JP6671464B2 - 処理装置のメンテナンス制御方法及び制御装置 - Google Patents
処理装置のメンテナンス制御方法及び制御装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 152
- 238000000034 method Methods 0.000 title claims description 47
- 238000012423 maintenance Methods 0.000 title claims description 35
- 238000004140 cleaning Methods 0.000 claims description 31
- 238000004458 analytical method Methods 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 30
- 230000008859 change Effects 0.000 claims description 21
- 238000003860 storage Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 239000013307 optical fiber Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 27
- 239000007795 chemical reaction product Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 238000004891 communication Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 9
- 230000005856 abnormality Effects 0.000 description 7
- 238000005108 dry cleaning Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DMCUBCDYHQYAKH-UHFFFAOYSA-M [F-].[Cl+] Chemical compound [F-].[Cl+] DMCUBCDYHQYAKH-UHFFFAOYSA-M 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
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- G05B19/0426—Programming the control sequence
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- G01N2291/269—Various geometry objects
- G01N2291/2697—Wafer or (micro)electronic parts
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/24—Pc safety
- G05B2219/24001—Maintenance, repair
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
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Description
まず、本発明の一実施形態に係るプラズマ処理装置1の全体構成について、図1を参照しながら説明する。図1には、プラズマ処理装置の縦断面の一例及び制御装置のハードウェア構成の一例が示されている。本実施形態では、プラズマ処理装置1として容量結合型プラズマエッチング装置を例に挙げて説明する。なお、プラズマ処理装置1は、基板の処理を行う処理装置の一例である。
プラズマ処理装置1には、装置全体の動作を制御する制御装置100が設けられている。図1を参照して、制御装置のハードウェア構成の一例について説明する。制御装置100は、増幅器101、フィルタ102、CPU(Central Processing Unit)103、ROM(Read Only Memory)104、RAM(Random Access Memory)105、ディスプレイ106、スピーカ107及び通信インターフェース110を有している。
次に、制御装置100の機能構成の一例について、図2を参照しながら説明する。制御装置100は、通信部10、増幅部11、フィルタ部12、周波数変換部13、温度取得部14、温度変化判定部15、第1の振動判定部16、第2の振動判定部17、分析部18、出力部19、記憶部20及び処理実行部21を有する。
かかる構成のプラズマ処理装置1においてエッチング処理が行われる場合、供給されるエッチングガスの一例としては、フッ素含有ガスが挙げられる。具体的には、エッチングガスの一例としては、フロオロカーボン系ガス(CF4、CHF3、CH2F2、C5F8など)、ハロゲン系ガス(Cl2、F2、Br2など)、ハロゲン化水素系ガス(HF、HCl、HBrなど)が挙げられる。
