JP6667827B2 - Control method of spin-orbit interaction - Google Patents
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- 230000003993 interaction Effects 0.000 title claims description 47
- 238000000034 method Methods 0.000 title claims description 14
- 239000010409 thin film Substances 0.000 claims description 66
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 15
- 230000005291 magnetic effect Effects 0.000 description 13
- 230000005415 magnetization Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000005355 Hall effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000001803 electron scattering Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 101100167360 Drosophila melanogaster chb gene Proteins 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Description
本発明は、金属におけるスピン軌道相互作用の強さを制御するスピン軌道相互作用の制御方法に関する。 The present invention relates to a spin orbit interaction control method for controlling the strength of a spin orbit interaction in a metal.
これまで、スピン軌道相互作用の強い材料系におけるスピン流の生成には、スピンホール効果が用いられてきた。金属におけるスピン流の生成では、スピン軌道相互作用に起因する外因性スピンホール効果が用いられる。これは、スピン軌道相互作用の強いＰｔやＴａなどの金属に電流を流すと、金属中の不純物や結晶粒界で散乱された電子スピンが、スピンの向きに依存して逆方向に散乱され、電流方向に対して垂直方向逆向きに上向きスピンと下向きスピンとが分離する効果である。 Heretofore, the spin Hall effect has been used to generate a spin current in a material system having a strong spin-orbit interaction. In generating a spin current in a metal, an extrinsic spin-Hall effect caused by spin-orbit interaction is used. This is because when an electric current is applied to a metal such as Pt or Ta having strong spin-orbit interaction, electron spins scattered in impurities or grain boundaries in the metal are scattered in the opposite direction depending on the spin direction, This is an effect that the upward spin and the downward spin are separated from each other in a direction perpendicular to the current direction.
上述したスピンホール効果は、ＧａＡｓ半導体においてはじめて観測されている（非特許文献１，非特許文献２参照）。電流を流すと、流した電流と垂直方向にスピン流が流れ、スピン上向きと下向きの電子がチャネルエッジに蓄積される。また、金属においてもスピンホール効果を用いたスピン流の検出が可能となっている（非特許文献３参照）。このスピンホール効果によれば、非磁性体だけでスピン流を生み出すことが可能であるため、スピン偏極を利用するスピントロニクスにおいて重要なスピン生成・検出の技術となる。この技術を用いることで、近年、金属中のスピン偏極の検出や磁化反転などが実現できるようになってきた。 The above-described spin Hall effect has been observed for the first time in a GaAs semiconductor (see Non-Patent Documents 1 and 2). When a current is applied, a spin current flows in a direction perpendicular to the applied current, and upward and downward spin electrons are accumulated at the channel edge. In addition, it is possible to detect a spin current using spin Hall effect even in a metal (see Non-Patent Document 3). According to the spin Hall effect, it is possible to generate a spin current using only a non-magnetic material, and this is an important spin generation / detection technique in spintronics using spin polarization. By using this technique, detection of spin polarization in a metal, magnetization reversal, and the like can be realized in recent years.
ところで、金属を用いたスピンホール効果では、ＰｔやＴａそしてＷなどの原子番号の大きな材料が用いられてきた。この理由は、金属におけるスピン軌道相互作用は材料の原子番号の大きさに比例するため、結晶構造よりも材料そのものに依存すると考えられたためである。 By the way, in the spin Hall effect using a metal, a material having a large atomic number such as Pt, Ta, and W has been used. This is because the spin-orbit interaction in a metal is considered to depend on the material itself rather than the crystal structure, because the spin-orbit interaction is proportional to the atomic number of the material.
