JP6661969B2 - Anisotropic conductive film and connection structure - Google Patents
Anisotropic conductive film and connection structure Download PDFInfo
- Publication number
- JP6661969B2 JP6661969B2 JP2015211174A JP2015211174A JP6661969B2 JP 6661969 B2 JP6661969 B2 JP 6661969B2 JP 2015211174 A JP2015211174 A JP 2015211174A JP 2015211174 A JP2015211174 A JP 2015211174A JP 6661969 B2 JP6661969 B2 JP 6661969B2
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- Prior art keywords
- conductive
- particles
- conductive film
- conductive particles
- anisotropic conductive
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- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
Description
本発明は、異方性導電フィルム、及び異方性導電フィルムを用いて接続された接続構造体に関する。 The present invention relates to an anisotropic conductive film and a connection structure connected using the anisotropic conductive film.
ICチップなどの電子部品の実装に異方性導電フィルムは広く使用されており、近年では、高密度実装への適用の観点から、導電粒子捕捉効率や接続信頼性を向上させ、ショート発生率を低下させるために、絶縁性接着剤層に、導電粒子を接触又は近接して配列させた粒子部位(即ち、導電粒子ユニット)を格子状に配置し、その導電粒子ユニット同士の間隔を電極パターンに応じて変えることが提案されている(特許文献1)。 Anisotropic conductive films are widely used for mounting electronic components such as IC chips.In recent years, from the viewpoint of application to high-density mounting, conductive particle trapping efficiency and connection reliability have been improved, and the occurrence rate of short circuits has been reduced. In order to lower the particle size, the insulating adhesive layer is provided with a particle portion (i.e., a conductive particle unit) in which conductive particles are arranged in contact or close proximity to each other in a grid pattern. It has been proposed to change according to it (Patent Document 1).
しかしながら、特許文献1に記載の異方性導電フィルムでは、導電粒子ユニット同士の間隔を、該ユニットを形成する転写型の凹み同士の距離により規制しているため、異方性導電フィルムで接続する電子部品の接続端子間距離が10μm程度のファインピッチであると導電粒子を十分に捕捉できない接続端子が発生したり、ショートが発生したりし、導通信頼性に問題があった。
However, in the anisotropic conductive film described in
これに対し、本発明は、異方性導電フィルムを用いてファインピッチの接続端子を接続する場合でも、ショートの発生を抑制しつつ各接続端子に導電粒子を十分に捕捉させ、導通信頼性を向上させることを課題とする。 On the other hand, according to the present invention, even when connecting fine-pitch connection terminals using an anisotropic conductive film, the connection particles are sufficiently captured by the connection terminals while suppressing the occurrence of short-circuit, thereby improving conduction reliability. The task is to improve it.
本発明者は、特許文献1に記載の異方性導電フィルムでは、導電粒子ユニット同士の間隔が転写型の凹みの間隔として規制されており、隣接する導電粒子の最近接距離を規制したものではなく、さらにこの転写型の凹みの間隔はファインピッチの接続端子に適応していないことに対し、隣接する導電粒子ユニットの導電粒子同士の最近接距離を規制することにより上述の課題を解決できることを見出し、本発明を想到した。
In the anisotropic conductive film described in
即ち、本発明は、導電粒子が一列に配列した導電粒子ユニット、又は導電粒子が一列に配列した導電粒子ユニットと単独の導電粒子が、絶縁接着剤層中に格子状に配置された異方性導電フィルムであって、隣接する導電粒子ユニット及び単独の導電粒子から選ばれる導電粒子同士の最近接距離が、導電粒子の粒子径の0.5倍以上である異方性導電フィルムを提供する。 That is, the present invention provides an anisotropic conductive particle unit in which conductive particles are arranged in a line, or a conductive particle unit in which conductive particles are arranged in a line and a single conductive particle are arranged in a grid in an insulating adhesive layer. Provided is a conductive film, wherein the closest distance between conductive particles selected from adjacent conductive particle units and a single conductive particle is 0.5 times or more the particle diameter of the conductive particles.
また、本発明は、上述の異方性導電フィルムを用いて第1電子部品の接続端子と第2電子部品の接続端子とを異方性導電接続した接続構造体を提供する。 The present invention also provides a connection structure in which the connection terminal of the first electronic component and the connection terminal of the second electronic component are anisotropically conductively connected using the above-described anisotropic conductive film.
本発明の異方性導電フィルムによれば、導電粒子が一列に配列した導電粒子ユニット、又は導電粒子が一列に配列した導電粒子ユニットと単独の導電粒子が格子状に配置されているので、単独の導電粒子を格子状に配列した異方性導電フィルムに比して導電粒子を高密度に配置することができ、特に、隣接する導電粒子ユニット及び単独の導電粒子から選ばれる導電粒子同士の最近接距離を特定の範囲とすることにより、ショートの発生を抑制しつつ、異方性導電フィルムにおける導電粒子の配置密度を最大限に高めることができる。よって、異方性導電フィルムで接続する接続端子がファインピッチであっても各接続端子で十分に導電粒子が捕捉されるので、導通信頼性を向上させることが可能となる。 According to the anisotropic conductive film of the present invention, since the conductive particle unit in which the conductive particles are arranged in a line, or the conductive particles unit in which the conductive particles are arranged in a line and the single conductive particles are arranged in a lattice, Conductive particles can be arranged at a higher density than an anisotropic conductive film in which conductive particles are arranged in a grid pattern. In particular, the recent conductive particles selected from adjacent conductive particle units and single conductive particles can be used. By setting the contact distance in a specific range, the arrangement density of the conductive particles in the anisotropic conductive film can be maximized while suppressing occurrence of a short circuit. Therefore, even if the connection terminals connected by the anisotropic conductive film have a fine pitch, the conductive particles are sufficiently captured by each connection terminal, so that the conduction reliability can be improved.
