JP6847013B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
- Publication number
- JP6847013B2 JP6847013B2 JP2017189402A JP2017189402A JP6847013B2 JP 6847013 B2 JP6847013 B2 JP 6847013B2 JP 2017189402 A JP2017189402 A JP 2017189402A JP 2017189402 A JP2017189402 A JP 2017189402A JP 6847013 B2 JP6847013 B2 JP 6847013B2
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- Prior art keywords
- flow path
- heat dissipation
- power semiconductor
- dissipation base
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- 230000017525 heat dissipation Effects 0.000 claims description 44
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000003507 refrigerant Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 description 20
- 238000003466 welding Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 8
- 239000000498 cooling water Substances 0.000 description 7
- 239000011324 bead Substances 0.000 description 6
- 238000005304 joining Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
Claims (3)
- パワー半導体素子を有し当該パワー半導体素子を樹脂部材で封止する回路体と、
前記回路体を挟む第1放熱ベース及び第2放熱ベースと、
前記回路体を挟んで対向しておりかつ冷媒を流す流路を形成する第1流路形成体及び第2流路形成体と、を備え、
前記第1流路形成体は、前記第1放熱ベースに塞がれる第1開口を形成し、
前記第2流路形成体は、前記第2放熱ベースに塞がれる第2開口を形成し、
前記第1放熱ベース及び前記第2放熱ベースのそれぞれは、主面と、側面と、により形成され、
前記第1放熱ベースの前記側面の一部が、前記第1開口の開口空間を形成する前記第1流路形成体の内側面と対向し、
前記第2放熱ベースの前記主面の一部が、前記第2開口の周辺を形成する前記第2流路形成体の外面と対向し、
互いに対向する前記第1放熱ベースの前記側面の一部と前記第1流路形成体の内側面とが接合され、
互いに対向する前記第2放熱ベースの前記主面の一部と前記第2流路形成体の外面とが接合されるパワー半導体装置。 - 請求項1に記載のパワー半導体装置において、
前記第1放熱ベースと前記第1流路形成体の接合部には金属溶融部が形成され、
前記第2放熱ベースと前記第2流路形成体の接合部には金属溶融部が形成されるパワー半導体装置。 - 請求項1または2に記載のパワー半導体装置において、
前記第2流路形成体は、前記第2開口部の縁が前記第2放熱ベースに向う方向に沿って薄くなるように形成されるパワー半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017189402A JP6847013B2 (ja) | 2017-09-29 | 2017-09-29 | パワー半導体装置 |
PCT/JP2018/028187 WO2019064873A1 (ja) | 2017-09-29 | 2018-07-27 | パワー半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017189402A JP6847013B2 (ja) | 2017-09-29 | 2017-09-29 | パワー半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019068533A JP2019068533A (ja) | 2019-04-25 |
JP6847013B2 true JP6847013B2 (ja) | 2021-03-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017189402A Active JP6847013B2 (ja) | 2017-09-29 | 2017-09-29 | パワー半導体装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6847013B2 (ja) |
WO (1) | WO2019064873A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111211059B (zh) * | 2018-11-22 | 2023-07-04 | 矽品精密工业股份有限公司 | 电子封装件及其制法与散热件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5502805B2 (ja) * | 2011-06-08 | 2014-05-28 | 日立オートモティブシステムズ株式会社 | パワーモジュールおよびそれを用いた電力変換装置 |
JP6398889B2 (ja) * | 2015-06-24 | 2018-10-03 | トヨタ自動車株式会社 | 電力変換装置 |
-
2017
- 2017-09-29 JP JP2017189402A patent/JP6847013B2/ja active Active
-
2018
- 2018-07-27 WO PCT/JP2018/028187 patent/WO2019064873A1/ja active Application Filing
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WO2019064873A1 (ja) | 2019-04-04 |
JP2019068533A (ja) | 2019-04-25 |
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