B2 JP6882307B2 JP2018539838A JP2018539838A JP6882307B2 JP 6882307 B2 JP6882307 B2 JP 6882307B2 JP 2018539838 A JP2018539838 A JP 2018539838A JP 2018539838 A JP2018539838 A JP 2018539838A JP 6882307 B2 JP6882307 B2 JP 6882307B2
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- JP
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- Prior art keywords
- reaction
- slurry
- cellulose
- cellulosic material
- hypochlorite
- Prior art date
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Images
Classifications
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- C08H—DERIVATIVES OF NATURAL MACROMOLECULAR COMPOUNDS
- C08H8/00—Macromolecular compounds derived from lignocellulosic materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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Description
(a)遷移金属触媒と、初期pHが約6.0超であり、かつ、最終pHが約9.0未満である次亜ハロゲン酸塩溶液とを含む水性スラリー中でセルロース系材料を反応させる工程、及び
(b)結晶性セルロース画分(fraction)を回収する工程
を含む方法を含む場合がある。
(a)遷移金属触媒と、次亜ハロゲン酸塩溶液とを含む水性スラリー中でセルロース系材料を反応させる工程、(b)セルロース系材料をアルカリ溶液中で洗浄する工程、(c)工程(a)を繰り返す工程、及び(d)CNC画分(fraction)を回収する工程
を含む方法を含む場合がある。
式中、kは速度定数であり、Aは頻度因子であり、Eaは活性化エネルギーであり、Rは気体定数であり、Tはケルビン単位での温度である。
ln(1/時間)を1/温度に対してプロットしたとき、直線の切片がlnAであり、傾きが−Ea/Rである。両方の直線が、この関係に良好に当てはまることを示した。
本発明の記述は例示及び説明のために示されており、しかし、網羅的であること、又は、開示された形態での発明に限定されることは意図されない。多くの改変及び変更が、本発明の範囲及び精神から逸脱することなく当業者には明らかであろう。様々な実施形態が、本発明の原理と、実用的な応用とを最もよく説明するために、また、意図される特定の用途に適するような様々な改変を伴う様々な実施形態について当業者が本発明を理解することを可能にするために選ばれ、記載された。
Claims (19)
- 結晶性セルロースをセルロース系材料から製造する方法であって、
(a)遷移金属触媒と、次亜ハロゲン酸塩溶液とを含む水性スラリー中で前記セルロース系材料を反応させる工程であり、
前記次亜ハロゲン酸塩は、次亜塩素酸塩、次亜ヨウ素酸塩又は次亜臭素酸塩を含み、前記スラリーの初期pHは9.0〜12.0の間であり、かつ、前記スラリーの最終pHは9.0未満である、前記工程と、
(b)結晶性セルロース画分を回収する工程と
を含む、方法。 - 前記次亜ハロゲン酸塩が、次亜塩素酸ナトリウム若しくは次亜塩素酸カルシウム、次亜ヨウ素酸ナトリウム若しくは次亜ヨウ素酸カルシウム、又は次亜臭素酸ナトリウム若しくは次亜臭素酸カルシウムを含む、請求項1に記載の方法。
- 前記次亜ハロゲン酸塩が、次亜塩素酸ナトリウムを含む、請求項2に記載の方法。
- 前記スラリーの最終pHが8.0未満である、請求項1、2又は3に記載の方法。
- 前記スラリーの最終pHが7.0未満である、請求項4に記載の方法。
- 前記スラリーが、500mVを超える初期の酸化還元電位(ORP)を有する、請求項1〜5のいずれか一項に記載の方法。
- 前記スラリーが0.0mV未満の最終ORPを有する、請求項6に記載の方法。
- 前記スラリーがさらに緩衝剤を含む、請求項1〜7のいずれか一項に記載の方法。
- 前記緩衝剤がリン酸塩及び多価有機酸を含む、請求項8に記載の方法。
- 前記スラリー中の次亜ハロゲン酸塩対セルロース系材料の比率が1mol/kgから10mol/kg(乾燥重量基準)である、請求項1〜9のいずれか一項に記載の方法。
- 前記スラリーが50℃〜85℃の間に加熱される、請求項1〜10のいずれか一項に記載の反応。
- 工程(a)の前記反応が、結晶性セルロースの出現が認められるまで継続され、又は繰り返される、請求項1〜11のいずれか一項に記載の方法。
- 工程(a)の反応を酸化還元電位の有意な低下が認められるまで進行させ、生じたセルロース系材料を回収し、アルカリ溶液中で洗浄し、工程(a)を繰り返して前記結晶性セルロースを生じさせる、請求項12に記載の方法。
- 前記アルカリ溶液が、12.0のpHを有するNaOHの溶液を含む、請求項13に記載の方法。
- 前記アルカリ溶液が30℃〜90℃の間に加熱される、請求項13に記載の方法。
- 前記反応が、少なくとも1回のさらなる量の次亜ハロゲン酸塩を加えることによって継続される、請求項12に記載の方法。
- さらなる次亜ハロゲン酸塩が酸化還元電位の低下の後で添加され、そのような添加工程が少なくとも2回繰り返される、請求項16に記載の方法。
- 添加される次亜ハロゲン酸塩の総量が、1mol/kgセルロース系材料から20mol/kg(乾燥重量)の間である、請求項1〜17のいずれか一項に記載の方法。
- セルロースナノ結晶(CNC)をセルロース系材料から製造する方法であって、
(a)遷移金属触媒と、次亜ハロゲン酸塩溶液とを含む水性スラリー中で前記セルロース系材料を反応させる工程であり、
前記次亜ハロゲン酸塩は、次亜塩素酸塩、次亜ヨウ素酸塩又は次亜臭素酸塩を含み、前記スラリーの初期pHは9.0〜12.0の間であり、かつ、前記スラリーの最終pHは9.0未満である、前記工程と、
(b)前記セルロース系材料をアルカリ溶液中で洗浄する工程と、
(c)工程(a)を繰り返す工程と、
(d)CNC画分を回収する工程と
を含む、方法。
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US201662288185P | 2016-01-28 | 2016-01-28 | |
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BR112023026311A2 (pt) * | 2021-06-16 | 2024-03-05 | Nano Green Biorefineries Inc | Métodos para produzir nanocelulose cristalina (cnc), método de um único pico de distribuição de tamanho e nanocristais de celulose |
CN113900418B (zh) * | 2021-09-30 | 2024-05-03 | 广西埃索凯循环科技有限公司 | 一种高纯度一水硫酸锌的智能生产*** |
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