以下、図面を参照しつつ本発明を詳細に説明する。なお、各図中、同一符号は、同一又は同等の構成要素を表している。 Hereinafter, the present invention will be described in detail with reference to the drawings. In each drawing, the same reference numerals represent the same or equivalent components.
図1Aは、本発明の一実施例の異方性導電フィルム1Aにおける導電粒子2の配置図である。この異方性導電フィルム1Aでは、2個の導電粒子2が配列した導電粒子ユニット3が絶縁接着剤層4中に格子状に配置されている。より具体的には、導電粒子ユニット3の中心が破線で示した正方格子の格子点に配置されている。
FIG. 1A is a layout view of
各導電粒子ユニット3内において、導電粒子2は接触していてもよく、間隙をあけて近接していてもよいが、各導電粒子ユニット3内における間隙の大きさの合計(一つの導電粒子ユニットがn個の導電粒子の配列で構成される場合、n−1個の間隙の大きさの合計)は、導電粒子ユニットが格子状に配列されているという本発明の効果をより高めるため、導電粒子2の粒子径Leよりも小さく、粒子径Leの1/4未満が好ましい。なお、導電粒子ユニット3内における間隙の大きさの合計は、異方性導電フィルムの長手方向に対する導電粒子ユニットの長手方向の角度θが大きい場合には、角度θが小さい場合に比して大きくすることができ、後述する図3で示すように、この角度θが90°の場合には、導電粒子2の粒子径Leの1/2であっても本発明の効果を得ることができる。
In each
また、本発明において、導電粒子2の粒子径Leは揃っている方が好ましい。そこで、特に断らない限り、本発明において導電粒子2の粒子径Leは、異方性導電フィルムを構成する導電粒子2の平均粒子径を意味する。
In the present invention, it is preferable that the particle diameters Le of the
各導電粒子ユニット3の長手方向の向きは揃っており、異方性導電フィルム1Aの長手方向D1に対して傾いている。より具体的には、異方性導電フィルム1Aの長手方向に対する導電粒子ユニット3の長手方向の角度θが45°となっている。また、各導電粒子ユニット3の長手方向が、導電粒子ユニット3の格子状配列を形成する直線(図中の破線で示した直線)と重なっている。このように導電粒子ユニット3の長手方向を異方性導電フィルム1Aの長手方向に対して傾斜させると、異方性導電フィルム1Aを用いて電子部品の接続端子を接続する場合に、接続端子20における導電粒子2の捕捉数を高めることができる。
The longitudinal directions of the
図1Bは、異方性導電フィルム1Aを導電粒子ユニット3の長手方向に切断したA−A断面図である。同図に示すように、導電粒子2は、絶縁接着剤層4中に一定の深さで埋まっている。
FIG. 1B is an AA cross-sectional view of the anisotropic
本発明の異方性導電フィルム1Aでは、隣接する導電粒子ユニット3の導電粒子同士の最近接距離La(後述するように、格子点に単独の導電粒子も存在する場合には、隣接する導電粒子ユニット及び単独の導電粒子から選ばれる導電粒子同士の最近接距離La)が、異方性導電フィルム1Aにおける導電粒子2の配置密度をできる限り高め、かつ異方性導電フィルム1Aで第1、第2の電子部品を異方性導電接続した場合の端子間のショートを防止する点から、導電粒子2の粒子径の0.5倍以上である。ここで、最近接距離Laを導電粒子2の粒子径の0.5倍以上とするのは次の理由による。即ち、異方性導電フィルム1Aを用いて第1、第2の電子部品を異方性導電接続すると対向する第1、第2の電子部品の接続端子間で導電粒子2は潰れ、図1Aにおいて破線円で示すように導電粒子2の粒子径は接続前の粒子径の1.2〜1.3倍になる。そこで、隣接する導電粒子ユニット3の導電粒子同士であって最近接距離にあるものが双方とも異方性導電接続時に最大限潰れたとしても、それらの間に少なくとも粒子径の約1/4の間隙があくことを確保してショートの発生を防止するため、隣接する導電粒子ユニット同士の最近接距離Laを粒子径の0.5倍以上とする。
In the anisotropic
また、本発明においては、最近接距離Laの異方性導電フィルム長手方向D1の長さLa1を導電粒子2の粒子径Leの10倍以下とすることが好ましい。これは導電粒子の個数密度を一定値以上にすることが接続端子20で導電粒子の捕捉を安定して行えることにつながり、ファインピッチ接続の安定性に寄与するためである。
Further, in the present invention, the length La1 of the anisotropic conductive film in the longitudinal direction D1 of the closest distance La is preferably 10 times or less the particle diameter Le of the
さらに、導電粒子ユニット3の格子状の配列態様によっては、導電粒子ユニット3の異方性導電フィルム長手方向D1の外接線が、同方向D1で隣接する導電粒子ユニット3とオーバーラップする(外接線が隣接するユニットの導電粒子を貫く)ことが、導電粒子の個数密度を高めてファインピッチにおける接続の安定性に寄与するので好ましい。
Furthermore, depending on the grid-shaped arrangement of the
なお、図1Aに示した異方性導電フィルム1Aではこの最近接距離Laの方向が導電粒子ユニット3の長手方向となっているが、本発明において、最近接距離Laの方向は導電粒子ユニット3の長手方向に限られない。
In the anisotropic conductive film 1A shown in FIG. 1A, the direction of the closest distance La is the longitudinal direction of the
異方性導電フィルム1Aを接続端子間の異方性導電接続に使用する場合、接続前後の導電粒子の比較がし易くなる点から、異方性導電フィルム1Aの長手方向D1を、図1Aに二点鎖線で示した接続端子20の配列方向(接続端子20の短手方向)に合わせることが好ましい。言い換えると、異方性導電フィルム1Aの短手方向D2を接続端子20の長手方向に合わせる。この場合に、各導電粒子ユニット3の異方性導電フィルム1Aの長手方向D1の長さLbと、異方性導電フィルム1Aで接続する接続端子20間の距離Lxと、導電粒子の粒子径Leが、次式の関係を満たすようにすることが好ましい。