上述したように、従来では、スピン流の状態は、材料固有として考えられており、材料を変えることでスピン流の向きや量を制御していた。しかし、このことは、スピン軌道相互作用を大きくするためには、材料の選択が必要になる。また、従来用いられている上述した金属材料は、必ずしも強磁性体材料との組み合わせが良いとは限らないことから、強磁性体／非磁性金属構造などを用いたメモリ素子開発においては、材料選択の幅を狭めてしまうことになる。このように、従来では、スピン流の状態制御の自由度が低いという問題があった。 As described above, conventionally, the state of the spin current is considered to be unique to the material, and the direction and amount of the spin current have been controlled by changing the material. However, this requires selection of materials in order to increase spin-orbit interaction. In addition, since the above-mentioned metal materials conventionally used are not always good in combination with a ferromagnetic material, in the development of a memory element using a ferromagnetic / non-magnetic metal structure, a material selection is required. Will be narrowed. As described above, conventionally, there is a problem that the degree of freedom in controlling the state of the spin current is low.
本発明は、以上のような問題点を解消するためになされたものであり、より高い自由度でスピン流の状態が制御できるようにすることを目的とする。 The present invention has been made to solve the above problems, and has as its object to control the state of spin current with a higher degree of freedom.
本発明に係るスピン軌道相互作用の制御方法は、単一金属から構成された金属薄膜のスピン軌道相互作用の強さを制御する方法であり、金属薄膜の厚さによりスピン軌道相互作用の強さを制御する。 The method of spin-orbit interaction in accordance with the present invention is a method of controlling the intensity of the spin-orbit interaction metallic thin film composed of a single metal, the thickness of the metallic thin film spin-orbit interaction Control strength.
また、本発明に係るスピン軌道相互作用の制御方法は、単一金属から構成された金属薄膜のスピン軌道相互作用の強さを制御する方法であり、金属薄膜の結晶状態を単結晶状態または多結晶状態のいずれかにすることによりスピン軌道相互作用の強さを制御する。 The control method of the spin-orbit interaction in accordance with the present invention is a method of controlling the intensity of the spin-orbit interaction metallic thin film composed of a single metal, a crystalline state of the metallic thin-film single-crystal state Alternatively, the strength of the spin-orbit interaction is controlled by being in either of the polycrystalline states.
上記スピン軌道相互作用の制御方法において、結晶状態に加えて金属薄膜の厚さによりスピン軌道相互作用の強さを制御するようにしてもよい。 The control method of the spin-orbit interaction, may control the intensity of the spin-orbit interaction on the thickness of the metallic thin film in addition to the crystalline state.
以上説明したことにより、本発明によれば、より高い自由度でスピン流の状態が制御できるという優れた効果が得られる。 As described above, according to the present invention, an excellent effect that the state of the spin current can be controlled with a higher degree of freedom can be obtained.
以下、本発明の実施の形態について図を参照して説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
本発明は、金属から構成された金属薄膜の厚さにより、スピン軌道相互作用の強さを制御する。 According to the present invention, the strength of spin-orbit interaction is controlled by the thickness of a metal thin film composed of a metal.
まず、金属薄膜の結晶状態を結晶状態または多結晶状態のいずれかにすることによりスピン軌道相互作用の強さを制御する。 First, the strength of the spin-orbit interaction is controlled by setting the crystalline state of the metal thin film to either the crystalline state or the polycrystalline state.
また、結晶状態に加えて金属薄膜の厚さによりスピン軌道相互作用の強さを制御する。 Further, the strength of the spin-orbit interaction is controlled by the thickness of the metal thin film in addition to the crystal state.
以下、より詳細に説明する。はじめに、金属薄膜の結晶状態によりスピン軌道相互作用を制御することについて示す。スピン軌道相互作用の強い材料としてＰｔが知られており、Ｐｔを用いて単一材料におけるスピン軌道相互作用の制御について実験を実施した。まず、多結晶Ｐｔ薄膜と単結晶Ｐｔ薄膜とを作製した。 Hereinafter, this will be described in more detail. First, control of spin-orbit interaction by the crystal state of a metal thin film will be described. Pt is known as a material having a strong spin-orbit interaction, and an experiment was performed on control of spin-orbit interaction in a single material using Pt. First, a polycrystalline Pt thin film and a single crystal Pt thin film were prepared.
