JP6842327B2 - Radiation detector and radiation detector - Google Patents

Radiation detector and radiation detector Download PDF

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JP6842327B2
JP6842327B2 JP2017053458A JP2017053458A JP6842327B2 JP 6842327 B2 JP6842327 B2 JP 6842327B2 JP 2017053458 A JP2017053458 A JP 2017053458A JP 2017053458 A JP2017053458 A JP 2017053458A JP 6842327 B2 JP6842327 B2 JP 6842327B2
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光吉 小林
光吉 小林
怜美 田口
怜美 田口
勲 高須
勲 高須
励 長谷川
励 長谷川
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Description

本発明の実施形態は、放射線検出器及び放射線検出装置に関する。 Embodiments of the present invention relate to a radiation detector and a radiation detector.

光電変換層で変換された電荷を検出する光検出器が知られている。例えば、一対の電極層の間に光電変換層を配置し、光電変換層で変換された電荷を、電極を介して読出す構成が知られている。以下では、この構成単位を検出素子と呼称する。検出器の入射面を大きくするため、検出素子をアレイ状に敷き詰める構成が開示されている。信号量を増やさずにより大きな面積の検出器を実現するためには、検出素子面積を大きくする必要があるが、検出素子面積が大きくなると読み出し回路において高周波ノイズが増幅されやすくなり、信号に対するノイズ比が悪化するという問題があった。このため、従来技術ではノイズ量を抑えつつ検出面を大きくする事は困難であった。 A photodetector that detects the charge converted by the photoelectric conversion layer is known. For example, there is known a configuration in which a photoelectric conversion layer is arranged between a pair of electrode layers, and the electric charge converted by the photoelectric conversion layer is read out through the electrodes. Hereinafter, this structural unit will be referred to as a detection element. A configuration in which detection elements are laid out in an array is disclosed in order to increase the incident surface of the detector. In order to realize a detector with a larger area without increasing the signal amount, it is necessary to increase the area of the detection element. However, if the area of the detection element is large, high frequency noise is likely to be amplified in the readout circuit, and the noise ratio to the signal. There was a problem that it got worse. For this reason, it has been difficult to increase the detection surface while suppressing the amount of noise by the conventional technique.

特開２０１４−０５６０６７号公報Japanese Unexamined Patent Publication No. 2014-05067 特許第５７５０３９４号公報Japanese Patent No. 5750394

本発明の実施形態は、信号量の増加を抑制し、かつ高周波ノイズの小さい高感度な放射線検出器を提供する。 An embodiment of the present invention provides a highly sensitive radiation detector that suppresses an increase in signal amount and has low high-frequency noise.

本発明の実施形態によれば放射線検出器は、第１方向に複数配置され、放射線を電気信号として光電変換する光電変換層と、光電変換層間に配置される導入体と、を具備し、導入体は、前記放射線を導入する部分を有し、この導入体の導入する部分と、第１方向に垂直な第２方向を含む面と、の間の鋭角が６０°以下である。 According to the embodiment of the present invention, a plurality of radiation detectors are arranged in the first direction, and include a photoelectric conversion layer that photoelectrically converts radiation as an electric signal, and an introducer arranged between the photoelectric conversion layers, and introduces the radiation detectors. The body has a portion into which the radiation is introduced, and the sharp angle between the portion into which the introduced body is introduced and the surface including the second direction perpendicular to the first direction is 60 ° or less.

図１は、第１の実施形態に係る放射線検出器を示す模式図である。FIG. 1 is a schematic view showing a radiation detector according to the first embodiment. 図２は、図１のｐ−ｐ´を第１方向に沿って切断した断面図である。FIG. 2 is a cross-sectional view of pp'of FIG. 1 cut along the first direction. 図３は、放射線が、導入体２によって導入される導入経路である。FIG. 3 shows an introduction route in which radiation is introduced by the introduction body 2. 図４は、放射線検出器の特性を例示するグラフ図である。FIG. 4 is a graph illustrating the characteristics of the radiation detector. 図５は、放射線検出器の特性を例示するグラフ図である。FIG. 5 is a graph illustrating the characteristics of the radiation detector. 図６は、各検出素子１の受光面の形状である。FIG. 6 shows the shape of the light receiving surface of each detection element 1. 図７は、第２の実施形態に係る放射線検出器１０のｐ−ｐ´を第１方向に沿って切断した断面図である。FIG. 7 is a cross-sectional view of the radiation detector 10 according to the second embodiment cut along the first direction. 図８は、検出装置の一例を表す模式図である。FIG. 8 is a schematic view showing an example of the detection device.

