JP6771502B2 - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device Download PDF

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JP6771502B2
JP6771502B2 JP2018048939A JP2018048939A JP6771502B2 JP 6771502 B2 JP6771502 B2 JP 6771502B2 JP 2018048939 A JP2018048939 A JP 2018048939A JP 2018048939 A JP2018048939 A JP 2018048939A JP 6771502 B2 JP6771502 B2 JP 6771502B2
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lead frame
semiconductor element
resin
semiconductor device
mold resin
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JP2019161147A (en
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石井　隆一
隆一 石井
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本願は、モールド樹脂で半導体素子を封止してなる樹脂封止型半導体装置に関するものである。 The present application relates to a resin-sealed semiconductor device in which a semiconductor element is sealed with a mold resin.

図４は、一般的なモールド樹脂封止型パワー半導体装置の平面図（ａ）と断面図（ｂ）を示した構造模式図である。図４において、半導体素子１とインナーリード２は横断スリット７によって電気的に絶縁を保たれ、かつ横断スリット７の近傍には釣り部５を設けたリードフレーム３に半田付けされ、全体をモールド樹脂６で封止されている。半導体素子１は冷却が不可欠であり、リードフレーム３は外部配線部４と釣り部５を含めヒートシンク１０との絶縁性が必要であるため、絶縁シート９を介してヒートシンク１０へ押えバネ１１にて固定されている。 FIG. 4 is a schematic structural diagram showing a plan view (a) and a cross-sectional view (b) of a general molded resin sealed power semiconductor device. In FIG. 4, the semiconductor element 1 and the inner lead 2 are electrically insulated by the cross slit 7, and are soldered to a lead frame 3 provided with a fishing portion 5 in the vicinity of the cross slit 7, and the whole is made of a mold resin. It is sealed with 6. Cooling is indispensable for the semiconductor element 1, and the lead frame 3 needs to be insulated from the heat sink 10 including the external wiring portion 4 and the fishing portion 5, so that the heat sink 10 is pressed by the pressing spring 11 via the insulating sheet 9. It is fixed.

半導体素子１とインナーリード２はリードフレーム３にリフロー半田付けされるが、片面実装であり、リードフレーム３の剛性が低い場合は熱収縮による変形が大きく発生する。モールド樹脂６による成形時にリードフレーム３は成形金型内でフラットに矯正されるので、矯正による大きな応力が半導体素子１と半田に発生し、寿命が悪化してしまう。
従来のモールド樹脂封止型パワー半導体装置においては、外部配線部４と釣り部５を保持してリードフレーム３の剛性を確保する構造にされており、半田付けによる半導体素子１近傍の変形を防止し、成形時に発生する応力を無くし、寿命劣化が防止されている。 The semiconductor element 1 and the inner lead 2 are reflow soldered to the lead frame 3, but they are mounted on one side, and if the rigidity of the lead frame 3 is low, deformation due to heat shrinkage occurs significantly. Since the lead frame 3 is flattened in the molding die during molding with the mold resin 6, a large stress due to the straightening is generated in the semiconductor element 1 and the solder, and the life is deteriorated.
The conventional molded resin-sealed power semiconductor device has a structure that holds the external wiring portion 4 and the fishing portion 5 to secure the rigidity of the lead frame 3, and prevents deformation in the vicinity of the semiconductor element 1 due to soldering. However, the stress generated during molding is eliminated, and the deterioration of life is prevented.

特許文献１に示す半導体装置においては、隣接する半導体パッケージ単位のモールドパッケージ部を相互に対向させ、リードフレームの半導体パッケージ単位間のスリットにブリッジが設けられている。成形時の樹脂の圧力によるリードフレームの変形をブリッジにより防止することで変形のないパワー半導体装置の製造を可能とし、高信頼性が図られている。 In the semiconductor device shown in Patent Document 1, the mold package portions of adjacent semiconductor package units are opposed to each other, and a bridge is provided in the slit between the semiconductor package units of the lead frame. By preventing deformation of the lead frame due to resin pressure during molding with a bridge, it is possible to manufacture a power semiconductor device without deformation, and high reliability is achieved.