多結晶Ｐｔ薄膜は、主表面の面方位が（００１）とされているＧａＡｓ基板の上に、公知のスパッタ法により、基板加熱をせずにＰｔを堆積して多結晶Ｐｔ薄膜を形成した。Ｐｔ薄膜の上には、厚さ０．６ｎｍのＡｌＯ膜を形成した。多結晶Ｐｔ薄膜は、厚さ２ｎｍ、４ｎｍ、６ｎｍ、８ｎｍ、１０ｎｍ、１５ｎｍの６種類を作製した。 The polycrystalline Pt thin film was formed by depositing Pt on a GaAs substrate having a main surface having a plane orientation of (001) without heating the substrate by a known sputtering method to form a polycrystalline Pt thin film. An AlO film having a thickness of 0.6 nm was formed on the Pt thin film. Six types of polycrystalline Pt thin films having a thickness of 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, and 15 nm were prepared.
単結晶Ｐｔ薄膜は、主表面の面方位が（１１１）とされているＭｇＯ基板の上に、公知のスパッタ法により、基板温度条件を５００℃としてＰｔを堆積して単結晶Ｐｔ薄膜を形成した。単結晶Ｐｔ薄膜は、厚さ３ｎｍ、４ｎｍ、５ｎｍ、６ｎｍ，１０ｎｍの４種類を作製した。 A single-crystal Pt thin film was formed by depositing Pt on a MgO substrate having a main surface having a plane orientation of (111) at a substrate temperature of 500 ° C. by a known sputtering method. . Four types of single crystal Pt thin films having a thickness of 3 nm, 4 nm, 5 nm, 6 nm, and 10 nm were prepared.
図１に示すＸ線回折パターンより、ＧａＡｓ基板の上に形成した多結晶Ｐｔ薄膜は、多結晶であることが分かる。一方、図２（ａ）に示すＸ線回折パターンより、ＭｇＯ基板の上に形成した単結晶Ｐｔ薄膜は、単一相のみが成長できていることが分かる。また、図２の（ｂ），（ｃ）に示すＲＨＥＥＤパターンより、ＭｇＯ基板の上に形成した単結晶Ｐｔ薄膜は、Ｐｔ（１１１）が成長して単結晶となっていることがわかる。 The X-ray diffraction pattern shown in FIG. 1 indicates that the polycrystalline Pt thin film formed on the GaAs substrate is polycrystalline. On the other hand, the X-ray diffraction pattern shown in FIG. 2A shows that the single-crystal Pt thin film formed on the MgO substrate can grow only a single phase. Further, from the RHEED patterns shown in FIGS. 2B and 2C, it can be seen that the single crystal Pt thin film formed on the MgO substrate becomes a single crystal by growing Pt (111).
膜厚を薄くすることで、電子の散乱寄与を薄膜内部の不純物や粒界に起因する状態から、薄膜表面や界面における散乱に系統的に変化させた。これら膜厚の異なるＰｔ薄膜のスピン緩和時間を調べることで、どのようなスピン軌道相互作用が支配的かを明らかにする。電子の散乱頻度によってスピン軌道相互作用の起源が変化することから、電子の散乱頻度も同時に測定を行っている。 By reducing the film thickness, the electron scattering contribution was systematically changed from a state caused by impurities and grain boundaries inside the thin film to a scattering at the thin film surface and interface. By examining the spin relaxation times of these Pt thin films having different thicknesses, it becomes clear what kind of spin-orbit interaction is dominant. Since the origin of the spin-orbit interaction changes depending on the electron scattering frequency, the electron scattering frequency is also measured.