以下図面を参照して、本発明の実施形態を説明する。同じ符号が付されているものは、互いに対応するものを示す。なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比が異なって表される場合もある。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Those with the same reference numerals indicate those corresponding to each other. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, and the like are not necessarily the same as those in reality. Further, even when the same parts are represented, the dimensions and ratios may be different from each other depending on the drawings.

（第１の実施形態）
図１は第１の実施形態に係る放射線検出器１０である。 (First Embodiment)
FIG. 1 is a radiation detector 10 according to the first embodiment.

図１に示すように、本実施形態に係る放射線検出器１０は、半導体検出素子１が所定の間隔を隔てて複数、２次元配置される。 As shown in FIG. 1, in the radiation detector 10 according to the present embodiment, a plurality of semiconductor detection elements 1 are arranged two-dimensionally at predetermined intervals.

半導体検出素子１は、第１の電極層５と、光電変換層４と、第２の電極層８と、基板３と、を含む。本実施の形態では、光電変換素子４は、第１の電極層５と第２の電極層８との間に配置されている。検出素子１は、基板３の受光面において正方形をしており、アレイ状に二次元配列している。受光面とは、放射線の入射方向に対してほぼ垂直な平面である。導入体２は、第１方向における検出素子１間に設けられている。 The semiconductor detection element 1 includes a first electrode layer 5, a photoelectric conversion layer 4, a second electrode layer 8, and a substrate 3. In the present embodiment, the photoelectric conversion element 4 is arranged between the first electrode layer 5 and the second electrode layer 8. The detection element 1 has a square shape on the light receiving surface of the substrate 3, and is two-dimensionally arranged in an array. The light receiving surface is a plane substantially perpendicular to the incident direction of radiation. The introducer 2 is provided between the detection elements 1 in the first direction.

光電変換層４は放射線（例えば、β線）のエネルギーを電荷（電気信号ともいう）に変換する。光電変換層４は、例えば、アモルファスシリコンなどの無機材料や、ＣＩＧＳ（銅、インジウム、ガリウム、セレンの化合物）や、有機材料などを主成分とする。主成分とする、とは、７０％以上の含有率であること示す。また、光電変換層４として、パンクロ感光性の有機光電変換膜を用いてもよい。光電変換層４に有機光電変換膜を用いると、放射線検出器を自在に曲げることができる。 The photoelectric conversion layer 4 converts the energy of radiation (for example, β rays) into electric charges (also referred to as electric signals). The photoelectric conversion layer 4 contains, for example, an inorganic material such as amorphous silicon, CIGS (compound of copper, indium, gallium, and selenium), an organic material, and the like as main components. The term "main component" indicates that the content is 70% or more. Further, as the photoelectric conversion layer 4, a panchromatic photosensitive organic photoelectric conversion film may be used. When an organic photoelectric conversion film is used for the photoelectric conversion layer 4, the radiation detector can be bent freely.

光電変換層４の構成材料は、上記に限定されない。なお、光電変換層４は、波長選択性を有していてもよい。波長選択性とは、光電変換対象の波長領域以外の波長の光を透過させることを示す。この場合、例えば、光電変換層４は、キナクリドンや、サブフタロシアニン等を含む構成としてもよい。なお、光電変換層４は、有機材料を主成分とすることが好ましい。 The constituent material of the photoelectric conversion layer 4 is not limited to the above. The photoelectric conversion layer 4 may have wavelength selectivity. The wavelength selectivity means that light having a wavelength other than the wavelength region to be photoelectrically converted is transmitted. In this case, for example, the photoelectric conversion layer 4 may be configured to contain quinacridone, subphthalocyanine, or the like. The photoelectric conversion layer 4 preferably contains an organic material as a main component.