特許文献２に示す樹脂封止型半導体装置においては、半導体チップの裏面にヒートスプレッダを接着剤で接着し、そのヒートスプレッダの上にヒートシンクを装着したものが開示されている。 In the resin-sealed semiconductor device shown in Patent Document 2, a heat spreader is adhered to the back surface of a semiconductor chip with an adhesive, and a heat sink is mounted on the heat spreader.

特開平６−１９６６０９号公報（段落００２１、図１）Japanese Unexamined Patent Publication No. 6-196609 (paragraph 0021, FIG. 1) 特開平９−２３７８０７号公報（段落００１６、図５）Japanese Unexamined Patent Publication No. 9-237807 (paragraph 0016, FIG. 5)

通常、パワー半導体装置の半導体素子１はトランジスタが採用されており、大電流が通電できるようリードフレーム３はＰ側、Ｎ側、出力側の３つへ分割される。リードフレーム３は銅材をプレス加工して製作されており、Ｐ側、Ｎ側、出力側のリードフレーム３はそれぞれに絶縁が必要なため、絶縁のための溝を有するスリット幅はリードフレーム３の厚み以上の幅が必要であり、リードフレーム３の端から端まで直線的に分断する横断スリット７を有する形状となる。 Normally, a transistor is adopted as the semiconductor element 1 of the power semiconductor device, and the lead frame 3 is divided into three, a P side, an N side, and an output side so that a large current can be energized. The lead frame 3 is manufactured by pressing a copper material, and since the lead frame 3 on the P side, the N side, and the output side each needs to be insulated, the slit width having a groove for insulation is the lead frame 3. A width equal to or larger than the thickness of the above is required, and the shape has a cross slit 7 that linearly divides the lead frame 3 from one end to the other.

モールド樹脂６による成形時にリードフレーム３は成形金型内でフラットに矯正されるが、モールド樹脂６の成形収縮、モールド樹脂６とリードフレーム３の線膨張係数の差により、モールド樹脂６に変形が発生する。更に、リードフレーム３の横断スリット７部分は、スリット幅もリードフレーム３の厚みより広く、剛性が他の箇所より低くなってしまうので形状的に変形の起点になりやすく、大きな変形が発生してしまう欠点があった。 When molding with the mold resin 6, the lead frame 3 is straightened flat in the molding die, but the mold resin 6 is deformed due to the molding shrinkage of the mold resin 6 and the difference in the linear expansion coefficient between the mold resin 6 and the lead frame 3. appear. Further, the cross-slit 7 portion of the lead frame 3 has a slit width wider than the thickness of the lead frame 3 and a lower rigidity than other portions, so that it tends to be a starting point of deformation in shape, and a large deformation occurs. There was a drawback that it would end up.

さらに半導体素子１は冷却が必須であるので、ヒートシンク１０へ密着させるためにモールド樹脂６を新規開発して線膨張係数と強度を調整し変形量を抑えるか、変形を矯正できる強い荷重の押えバネ１１が必要となるため、構造が複雑となり、装置全体でのレイアウトの制約が発生し、低コスト化ができないという欠点があった。
また、横断スリット７に、特許文献１に記載されたようなブリッジを設ける場合は、Ｐ側、Ｎ側、出力側のリードフレームはそれぞれ絶縁できる構造が成立しないため採用できないという欠点があった。 Furthermore, since the semiconductor element 1 must be cooled, a mold resin 6 is newly developed to bring it into close contact with the heat sink 10, and the linear expansion coefficient and strength are adjusted to suppress the amount of deformation, or a strong load holding spring that can correct the deformation. Since the number 11 is required, the structure is complicated, the layout of the entire device is restricted, and the cost cannot be reduced.
Further, when the cross slit 7 is provided with a bridge as described in Patent Document 1, there is a drawback that the lead frames on the P side, the N side, and the output side cannot be adopted because a structure capable of insulating them is not established.

