JP6785477B2 - 太陽電池セルおよび太陽電池セルの製造方法 - Google Patents
太陽電池セルおよび太陽電池セルの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 185
- 238000002161 passivation Methods 0.000 claims description 107
- 239000002019 doping agent Substances 0.000 claims description 102
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 96
- 238000009792 diffusion process Methods 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 341
- 235000012431 wafers Nutrition 0.000 description 146
- 210000004027 cell Anatomy 0.000 description 61
- 239000010408 film Substances 0.000 description 45
- 125000004429 atom Chemical group 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
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- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
(1)結晶性シリコンウェーハ11zの一方の主面S1上に、酸化シリコン、炭化シリコン、または窒化シリコンを主成分として構成されるパッシベーション層12zを形成する工程。
(2)パッシベーション層12z上に実質的に真正なi型シリコン層13zを形成する工程。
(3)パッシベーション層12z、i型シリコン層13z、および結晶性シリコンウェーハ11zにn型ドーパントを熱拡散させて、当該ウェーハの各主面およびその近傍に他の領域よりn型ドーパントの濃度が高いn+層20を形成すると共に、i型シリコン層13zをn型結晶性シリコン層13とする工程。
(4)n+層20が形成された結晶性シリコンウェーハ11z(n型結晶性シリコンウェーハ11)の他方の主面S2側にp型非晶質シリコン層17を形成する工程。
Claims (11)
- 結晶性シリコンウェーハの一方の主面上に、酸化シリコン、炭化シリコン、または窒化シリコンを主成分として構成される第1のパッシベーション層を形成する工程と、
前記パッシベーション層上にi型シリコン層を形成する工程と、
前記パッシベーション層、前記i型シリコン層、および前記結晶性シリコンウェーハにn型ドーパントを熱拡散させて、当該ウェーハの各主面およびその近傍に他の領域より前記n型ドーパントの濃度が高いn+層を形成すると共に、前記i型シリコン層をn型結晶性シリコン層とする工程と、
前記n+層が形成された前記結晶性シリコンウェーハの他方の主面側にp型非晶質シリコン層を形成する工程と、
を備える、太陽電池セルの製造方法。 - 前記n型ドーパントの拡散を抑制する拡散調整膜を前記結晶性シリコンウェーハの他方の主面上に形成した後、当該ウェーハに前記n型ドーパントを熱拡散させ、前記p型非晶質シリコン層を形成する前に前記拡散調整膜を除去する、請求項1に記載の太陽電池セルの製造方法。
- 前記拡散調整膜は、酸化シリコンを主成分として構成される、請求項2に記載の太陽電池セルの製造方法。
- 前記結晶性シリコンウェーハの各主面およびその近傍に形成される前記n+層の前記n型ドーパントの濃度が1×1018〜1×1020atoms/cm3となるように、前記n型ドーパントを熱拡散させる、請求項1〜3のいずれか1項に記載の太陽電池セルの製造方法。
- 前記n+層が形成された前記結晶性シリコンウェーハと前記p型非晶質シリコン層との間に第2のパッシベーション層を形成する工程をさらに備え、
前記第2のパッシベーション層は、実質的に真性な非晶質シリコンか、または前記p型非晶質シリコン層よりp型ドーパント濃度が低い非晶質シリコンを主成分として構成される、請求項1〜4のいずれか1項に記載の太陽電池セルの製造方法。 - 前記n型結晶性シリコン層は、前記第1のパッシベーション層上に非晶質の前記i型シリコン層を形成した後、当該シリコン層を結晶化して形成される、請求項1〜5のいずれか1項に記載の太陽電池セルの製造方法。
- 前記n+層を形成すると共に、前記i型シリコン層をn型結晶性シリコン層とする工程は、結晶性シリコンウェーハの他方の主面を露出させた状態で前記n型ドーパントを熱拡散させる、請求項1に記載の太陽電池セルの製造方法。
- ウェーハの各主面およびその近傍に他の領域よりn型ドーパントの濃度が高いn+層を有するn型結晶性シリコンウェーハと、
前記n型結晶性シリコンウェーハの一方の主面である受光面上に形成され、酸化シリコン、炭化シリコン、または窒化シリコンを主成分として構成される受光面側パッシベーション層と、
前記受光面側パッシベーション層上に形成されたn型結晶性シリコン層と、
前記n型結晶性シリコンウェーハの他方の主面である裏面側に形成されたp型非晶質シリコン層と、
を備え、
前記受光面側パッシベーション層は、前記n型ドーパントを含み、
前記受光面側パッシベーション層および前記n型結晶性シリコン層における前記n型ドーパントの濃度は、前記n型結晶性シリコンウェーハの受光面側に形成された前記n+層における前記n型ドーパントの濃度以上である、太陽電池セル。 - 前記ウェーハの各主面およびその近傍に形成される前記n+層における前記n型ドーパントの濃度は、1×1018〜1×1020atoms/cm3である、請求項8に記載の太陽電池セル。
- 前記n型結晶性シリコンウェーハの受光面側に形成された前記n+層における前記n型ドーパントの濃度は、当該ウェーハの裏面側に形成された前記n+層における前記n型ドーパントの濃度以下である、請求項8または9に記載の太陽電池セル。
- 前記n型結晶性シリコンウェーハと前記p型非晶質シリコン層との間に形成された裏面側パッシベーション層をさらに備え、
前記裏面側パッシベーション層は、実質的に真性な非晶質シリコンか、または前記p型非晶質シリコン層よりp型ドーパントの濃度が低い非晶質シリコンを主成分として構成される、請求項8〜10のいずれか1項に記載の太陽電池セル。
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