有機材料を主成分とする光電変換層４を用いると、有機材料を主成分としない場合に比べて、光電変換層４の抵抗率を高くすることが出来る。光電変換層４の抵抗率が高いほど、光電変換層４で発生した電荷が、光電変換層４における、他の検出素子１からの電荷が各検出素子１に混入することを抑制することができる。 When the photoelectric conversion layer 4 containing an organic material as a main component is used, the resistivity of the photoelectric conversion layer 4 can be increased as compared with the case where the organic material is not used as a main component. The higher the resistivity of the photoelectric conversion layer 4, the more it is possible to prevent the charges generated in the photoelectric conversion layer 4 from being mixed with the charges from the other detection elements 1 in the photoelectric conversion layer 4. ..

また、光電変換層４は、ナノ粒子を含むことが好ましい。光電変換層４にナノ粒子を含むことにより、粒子密度や粒子径等の変化により入射した放射線の屈折率を部分々で制御することができる。そのため、放射線から検出素子１が取り出せるエネルギーを増やすことができる。ナノ粒子の材料は、例えば、酸化チタンである。 Further, the photoelectric conversion layer 4 preferably contains nanoparticles. By including the nanoparticles in the photoelectric conversion layer 4, the refractive index of the incident radiation can be partially controlled by changes in the particle density, the particle diameter, and the like. Therefore, the energy that can be extracted from the radiation by the detection element 1 can be increased. The material of the nanoparticles is, for example, titanium oxide.

光電変換層４の厚みは限定されない。厚みとは、第１方向に交差する第２方向に一致する。なお、交差するとは、ほぼ直交していること意味する。光電変換層４の各々の厚みは、例えば、１ｎｍ以上１ｍｍ以下の範囲であり、１μｍ以上５００μｍ以下の範囲が好ましい。 The thickness of the photoelectric conversion layer 4 is not limited. The thickness corresponds to the second direction intersecting the first direction. In addition, intersecting means that they are almost orthogonal to each other. The thickness of each of the photoelectric conversion layers 4 is, for example, in the range of 1 nm or more and 1 mm or less, preferably in the range of 1 μm or more and 500 μm or less.

次に、第１の電極層５及び第２の電極層８について説明する。 Next, the first electrode layer 5 and the second electrode layer 8 will be described.

第１の電極層５及び第２の電極層８は、光電変換層４が入射した放射線から変換した電気信号を配線層７に出力する。電極層５及び電極層８は、導電性を有する材料で構成すればよい。電極層５及び８は、例えば、ＩＴＯ、グラフェン、ＺｎＯ、アルミニウム、金などで構成する。 The first electrode layer 5 and the second electrode layer 8 output an electric signal converted from the radiation incident on the photoelectric conversion layer 4 to the wiring layer 7. The electrode layer 5 and the electrode layer 8 may be made of a conductive material. The electrode layers 5 and 8 are made of, for example, ITO, graphene, ZnO, aluminum, gold, or the like.

電極層５及び８の厚みは限定されない。電極層５及び８の厚みは、例えば、３５ｎｍである。また、電極５と電極８とで、厚みが異なっていてもよい。 The thickness of the electrode layers 5 and 8 is not limited. The thickness of the electrode layers 5 and 8 is, for example, 35 nm. Further, the thickness of the electrode 5 and the electrode 8 may be different.

検出素子１間には導入体２が配置される。導入体２は、第２方向に突き出ており検出素子１に放射線を導入する。この導入体２が放射線を検出素子に導入する事により、受光面の面積を変えずに入射面積の大きい放射線検出器１０を実現出来る。 The introducer 2 is arranged between the detection elements 1. The introducer 2 projects in the second direction and introduces radiation into the detection element 1. By introducing radiation into the detection element by the introducer 2, it is possible to realize a radiation detector 10 having a large incident area without changing the area of the light receiving surface.