本願は、上記のような問題点を解決するためになされたものであり、小型で安価な樹脂封止型半導体装置を提供することを目的とするものである。 The present application has been made to solve the above-mentioned problems, and an object of the present application is to provide a small and inexpensive resin-sealed semiconductor device.

本願に開示される樹脂封止型半導体装置は、スイッチング動作により電力変換を行う半導体素子と、半導体素子を実装し電気的に絶縁する横断スリットを有するリードフレームと、半導体素子とリードフレームを電気的に接続するインナーリードと、半導体素子とリードフレームとインナーリードを被覆して筐体を形成するモールド樹脂と、リードフレームの半導体素子の実装側とは反対側の面に絶縁シートを介して設けられたヒートシンクを備え、リードフレームの対向する端から端まで一直線で分断する横断スリットは途中に２カ所以上の直角に屈曲した折曲げ部を設けると共に、リードフレームは半導体素子の実装部分の板厚を他の箇所よりも大きくしたものである。

The resin-sealed semiconductor device disclosed in the present application includes a semiconductor element that performs power conversion by a switching operation, a lead frame that mounts the semiconductor element and has a transverse slit that electrically insulates the semiconductor element and the lead frame electrically. The inner lead connected to the semiconductor element, the mold resin that covers the semiconductor element, the lead frame, and the inner lead to form a housing, and the lead frame provided on the surface of the lead frame opposite to the mounting side of the semiconductor element via an insulating sheet. The cross-sectional slit that divides the lead frame in a straight line from the opposite end to the end is provided with two or more bent parts bent at right angles in the middle, and the lead frame has the thickness of the mounting part of the semiconductor element. It is larger than the other parts.

本願に開示される樹脂封止型半導体装置によれば、リードフレームの横断スリットに絶縁を確保したまま折曲げ部を２カ所以上設けて、剛性の弱い箇所が一直線にならない構造とすることにより、形状的に変形の起点となる低剛性部分を無くしてモールド樹脂の変形量を抑制し、ヒートシンクとの固定を簡易に行える小型で安価な樹脂封止型半導体装置が得られる。 According to the resin-sealed semiconductor device disclosed in the present application, two or more bent portions are provided in the transverse slits of the lead frame while ensuring insulation so that the weakly rigid portions do not become a straight line. A compact and inexpensive resin-sealed semiconductor device can be obtained by eliminating the low-rigidity portion that is the starting point of deformation in terms of shape, suppressing the amount of deformation of the mold resin, and easily fixing the mold resin to the heat sink.

実施の形態１による樹脂封止型半導体装置の平面図と断面図を示した構造模式図である。It is a structural schematic view which showed the plan view and the sectional view of the resin-sealed semiconductor device according to Embodiment 1. FIG. 実施の形態２による樹脂封止型半導体装置の平面図と断面図を示した構造模式図である。It is a structural schematic view which showed the plan view and the sectional view of the resin-sealed semiconductor device according to Embodiment 2. 実施の形態３による樹脂封止型半導体装置の平面図と断面図を示した構造模式図である。It is a structural schematic view which showed the plan view and the sectional view of the resin-sealed semiconductor device according to Embodiment 3. 従来のモールド樹脂封止型半導体装置の構造模式図である。It is a structural schematic diagram of the conventional mold resin sealing type semiconductor device.

実施の形態１．
以下、実施の形態１における樹脂封止型半導体装置を図１に基づいて説明する。
図１（ａ）は実施の形態１における樹脂封止型半導体装置の平面図、図１（ｂ）はその断面図である。以下、半導体装置として電力変換装置などに使用されるパワー半導体装置について説明する。 Embodiment 1.
Hereinafter, the resin-sealed semiconductor device according to the first embodiment will be described with reference to FIG.
FIG. 1A is a plan view of the resin-sealed semiconductor device according to the first embodiment, and FIG. 1B is a sectional view thereof. Hereinafter, a power semiconductor device used as a power conversion device or the like as a semiconductor device will be described.