Lx>(Lb+Le)
When the anisotropic conductive film 1A is used for anisotropic conductive connection between connection terminals, the longitudinal direction D1 of the anisotropic conductive film 1A is shown in FIG. It is preferable to match the arrangement direction of the
Lx> (Lb + Le)
また、隣接する導電粒子ユニット3の導電粒子2であって、異方性導電フィルム1Aの長手方向D1で重なる最近接導電粒子(即ち、導電粒子2を異方性導電フィルム1Aの長手方向に投影した場合の投影像が重なる導電粒子であって最も近接したもの)同士の該長手方向D1の距離Lcが導電粒子の粒子径の0.5倍以上となるようにすることが好ましい。即ち、この距離Lcは、導電粒子ユニット3の格子状の配列自体は同じでも、異方性導電フィルム1Aの長手方向D1に対する導電粒子ユニット3の長手方向の角度θに応じて変化する。そのため、角度θの大きさによらず、隣接する接続端子20間のショートを防止するため、距離Lcとして導電粒子の粒子径の0.5倍以上を確保することが好ましい。
In addition, the
本発明において、導電粒子2の粒子径は、短絡防止と接続端子間の接続の安定性の点から好ましくは1〜10μm、より好ましくは2〜4μmである。また、導電粒子2の配置密度は、好ましくは2000〜250000個/mm2、より好ましくは4000〜100000個/mm2である。導電粒子の配置密度は、導電粒子ユニット3を構成する導電粒子2の数と導電粒子ユニット3の配置によって適宜調整される。
In the present invention, the particle diameter of the
本発明において、導電粒子2自体の構成や、絶縁接着剤層4の層構成又は構成樹脂については特に制限がない。即ち、導電粒子2としては公知の異方性導電フィルムに用いられているものを適宜選択して使用することができる。例えば、ニッケル、コバルト、銀、銅、金、パラジウムなどの金属粒子、金属被覆樹脂粒子などが挙げられる。2種以上を併用することもできる。
In the present invention, the configuration of the
絶縁接着剤層4としては、公知の異方性導電フィルムで使用される絶縁性樹脂層を適宜採用することができる。例えば、アクリレート化合物と光ラジカル重合開始剤とを含む光ラジカル重合型樹脂層、アクリレート化合物と熱ラジカル重合開始剤とを含む熱ラジカル重合型樹脂層、エポキシ化合物と熱カチオン重合開始剤とを含む熱カチオン重合型樹脂層、エポキシ化合物と熱アニオン重合開始剤とを含む熱アニオン重合型樹脂層等を使用することができる。また、これらの樹脂層は、必要に応じて、それぞれ重合したものとすることができる。また、絶縁接着剤層4を、複数の樹脂層から形成してもよい。
As the insulating
さらに、絶縁接着剤層4には、必要に応じてシリカ微粒子、アルミナ、水酸化アルミ等の絶縁性フィラーを加えても良い。絶縁性フィラーの配合量は、絶縁接着剤層を形成する樹脂100質量部に対して3〜40質量部とすることが好ましい。これにより、異方性導電接続時に絶縁接着剤層4が溶融しても、溶融した樹脂で導電粒子2が不用に移動することを抑制することができる。
Further, an insulating filler such as silica fine particles, alumina, aluminum hydroxide, etc. may be added to the insulating
絶縁接着剤層4に導電粒子2が上述の配置で固定されている異方性導電フィルムの製造方法としては、導電粒子ユニット3の配置に対応した凹みを有する型を機械加工やレーザー加工、フォトリソグラフィなど公知の方法で作製し、その型に導電粒子を入れ、その上に絶縁接着剤層形成用組成物を充填し、硬化させ、型から取り出し、必要に応じてさらに絶縁性接着剤層を積層すればよい。なお、導電粒子2を入れる型としては、一旦剛性の強い型を作製し、その型を利用して、剛性の低い材質で形成した型を使用してもよい。
As a method for manufacturing an anisotropic conductive film in which the
図2Aは、異方性導電フィルム1Aの製造において、導電粒子2を上述の配置で固定するために使用する型10の平面図であり、図2Bは型10に導電粒子2を充填した状態のB−B断面図である。この型10は、導電粒子2を2個充填し得る矩形の凹み11を有する。本実施例の異方性導電フィルム1Aでは凹み11の長手方向に隣接する凹み11同士の距離Lhが、隣接する導電粒子ユニット3同士の最近接距離Laに対応するため、この距離Lhは導電粒子2の粒子径の0.5倍以上とする。また、凹み11の長手方向の長さLiは、凹み11に充填する導電粒子2の数によるが、凹み11に導電粒子2を充填した後の間隙s1、s2、s3の、凹み11の長手方向の長さの合計Ljが導電粒子2の粒子径の1/4未満となる長さとなるようにすることが好ましい。これは、導電粒子ユニットが格子状に配列されているという本発明の効果をより高めるため、導電粒子が導電粒子ユニットとして格子状に配列されている状態を、導電粒子がユニットを形成せずに格子状に配列されている状態に対して明確に区別できるようにするためである。
FIG. 2A is a plan view of a
一方、絶縁接着剤層4に導電粒子2を上述の配置に置くために、絶縁接着剤層形成用組成物層の上に、貫通孔が所定の配置で形成されている部材を設け、その上から導電粒子2を供給し、貫通孔を通過させるなどの方法でもよい。
On the other hand, in order to place the
本発明の異方性導電フィルムは種々の態様をとることができる。例えば、図3に示した異方性導電フィルム1B、及び図4に示した異方性導電フィルム1Cは、それぞれ導電粒子2自体の配列は図1Aに示した異方性導電フィルム1Aと同様に、導電粒子ユニット3が2個の導電粒子2から形成され、各導電粒子ユニット3の長手方向の向きが揃い、導電粒子ユニット3が正方格子状に配置されているが、図3に示した異方性導電フィルム1Bでは、異方性導電フィルム1Bの長手方向に対する導電粒子ユニット3の長手方向の角度θが90°であり、図4に示した異方性導電フィルム1Cでは、異方性導電フィルム1Cの長手方向に対する導電粒子ユニット3の長手方向の角度θが0°である。