図２は、図１のｐ−ｐ´を第１方向に沿って切断した断面図である。 FIG. 2 is a cross-sectional view of pp'of FIG. 1 cut along the first direction.

図２に示すように導入体２は配線層７上に設けられている。本明細書で、上とは、第２方向において放射線入射側を示している。配線層７は、導入体２は、各第１の電極層５から出力された電気信号を信号処理部１１に入力する。配線層７の材料は、例えば、ポリイミドが用いられる。信号処理部１１は、各第１の電極層５から出力された電気信号を用いて様々な処理を行う。信号処理部１１では、例えば放射線の検出エネルギーを特定して、画像データとして表示部１３に出力する事が行われる。 As shown in FIG. 2, the introduction body 2 is provided on the wiring layer 7. In the present specification, the above refers to the radiation incident side in the second direction. In the wiring layer 7, the introduction body 2 inputs the electric signal output from each of the first electrode layers 5 to the signal processing unit 11. As the material of the wiring layer 7, for example, polyimide is used. The signal processing unit 11 performs various processes using the electric signals output from each of the first electrode layers 5. In the signal processing unit 11, for example, the detection energy of radiation is specified and output as image data to the display unit 13.

光電変換層４は、各第１の電極層５上に設けられ、その上面が放射線の入射する受光面となっている。 The photoelectric conversion layer 4 is provided on each of the first electrode layers 5, and the upper surface thereof is a light receiving surface on which radiation is incident.

基板３の材料は、例えば、シリコンやガラスである。なお、基板３の構成材料は、シリコンに限定されない。 The material of the substrate 3 is, for example, silicon or glass. The constituent material of the substrate 3 is not limited to silicon.

図２において、導入体２は、放射線入射側に頂点が来るように、第２方向に三角形状に突き出ており、放射線入射側の三角形の斜辺に放射線が入射したとき、反射して、検出素子１に導入する。導入体２の材料は、例えば、W,Pb,Ag,Au,Moや基板３と同一材料が用いられる。導入体２の作成方法については、例えば３Ｄプリンタを用いたり、インゴットからの削り出しで作成される。また、必ずしもアレイは一体で形成される必要はなく、例えば検出素子単位で作成し、後で検出素子と組み合わせても良い。 In FIG. 2, the introducer 2 protrudes in a triangular shape in the second direction so that the apex comes to the radiation incident side, and when radiation is incident on the hypotenuse of the triangle on the radiation incident side, it is reflected and detected. Introduce to 1. As the material of the introduction body 2, for example, the same material as W, Pb, Ag, Au, Mo and the substrate 3 is used. As for the method of creating the introduction body 2, for example, it is created by using a 3D printer or by shaving from an ingot. Further, the array does not necessarily have to be formed integrally, and for example, it may be created for each detection element and later combined with the detection element.

次に検出素子１間に入射した放射線のうち、検出素子１に導入できたものの割合である回収率と導入体２の第１方向の長さに対する第２方向の長さの比の関係を説明する。図３に示すように導入体２に入射する放射線は、反射して検出素子１に導入されるものと検出素子１に導入されないものがある。反射して検出素子１に導入される分だけ、本実施形態に係る放射線検出器１０は高感度になる。図４は、検出素子１間に入射した放射線のうち、検出素子１に導入できたものの割合である回収率と導入体２の第１方向の長さに対する第２方向の長さの比の関係を示した図である。例えば、図４に示したように、第１方向の長さに対する第２方向の長さの比が３の時、検出素子１間（導入体２）に入射した放射線の４５％を検出素子１に導入することができる。上記では、一例を示したが、導入体２は、第１方向の長さに対する第２方向の長さの比が０．５以上であることが好ましい。 Next, the relationship between the recovery rate, which is the ratio of the radiation incident between the detection elements 1 and the radiation that could be introduced into the detection element 1, and the ratio of the length in the second direction to the length in the first direction of the introduced body 2 will be described. To do. As shown in FIG. 3, the radiation incident on the introduction body 2 is reflected and introduced into the detection element 1 and may not be introduced into the detection element 1. The radiation detector 10 according to the present embodiment has high sensitivity as much as it is reflected and introduced into the detection element 1. FIG. 4 shows the relationship between the recovery rate, which is the ratio of the radiation incident between the detection elements 1 that could be introduced into the detection element 1, and the ratio of the length in the second direction to the length in the first direction of the introduced body 2. It is a figure which showed. For example, as shown in FIG. 4, when the ratio of the length in the second direction to the length in the first direction is 3, 45% of the radiation incident between the detection elements 1 (introducing body 2) is detected by the detection element 1. Can be introduced in. Although an example has been shown above, the introduction body 2 preferably has a ratio of the length in the second direction to the length in the first direction of 0.5 or more.

