JP6814613B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP6814613B2 JP6814613B2 JP2016229963A JP2016229963A JP6814613B2 JP 6814613 B2 JP6814613 B2 JP 6814613B2 JP 2016229963 A JP2016229963 A JP 2016229963A JP 2016229963 A JP2016229963 A JP 2016229963A JP 6814613 B2 JP6814613 B2 JP 6814613B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
被加工物である図1に示すウェーハWは、例えば、円盤状の外形を有する半導体ウェーハであり、ウェーハWの表面Wa上には、第一方向(図1においては、X軸方向)に伸長する複数の第一ストリートS1と、第一方向と水平面において直交する第二方向(図1においては、Y軸方向)に伸長する複数の第二ストリートS2とが配列されている。一本の第一ストリートS1とその隣に位置する別のもう一本の第一ストリートS1との間の距離(各第一ストリートS1の中心線間の距離)は、等間隔となっており、また、一本の第二ストリートS2とその隣に位置する別のもう一本の第二ストリートS2との間の距離(各第二ストリートS1の中心線間の距離)も、等間隔となっている。第一ストリートS1と第二ストリートS2とで区画された矩形状の各領域には、IC等のデバイスDがそれぞれ形成されている。
表面保護テープ貼着ステップを実施した後、表面保護テープTとウェーハWとを加熱する加熱ステップを実施する。表面保護テープTとウェーハWとの加熱は、例えば、図2に示す所定温度に加熱されたホットプレート5上で行われる。ホットプレート5の温度は、表面保護テープTの粘着層及び基材層の種類やテープ厚み等によって約50℃〜約90℃の範囲内において適宜設定され、本実施形態のように表面保護テープTがポリオレフィンからなる基材層を備えている場合においては、例えば約70℃に設定される。すなわち、ホットプレート5の温度は、熱による表面保護テープTの溶融及び表面保護テープTの熱収縮による外径の変化が生じない程度の温度に設定される。
加熱ステップを完了させた後、ウェーハWに対して透過性を有する波長のレーザビームを照射してウェーハWの内部に改質層を形成する改質層形成ステップを実施する。改質層形成ステップにおいて用いられる図3に示すレーザ加工装置1は、例えば、ウェーハWを吸引保持するチャックテーブル10と、チャックテーブル10に保持されたウェーハWに対してレーザビームを照射するレーザビーム照射手段11と、を少なくとも備えている。チャックテーブル10は、例えば、その外形が円形状であり、ポーラス部材等からなる保持面10a上でウェーハWを吸引保持する。チャックテーブル10は、鉛直方向(Z軸方向)の軸心周りに回転可能であるとともに、加工送り手段12によって、X軸方向に往復移動可能となっている。
改質層形成ステップが完了した後、ウェーハWの裏面Wbを研削してウェーハWを所定厚みへ薄化するとともに図6に示す第一改質層M11及び第一改質層M12並びに第二改質層M2を起点として、ウェーハWを図6に示す個々のチップCへと分割する研削ステップを実施する。
S2:第二ストリート D:デバイス M11、M12:第一改質層 M2:第二改質層
T:表面保護テープ Ta:表面保護テープの粘着面
5:ホットプレート
1:レーザ加工装置 10:チャックテーブル 10a:チャックテーブルの保持面
11:レーザビーム照射手段 110:レーザビーム発振器
111:集光器 111a:集光レンズ 119:ON/OFF切り替え手段
12:加工送り手段 14:アライメント手段 140:赤外線カメラ
2:研削装置 20:保持テーブル 20a:保持テーブルの保持面
23:Y軸方向送り手段
21:研削手段 210:回転軸 212:モータ 213:マウント
214:研削ホイール 214a:ホイール基台 214b:研削砥石
Claims (1)
- 交差する複数のストリートで区画された各領域にそれぞれデバイスが形成された表面を有し、該ストリートは第一方向に伸長する第一ストリートと、該第一方向に交差する第二方向に伸長する第二ストリートと、を備えるウェーハの加工方法であって、
ウェーハの該表面に表面保護テープを貼着する表面保護テープ貼着ステップと、
該表面保護テープ貼着ステップを実施した後、該表面保護テープとウェーハとを加熱する加熱ステップと、
該加熱ステップを実施した後、ウェーハに対して透過性を有する波長のレーザビームをウェーハの裏面へ該ストリートに沿って照射してウェーハの内部に該第一ストリートに沿った第一改質層と該第二ストリートに沿った第二改質層とをそれぞれ形成し、かつ、隣接するチップの該第一改質層が互いに該第二方向にずれて形成される改質層形成ステップと、
該改質層形成ステップを実施した後、ウェーハの裏面を研削してウェーハを所定厚みへと薄化するとともに該改質層を起点にウェーハを個々のチップへと分割する研削ステップと、を備えたウェーハの加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016229963A JP6814613B2 (ja) | 2016-11-28 | 2016-11-28 | ウェーハの加工方法 |
TW106134893A TWI733919B (zh) | 2016-11-28 | 2017-10-12 | 晶圓的加工方法 |
MYPI2017704272A MY190869A (en) | 2016-11-28 | 2017-11-09 | Wafer processing method |
CN201711103076.7A CN108122837B (zh) | 2016-11-28 | 2017-11-10 | 晶片的加工方法 |
US15/819,673 US10438898B2 (en) | 2016-11-28 | 2017-11-21 | Wafer processing method |
KR1020170157269A KR102332261B1 (ko) | 2016-11-28 | 2017-11-23 | 웨이퍼의 가공 방법 |
Applications Claiming Priority (1)
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JP2016229963A JP6814613B2 (ja) | 2016-11-28 | 2016-11-28 | ウェーハの加工方法 |
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JP2018088439A JP2018088439A (ja) | 2018-06-07 |
JP6814613B2 true JP6814613B2 (ja) | 2021-01-20 |