The anisotropic conductive film of the present invention can take various aspects. For example, in the anisotropic conductive film 1B shown in FIG. 3 and the anisotropic conductive film 1C shown in FIG. 4, the arrangement of the
ショート防止の観点からは、角度θは90°に近い方が好ましい。また、異方性導電接続における導電粒子の捕捉の観点からは0°に近い方が好ましい。そのため、各導電粒子ユニット3を形成する導電粒子数と各導電粒子ユニット3の長手方向の角度θを揃える場合には、ショート防止と導電粒子の捕捉を両立させる観点から角度θは6〜84°が好ましく、16〜74°がより好ましい。
From the viewpoint of preventing short circuit, the angle θ is preferably closer to 90 °. Further, from the viewpoint of capturing the conductive particles in the anisotropic conductive connection, it is preferable that the angle is closer to 0 °. Therefore, when the number of conductive particles forming each
図5に示した異方性導電フィルム1Dは、図1Aに示した異方性導電フィルム1Aにおいて、導電粒子ユニット3の中心点が6方格子を形成するように導電粒子ユニット3を配置し、異方性導電フィルム1Dの長手方向に対する導電粒子ユニット3の長手方向の角度θを30°にしたものである。
In the anisotropic conductive film 1D shown in FIG. 5, the
この他、本発明において導電粒子ユニット3の格子状の配列は種々の態様をとることができる。例えば、導電粒子ユニット3を斜方格子状、長方格子状等に配置してもよい。
In addition, in the present invention, the grid-like arrangement of the
図6に示した異方性導電フィルム1Eは、3個の導電粒子2を一列に配列したものから各導電粒子ユニット3を形成し、各導電粒子ユニット3を斜方配列に配置し、異方性導電フィルム1Eの長手方向に対する各導電粒子ユニット3の長手方向の角度θを45°にしたものである。
In the anisotropic conductive film 1E shown in FIG. 6, each
このように導電粒子ユニット3を構成する導電粒子2の数は2個に限られず、導電粒子径、接続する端子間距離、端子のサイズおよびレイアウト等に応じて定めることができるため特に上限はない。ファインピッチ化や小面積化が進んでも、導電粒子径に応じた十分な端子間距離があればショート発生のリスクは減るからである。ショート発生リスクをより低減させて、接続構造体の製造時の品質を安定させる点から、格子状に配置されている導電粒子ユニットの間に、導電粒子ユニットを形成しない単独の導電粒子2aを存在させても良く、また、一つの導電粒子ユニット3を構成する導電粒子2を2〜8個とすることができ、より好ましくは2〜5個とする。
As described above, the number of the
例えば、図7に示す異方性導電フィルム1Fのように正方格子状に配置されている導電粒子ユニット3の単位格子の中心に、導電粒子ユニットを形成しない単独の導電粒子2aを存在させても良い。これにより、ファインピッチの接続端子で異方性導電フィルムを使用する場合でも、接続端子における導電粒子の捕捉性を向上させると共にショートの回避を可能とすることができる。
For example, a single conductive particle 2a which does not form a conductive particle unit may be present at the center of the unit lattice of the
また、図8に示す異方性導電フィルム1Gのように、導電粒子ユニットを形成する導電粒子数が異なる複数通りの導電粒子ユニット3i、3kを格子状に配置し、格子点以外に単独の導電粒子2aを配置してもよい。なお、導電粒子ユニットを形成する導電粒子数が異なる複数通りの導電粒子ユニット3i、3kを格子状に配置する場合、各導電粒子ユニット3i、3kの中心を格子点に配置すればよい。 In addition, as in an anisotropic conductive film 1G shown in FIG. 8, a plurality of conductive particle units 3i and 3k having different numbers of conductive particles forming conductive particle units are arranged in a grid, and a single conductive particle unit other than the lattice points is used. Particles 2a may be arranged. When a plurality of conductive particle units 3i and 3k having different numbers of conductive particles forming the conductive particle unit are arranged in a lattice, the center of each of the conductive particle units 3i and 3k may be arranged at a lattice point.