次に、導入体２が、画素ピッチにおいて検出素子１間が占める割合と検出素子１間に入射した放射線のうち、検出素子１に導入できたものの割合である回収率の関係について図５を用いて説明する。画素ピッチとは、受光面において、検出素子１の面積と検出素子１間の面積（導入体２が設けられる場合は、導入体２の底面積）を足したものである。ここでは、図５は第１方向の長さに対する第２方向の長さの比が３で計算している。例えば、検出素子１の受光面が正方形かつ第１方向の長さが２ｍｍであり、検出素子１間の長さが２ｍｍの時、検出素子１間の受光面に占める割合は７５％を占め、検出素子１に対して３倍の面積を持つ。この時、検出素子１に入射する放射線量を１００としたとき、導入体２がない場合とある場合を考える。導入体２がない場合、検出可能な放射線量は、検出素子１に入射するだけであるので、放射線の検出量は１００である。一方で、導入体２がある場合、検出可能な放射線量は、検出素子１へ入射する放射線と導入体２によって検出素子１に導入される放射線の和となる。導入体２によって検出素子１に導入される放射線量は、面積比（ここでは、３）×入射放射線（ここでは、１００）×回収率（ここでは、０．２５）と示すことができ、７５と算出できる。したがって、検出量は、１００＋７５＝１７５となり、導入体２を設けることで、感度が１．７５倍になる。上記では、一例を示したが、画素ピッチに対する前記導入体２の第１方向の長さの比が０．０２５以上２．２以下であることが好ましい。 Next, FIG. 5 is used with reference to FIG. 5 regarding the relationship between the ratio of the introduction body 2 between the detection elements 1 in the pixel pitch and the recovery rate which is the ratio of the radiation incident between the detection elements 1 that could be introduced into the detection element 1. I will explain. The pixel pitch is the sum of the area of the detection element 1 and the area between the detection elements 1 (if the introduction body 2 is provided, the bottom area of the introduction body 2) on the light receiving surface. Here, in FIG. 5, the ratio of the length in the second direction to the length in the first direction is calculated as 3. For example, when the light receiving surface of the detection element 1 is square and the length in the first direction is 2 mm and the length between the detection elements 1 is 2 mm, the ratio of the light receiving surface between the detection elements 1 to the light receiving surface is 75%. It has three times the area of the detection element 1. At this time, when the amount of radiation incident on the detection element 1 is 100, it is considered that there is a case where the introducer 2 is absent. In the absence of the introducer 2, the amount of radiation that can be detected is only incident on the detection element 1, so the amount of radiation that can be detected is 100. On the other hand, when there is an introducer 2, the detectable radiation amount is the sum of the radiation incident on the detection element 1 and the radiation introduced into the detection element 1 by the introducer 2. The amount of radiation introduced into the detection element 1 by the introducer 2 can be expressed as area ratio (here, 3) × incident radiation (here, 100) × recovery rate (here, 0.25), which is 75. Can be calculated. Therefore, the detection amount is 100 + 75 = 175, and the sensitivity is increased 1.75 times by providing the introducer 2. Although an example is shown above, the ratio of the length of the introduced body 2 in the first direction to the pixel pitch is preferably 0.025 or more and 2.2 or less.