図１において、樹脂封止型半導体装置は、スイッチング動作により電力変換を行う半導体素子１と、この半導体素子１を実装し電気的に絶縁する溝状の横断スリット７を有するリードフレーム３と、半導体素子１とリードフレーム３を半田で電気的に接続するインナーリード２と、半導体素子１とインナーリード２とリードフレーム３を被覆して筐体を形成するモールド樹脂６で構成されている。 In FIG. 1, the resin-sealed semiconductor device includes a semiconductor element 1 that performs power conversion by a switching operation, a lead frame 3 having a groove-shaped cross slit 7 on which the semiconductor element 1 is mounted and electrically insulated, and a semiconductor. It is composed of an inner lead 2 that electrically connects the element 1 and the lead frame 3 with solder, and a mold resin 6 that covers the semiconductor element 1, the inner lead 2 and the lead frame 3 to form a housing.

リードフレーム３は横断スリット７の近傍に釣り部５が設けられており、この釣り部５によって半導体素子１はリードフレーム３を介して支持されるようになっている。また、リードフレーム３は、銅材をプレス加工して製作されており、Ｐ側、Ｎ側、出力側の端子としてモールド樹脂６の外側にそれぞれ外部配線部４が形成されている。
半導体素子１とインナーリード２を電気的に絶縁するリードフレーム３の横断スリット７は、従来のような直線的ではなく、途中に２カ所以上の直角に屈曲した折曲げ部（クランク部）８を有している。 The lead frame 3 is provided with a fishing portion 5 in the vicinity of the cross slit 7, and the semiconductor element 1 is supported by the fishing portion 5 via the lead frame 3. Further, the lead frame 3 is manufactured by pressing a copper material, and external wiring portions 4 are formed on the outside of the mold resin 6 as terminals on the P side, the N side, and the output side, respectively.
The transverse slit 7 of the lead frame 3 that electrically insulates the semiconductor element 1 and the inner lead 2 is not linear as in the conventional case, but has two or more bent portions (crank portions) 8 bent at right angles in the middle. Have.

半導体素子１は熱を発するため、冷却が不可欠であり、放熱のためのヒートシンク１０が設けられる。リードフレーム３は外部配線部４と釣り部５を含めヒートシンク１０との絶縁性が必要であるため、半導体素子１を実装したリードフレーム３は絶縁シート９を介してヒートシンク１０へ固定されている。 Since the semiconductor element 1 generates heat, cooling is indispensable, and a heat sink 10 for heat dissipation is provided. Since the lead frame 3 needs to be insulated from the heat sink 10 including the external wiring portion 4 and the fishing portion 5, the lead frame 3 on which the semiconductor element 1 is mounted is fixed to the heat sink 10 via the insulating sheet 9.

パワー半導体装置の半導体素子１が大電流を通電できるようリードフレーム３をＰ側、Ｎ側、出力側の３つに分割する場合、リードフレーム３の端から端まで分断する横断スリット７に絶縁を確保したまま折曲げ部８を少なくとも２カ所設けて、剛性の弱い箇所が一直線にならない構造とする。モールド樹脂成形すれば、モールド樹脂６とリードフレーム３の線膨張係数の差により、モールド樹脂６に変形が発生するが、リードフレーム３の横断スリット７に直線状に剛性が低い箇所が無いので、形状的に変形の起点が無く、モールド樹脂６の変形を最小量に抑えることができる。
リードフレーム３の横断スリット７の厚みは１ｍｍ前後であり、モールド樹脂６よりも剛性が低いため、モールド樹脂６の変形量を抑制するには、直角に屈曲した折曲げ部８は２カ所以上必要になる。 When the lead frame 3 is divided into three sides, P side, N side, and output side so that the semiconductor element 1 of the power semiconductor device can carry a large current, insulation is provided in the cross slit 7 that divides the lead frame 3 from end to end. At least two bending portions 8 are provided while being secured, so that the portions having weak rigidity are not aligned. If the mold resin is molded, the mold resin 6 is deformed due to the difference in the linear expansion coefficient between the mold resin 6 and the lead frame 3, but since there is no linearly low rigidity portion in the cross slit 7 of the lead frame 3. There is no starting point of deformation in terms of shape, and deformation of the mold resin 6 can be suppressed to a minimum amount.
Since the thickness of the cross slit 7 of the lead frame 3 is about 1 mm and the rigidity is lower than that of the mold resin 6, two or more bent portions 8 bent at right angles are required to suppress the amount of deformation of the mold resin 6. become.