導電粒子ユニットを形成する導電粒子数が異なる複数通りの導電粒子ユニットを格子状に配置する場合に、図9に示す異方性導電フィルム1Hのように、各導電粒子ユニット3i、3j、3kの長手方向を揃え、かつその短手方向に配置される導電粒子ユニットの導電粒子数が、漸次増加又は減少を繰り返すようにしてもよい。なお、図9には、3通りの導電粒子ユニット3i、3j、3kの長手方向を異方性導電フィルム1Hの長手方向としたが、各導電粒子ユニット3i、3j、3kの長手方向が揃っていれば、その長手方向は任意の方向とすることができる。 When a plurality of types of conductive particle units forming the conductive particle units and having different numbers of conductive particles are arranged in a grid pattern, each of the conductive particle units 3i, 3j, and 3k, as in the anisotropic conductive film 1H shown in FIG. The number of conductive particles of the conductive particle unit arranged in the longitudinal direction and arranged in the lateral direction may gradually increase or decrease. In FIG. 9, the three longitudinal directions of the conductive particle units 3i, 3j, and 3k are the longitudinal directions of the anisotropic conductive film 1H. However, the longitudinal directions of the conductive particle units 3i, 3j, and 3k are aligned. If so, the longitudinal direction can be any direction.
このように導電粒子ユニットを形成する導電粒子数が異なる複数通りの導電粒子ユニットを設けることにより、小面積のバンプにおける導電粒子の補足効率を向上させ、かつショートの発生を抑えることができるので、より一層ファインピッチの接続に対応させることができる。 By providing a plurality of types of conductive particle units having different numbers of conductive particles forming the conductive particle unit in this manner, the efficiency of capturing conductive particles in small-area bumps can be improved, and the occurrence of short circuits can be suppressed. It is possible to cope with fine pitch connection.
本発明においては、導電粒子ユニットと単独の導電粒子とが格子状に配置されてもよい。言い換えると、単独の導電粒子が格子点に存在してもよい。例えば、図10に示す異方性導電フィルム1Iのように、導電粒子ユニットを形成する導電粒子数が異なる3通りの導電粒子ユニット3i、3j、3kと、単独の導電粒子2aとを格子状に配置することができる。この場合、導電粒子ユニット3i、3j、3k及び単独の導電粒子2aから選ばれる導電粒子同士の最近接距離Laを導電粒子2、2aの導電粒子径の0.5倍以上とする。
In the present invention, the conductive particle unit and the single conductive particles may be arranged in a lattice. In other words, a single conductive particle may exist at a lattice point. For example, as in an anisotropic conductive film 1I shown in FIG. 10, three types of conductive particle units 3i, 3j, and 3k having different numbers of conductive particles forming conductive particle units, and a single conductive particle 2a are formed in a lattice shape. Can be arranged. In this case, the closest distance La between the conductive particles selected from the conductive particle units 3i, 3j, and 3k and the single conductive particle 2a is set to 0.5 times or more of the conductive particle diameter of the
導電粒子数が異なる複数通りの導電粒子ユニットと単独の導電粒子とを格子状に配置するにあたり、図10に示した異方性導電フィルム1Iのように、異方性導電フィルムの短手方向に配列した導電粒子ユニット3i、3j、3k及び単独の導電粒子2aのそれぞれを形成する導電粒子数が、漸次増加及び減少を繰り返すようにしてもよく、図11に示した異方性導電フィルム1Jのように、漸次増加又は減少を繰り返すようにしてもよい。図11示すように導電粒子が漸次増加又は減少を繰り返す場合、異方性導電フィルム内の小領域における導電粒子の個数密度のばらつきが少なくなる。これにより、例えば異方性導電フィルムの貼り付け時にフィルムの貼り付け位置が接続端子の長手方向に微小に(フィルム幅の数%としても数十μm以上)ずれたとしても、接続端子に捕捉される導電粒子の個数のばらつきが少なくなり、位置ずれの無い場合とある場合との導電粒子にかかる押圧力のばらつきが少なくなるので好ましい。 In arranging a plurality of types of conductive particle units having different numbers of conductive particles and a single conductive particle in a grid pattern, as in the anisotropic conductive film 1I shown in FIG. The number of conductive particles forming each of the arranged conductive particle units 3i, 3j, 3k and the single conductive particle 2a may be gradually increased and decreased. Thus, the gradual increase or decrease may be repeated. When the conductive particles repeatedly increase or decrease as shown in FIG. 11, the variation in the number density of the conductive