JP6785551B2 - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JP6785551B2 JP6785551B2 JP2015251083A JP2015251083A JP6785551B2 JP 6785551 B2 JP6785551 B2 JP 6785551B2 JP 2015251083 A JP2015251083 A JP 2015251083A JP 2015251083 A JP2015251083 A JP 2015251083A JP 6785551 B2 JP6785551 B2 JP 6785551B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Surface Treatment Of Glass (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
基材の少なくとも片面に、感光性樹脂組成物を含有してなる感光性樹脂層を形成し、感光性樹脂層を露光後現像し、感光性樹脂層を加熱した後、フッ酸又はフッ化アンモニウムの濃度が15質量%以上の、フッ酸又はフッ化アンモニウムを含有したエッチング液によってエッチング処理し、
感光性樹脂組成物が、少なくとも(A)酸変性エポキシアクリレート、(B)光重合開始剤、(C)ブロック化イソシアネート化合物、(D)フィラー、を含有してなるエッチング方法。
表1〜3に示す各成分を混合し、感光性樹脂組成物を得た。なお、表1〜3における各成分配合量の単位は、質量部を表す。得られた塗工液を、ワイヤーバーを用いて、ポリエチレンテレフタレート(PET)フィルム(商品名:R310、25μm厚、三菱樹脂社製)上に塗工し、100℃で8分間乾燥し、溶剤成分をとばし、PETフィルムの片面上に実施例1〜13、比較例1〜3の感光性樹脂組成物からなる感光性樹脂層(乾燥膜厚:60μm)を得た。
(A−1)酸変性エポキシアクリレートKAYARAD(登録商標)UXE−3024(商品名、日本化薬社製、濃度65質量%、エポキシ樹脂(a):複合型)
(A−2)酸変性エポキシアクリレートKAYARAD(登録商標)CCR−1235(商品名、日本化薬社製、濃度62質量%、エポキシ樹脂(a):クレゾールノボラック型)
(A−3)酸変性エポキシアクリレートKAYARAD(登録商標)ZAR−1035(商品名、日本化薬社製、濃度65質量%、エポキシ樹脂(a):ビスフェノールA型)
(A−4)酸変性エポキシアクリレートKAYARAD(登録商標)ZFR−1401H(商品名、日本化薬社製、濃度62質量%、エポキシ樹脂(a):ビスフェノールF型)
(A−5)エポキシ樹脂(a)がビスフェノールA型エポキシ樹脂(商品名:JER828、三菱化学社製)であり、化合物(b)がコハク酸であり、エポキシ樹脂(a):化合物(b):アクリル酸のモル比が1:2:2で反応させて得られた酸変性エポキシアクリレート
(A−6)エポキシ樹脂(a)がビスフェノールA型エポキシ化合物(商品名:JER828、三菱化学社製)であり、化合物(b)がフタル酸であり、エポキシ樹脂(a):化合物(b):アクリル酸のモル比が1:2:2で反応させて得られた酸変性エポキシアクリレート
(B−1)2−(2′−クロロフェニル)−4,5−ジフェニルイミダゾール二量体
(B−2)4,4′−ビス(ジエチルアミノ)ベンゾフェノン
(C−1)スミジュール(SUMIDUR、登録商標)BL3175(商品名、住化コベストロウレタン社製、ベース:1,6−ヘキサメチレンジイソシアネート、ブロック剤:メチルエチルケトキシム、濃度75質量%)
(C−2)デスモジュール(DESMODUR、登録商標)BL1100(商品名、住化コベストロウレタン社製、ベース:2,6−トリレンジイソシアネート、ブロック剤:ε−カプロラクタム)
(C−3)ディスモサーム(DESMOTHERM、登録商標)2170(商品名、住化コベストロウレタン社製、ベース:4,4′−ジフェニルメタンジイソシアネート、ブロック剤:活性メチレン、濃度70質量%)
(D−1)沈降性硫酸バリウム #100(堺化学工業社製)
(D−2)タルク(商品名:LMS−200、富士タルク工業社製、平均粒子径5μm)
(D−3)シリカ(商品名:FB−3SDC、電気化学工業社製)
(D−4)タルク(商品名:SG95、日本タルク社製、平均粒子径2.5μm)
(E−1)成分;メチルメタクリレート/n−ブチルアクリレート/メタクリル酸を質量比58/15/27で共重合させた共重合樹脂(質量平均分子量70000)
(F−1)2,2′−ビス−(4−メタクリロキシペンタエトキシフェニル)プロパン(商品名:BPE−500、新中村化学工業社製)
(F−2)トリメチロールプロパントリアクリレート(商品名:TMP−A、共栄社化学社製)
Claims (5)
- フッ酸又はフッ化アンモニウムを含有したエッチング液によってエッチング処理するエッチング方法であって、
基材の少なくとも片面に、感光性樹脂組成物を含有してなる感光性樹脂層を形成し、感光性樹脂層を露光後現像し、感光性樹脂層を加熱した後、フッ酸又はフッ化アンモニウムの濃度が15質量%以上の、フッ酸又はフッ化アンモニウムを含有したエッチング液によってエッチング処理し、
感光性樹脂組成物が、少なくとも(A)酸変性エポキシアクリレート、(B)光重合開始剤、(C)ブロック化イソシアネート化合物、(D)フィラー、を含有してなるエッチング方法。 - (A)酸変性エポキシアクリレートが、エポキシ樹脂(a)と、アクリル酸及びメタクリル酸の群から選ばれる少なくとも1種の化合物と、カルボン酸含有化合物及びカルボン酸含有化合物の無水物の群から選ばれる少なくとも1種の化合物(b)とを、少なくとも反応させてなる化合物であり、エポキシ樹脂(a)がビスフェノールA型である請求項1記載のエッチング方法。
- (A)酸変性エポキシアクリレートが、エポキシ樹脂(a)と、アクリル酸及びメタクリル酸の群から選ばれる少なくとも1種の化合物と、カルボン酸含有化合物及びカルボン酸含有化合物の無水物の群から選ばれる少なくとも1種の化合物(b)とを、少なくとも反応させてなる化合物であり、化合物(b)がコハク酸及び無水コハク酸の群から選ばれる少なくとも1種である請求項1又は2記載のエッチング方法。
- (C)ブロック化イソシアネート化合物が、メチルエチルケトキシムによってブロック化された1,6−ヘキサメチレンジイソシアネートである請求項1〜3のいずれか記載のエッチング方法。
- (D)フィラーがタルクである請求項1〜4のいずれか記載のエッチング方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/556,047 US10990010B2 (en) | 2015-04-03 | 2016-03-16 | Photosensitive resin composition and etching process |
PCT/JP2016/058318 WO2016158416A1 (ja) | 2015-04-03 | 2016-03-16 | 感光性樹脂組成物及びエッチング方法 |