本実施形態に係る放射線検出器１０は、導入体２を備えることで、高周波ノイズの小さい高感度な放射線検出器１０を実現出来る。例えば信号処理部１１にチャージアンプ回路が含まれる場合、接続する半導体検出素子の容量に比例して高周波数領域のノイズが増幅されるという特徴がある。したがって導入体２により入射面積が拡大しても検出素子面積が変わらなければ、チャージアンプ回路を発生源とするノイズ増大を抑制する事が出来る。 By including the introducer 2, the radiation detector 10 according to the present embodiment can realize a highly sensitive radiation detector 10 with low high-frequency noise. For example, when the signal processing unit 11 includes a charge amplifier circuit, it is characterized in that noise in a high frequency region is amplified in proportion to the capacitance of the connected semiconductor detection element. Therefore, if the detection element area does not change even if the incident area is expanded by the introducer 2, it is possible to suppress the increase in noise caused by the charge amplifier circuit.

さらに、図２のように導入体２の放射線を導入する部分（導入体２の形状である三角形の斜辺部分）と第２方向を含む面との間の鋭角θが６０°以下であってもよい。ここで、鋭角とは、0°より大きく90°より小さい角度のことである。 Further, as shown in FIG. 2, even if the acute angle θ between the portion where the radiation of the introduced body 2 is introduced (the hypotenuse portion of the triangle which is the shape of the introduced body 2) and the surface including the second direction is 60 ° or less. Good. Here, the acute angle is an angle larger than 0 ° and smaller than 90 °.

また、図１の例によらず、図６のように、各検出素子１の受光面の形状は、長方形（図６（ａ））や三角形（図６（ｂ））や六角形（図６（ｃ））であってもよい。形状は異なっていても、検出素子(１a、１b、１c)及び導入体(２a、２b、２c)の役割は図１と同じである。 Further, regardless of the example of FIG. 1, as shown in FIG. 6, the shape of the light receiving surface of each detection element 1 is a rectangle (FIG. 6 (a)), a triangle (FIG. 6 (b)), or a hexagon (FIG. 6). (C)) may be used. Although the shapes are different, the roles of the detection elements (1a, 1b, 1c) and the introducer (2a, 2b, 2c) are the same as those in FIG.

図２の例によらず、隣接する第１及び第２の電極層の間には電極の信号を外部に取り出すための配線層７が設けられていてもよい。また、配線層７は基板に対して光電変換層４と逆側に配置されていてもよい。 Regardless of the example of FIG. 2, a wiring layer 7 for extracting an electrode signal to the outside may be provided between the adjacent first and second electrode layers. Further, the wiring layer 7 may be arranged on the opposite side of the photoelectric conversion layer 4 with respect to the substrate.

（第２の実施形態）
図７は、第２の実施形態に係る放射線検出器１０のｐ−ｐ´を第１方向に沿って切断した断面図である。 (Second embodiment)
FIG. 7 is a cross-sectional view of the radiation detector 10 according to the second embodiment cut along the first direction.

第１の実施形態と異なる点のみを説明する。 Only the differences from the first embodiment will be described.

本実施形態に係る放射線検出器１４は、第１の実施形態に係る放射線検出器１０に第２方向において、検出素子１上及び導入体２上に放射線を緩衝する緩衝層６をさらに具備する。 The radiation detector 14 according to the present embodiment further includes a buffer layer 6 for buffering radiation on the detection element 1 and the introducer 2 in the second direction in the radiation detector 10 according to the first embodiment.

緩衝層６は、導入体２よりも低密度な素材で形成される。また、光吸収性の素材であることが好ましい。例えば、カーボンブラックや銀系ナノ粒子、及びそれらを含む有機コート、無機コート等である。形成方法としては、例えば蒸着や塗布による方法が挙げられる。緩衝層６の層厚は、特に１０μｍ以上であることが好ましい。 The buffer layer 6 is made of a material having a lower density than the introduction body 2. Moreover, it is preferable that it is a light-absorbing material. For example, carbon black and silver nanoparticles, and an organic coat and an inorganic coat containing them. Examples of the forming method include a method by vapor deposition or coating. The layer thickness of the buffer layer 6 is particularly preferably 10 μm or more.

