JP6743787B2 - 荷電粒子ビーム描画装置及びブランキング回路の故障診断方法 - Google Patents
荷電粒子ビーム描画装置及びブランキング回路の故障診断方法 Download PDFInfo
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
10 制御部
11 制御計算機
12 ショットデータ生成部
13 描画制御部
14 異常診断部
18 記憶装置
20 ブランキング回路
22 レンズ制御回路
30 描画部
32 電子鏡筒
34 描画室
40 電子銃
41 ブランキングアパーチャ
42 第1成形アパーチャ
43 第2成形アパーチャ
44 ブランキング偏向器
45 成形偏向器
46 対物偏向器
47 照明レンズ
48 投影レンズ
49 対物レンズ
50 ステージ
52 照射位置検出器
54 マーク
Claims (5)
- 荷電粒子ビームを放出する放出部と、
ブランキング電圧の印加により前記荷電粒子ビームを偏向し、ビームのブランキング制御を行うブランキング偏向器と、
前記ブランキング偏向器に前記ブランキング電圧を印加するブランキング回路と、
前記荷電粒子ビームが照射される基板が載置されるステージと、
前記ステージ上に設けられたマークと、
前記マークに対する前記荷電粒子ビームの照射により、前記荷電粒子ビームの照射位置を検出する検出器と、
前記マークに対して前記荷電粒子ビームを所定のデフォーカス状態とし、第1照射条件で前記マークを前記荷電粒子ビームで走査した場合に前記検出器で検出される第1照射位置と、該第1照射条件から照射時間およびセトリング時間の少なくともいずれかを変動させた第2照射条件で前記マークを前記荷電粒子ビームで走査した場合に前記検出器で検出される第2照射位置との差分を比較し、該差分が所定値以上である場合に前記ブランキング回路に故障が発生していると診断する診断部と、
を備える荷電粒子ビーム描画装置。 - 前記基板又は前記マークに照射される前記荷電粒子ビームの焦点位置を調整するレンズをさらに備えることを特徴とする請求項1に記載の荷電粒子ビーム描画装置。
- ブランキング回路を用いてブランキング偏向器にブランキング電圧を印加し、荷電粒子ビームのオンオフを切り替えるブランキング制御を行う工程と、
描画対象の基板が載置されるステージ上に設けられたマークに対して前記荷電粒子ビームを所定のデフォーカス状態とし、第1照射条件で前記マークを前記荷電粒子ビームで走査し、前記荷電粒子ビームの第1照射位置を検出する工程と、
前記所定のデフォーカス状態で、前記第1照射条件から照射時間およびセトリング時間の少なくともいずれかを変動させた第2照射条件で前記マークを前記荷電粒子ビームで走査し、前記荷電粒子ビームの第2照射位置を検出する工程と、
前記第1照射位置と前記第2照射位置との差分を比較し、該差分が所定値以上である場合に前記ブランキング回路に故障が発生していると診断する工程と、
を備えるブランキング回路の故障診断方法。 - 前記マークを前記荷電粒子ビームで走査する前に、対物レンズを用いて前記荷電粒子ビームの焦点位置を変えることを特徴とする請求項3に記載のブランキング回路の故障診断方法。
- 描画処理の途中で、前記ブランキング回路の故障発生有無の診断を行い、前記差分が所定値未満である場合、前記ブランキング回路に故障は発生していないと診断し、診断後、前記基板の表面高さに前記荷電粒子ビームの焦点位置を合わせて描画処理を再開することを特徴とする請求項3又は4に記載のブランキング回路の故障診断方法。
Priority Applications (5)
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JP2017175848A JP6743787B2 (ja) | 2017-09-13 | 2017-09-13 | 荷電粒子ビーム描画装置及びブランキング回路の故障診断方法 |
TW107128568A TWI690967B (zh) | 2017-09-13 | 2018-08-16 | 帶電粒子束描繪裝置及遮沒電路的故障診斷方法 |
KR1020180107962A KR102137680B1 (ko) | 2017-09-13 | 2018-09-10 | 하전 입자 빔 묘화 장치 및 블랭킹 회로의 고장 진단 방법 |
US16/129,408 US10460902B2 (en) | 2017-09-13 | 2018-09-12 | Charged particle beam writing apparatus and method for diagnosing failure of blanking circuit |
CN201811066688.8A CN109491211B (zh) | 2017-09-13 | 2018-09-13 | 带电粒子束描绘装置及消隐电路的故障诊断方法 |
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JPH04181716A (ja) * | 1990-11-16 | 1992-06-29 | Jeol Ltd | 描画ビーム径調整方法 |
JP3508622B2 (ja) * | 1999-05-20 | 2004-03-22 | 株式会社日立製作所 | 電子ビーム描画装置および電子ビームを用いた描画方法 |
JP2004111708A (ja) | 2002-09-19 | 2004-04-08 | A & D Co Ltd | 電子ビーム描画装置の焦点調整方法 |
JP2005093837A (ja) * | 2003-09-19 | 2005-04-07 | Hitachi High-Technologies Corp | 描画パターンの検証方法および電子線描画装置 |
WO2006102916A1 (de) * | 2005-03-31 | 2006-10-05 | Infineon Technologies Ag | Verfahren zum ermitteln einer strahlungsleistung und eine belichtungsvorrichtung |
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JP6577787B2 (ja) * | 2015-08-11 | 2019-09-18 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
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