JP6766184B2 - ハフニア及びジルコニアの蒸気相エッチング - Google Patents
ハフニア及びジルコニアの蒸気相エッチング Download PDFInfo
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- JP6766184B2 JP6766184B2 JP2018563504A JP2018563504A JP6766184B2 JP 6766184 B2 JP6766184 B2 JP 6766184B2 JP 2018563504 A JP2018563504 A JP 2018563504A JP 2018563504 A JP2018563504 A JP 2018563504A JP 6766184 B2 JP6766184 B2 JP 6766184B2
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- 238000005530 etching Methods 0.000 title claims description 129
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 title claims description 42
- 239000012808 vapor phase Substances 0.000 title claims description 30
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 title claims description 25
- 241000588731 Hafnia Species 0.000 title description 17
- 239000000463 material Substances 0.000 claims description 113
- 238000006243 chemical reaction Methods 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 63
- 239000007795 chemical reaction product Substances 0.000 claims description 61
- 239000012530 fluid Substances 0.000 claims description 26
- 239000007787 solid Substances 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 18
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 claims description 12
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 claims description 8
- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical compound ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- 239000006227 byproduct Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 description 51
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 33
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 33
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 33
- 230000008859 change Effects 0.000 description 22
- 239000007789 gas Substances 0.000 description 14
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- DUAIJEYNEJQOCE-OLSVQSNTSA-N (3s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6,7,7,7-tetrafluoro-6-(trifluoromethyl)heptan-2-yl]-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthren-3-ol Chemical compound C1C=C2C[C@@H](O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@@H](CCCC(F)(C(F)(F)F)C(F)(F)F)C)[C@@]1(C)CC2 DUAIJEYNEJQOCE-OLSVQSNTSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- -1 WCl 6 Chemical compound 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- BWKCCRPHMILRGD-UHFFFAOYSA-N chloro hypochlorite;tungsten Chemical compound [W].ClOCl BWKCCRPHMILRGD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
表1:
表3
表4
表6
表7
Claims (10)
- 蒸気相エッチングの方法であって、
酸化物材料をエッチング媒体と接触させて前記酸化物材料とエッチング媒体との反応を起こすことであって、前記酸化物材料が、前記酸化物材料のプラズマ曝露なしで、ハフニア(HfO2)及びジルコニア(ZrO2)のうちの少なくとも1つを含み、前記エッチング媒体が、塩化リン及び塩化タングステンのうちの少なくとも1つを含む、前記酸化物材料とエッチング媒体との反応を起こすことと、
除去可能な流体反応生成物を条件下で生成することと、
前記除去可能な流体反応生成物を除去することと
を含む、方法。 - 前記エッチング媒体との前記酸化物材料の前記接触が、前記酸化物材料及び前記エッチング媒体の自己制限反応をもたらす、請求項1に記載の方法。
- 前記エッチング媒体による前記酸化物材料のエッチングの深さを制御するために前記酸化物材料及び前記エッチング媒体の前記反応を調節することをさらに含む、請求項1に記載の方法。
- 前記酸化物材料及び前記エッチング媒体の前記反応が、前記除去可能な反応生成物の少なくとも一部として揮発性オキシ塩化物副生成物を生成する、請求項1に記載の方法。
- 前記エッチング媒体が、WCl6、W2Cl10及びPCl3、PCl5のうちの少なくとも1つを含む塩化タングステンエッチャントを含む、請求項1に記載の方法。
- 前記酸化物材料及び前記エッチング媒体の前記反応が、反応W2Cl10(g)+HfO2(s)=2WOCl3(s)+HfCl4(g)を含む、請求項1に記載の方法。
- 前記エッチング媒体中の前記酸化物材料の前記反応が非流体反応生成物も生成する、請求項1に記載の方法。
- P2O3(l)が前記酸化物材料上に堆積し、且つ前記酸化物材料及び前記エッチング媒体の前記反応を特徴において自己制限的にするように、前記除去可能な流体反応生成物がP2O3を含み、前記酸化物材料及び前記エッチング媒体の前記反応が実施される、請求項1に記載の方法。
- 前記除去可能な流体反応生成物に加えて、前記酸化物材料上に堆積し、且つ前記酸化物材料及び前記エッチング媒体の前記反応を特徴において自己制限的にする固体反応生成物を、前記酸化物材料及び前記エッチング媒体の前記反応が生成する、請求項1に記載の方法。
- 蒸気相エッチングの方法であって、
酸化物材料をエッチング媒体と接触させて前記酸化物材料及びエッチング媒体の反応を起こすことであって、前記酸化物材料が、前記酸化物材料のプラズマ曝露なしで、ハフニア(HfO2)及びジルコニア(ZrO2)のうちの少なくとも1つを含み、前記エッチング媒体が、塩化リン及び塩化タングステンのうちの少なくとも1つを含む、前記酸化物材料及びエッチング媒体の反応を起こすことと、
その前記蒸気相エッチングにおける前記酸化物材料のエッチング速度及び/又はエッチング深さを制限する液体及び/又は固体反応生成物を条件下で生成することと、
前記酸化物材料及び前記エッチング媒体の前記反応を停止させることと、
前記液体及び/又は固体反応生成物を前記酸化物材料から除去することと
を含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662345062P | 2016-06-03 | 2016-06-03 | |
US62/345,062 | 2016-06-03 | ||
PCT/US2017/035613 WO2017210518A1 (en) | 2016-06-03 | 2017-06-02 | Vapor phase etching of hafnia and zirconia |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019519109A JP2019519109A (ja) | 2019-07-04 |