particles in a small region in the anisotropic conductive film is reduced. Thereby, for example, even when the attachment position of the film is slightly shifted (several% of the film width or tens of μm or more) in the longitudinal direction of the connection terminal when attaching the anisotropic conductive film, the film is captured by the connection terminal. This is preferable because the variation in the number of conductive particles is reduced, and the variation in the pressing force applied to the conductive particles between the case where there is no displacement and the case where there is no displacement is reduced.
ここで、ファインピッチの接続端子としては、その接続面の大きさが、幅4〜60μm、長さ400μm以下(下限は幅と等倍)のもの、もしくは接続面の幅が導電粒子径の4倍未満もしくは導電粒子ユニット3の長手方向の長さの2倍未満のもの、接続端子間の最小距離が、例えば8〜30μmのものを挙げることができる。また、接続端子の面積が小さい場合に接続端子間距離が相対的に大きくなることがあるため、上述の端子間距離に限定されるものではない。なお、端子面積を小さくすることは、高集積化など技術上の理由以外に、端子として使用する金属(Auなど)の削減になるためコストの面でメリットがあるので、小さい端子面積に対応できる異方性導電フィルムの意義は大きい。
Here, as the fine pitch connection terminal, the size of the connection surface is 4 to 60 μm in width and 400 μm or less in length (the lower limit is equal to the width), or the width of the connection surface is 4 μm of the conductive particle diameter. It is less than twice or less than twice the length of the
導電粒子ユニット3を構成する導電粒子を3個以上とする場合、ファインピッチにおける導電粒子の捕捉性を向上させる点から、各導電粒子ユニット3において導電粒子は一列に配列させる。
When the number of the conductive particles constituting the
図12に示した異方性導電フィルム1Kは、導電粒子ユニット3の長手方向を、千鳥格子状に異ならせたものである。より具体的には、図3に示した異方性導電フィルム1Bと同様に導電粒子ユニット3(3a、3b)の中心点は正方格子状に配置されているが、導電粒子ユニット3内の導電粒子2の配列方向が、異方性導電フィルム1Gの長手方向に対して0°の導電粒子ユニット3aと、90°の導電粒子ユニット3bを千鳥格子状に配置したものである。
The anisotropic
このように導電粒子ユニット3における導電粒子2の配列方向が、互いに異なる第1の方向と第2の方向をとることによっても、ファインピッチの接続端子20における導電粒子の捕捉性の向上とショート回避を両立させることができる。
As described above, the arrangement direction of the
図13Aに示した異方性導電フィルム1Lは、平面視では導電粒子2の配置が図1に示した異方性導電フィルム1Aと同様であるが、図13Bに示すC−C断面図のように、異方性導電フィルム1Lの厚み方向の第1の深さに導電粒子2が配置されている第1の導電粒子ユニット3pと、第2の深さに導電粒子2が配置されている第2の導電粒子ユニット3qとが、導電粒子ユニット3p、3qの短手方向に交互に配置されている。
The anisotropic conductive film 1L shown in FIG. 13A has the same arrangement of the
このような異方性導電フィルム1Lの製造方法としては、例えば図14Aに示すように、第1の導電粒子ユニット3pに導電粒子を配置するための第1の型10pと第2の導電粒子ユニット3qに導電粒子を配置するための第2の型10qとを使用して、それぞれの型10p、10qの凹み11に導電粒子2を充填し、図14Bに示すように、それぞれの型10p、10q上に、剥離シート6上に形成した絶縁接着剤層形成用組成物層5を配置してその絶縁接着剤層形成用組成物層5を型10p、10qの凹み11に押し込み、乾燥、加熱等により絶縁接着剤層形成用組成物層5を半硬化させる。次に、半硬化させた絶縁接着剤層形成用組成物層5を型10p、10qから外し、図14Cに示すようにそれらを対向させ、加圧し、加熱又は紫外線照射等により完全硬化させる。こうして図13Bに示す断面の異方性導電フィルム1Lを得ることができる。
As a method for manufacturing such an anisotropic conductive film 1L, for example, as shown in FIG. 14A, a first mold 10p for disposing conductive particles in a first
このように第1の型10pと第2の型10qを使用する製造方法によれば、単一の型を使用する場合に比して各型における凹み11の配置ピッチを広げることができるので、異方性導電フィルム1Lの生産性を向上させることができる。 As described above, according to the manufacturing method using the first mold 10p and the second mold 10q, the arrangement pitch of the recesses 11 in each mold can be increased as compared with the case where a single mold is used. The productivity of the anisotropic conductive film 1L can be improved.