図３は、多結晶Ｐｔ薄膜（ａ）および単結晶Ｐｔ薄膜（ｂ）の各々について、異なる膜厚における磁気伝導測定をした結果を示す特性図である。多結晶Ｐｔ薄膜および単結晶Ｐｔ薄膜のいずれにおいても、弱反局在を示している。なお、図３（ｂ）において、厚さ１０ｎｍについては、明確な評価ができなかったために記載していない。これらのデータ解析から、多結晶Ｐｔ薄膜および単結晶Ｐｔ薄膜におけるスピン緩和時間を求めた。求めたスピン緩和時間について、図４に示す。図４において、（ａ）は、多結晶Ｐｔ薄膜のスピン緩和時間を示し、（ｂ）は、単結晶Ｐｔ薄膜のスピン緩和時間を示している。 FIG. 3 is a characteristic diagram showing the results of magnetic conduction measurements at different film thicknesses for each of the polycrystalline Pt thin film (a) and the single crystal Pt thin film (b). Both the polycrystalline Pt thin film and the single-crystal Pt thin film show weak antilocalization. In FIG. 3B, a thickness of 10 nm is not described because a clear evaluation could not be performed. From these data analysis, the spin relaxation time in the polycrystalline Pt thin film and the single crystal Pt thin film was obtained. FIG. 4 shows the obtained spin relaxation times. In FIG. 4, (a) shows the spin relaxation time of the polycrystalline Pt thin film, and (b) shows the spin relaxation time of the single crystal Pt thin film.
多結晶Ｐｔ薄膜では、図４の（ａ）に示すように、運動量緩和時間の増大に対し、スピン緩和時間が減少し、このあと線形的に増大した。一方、単結晶Ｐｔ薄膜においては、図４の（ｂ）に示すように、運動量緩和時間の増大にともない単調に減少する傾向を示した。 In the case of the polycrystalline Pt thin film, as shown in FIG. 4A, the spin relaxation time decreased with increasing momentum relaxation time, and then increased linearly. On the other hand, in the single crystal Pt thin film, as shown in FIG. 4B, there was a tendency to monotonously decrease as the momentum relaxation time increased.
不純物散乱およびバンド構造に起因するスピン軌道相互作用は、異なるスピン緩和の機構を与えることが知られている。ＥＹ（Elliot-Yafet）スピン緩和機構は、不純物や粒界におけるスピン依存散乱に起因し、スピン緩和時間は運動量緩和時間に比例する。ＤＰ（Dyakonov-Perel）スピン緩和機構は、バンド構造に起因したスピン軌道相互作用が生み出すスピン緩和であり、運動量緩和時間に反比例する。よって、運動量緩和時間に対するスピン緩和時間の変化を調べることでスピン緩和の起源を切り分けることが可能となる。 It is known that spin-orbit interactions due to impurity scattering and band structure provide different mechanisms for spin relaxation. The EY (Elliot-Yafet) spin relaxation mechanism is caused by spin-dependent scattering at impurities and grain boundaries, and the spin relaxation time is proportional to the momentum relaxation time. The DP (Dyakonov-Perel) spin relaxation mechanism is spin relaxation generated by spin-orbit interaction caused by the band structure, and is inversely proportional to the momentum relaxation time. Therefore, it is possible to determine the origin of spin relaxation by examining the change of the spin relaxation time with respect to the momentum relaxation time.
図４の（ａ）に示すように、多結晶Ｐｔ薄膜の場合、膜厚の薄い領域ではＤＰスピン緩和機構が支配的であるが膜厚の厚い領域ではＥＹスピン緩和機構が支配的であることが分かる。 As shown in FIG. 4A, in the case of a polycrystalline Pt thin film, the DP spin relaxation mechanism is dominant in a thin region, but the EY spin relaxation mechanism is dominant in a thick region. I understand.
一方、図４の（ｂ）に示すように、単結晶Ｐｔ薄膜の場合は、全ての領域でスピン緩和時間は運動量緩和時間の逆数に比例して変化していることから、ＤＰスピン緩和時間が支配的であること明らかとなった。 On the other hand, as shown in FIG. 4B, in the case of a single crystal Pt thin film, since the spin relaxation time changes in proportion to the reciprocal of the momentum relaxation time in all regions, the DP spin relaxation time is changed. It turned out to be dominant.
以上のことより、結晶構造が多結晶もしくは単結晶かつ膜厚の厚い領域では、スピン軌道相互作用が不純物に起因する場合（多結晶）とバンド構造に起因する場合（単結晶）があることがわかった。また、多結晶Ｐｔ薄膜では膜厚が厚い領域と薄い領域では、同様にスピン軌道相互作用の起源が異なることが明らかとなった。 As described above, in a region where the crystal structure is polycrystal or single crystal and the film thickness is large, there is a case where the spin-orbit interaction is caused by impurities (polycrystal) or a band structure (single crystal). all right. Further, it has been clarified that the origin of the spin-orbit interaction is similarly different between the thick and thin regions of the polycrystalline Pt thin film.
