JP6813138B1 - 光半導体素子 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 134
- 230000003287 optical effect Effects 0.000 title claims description 119
- 239000010410 layer Substances 0.000 claims abstract description 152
- 229910000679 solder Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000012792 core layer Substances 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 30
- 239000011347 resin Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 239000012212 insulator Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000007480 spreading Effects 0.000 description 12
- 238000003892 spreading Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
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- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
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- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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Abstract
Description
実施の形態1に係る光半導体素子の構成を説明する。図1は実施の形態1に係る光半導体素子10の斜視図である。図1中にx、y、z軸の方向を示している。図1では第1の電極20の厚みの図示を省いた。これ以降の斜視図でも上面にある電極の厚みの図示は省いている。図2(a)は光半導体素子10を平面視で見た上面図である。ここで平面視とはz軸の上方から見ることをいう。図2(b)は、図2(a)のA−Aにおける光半導体素子10の断面図である。
実施の形態2に係る光半導体素子について説明する。実施の形態2に係る光半導体素子は、リッジ上の電極がT型形状である点が実施の形態1と異なる。ここでは主に実施の形態1との違いを記載する。
実施の形態3に係る光半導体素子について説明する。実施の形態3に係る光半導体素子は、片当たりを防止するための構造体が形成されている点が実施の形態1と異なる。ここでは主に実施の形態1との違いを記載する。
実施の形態4に係る光半導体素子について説明する。実施の形態4に係る光半導体素子は、片当たりを防止するための構造体が、凹部に形成された凹部電極である点が実施の形態3と異なる。ここでは主に実施の形態3との違いを記載する。
実施の形態5に係る光半導体素子の構成を説明する。図14は実施の形態5に係る光半導体素子70の斜視図である。図15(a)は光半導体素子70の上面図である。図15(b)は、図15(a)のD−Dにおける光半導体素子70の断面図である。図15(c)は、図15(a)のE−Eにおける光半導体素子70の断面図である。光半導体素子70はレーザ部84と変調器部85が集積されている。変調器部85自身はレーザ光を発光しないため、実施の形態1の光半導体素子10とは機能が異なるが、構造としては実施の形態1の光半導体素子10に相当している。光半導体素子70は、この変調器部85にレーザ部84が追加された形になっている。
実施の形態6に係る光半導体素子について説明する。実施の形態6に係る光半導体素子は、広がり部が変調器部まで延びており、この部分が構造体として機能する点が実施の形態5と異なる。ここでは主に実施の形態5との違いを記載する。
実施の形態7に係る光半導体素子について説明する。実施の形態7に係る光半導体素子は、リッジ溝の中に樹脂膜が形成されていない点が実施の形態5と異なる。ここでは主にこの違いを記載する。
11,71 基板
12,72 第1のリッジ
13,73 第1の第1導電型クラッド層
14,74 第1のコア層
15,75 第1の第2導電型クラッド層
16,76 第1のコンタクト層
18,78,122 第1のリッジ溝
20,20a,20,80,20b 第1の電極
21,81 第1の半田層
42,42b 下部電極
43,43b 上部電極
61 凹部
62 凹部電極
63 凹部半田層
64 底面
65 下側コンタクト層
86 第2のリッジと
87 第2の第1導電型クラッド層
88 第2のコア層
89 第2の第2導電型クラッド層
90 第2のコンタクト層
91,126 第2のリッジ溝
92,104,127,104b 第2の電極
93,106 第2の半田層
94,107,128,107b 広がり部
Claims (7)
- 基板と、
前記基板の上に形成され、下から順に第1の第1導電型クラッド層、第1のコア層、第1の第2導電型クラッド層、第1のコンタクト層を有し、両脇に第1のリッジ溝が配置された第1のリッジと、
前記第1のリッジの上で前記第1のコンタクト層とコンタクトし、前記第1のリッジ溝まで広がらず、第1の半田層を含む第1の電極と、
前記基板の上に形成され、前記第1のリッジに連なり、下から順に第2の第1導電型クラッド層、第2のコア層、第2の第2導電型クラッド層、第2のコンタクト層を有し、両脇に第2のリッジ溝が配置された第2のリッジと、
前記第2のリッジの上で前記第2のコンタクト層とコンタクトし、前記第2のリッジ溝を越えて広がる広がり部を有し、第2の半田層を含む第2の電極と、
を備え、
前記第2のコア層はレーザ光を発光する活性層であり、
前記第1のコア層は前記第2のコア層からのレーザ光を変調する吸収層である光半導体素子。 - 前記第2の半田層はAuSnでできており、
前記第2の半田層の上にはAuでできた層がある請求項1に記載の光半導体素子。 - 前記第1のリッジから前記第1のリッジ溝より離れた領域に、前記第1の電極と上面の高さが等しい構造体が形成された請求項1〜2のいずれか1項に記載の光半導体素子。
- 前記基板と前記第1のリッジの間に、前記第1の第1導電型クラッド層と電気的に接続された下側コンタクト層が形成され、
前記第1のリッジから前記第1のリッジ溝より離れた領域に、底面が前記下側コンタクト層と接するように掘られた凹部が形成され、
前記凹部に前記第1の電極と上面の高さが等しく、前記底面を通じて前記第1の第1導電型クラッド層と電気的に接続され、凹部半田層を含む凹部電極が形成され、
前記構造体は前記凹部電極である請求項3に記載の光半導体素子。 - 前記凹部半田層はAuSnでできており、
前記凹部半田層の上にはAuでできた層がある請求項4に記載の光半導体素子。 - 前記第1のリッジから前記第1のリッジ溝より離れた領域に、前記第1の電極と上面の高さが等しい構造体が形成され、
前記構造体は、前記広がり部が延びたものである請求項1または2に記載の光半導体素子。 - 前記第1のリッジ溝の中は空洞である請求項1〜6のいずれか1項に記載の光半導体素子。
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JP2012209489A (ja) * | 2011-03-30 | 2012-10-25 | Fujitsu Ltd | 光半導体素子及びその製造方法 |
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