本実施形態では、振動センサーにAEセンサー108が採用され、加速度センサーは採用されていない。その理由は、図3に示すように、AEセンサー及び加速度センサーの検出する振動の周波数帯域がずれていることによる。つまり、加速度センサーは、100kHz以上の周波数の振動を検知しない。これに対して、AEセンサーは、100kHz以上の周波数の振動を検出する。
次に、本実施形態に係るメンテナンス制御処理について、図4に示すフローチャートを参照しながら説明する。本処理が開始されると、温度取得部14は、温度センサー109が検出した温度信号から温度データを取得する(ステップS10)。増幅部11は、AEセンサー108が検出した振動信号から振動データを取得(ステップS10)して適宜信号を増幅する。
2 処理容器
3 下部電極(載置台)
4 上部電極
5 ガス供給源
10 通信部
11 増幅部
12 フィルタ部
13 周波数変換部
14 温度取得部
15 温度変化判定部
16 第1の振動判定部
17 第2の振動判定部
18 分析部
19 出力部
20 記憶部
21 処理実行部
32 第1高周波電源
34 第2高周波電源
100 制御装置
101 増幅器
102 フィルタ
103 CPU
104 ROM
105 RAM
106 ディスプレイ
107 スピーカ
108 AEセンサー
109 温度センサー
110 通信インターフェース
Claims (9)
- 基板の処理を行う処理装置の構成部材の温度が5℃以上変化したか否か、又は、該構成部材の設定温度を5℃以上変化させたか否かを判定し、
前記構成部材の温度が5℃以上変化した、又は、該構成部材の設定温度を5℃以上変化させたと判定されたタイミングに応じて、前記処理装置に設けられた振動センサーにより検出された振動データに、主に周波数が100kHz以下であって、所定以上の振動強度が300μs以上の時間継続される第1の振動が所定の個数以上含まれているかを判定し、
前記第1の振動が所定の個数以上含まれていると判定した場合、前記振動センサーにより検出された振動データに、主に周波数が100kHz〜300kHzの範囲であって、所定以上の振動強度が300μs以下の時間で終了する第2の振動が所定の個数以上含まれているかを判定し、
前記第2の振動が所定の個数以上含まれていると判定した場合、前記第1の振動及び前記第2の振動が含まれる振動データに基づき前記処理装置の状態を分析する、
処理をコンピュータが実行する処理装置のメンテナンス制御方法。 - 前記分析した結果に応じてメンテナンスの制御を行う、
請求項1に記載のメンテナンス制御方法。 - 前記処理装置には、複数の前記振動センサーが設けられ、
複数の前記振動センサーにより検出されたデータのうち、前記第1の振動が所定の個数以上含まれているかを判定し、
前記第1の振動が所定の個数以上含まれていると判定した場合、前記複数の振動センサーにより検出された振動データに、前記第2の振動が所定の個数以上含まれているかを判定する、
請求項1に記載のメンテナンス制御方法。 - 前記振動センサーは、圧電素子又は光ファイバーである、
請求項1に記載のメンテナンス制御方法。 - 前記振動センサーは、前記処理装置の処理容器の外壁側、前記処理容器の内壁側及び該処理容器内の構成部材の内部の少なくともいずれかに設けられている、
請求項1のメンテナンス制御方法。 - 前記分析した結果に応じたメンテナンスの制御は、前記処理装置のクリーニングの開始のタイミング又は前記処理装置のメンテナンスを促すアラームの出力を制御する、
請求項2に記載のメンテナンス制御方法。 - 前記第1の振動及び第2の振動を含む振動データを記憶部に記憶し、又は外部の記憶部に記憶させ、
前記記憶部に記憶し、又は前記外部の記憶部に記憶させた前記振動データに基づき、前記処理装置に生じた振動の要因を分析し、又は外部の装置に分析させ、
前記分析の結果得られたデータを、処理装置の設計において利用する、
請求項5に記載のメンテナンス制御方法。 - 基板の処理を行う処理装置を制御する制御装置であって、
基板の処理を行う処理装置の構成部材の温度が5℃以上変化したか否か、又は、該構成部材の設定温度を5℃以上変化させたか否かを判定する温度変化判定部と、
前記構成部材の温度が5℃以上変化した、又は、該構成部材の設定温度を5℃以上変化させたと判定されたタイミングに応じて、前記処理装置に設けられた振動センサーにより検出された振動データに、主に周波数が100kHz以下であって、所定以上の振動強度が300μs以上の時間継続される第1の振動が所定の個数以上含まれているかを判定する第1の振動判定部と、
前記第1の振動が所定の個数以上含まれていると判定した場合、前記振動センサーにより検出された振動データに、主に周波数が100kHz〜300kHzの範囲であって、所定以上の振動強度が300μs以下の時間で終了する第2の振動が所定の個数以上含まれているかを判定する第2の振動判定部と、
前記第2の振動が所定の個数以上含まれていると判定した場合、前記第1の振動及び前記第2の振動が含まれる振動データに基づき前記処理装置の状態を分析する分析部と、
を有する制御装置。 - 前記分析した結果に応じてメンテナンスの制御を行う処理実行部を有する、
請求項8に記載の制御装置。
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