本発明の異方性導電フィルムは、ICチップ、ICモジュール、FPCなどの第1電子部品の接続端子と、FPC、ガラス基板、プラスチック基板、リジット基板、セラミック基板などの第2電子部品の接続端子とを異方性導電接続する際に好ましく使用することができる。このようにして得られる接続構造体も本発明の一部である。また、ICチップやICモジュールをスタックして第1電子部品同士を異方性導電接続することもできる。このようにして得られる接続構造体も本発明の一部である。 The anisotropic conductive film of the present invention includes connection terminals for a first electronic component such as an IC chip, an IC module, and an FPC, and connection terminals for a second electronic component such as an FPC, a glass substrate, a plastic substrate, a rigid substrate, and a ceramic substrate. Can be preferably used for anisotropic conductive connection. The connection structure thus obtained is also part of the present invention. Further, the first electronic components can be anisotropically conductively connected by stacking IC chips or IC modules. The connection structure thus obtained is also part of the present invention.
本発明の異方性導電フィルムを用いて電子部品の接続端子を接続する場合、図15Aの(a)に示すように、導電粒子ユニット3を構成する導電粒子2が、接続端子20の縁に載らない位置で接続されることが好ましいが、同図(b)に示すように、接続端子20の端子間距離Lxと、該端子間距離の方向の導電粒子ユニット3の長さLdと、導電粒子2の粒子径Leとの関係が、
Lx>(Ld+Le)
を満たすように接続端子20の端子間距離Lxに対し、該端子間距離Lxの方向の導電粒子ユニット3の長さLdと導電粒子2の粒子径Leを調整すればよい。
When connecting the connection terminals of the electronic component using the anisotropic conductive film of the present invention, the
Lx> (Ld + Le)
What is necessary is to adjust the length Ld of the
これに対し、図15Bの(a)に示すように、
Lx>(Ld+Le)
が満たされないと接続端子20間でショートが発生し易くなる。しかしながら、導電粒子ユニット3を構成する導電粒子2の粒子径Leや導電粒子2の配列数が等しくても、同図(b)に示すように、端子間距離Lxの方向に対して導電粒子ユニット3の長手方向を傾け、端子間距離Lxの方向の導電粒子ユニット3の長さLdを短くし、上述の式が満たされるようにすればよい。
On the other hand, as shown in FIG.
Lx> (Ld + Le)
Is not satisfied, a short circuit easily occurs between the
また、図15Cに示すように、導電粒子2の粒子径Leを小さくすることにより上述の式が満たされるようにしても良い。
Further, as shown in FIG. 15C, the above expression may be satisfied by reducing the particle diameter Le of the
以下、実施例により本発明を具体的に説明する。
実施例1〜11及び比較例1、2
<異方導性導電フィルムの製造の概要>
導電粒子ユニットの中心の配列が長方格子を形成し、一つの導電粒子ユニットあたりの導電粒子の個数(以下、連結個数という)、導電粒子の粒子径(μm)、導電粒子ユニットの最大長(μm)、異方性導電フィルムの長手方向に対する導電粒子ユニットの長手方向の角度θ、隣接する導電粒子ユニットの導電粒子同士の最近接距離La(μm)、導電粒子の配置密度(個/mm2)が表1に示す数値の異方性導電フィルムを製造した。
Hereinafter, the present invention will be specifically described with reference to examples.
Examples 1 to 11 and Comparative Examples 1 and 2
<Summary of production of anisotropic conductive film>
The arrangement of the centers of the conductive particle units forms a rectangular lattice, the number of conductive particles per conductive particle unit (hereinafter, referred to as the number of connections), the particle diameter of conductive particles (μm), and the maximum length of conductive particle units ( μm), the angle θ in the longitudinal direction of the conductive particle unit with respect to the longitudinal direction of the anisotropic conductive film, the closest distance La (μm) between the conductive particles of adjacent conductive particle units, the arrangement density of the conductive particles (pieces / mm 2 ) Produced anisotropic conductive films having the numerical values shown in Table 1.