JP6766184B2 true JP6766184B2 (ja) | 2020-10-07 |
Family
ID=59055326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018563504A Active JP6766184B2 (ja) | 2016-06-03 | 2017-06-02 | ハフニア及びジルコニアの蒸気相エッチング |
Country Status (6)
Country | Link |
---|---|
US (1) | US10002772B2 (ja) |
JP (1) | JP6766184B2 (ja) |
KR (1) | KR102179230B1 (ja) |
CN (1) | CN109463005B (ja) |
TW (1) | TWI666703B (ja) |
WO (1) | WO2017210518A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017210518A1 (en) | 2016-06-03 | 2017-12-07 | Entegris, Inc. | Vapor phase etching of hafnia and zirconia |
CN110050331B (zh) | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
US10283319B2 (en) * | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
JP6679642B2 (ja) * | 2018-03-27 | 2020-04-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP7189321B2 (ja) * | 2018-08-10 | 2022-12-13 | アプライド マテリアルズ インコーポレイテッド | 自己組織化単分子層を使用する選択的堆積のための方法 |
JP2021019201A (ja) | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | 半導体処理システム用シャワーヘッドデバイス |
US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
US11624111B2 (en) * | 2020-01-16 | 2023-04-11 | Entegris, Inc. | Method for etching or deposition |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4490209B2 (en) * | 1983-12-27 | 2000-12-19 | Texas Instruments Inc | Plasma etching using hydrogen bromide addition |
DE19500674A1 (de) * | 1995-01-12 | 1996-07-18 | Degussa | Oberflächenmodifizierte pyrogen hergestellte Mischoxide, Verfahren zu ihrer Herstellung und Verwendung |
JP2983476B2 (ja) * | 1996-10-30 | 1999-11-29 | キヤノン販売株式会社 | 成膜方法及び半導体装置の製造方法 |
US6534413B1 (en) * | 2000-10-27 | 2003-03-18 | Air Products And Chemicals, Inc. | Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch |
EP1485513A2 (en) * | 2002-03-08 | 2004-12-15 | Sundew Technologies, LLC | Ald method and apparatus |
US7357138B2 (en) * | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
CN1755479A (zh) * | 2004-09-27 | 2006-04-05 | Idc公司 | 用于以提高的效率进行二氟化氙蚀刻的方法及*** |
JP4701691B2 (ja) * | 2004-11-29 | 2011-06-15 | 東京エレクトロン株式会社 | エッチング方法 |
US20070117396A1 (en) * | 2005-11-22 | 2007-05-24 | Dingjun Wu | Selective etching of titanium nitride with xenon difluoride |
US7566664B2 (en) * | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
JP2009076590A (ja) * | 2007-09-19 | 2009-04-09 | Hitachi Kokusai Electric Inc | クリーニング方法 |
JP5011148B2 (ja) * | 2008-02-06 | 2012-08-29 | 大陽日酸株式会社 | 半導体装置の製造方法、クリーニング方法及び基板処理装置 |
US8809195B2 (en) * | 2008-10-20 | 2014-08-19 | Asm America, Inc. | Etching high-k materials |
CA2690697A1 (en) * | 2009-01-27 | 2010-07-27 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
US8313994B2 (en) * | 2009-03-26 | 2012-11-20 | Tokyo Electron Limited | Method for forming a high-K gate stack with reduced effective oxide thickness |
WO2010114687A1 (en) * | 2009-03-30 | 2010-10-07 | Megica Corporation | Integrated circuit chip using top post-passivation technology and bottom structure technology |
CN101882595B (zh) * | 2009-05-08 | 2014-07-09 | 盛美半导体设备(上海)有限公司 | 阻挡层的去除方法和装置 |
WO2011017339A2 (en) * | 2009-08-06 | 2011-02-10 | Applied Materials, Inc. | Methods of selectively depositing an epitaxial layer |
KR20110098355A (ko) * | 2010-02-26 | 2011-09-01 | 성균관대학교산학협력단 | 중성빔 식각 장치를 이용한 원자층 식각 방법 |
CN102237268B (zh) * | 2010-04-21 | 2013-08-28 | 中国科学院微电子研究所 | 一种***式TiN金属栅叠层结构的制备和刻蚀方法 |
CN102315115A (zh) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | 一种HfSiAlON高K介质的干法刻蚀方法 |
CN103700615B (zh) * | 2012-09-27 | 2018-11-06 | 盛美半导体设备(上海)有限公司 | 二氟化氙气相刻蚀阻挡层的方法 |
US10249511B2 (en) * | 2014-06-27 | 2019-04-02 | Lam Research Corporation | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus |
US9564342B2 (en) * | 2014-09-26 | 2017-02-07 | Tokyo Electron Limited | Method for controlling etching in pitch doubling |
US9595466B2 (en) * | 2015-03-20 | 2017-03-14 | Applied Materials, Inc. | Methods for etching via atomic layer deposition (ALD) cycles |
WO2017210518A1 (en) | 2016-06-03 | 2017-12-07 | Entegris, Inc. | Vapor phase etching of hafnia and zirconia |
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