以上に示したように、同じ金属であっても、結晶状態によってスピン軌道相互作用の起源が異なるので、結晶状態を制御することで、スピン軌道相互作用の起源が制御できることは明らかである。単一材料においてスピン軌道相互作用の起源を変えることで、生成できるスピン流が制御可能となる。 As described above, even in the same metal, the origin of the spin-orbit interaction is different depending on the crystal state. Therefore, it is clear that the origin of the spin-orbit interaction can be controlled by controlling the crystal state. By changing the origin of the spin-orbit interaction in a single material, the spin current that can be generated can be controlled.
次に、実際に作製した試料によって、多結晶状態と単結晶状態とで、スピン流の生成量を比較した。多結晶Ｐｔ薄膜の試料は、ＡｌＯ／Ｃｏ／多結晶Ｐｔ／ＳｉＯx／Ｓｉ構造とした。また、単結晶Ｐｔ薄膜試料は、ＡｌＯ／Ｃｏ／単結晶Ｐｔ／ＭｇＯ構造とした。Ｐｔ薄膜はいずれも厚さ６ｎｍとした。また、いずれの試料にも、Ｐｔ薄膜の上に接してＣｏ薄膜を形成している。Ｐｔ薄膜で生成されるスピン流は、Ｃｏ磁気モーメントにトルクを与える。Ｃｏ磁気モーメントに加わるトルクは、Ｃｏ薄膜に作用する有効磁場として検出することができる。 Next, the amount of spin current generated was compared between the polycrystal state and the single crystal state using the actually manufactured sample. The sample of the polycrystalline Pt thin film had an AlO / Co / polycrystalline Pt / SiO x / Si structure. The single crystal Pt thin film sample had an AlO / Co / single crystal Pt / MgO structure. Each Pt thin film had a thickness of 6 nm. In each sample, a Co thin film was formed in contact with the Pt thin film. The spin current generated in the Pt thin film gives a torque to the Co magnetic moment. The torque applied to the Co magnetic moment can be detected as an effective magnetic field acting on the Co thin film.
図５は、多結晶Ｐｔ薄膜（ａ）および単結晶薄膜（ｂ）の各試料について、Ｃｏ薄膜に作用する有効磁場の電流密度依存性を測定した結果を示す特性図である。多結晶Ｐｔ薄膜（ａ）および単結晶薄膜（ｂ）のいずれも、電流密度の増大に伴い有効磁場は増大している。 FIG. 5 is a characteristic diagram showing the results of measuring the current density dependence of the effective magnetic field acting on the Co thin film for each of the polycrystalline Pt thin film (a) and the single crystal thin film (b). In both the polycrystalline Pt thin film (a) and the single crystal thin film (b), the effective magnetic field increases as the current density increases.
また、図５に示すように、多結晶Ｐｔ薄膜の方が単結晶Ｐｔ薄膜よりも同じ電流密度で比較すると大きな有効磁場を生み出していることが分かる。従って、多結晶Ｐｔの方が、単結晶Ｐｔ薄膜よりも大きなスピン軌道相互作用を有していることが明らかである。この結果より、単一材料Ｐｔを同じ膜厚にしても、Ｃｏ磁気モーメントに与えるトルクを大きく変化させることが可能であることが示された。 Also, as shown in FIG. 5, it can be seen that the polycrystalline Pt thin film produces a larger effective magnetic field when compared with the single crystal Pt thin film at the same current density. Therefore, it is clear that polycrystalline Pt has a larger spin-orbit interaction than a single-crystal Pt thin film. This result indicates that the torque applied to the Co magnetic moment can be greatly changed even when the single material Pt has the same film thickness.
