JP6876148B2 - 安定化高ドープ・シリコン・カーバイド - Google Patents
安定化高ドープ・シリコン・カーバイド Download PDFInfo
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- JP6876148B2 JP6876148B2 JP2019556788A JP2019556788A JP6876148B2 JP 6876148 B2 JP6876148 B2 JP 6876148B2 JP 2019556788 A JP2019556788 A JP 2019556788A JP 2019556788 A JP2019556788 A JP 2019556788A JP 6876148 B2 JP6876148 B2 JP 6876148B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 66
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 65
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 68
- 239000013078 crystal Substances 0.000 claims description 55
- 239000002019 doping agent Substances 0.000 claims description 49
- 229910052757 nitrogen Inorganic materials 0.000 claims description 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 30
- 229910052732 germanium Inorganic materials 0.000 claims description 29
- 230000012010 growth Effects 0.000 claims description 26
- 239000002994 raw material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000859 sublimation Methods 0.000 claims description 3
- 230000008022 sublimation Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 41
- 239000000463 material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 238000005130 seeded sublimation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (4)
- シリコン・カーバイドを製造する方法であって、
シードを成長ゾーン内に配置するステップと、
原料物質、窒素ドーパント及びひずみ補償成分を前記成長ゾーン内に導入するステップと、
シリコン・カーバイド結晶が該シリコン・カーバイド結晶内で1×10 18 cm −3 から1×1021cm−3の窒素濃度で窒素ドーパントを含み、前記ひずみ補償成分が、ゲルマニウム、スズ、ヒ素、リン、及びそれらの組合せを含むグループから選択されるように、前記成長ゾーンを加熱することによる昇華により、前記シード上の前記シリコン・カーバイド結晶を成長させるステップと、
を含み、
前記ひずみ補償成分は、前記窒素ドーパントと同数の電子をもつ元素及び/又は同一の多数キャリヤ型を有する元素を含み、前記シリコン・カーバイド結晶は、前記シリコン・カーバイド結晶内の前記ひずみ補償成分の濃度が2×1018cm−3から2×1020cm−3となるように成長させられる、シリコン・カーバイドを製造する方法。 - 前記シリコン・カーバイド結晶をウェハに切り出すステップをさらに含む、請求項1に記載の方法。
- 前記ひずみ補償成分が、ゲルマニウムを含む、請求項1に記載の方法。
- 前記シリコン・カーバイド結晶の前記窒素の濃度が、1×1018cm−3から1×1020cm−3 である、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/398,185 | 2017-01-04 | ||
US15/398,185 US10577720B2 (en) | 2017-01-04 | 2017-01-04 | Stabilized, high-doped silicon carbide |
PCT/US2017/067189 WO2018128797A1 (en) | 2017-01-04 | 2017-12-19 | Stabilized, high-doped silicon carbide |
Publications (2)
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JP2020503241A JP2020503241A (ja) | 2020-01-30 |
JP6876148B2 true JP6876148B2 (ja) | 2021-05-26 |
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JP2019556788A Active JP6876148B2 (ja) | 2017-01-04 | 2017-12-19 | 安定化高ドープ・シリコン・カーバイド |
Country Status (5)
Country | Link |
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US (2) | US10577720B2 (ja) |
EP (1) | EP3565919B1 (ja) |
JP (1) | JP6876148B2 (ja) |
CN (1) | CN110268104B (ja) |
WO (1) | WO2018128797A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI663297B (zh) * | 2017-10-06 | 2019-06-21 | 環球晶圓股份有限公司 | 碳化矽晶體及其製造方法 |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
WO2021129270A1 (zh) * | 2019-12-24 | 2021-07-01 | 山东天岳先进科技股份有限公司 | 一种碳化硅单晶、衬底和制备用装置 |
CN111172592B (zh) * | 2019-12-24 | 2021-03-26 | 山东天岳先进科技股份有限公司 | 一种掺杂碳化硅单晶、衬底及制备方法和使用的装置 |
CN115279956A (zh) | 2019-12-27 | 2022-11-01 | 沃孚半导体公司 | 大直径碳化硅晶片 |
CN113981528B (zh) * | 2020-07-27 | 2024-06-21 | 环球晶圆股份有限公司 | 碳化硅晶片的制造方法以及半导体结构 |
CN112725893B (zh) * | 2020-12-23 | 2022-07-22 | 北京天科合达半导体股份有限公司 | 一种导电型碳化硅单晶及其制备方法 |
US12024794B2 (en) | 2021-06-17 | 2024-07-02 | Wolfspeed, Inc. | Reduced optical absorption for silicon carbide crystalline materials |
CN114038934B (zh) * | 2021-09-24 | 2024-02-09 | 北京科技大学 | 基于共掺杂一维SiC纳米结构的高温紫外光电探测器制备方法 |
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JP3876628B2 (ja) * | 2001-02-07 | 2007-02-07 | 株式会社デンソー | 炭化珪素単結晶の製造方法および炭化珪素単結晶 |
US7601441B2 (en) | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
JP4964672B2 (ja) | 2007-05-23 | 2012-07-04 | 新日本製鐵株式会社 | 低抵抗率炭化珪素単結晶基板 |
JP4811354B2 (ja) * | 2007-06-11 | 2011-11-09 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
US8377806B2 (en) | 2010-04-28 | 2013-02-19 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
JP5839315B2 (ja) * | 2010-07-30 | 2016-01-06 | 株式会社デンソー | 炭化珪素単結晶およびその製造方法 |
US9306010B2 (en) * | 2012-03-14 | 2016-04-05 | Infineon Technologies Ag | Semiconductor arrangement |
EP2940196B1 (en) | 2012-12-28 | 2017-03-15 | Toyota Jidosha Kabushiki Kaisha | Method for producing n-type sic single crystal |
JP6168806B2 (ja) * | 2013-03-22 | 2017-07-26 | 株式会社東芝 | 半導体装置 |
JP6230323B2 (ja) * | 2013-08-01 | 2017-11-15 | 株式会社東芝 | 半導体装置 |
JP5741652B2 (ja) * | 2013-08-30 | 2015-07-01 | トヨタ自動車株式会社 | n型SiC単結晶及びその製造方法 |
JP5905864B2 (ja) * | 2013-09-27 | 2016-04-20 | トヨタ自動車株式会社 | SiC単結晶及びその製造方法 |
JP2016052961A (ja) | 2014-09-03 | 2016-04-14 | 三菱電機株式会社 | 炭化珪素単結晶、及びその製造方法 |
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2017
- 2017-01-04 US US15/398,185 patent/US10577720B2/en active Active
- 2017-12-19 CN CN201780085956.8A patent/CN110268104B/zh active Active
- 2017-12-19 JP JP2019556788A patent/JP6876148B2/ja active Active
- 2017-12-19 WO PCT/US2017/067189 patent/WO2018128797A1/en unknown
- 2017-12-19 EP EP17829453.4A patent/EP3565919B1/en active Active
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2020
- 2020-01-24 US US16/751,246 patent/US11371163B2/en active Active
Also Published As
Publication number | Publication date |
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CN110268104A (zh) | 2019-09-20 |
CN110268104B (zh) | 2021-11-16 |
US20200157705A1 (en) | 2020-05-21 |
WO2018128797A1 (en) | 2018-07-12 |
JP2020503241A (ja) | 2020-01-30 |
US11371163B2 (en) | 2022-06-28 |
US10577720B2 (en) | 2020-03-03 |
US20180187332A1 (en) | 2018-07-05 |
EP3565919B1 (en) | 2023-10-18 |
EP3565919A1 (en) | 2019-11-13 |
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