光電変換層４に入射した放射線は、エネルギーが高いほど光電変換層４を透過しやすく、光電変換層４で生成する信号量が小さいため、信号検出が困難となる。緩衝層６を備えることで、検出素子１が検出できない強いエネルギーの放射線を緩衝して、検出素子１が検出できる放射線のエネルギーまで緩和することができる。 The higher the energy of the radiation incident on the photoelectric conversion layer 4, the easier it is for the radiation to pass through the photoelectric conversion layer 4, and the amount of signal generated by the photoelectric conversion layer 4 is small, which makes signal detection difficult. By providing the buffer layer 6, it is possible to buffer the radiation of strong energy that cannot be detected by the detection element 1 and reduce the energy of the radiation that can be detected by the detection element 1.

（適応例）
図８は、放射線検出装置９の一例を示す模式図である。 (Adaptation example)
FIG. 8 is a schematic view showing an example of the radiation detection device 9.

本実施形態に係る放射線検出器１０は、放射線検出装置９に適用することができる。 The radiation detector 10 according to the present embodiment can be applied to the radiation detection device 9.

放射線検出装置９は、放射線検出器１０と、信号処理部１１と、通信部１２と、表示部１３と、を備える。放射線検出器１０、通信部１２、および表示部１３と、信号処理部１１と、はデータや信号を授受可能に接続されている。 The radiation detection device 9 includes a radiation detector 10, a signal processing unit 11, a communication unit 12, and a display unit 13. The radiation detector 10, the communication unit 12, the display unit 13, and the signal processing unit 11 are connected so as to be able to exchange data and signals.

通信部１２は、ネットワークなどを介して外部装置と通信する。本実施の形態では、通信部１２は、信号処理部１１による特定結果を示す情報を、外部装置へ送信する。表示部１３は、各種画像を表示する。本実施の形態では、表示部１３は、信号処理部１１による判定結果を示す情報を、表示する。 The communication unit 12 communicates with an external device via a network or the like. In the present embodiment, the communication unit 12 transmits information indicating the specific result of the signal processing unit 11 to the external device. The display unit 13 displays various images. In the present embodiment, the display unit 13 displays information indicating the determination result by the signal processing unit 11.

なお、放射線検出装置は、表示部１３および通信部１２の何れか一方を備えた構成であってもよい。また、放射線検出装置を構成する各部は、１つの筐体に収められていてもよいし、複数の筐体に分割されて配置されていてもよい。 The radiation detection device may be configured to include either the display unit 13 or the communication unit 12. Further, each part constituting the radiation detection device may be housed in one housing, or may be divided into a plurality of housings and arranged.

本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。この実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。この実施形態やその変形は、説明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。 Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. This embodiment can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. This embodiment and its modifications are included in the scope of the invention described in the claims and the equivalent scope thereof, as well as in the scope and gist of the description.

１・・検出素子、２・・導入体、３・・基板、４・・光電変換層、５・・第１の電極層、６・・緩衝層、７・・配線層、８・・第２の電極層、９・・放射線検出装置、１０・・放射線検出器、１１・・信号処理部、１２・・通信部、１３・・表示部 1 ... detection element, 2 ... introduction body, 3 ... substrate, 4 ... photoelectric conversion layer, 5 ... first electrode layer, 6 ... buffer layer, 7 ... wiring layer, 8 ... second Electrode layer, 9 ... Radiation detector, 10 ... Radiation detector, 11 ... Signal processing unit, 12 ... Communication unit, 13 ... Display unit

Claims (14)