以上に説明したように、本発明によれば、金属薄膜の厚さ制御や、金属薄膜の結晶状態を結晶状態または多結晶状態のいずれかにすることによりスピン軌道相互作用の強さを制御するようにしたので、より高い自由度でスピン流の状態が制御できるようになる。上述した効果は、金属であれば得られる。また、よく知られているように、スピン軌道相互作用やスピンホール効果などは大きな原子番号の金属ほど大きく、Ｐｄ，Ｔａ，Ｗ，Ｉｒ，Ｐｔ，Ｂｉなどの金属において、より顕著な効果が得られる。 As described above, according to the present invention, the thickness of the metal thin film is controlled, and the strength of the spin-orbit interaction is controlled by setting the crystalline state of the metal thin film to either the crystalline state or the polycrystalline state. As a result, the state of the spin current can be controlled with a higher degree of freedom. The above-described effects can be obtained with metals. As is well known, the spin-orbit interaction and the spin Hall effect are larger for a metal having a larger atomic number, and a more remarkable effect is obtained for a metal such as Pd, Ta, W, Ir, Pt, and Bi. Can be
例えば、磁化反転には近年、垂直磁化材料が用いられており、例えばＣｏ／Ｐｔ垂直磁化材料ではＣｏとＰｔ界面の界面磁気異方性により面直磁化を有する。これまでは、スピン軌道相互作用の強さを変えるには材料系を変える必要があり、この場合Ｐｔ界面における界面磁気異方性が利用できず、面内磁化を取ってしまうという問題があった。これに対し、本発明によれば、垂直磁化を維持しながらＰｔの結晶構造や膜厚を変えることで、スピン流の大きさも変えられる。このように、本発明によれば、スピン流生成効率と垂直磁化の両立が可能となり、将来の不揮発メモリの効率的な磁化反転が可能となる。 For example, in recent years, a perpendicular magnetization material has been used for magnetization reversal. For example, a Co / Pt perpendicular magnetization material has a plane perpendicular magnetization due to the interface magnetic anisotropy at the interface between Co and Pt. Until now, it was necessary to change the material system in order to change the strength of the spin-orbit interaction, and in this case, there was a problem that interfacial magnetic anisotropy at the Pt interface could not be used, and in-plane magnetization was obtained. . On the other hand, according to the present invention, the magnitude of the spin current can be changed by changing the crystal structure and the film thickness of Pt while maintaining the perpendicular magnetization. As described above, according to the present invention, it is possible to achieve both the spin current generation efficiency and the perpendicular magnetization, and it is possible to efficiently perform the magnetization reversal of the future nonvolatile memory.
なお、本発明は以上に説明した実施の形態に限定されるものではなく、本発明の技術的思想内で、当分野において通常の知識を有する者により、多くの変形および組み合わせが実施可能であることは明白である。 Note that the present invention is not limited to the above-described embodiments, and many modifications and combinations can be made by those having ordinary knowledge in the art without departing from the technical concept of the present invention. That is clear.
Claims (3)
前記金属薄膜の厚さによりスピン軌道相互作用の強さを制御する
ことを特徴とするスピン軌道相互作用の制御方法。 A method of controlling a spin-orbit interaction that controls the strength of the spin-orbit interaction metallic thin film composed of a single metal,
The method of spin-orbit interaction, characterized by controlling the intensity of the spin-orbit interaction by thickness before Kikin genus film.
前記金属薄膜の結晶状態を単結晶状態または多結晶状態のいずれかにすることによりスピン軌道相互作用の強さを制御する
ことを特徴とするスピン軌道相互作用の制御方法。 A method of controlling a spin-orbit interaction that controls the strength of the spin-orbit interaction metallic thin film composed of a single metal,
The method of spin-orbit interaction, characterized by controlling the intensity of the spin-orbit interaction by the crystalline state before Kikin genus thin film either monocrystalline or polycrystalline state.
前記結晶状態に加えて前記金属薄膜の厚さによりスピン軌道相互作用の強さを制御する
ことを特徴とするスピン軌道相互作用の制御方法。 The method for controlling spin-orbit interaction according to claim 2,
The method of spin-orbit interaction, characterized by controlling the intensity of the spin-orbit interaction by thickness before Kikin genus thin film in addition to the crystalline state.
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