CN201680017653.8A CN107430339A (zh) | 2015-04-03 | 2016-03-16 | 感光性树脂组合物和蚀刻方法 |
EP16772299.0A EP3279732B1 (en) | 2015-04-03 | 2016-03-16 | Etching method |
CN202311391186.3A CN117369212A (zh) | 2015-04-03 | 2016-03-16 | 感光性树脂组合物和蚀刻方法 |
KR1020177026444A KR102525261B1 (ko) | 2015-04-03 | 2016-03-16 | 감광성 수지 조성물 및 에칭 방법 |
TW105110559A TWI747820B (zh) | 2015-04-03 | 2016-04-01 | 感光性樹脂組成物及蝕刻方法 |
Applications Claiming Priority (2)
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JP2015076433 | 2015-04-03 | ||
JP2015076433 | 2015-04-03 |
Publications (3)
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JP2016197226A JP2016197226A (ja) | 2016-11-24 |
JP2016197226A5 JP2016197226A5 (ja) | 2018-06-14 |
JP6785551B2 true JP6785551B2 (ja) | 2020-11-18 |
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US (1) | US10990010B2 (ja) |
EP (1) | EP3279732B1 (ja) |
JP (1) | JP6785551B2 (ja) |
KR (1) | KR102525261B1 (ja) |
CN (1) | CN107430339A (ja) |
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CN109541889B (zh) | 2018-12-19 | 2020-06-26 | 江苏艾森半导体材料股份有限公司 | 用于半导体封装工艺的负性光刻胶 |
JP7432415B2 (ja) | 2020-03-25 | 2024-02-16 | 三菱製紙株式会社 | エッチング方法 |
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JP2001209175A (ja) * | 1999-11-16 | 2001-08-03 | Mitsubishi Chemicals Corp | 感光性組成物及びその硬化物 |
US6677182B2 (en) * | 2000-04-20 | 2004-01-13 | Digirad Corporation | Technique for suppression of edge current in semiconductor devices |
JP2005164877A (ja) | 2003-12-02 | 2005-06-23 | Nippon Paint Co Ltd | 光硬化性レジスト樹脂組成物及びガラス基板の製造方法 |
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JP4969154B2 (ja) | 2006-05-24 | 2012-07-04 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物及びガラスパターンの形成方法 |
JP5201397B2 (ja) * | 2008-04-25 | 2013-06-05 | 日立化成株式会社 | 感光性樹脂組成物及びこれを用いた感光性永久レジスト、感光性フィルム、レジストパターンの形成方法 |
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JP5620656B2 (ja) * | 2009-08-19 | 2014-11-05 | 太陽ホールディングス株式会社 | 光硬化性樹脂組成物 |
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KR101878802B1 (ko) | 2011-04-25 | 2018-07-16 | 가부시키가이샤 가네카 | 신규한 감광성 수지 조성물 및 그 이용 |
TWI537678B (zh) * | 2011-09-30 | 2016-06-11 | Taiyo Ink Mfg Co Ltd | A photosensitive resin composition, a hardened film thereof, and a printed wiring board |
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JP5731961B2 (ja) * | 2011-12-05 | 2015-06-10 | 三菱製紙株式会社 | エッチング方法 |
CN104520768A (zh) * | 2012-08-06 | 2015-04-15 | 日立化成株式会社 | 永久掩模抗蚀剂用感光性树脂组合物、感光性元件、抗蚀剂图案的形成方法和印刷配线板的制造方法 |
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- 2016-03-16 US US15/556,047 patent/US10990010B2/en active Active
- 2016-03-16 CN CN201680017653.8A patent/CN107430339A/zh active Pending
- 2016-03-16 EP EP16772299.0A patent/EP3279732B1/en active Active
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EP3279732A1 (en) | 2018-02-07 |
CN107430339A (zh) | 2017-12-01 |
US20180046079A1 (en) | 2018-02-15 |
JP2016197226A (ja) | 2016-11-24 |
US10990010B2 (en) | 2021-04-27 |
KR20170134384A (ko) | 2017-12-06 |
EP3279732A4 (en) | 2018-09-19 |
EP3279732B1 (en) | 2020-09-09 |
KR102525261B1 (ko) | 2023-04-24 |
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