第１方向に複数配置され、放射線を電気信号として変換する変換層と、
前記変換層間に配置され、前記放射線入射側に突き出た導入体と、を具備し、
前記導入体は、基板と同一材料を含み、前記放射線を前記変換層に導入する部分を有し、この導入する部分と、前記第１方向に垂直な第２方向を含む面と、の間の鋭角が６０°以下である放射線検出器。 A conversion layer that is arranged in the first direction and converts radiation into an electrical signal,
It is provided with an introducer which is arranged between the conversion layers and protrudes to the radiation incident side.
The introduced body contains the same material as the substrate, has a portion for introducing the radiation into the conversion layer, and is between the introduced portion and the surface including the second direction perpendicular to the first direction. A radiation detector with an acute angle of 60 ° or less. 前記導入体は、前記第１方向の長さに対する前記第２方向の長さの比が０．５以上である
請求項１に記載の放射線検出器。 The radiation detector according to claim 1, wherein the introduced body has a ratio of the length in the second direction to the length in the first direction of 0.5 or more. 前記導入体はW,Pb,Ag,Au,Moの少なくとも１つを含む請求項１または２に記載の放射線検出器。 The radiation detector according to claim 1 or 2, wherein the introduced body contains at least one of W, Pb, Ag, Au, and Mo. 前記第２方向において、前記変換層上及び前記導入体上のうちの少なくとも一方に前
記放射線を緩衝する緩衝層をさらに具備する請求項１乃至３のいずれか記載の放射線検出
器。 The radiation detector according to any one of claims 1 to 3, further comprising a buffer layer that buffers the radiation on at least one of the conversion layer and the introduction body in the second direction. 前記緩衝層は、前記導入体よりも低密度である請求項４に記載の放射線検出器。 The radiation detector according to claim 4, wherein the buffer layer has a lower density than that of the introduced body. 前記緩衝層は、光吸収性の素材を用いる請求項４または５に記載の放射線検出器。 The radiation detector according to claim 4 or 5, wherein the buffer layer uses a light-absorbing material. 前記緩衝層は、１０μｍ以上の層厚である請求項４乃至６のいずれか記載の放射線検出器。 The radiation detector according to any one of claims 4 to 6, wherein the buffer layer has a layer thickness of 10 μm or more. 前記変換層は、有機変換層を含む請求項１乃至７のいずれか記載の放射線検出器。 The radiation detector according to any one of claims 1 to 7, wherein the conversion layer includes an organic conversion layer. 前記有機変換層はナノ粒子を含む請求項８に記載の放射線検出器。 The radiation detector according to claim 8, wherein the organic conversion layer contains nanoparticles. 第１の電極層と第２の電極層との間に前記変換層が設けられ、前記第１の電極層間に配置される配線層をさらに具備し、
前記導入体は、前記配線層上に設けられる請求項１乃至９のいずれか記載の放射線検出器。 The conversion layer is provided between the first electrode layer and the second electrode layer, and a wiring layer arranged between the first electrode layers is further provided.
The radiation detector according to any one of claims 1 to 9, wherein the introduced body is provided on the wiring layer. 前記放射線は、β線である請求項１乃至１０のいずれか記載の放射線検出器。 The radiation detector according to any one of claims 1 to 10 , wherein the radiation is β rays. 前記導入体は、前記第１方向に沿って切断した断面が前記放射線入射側に突き出た三角形
である請求項１乃至１１のいずれか記載の放射線検出器。 The radiation detector according to any one of claims 1 to 11, wherein the introduced body is a triangle whose cross section cut along the first direction is a triangle protruding toward the radiation incident side. 前記導入する部分が前記三角形の斜辺である請求項１２に記載の放射線検出器。 The radiation detector according to claim 12, wherein the portion to be introduced is the hypotenuse of the triangle. 請求項１乃至１３のいずれか記載の放射線検出器と、
前記放射線検出器とデータや信号の授受可能な信号処理部と、
前記信号処理部による特定結果を示す情報を、外部装置へ送信する通信部と、
前記信号処理部による判定結果を示す情報を、表示する表示部と、
を具備する放射線検出装置。 The radiation detector according to any one of claims 1 to 13 and
The radiation detector, a signal processing unit that can exchange data and signals, and
A communication unit that transmits information indicating a specific result by the signal processing unit to an external device, and
A display unit that displays information indicating the determination result by the signal processing unit, and
A radiation detection device comprising.
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