モールド樹脂６の形状的な変形を抑制できれば、安価なモールド樹脂６を採用することも可能となり、半導体素子１の冷却のためにヒートシンク１０へ密着させるために強い荷重も必要なく、安易な固定方法を採用することができるため、レイアウトの自由度の向上も含め、小型化、低コスト化が実現できる。
リードフレーム３はプレス加工で製作するので、プレスできる形状であれば、折曲げ部８の位置、形状、数量は任意に設定することができるので、変形量の調整が可能となり、歩留まりを向上させることができる。 If the shape deformation of the mold resin 6 can be suppressed, it is possible to use an inexpensive mold resin 6, and a strong load is not required to bring it into close contact with the heat sink 10 for cooling the semiconductor element 1, and an easy fixing method. Because it can be adopted, it is possible to realize miniaturization and cost reduction, including improvement of the degree of freedom of layout.
Since the lead frame 3 is manufactured by press working, the position, shape, and quantity of the bent portion 8 can be arbitrarily set as long as the shape can be pressed, so that the amount of deformation can be adjusted and the yield is improved. be able to.

以上のように実施の形態１は、リードフレーム３の横断スリット７に絶縁を確保したまま折曲げ部８を２カ所以上設けて、剛性の弱い箇所が一直線にならない構造とすることにより、形状的に変形の起点となる低剛性部分を無くしてモールド樹脂６の変形量を抑制し、ヒートシンク１０との固定を簡易に行える小型で安価な樹脂封止型半導体装置が得られる。 As described above, in the first embodiment, the cross slits 7 of the lead frame 3 are provided with two or more bent portions 8 while ensuring insulation, so that the portions having weak rigidity are not aligned in shape. A small and inexpensive resin-sealed semiconductor device can be obtained by eliminating the low-rigidity portion that is the starting point of deformation, suppressing the amount of deformation of the mold resin 6, and easily fixing the mold resin 6 to the heat sink 10.

実施の形態２．
次に、実施の形態２における樹脂封止型半導体装置を図２に基づいて説明する。
図２（ａ）は実施の形態２における樹脂封止型半導体装置の平面図、図２（ｂ）はその断面図である。
リードフレーム３の材料として一定厚み材を使用するのが一般的であるが、更に半導体素子１の出力を向上させる場合は、半導体素子１の熱の拡散領域を広げることが必須である。 Embodiment 2.
Next, the resin-sealed semiconductor device according to the second embodiment will be described with reference to FIG.
FIG. 2A is a plan view of the resin-sealed semiconductor device according to the second embodiment, and FIG. 2B is a sectional view thereof.
Generally, a constant-thickness material is used as the material of the lead frame 3, but in order to further improve the output of the semiconductor element 1, it is essential to widen the heat diffusion region of the semiconductor element 1.

実施の形態２は、図２に示すように半導体素子１が搭載されるリードフレーム３として、熱の拡散領域１２（斜線部で示す）である半導体素子１の実装部分及びその周辺部の板厚は、他の部分よりも板厚を大きくした異厚材を用いたものである。その他の構成は図１に示す実施の形態１と同じ構成につき、同じまたは相当部分には同じ符号を付して説明を省略する。 In the second embodiment, as shown in FIG. 2, as the lead frame 3 on which the semiconductor element 1 is mounted, the plate thickness of the mounting portion of the semiconductor element 1 which is the heat diffusion region 12 (shown by the shaded area) and the peripheral portion thereof. Uses a different thickness material whose plate thickness is larger than that of other parts. The other configurations are the same as those of the first embodiment shown in FIG. 1, and the same or corresponding parts are designated by the same reference numerals and the description thereof will be omitted.