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US (1) | US10438898B2 (ja) |
JP (1) | JP6814613B2 (ja) |
KR (1) | KR102332261B1 (ja) |
CN (1) | CN108122837B (ja) |
MY (1) | MY190869A (ja) |
TW (1) | TWI733919B (ja) |
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JP6935168B2 (ja) * | 2016-02-12 | 2021-09-15 | 株式会社ディスコ | 加工装置 |
JP7175566B2 (ja) * | 2018-10-17 | 2022-11-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP7175567B2 (ja) * | 2018-10-17 | 2022-11-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP7175565B2 (ja) * | 2018-10-17 | 2022-11-21 | 株式会社ディスコ | ウェーハの加工方法 |
CN109599357B (zh) * | 2018-11-26 | 2020-12-18 | 合肥彩虹蓝光科技有限公司 | 一种半导体元件的切割方法及制造方法 |
DE102019211540A1 (de) * | 2019-08-01 | 2021-02-04 | Disco Corporation | Verfahren zum bearbeiten eines substrats |
JP7418139B2 (ja) | 2019-12-03 | 2024-01-19 | 株式会社ディスコ | 被加工物の加工方法 |
JP2022064089A (ja) * | 2020-10-13 | 2022-04-25 | 株式会社ディスコ | ウェーハの加工方法、及び、加工装置 |
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JPH06275714A (ja) * | 1993-03-22 | 1994-09-30 | Mitsubishi Electric Corp | 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法 |
CN100485902C (zh) | 2002-03-12 | 2009-05-06 | 浜松光子学株式会社 | 基板的分割方法 |
JP2005072248A (ja) * | 2003-08-25 | 2005-03-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP4665429B2 (ja) * | 2004-04-26 | 2011-04-06 | 富士電機システムズ株式会社 | 半導体素子の製造方法 |
JP5090897B2 (ja) * | 2007-12-28 | 2012-12-05 | 株式会社ディスコ | ウェーハの分割方法 |
JP5599342B2 (ja) * | 2011-02-23 | 2014-10-01 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP5930645B2 (ja) * | 2011-09-30 | 2016-06-08 | 株式会社ディスコ | ウエーハの加工方法 |
CN104221131B (zh) * | 2012-09-07 | 2016-12-21 | 富士电机株式会社 | 半导体元件的制造方法 |
JP6013859B2 (ja) * | 2012-10-01 | 2016-10-25 | 株式会社ディスコ | ウェーハの加工方法 |
JP6101468B2 (ja) * | 2012-10-09 | 2017-03-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP6178077B2 (ja) * | 2013-01-23 | 2017-08-09 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015201585A (ja) * | 2014-04-10 | 2015-11-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP6308919B2 (ja) * | 2014-09-03 | 2018-04-11 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016171214A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社ディスコ | 単結晶基板の加工方法 |
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- 2017-10-12 TW TW106134893A patent/TWI733919B/zh active
- 2017-11-09 MY MYPI2017704272A patent/MY190869A/en unknown
- 2017-11-10 CN CN201711103076.7A patent/CN108122837B/zh active Active
- 2017-11-21 US US15/819,673 patent/US10438898B2/en active Active
- 2017-11-23 KR KR1020170157269A patent/KR102332261B1/ko active IP Right Grant
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CN108122837B (zh) | 2021-09-14 |
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MY190869A (en) | 2022-05-13 |
KR102332261B1 (ko) | 2021-11-26 |
TW201834030A (zh) | 2018-09-16 |
US10438898B2 (en) | 2019-10-08 |
US20180151508A1 (en) | 2018-05-31 |
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KR20180061011A (ko) | 2018-06-07 |
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