JP6778591B2 - 超純水製造方法及び超純水製造システム - Google Patents
超純水製造方法及び超純水製造システム Download PDFInfo
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- JP6778591B2 JP6778591B2 JP2016229194A JP2016229194A JP6778591B2 JP 6778591 B2 JP6778591 B2 JP 6778591B2 JP 2016229194 A JP2016229194 A JP 2016229194A JP 2016229194 A JP2016229194 A JP 2016229194A JP 6778591 B2 JP6778591 B2 JP 6778591B2
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- reverse osmosis
- osmosis membrane
- chlorine
- water
- membrane device
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Description
活性炭装置23:三菱化学カルゴン(株)社製、ダイヤホープM006LFA
耐塩素性逆浸透膜装置21:東レ株式会社製、RE8040−CE、1本を使用。水回収率75%、耐塩素性逆浸透膜装置21の透過水圧力により第1のポンプP1をフィードバック制御して運転圧力1.2MPaの略一定にて運転した。
非耐塩素性逆浸透膜装置22:東レ株式会社製、TM720、1本を使用。水回収率75%。非耐塩素性逆浸透膜装置22の透過水圧力により第2のポンプP2をフィードバック制御して運転圧力1.2MPaの略一定にて運転した。
Claims (7)
- 2段逆浸透膜装置を備える超純水製造システムにおいて、
前記2段逆浸透膜装置の前段の逆浸透膜装置が耐塩素性逆浸透膜装置であり、
前記2段逆浸透膜装置の後段の逆浸透膜装置が非耐塩素性逆浸透膜装置であり、
前記耐塩素性逆浸透膜装置の被処理水中の遊離塩素濃度(Cl換算)と遊離臭素濃度(Br換算)が合計で、0.01mg/L以上0.1mg/L未満であることを特徴とする超純水製造方法。 - 前記超純水製造システムは、活性炭装置を備え、
前記活性炭装置の処理水を前記2段逆浸透膜装置の被処理水とし、
前記活性炭装置における流速を調整して、前記遊離塩素及び遊離臭素の合計濃度の被処理水を生成することを特徴とする請求項1記載の超純水製造方法。 - 前記活性炭装置における流速は、空間速度で20h−1以上50h−1以下であることを特徴とする請求項2記載の超純水製造方法。
- 前記2段逆浸透膜装置の透過水を電気脱イオン装置で処理する工程を有することを特徴とする請求項1乃至3のいずれか1項記載の超純水製造方法。
- 前記耐塩素性逆浸透膜装置の透過水中の遊離塩素及び遊離臭素の合計濃度が0.005mg/L以上0.05mg/L以下であることを特徴とする請求項1乃至4のいずれか1項記載の超純水製造方法。
- 2段逆浸透膜装置を備える超純水製造システムであって、
前記2段逆浸透膜装置の前段の逆浸透膜装置が耐塩素性逆浸透膜装置であり、
前記2段逆浸透膜装置の後段の逆浸透膜装置が非耐塩素性逆浸透膜装置であり、
前記耐塩素性逆浸透膜装置の被処理水中の遊離塩素濃度(Cl換算)と遊離臭素濃度(Br換算)が合計で0.01mg/L以上0.1mg/L未満であることを特徴とする超純水製造システム。 - 前記2段逆浸透膜装置の前段に活性炭装置を備え、
前記2段逆浸透膜装置の後段に電気脱イオン装置を備えることを特徴とする請求項6記載の超純水製造システム。
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CN201780072434.4A CN110291045A (zh) | 2016-11-25 | 2017-11-08 | 超纯水制造方法及超纯水制造*** |
PCT/JP2017/040274 WO2018096929A1 (ja) | 2016-11-25 | 2017-11-08 | 超純水製造方法及び超純水製造システム |
KR1020197014169A KR102432353B1 (ko) | 2016-11-25 | 2017-11-08 | 초순수 제조 방법 및 초순수 제조 시스템 |
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