実施の形態３．
次に、実施の形態３における樹脂封止型半導体装置を図３に基づいて説明する。
図３（ａ）は実施の形態３における樹脂封止型半導体装置の平面図、図３（ｂ）はその断面図である。
半導体素子１の出力を向上させる他の方法として、実施の形態３は図３に示すように、発熱体である半導体素子１と放熱器であるヒートシンク１０の間に、リードフレーム３の厚みの数倍厚の金属製のヒートスプレッダ１３を挿入したものである。ヒートスプレッダ１３は発熱体と放熱器の間に挿入することで緩衝体として放熱効果を高めることが知られている。 Embodiment 3.
Next, the resin-sealed semiconductor device according to the third embodiment will be described with reference to FIG.
FIG. 3A is a plan view of the resin-sealed semiconductor device according to the third embodiment, and FIG. 3B is a sectional view thereof.
As another method for improving the output of the semiconductor element 1, in the third embodiment, as shown in FIG. 3, the number of thicknesses of the lead frame 3 between the semiconductor element 1 which is a heating element and the heat sink 10 which is a radiator A double-thick metal heat spreader 13 is inserted. It is known that the heat spreader 13 is inserted between a heating element and a radiator to enhance the heat dissipation effect as a buffer.

図３において、樹脂封止型半導体装置は、スイッチング動作により電力変換を行う半導体素子１と、この半導体素子１を実装するヒートスプレッダ１３と、半導体素子１とヒートスプレッダ１３を電気的に接続するリードフレーム３と、半導体素子１とヒートスプレッダ１３とリードフレーム３を被覆して筐体を形成するモールド樹脂６とを備えている。
半導体素子１の実装部分のリードフレーム３は分離され、ヒートスプレッダ１３は溝状の横断スリット７によって２つに分割されて電気的に絶縁され、横断スリット７は隣接するヒートスプレッダ１３の端面の間隔内に１カ所以上の直角に屈曲した折曲げ部（クランク部）８を有している。 In FIG. 3, the resin-sealed semiconductor device includes a semiconductor element 1 that performs power conversion by a switching operation, a heat spreader 13 that mounts the semiconductor element 1, and a lead frame 3 that electrically connects the semiconductor element 1 and the heat spreader 13. A semiconductor element 1, a heat spreader 13, and a mold resin 6 that covers the lead frame 3 to form a housing are provided.
The lead frame 3 of the mounting portion of the semiconductor element 1 is separated, the heat spreader 13 is divided into two by a groove-shaped cross slit 7 and electrically insulated, and the cross slit 7 is within the distance between the end faces of the adjacent heat spreaders 13. It has at least one bent portion (crank portion) 8 bent at a right angle.

ヒートスプレッダ１３の横断スリット７の厚みは２ｍｍ以上あり、モールド樹脂６と同等以上の剛性を有しているので、折曲げ部８は１カ所以上でモールド樹脂６の変形量の抑制効果が期待できる。
実施の形態２の場合も、ヒートスプレッダ１３の横断スリット７に絶縁を確保したまま折曲げ部８を１カ所以上設けて剛性の弱い箇所が一直線にならない構造をとれば、モールド樹脂６の変形を最小量に抑えることができるので、同様の効果を得ることができる。 Since the thickness of the cross slit 7 of the heat spreader 13 is 2 mm or more and has the same or higher rigidity as the mold resin 6, the effect of suppressing the amount of deformation of the mold resin 6 can be expected at one or more bent portions 8.
Also in the case of the second embodiment, if one or more bent portions 8 are provided in the cross slit 7 of the heat spreader 13 while the insulation is secured and the portions having weak rigidity are not aligned, the deformation of the mold resin 6 is minimized. Since the amount can be suppressed, the same effect can be obtained.

なお、上記実施の形態で、絶縁のために個別の絶縁シート９を使用しているが、モールド成形時に絶縁シート９を一体成型するか、モールド成形時にリードフレーム３の裏面までモールド樹脂６で封止するなどで、絶縁機能をモールド樹脂封止型パワー半導体の裏面に持たすことが可能であるので、ヒートシンク１０との組立性を向上させることができ、更なる低コスト化が実現できる。 In the above embodiment, the individual insulating sheet 9 is used for insulation, but the insulating sheet 9 is integrally molded at the time of molding, or the back surface of the lead frame 3 is sealed with the molding resin 6 at the time of molding. Since the insulating function can be provided on the back surface of the molded resin-sealed power semiconductor by stopping or the like, the assembling property with the heat sink 10 can be improved, and further cost reduction can be realized.

本開示は、様々な例示的な実施の形態及び実施例が記載されているが、１つ、または複数の実施の形態に記載された様々な特徴、態様、及び機能は特定の実施の形態の適用に限られるのではなく、単独で、または様々な組み合わせで実施の形態に適用可能である。
従って、例示されていない無数の変形例が、本願に開示される技術の範囲内において想定される。例えば、少なくとも１つの構成要素を変形する場合、追加する場合または省略する場合、さらには、少なくとも１つの構成要素を抽出し、他の実施の形態の構成要素と組み合わせる場合が含まれるものとする。 Although the present disclosure describes various exemplary embodiments and examples, the various features, embodiments, and functions described in one or more embodiments are those of a particular embodiment. It is not limited to application, but can be applied to embodiments alone or in various combinations.
Therefore, innumerable variations not illustrated are envisioned within the scope of the techniques disclosed in the present application. For example, it is assumed that at least one component is modified, added or omitted, and further, at least one component is extracted and combined with the components of other embodiments.

１：半導体素子、 ２：インナーリード、 ３：リードフレーム、 ４：外部配線部、
５：釣り部、 ６：モールド樹脂、 ７：横断スリット、 ８：折曲げ部、
９：絶縁シート、 １０：ヒートシンク、１２：熱の拡散領域、
１３：ヒートスプレッダ。 1: Semiconductor element, 2: Inner lead, 3: Lead frame, 4: External wiring part,
5: Fishing part, 6: Mold resin, 7: Cross slit, 8: Bent part,
9: Insulation sheet, 10: Heat sink, 12: Heat diffusion area,
13: Heat spreader.

Claims (1)

スイッチング動作により電力変換を行う半導体素子と、前記半導体素子を実装し電気的に絶縁する横断スリットを有するリードフレームと、前記半導体素子と前記リードフレームを電気的に接続するインナーリードと、前記半導体素子と前記リードフレームと前記インナーリードを被覆して筐体を形成するモールド樹脂と、前記リードフレームの前記半導体素子の実装側とは反対側の面に絶縁シートを介して設けられたヒートシンクを備え、前記リードフレームの対向する端から端まで一直線で分断する前記横断スリットは途中に２カ所以上の直角に屈曲した折曲げ部を設けると共に、前記リードフレームは前記半導体素子の実装部分の板厚を他の箇所よりも大きくしたことを特徴とする樹脂封止型半導体装置。 A semiconductor element that performs power conversion by a switching operation, a lead frame having a transverse slit that mounts the semiconductor element and electrically insulates, an inner lead that electrically connects the semiconductor element and the lead frame, and the semiconductor element. A mold resin that coats the lead frame and the inner lead to form a housing, and a heat sink provided on the surface of the lead frame opposite to the mounting side of the semiconductor element via an insulating sheet. The cross slit that divides the lead frame from the opposite end to the end in a straight line is provided with two or more bent portions bent at right angles in the middle, and the lead frame has a thickness of a mounting portion of the semiconductor element. A resin-sealed semiconductor device characterized by being larger than the above-mentioned part.
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