この場合、導電粒子としては、次のように作製した導電粒子(粒子径2μm、3μm又は6μm)を使用した。
In this case, conductive particles (
<導電粒子(粒子径2μm、3μm又は6μm)の作製>
ジビニルベンゼン、スチレン、ブチルメタクリレートの混合比を調整した溶液に、重合開始剤としてベンゾイルパーオキサイドを投入して高速で均一攪拌しながら加熱を行い、重合反応を行うことにより微粒子分散液を得た。前記微粒子分散液をろ過し減圧乾燥することにより微粒子の凝集体であるブロック体を得た。更に、前記ブロック体を粉砕し分級することにより、平均粒子径2μm、3μmおよび6μmのジビニルベンゼン系樹脂粒子を得た。
<Preparation of conductive particles (
Benzoyl peroxide was added as a polymerization initiator to a solution in which the mixing ratio of divinylbenzene, styrene, and butyl methacrylate was adjusted, and the mixture was heated with uniform stirring at high speed, and a polymerization reaction was performed to obtain a fine particle dispersion. The fine particle dispersion was filtered and dried under reduced pressure to obtain a block as an aggregate of fine particles. Further, the block was pulverized and classified to obtain divinylbenzene resin particles having an average particle diameter of 2 μm, 3 μm and 6 μm.
このようにして得た、ジビニルベンゼン系樹脂粒子(5g)に、パラジウム触媒を浸漬法により担持させた。次いで、この樹脂粒子に対し、硫酸ニッケル六水和物、次亜リン酸ナトリウム、クエン酸ナトリウム、トリエタノールアミン及び硝酸タリウムから調製された無電解ニッケルメッキ液(pH12、メッキ液温50℃)を用いて無電解ニッケルメッキを行い、ニッケルメッキ層(金属層)が表面に形成されたニッケル被覆樹脂粒子を導電粒子として得た。得られた導電粒子の平均粒子径は2μm、3μmおよび6μmであった。 The thus obtained divinylbenzene resin particles (5 g) were loaded with a palladium catalyst by a dipping method. Next, an electroless nickel plating solution (pH 12, plating solution temperature 50 ° C.) prepared from nickel sulfate hexahydrate, sodium hypophosphite, sodium citrate, triethanolamine and thallium nitrate was applied to the resin particles. And electroless nickel plating was performed to obtain nickel-coated resin particles having a nickel plating layer (metal layer) formed on the surface as conductive particles. The average particle diameter of the obtained conductive particles was 2 μm, 3 μm and 6 μm.
塩化金酸ナトリウム10gをイオン交換水1000mLに溶解させた溶液に、上述のニッケル被覆樹脂粒子12gを混合して水性懸濁液を調整した。得られた水性懸濁液に、チオ硫酸アンモニウム15g、亜硫酸アンモニウム80g、及びリン酸水素アンモニウム40gを投入することにより金メッキ浴を調整した。得られた金メッキ浴にヒドロキシルアミン4gを投入後、アンモニアを用いて金メッキ浴のpHを9に調整し、そして浴温を60℃に15〜20分程度維持することにより、平均粒子径2μm、3μmおよび6μmの金/ニッケル被覆樹脂粒子を得、これを導電粒子とした。 An aqueous suspension was prepared by mixing 12 g of the above-mentioned nickel-coated resin particles with a solution of 10 g of sodium chloroaurate dissolved in 1000 mL of ion-exchanged water. The gold plating bath was adjusted by adding 15 g of ammonium thiosulfate, 80 g of ammonium sulfite, and 40 g of ammonium hydrogen phosphate to the obtained aqueous suspension. After charging 4 g of hydroxylamine to the obtained gold plating bath, the pH of the gold plating bath was adjusted to 9 using ammonia, and the bath temperature was maintained at 60 ° C. for about 15 to 20 minutes, whereby the average particle diameter was 2 μm and 3 μm. And 6 μm gold / nickel-coated resin particles were obtained, which were used as conductive particles.
<異方性導電フィルムの製造>
この導電粒子が絶縁接着剤層中に表1の配列で含まれている異方性導電フィルムを次のようにして製造した。まず、フェノキシ樹脂(新日鉄住金化学(株)、YP−50)60質量部、エポキシ樹脂(三菱化学(株)、jER828)40質量部、カチオン重合開始剤(潜在性硬化剤)(三新化学工業(株)、SI−60L)2質量部を含有する熱重合性の絶縁性樹脂組成物を調製し、これをフィルム厚さ50μmのPETフィルム上に塗布し、80℃のオーブンにて5分間乾燥させ、PETフィルム上に厚み20μmの粘着層を形成した。
<Production of anisotropic conductive film>
An anisotropic conductive film in which the conductive particles were contained in the insulating adhesive layer in the arrangement shown in Table 1 was produced as follows. First, 60 parts by mass of a phenoxy resin (Nippon Steel & Sumikin Chemical Co., Ltd., YP-50), 40 parts by mass of an epoxy resin (Mitsubishi Chemical Corporation, jER828), and a cationic polymerization initiator (latent curing agent) (Sanshin Chemical Industry) (Co., Ltd., SI-60L) A thermopolymerizable insulating resin composition containing 2 parts by mass was prepared, applied on a PET film having a film thickness of 50 μm, and dried in an oven at 80 ° C. for 5 minutes. Then, an adhesive layer having a thickness of 20 μm was formed on the PET film.
次に、凸みの配置が、表1の導電粒子ユニットの配置となる金型を作製し、透明性樹脂のペレットを溶融させてその金型に流し込み、冷やして固めることで凹みが表1の導電粒子ユニットの配置となる樹脂型を作製し、この樹脂型に導電粒子を充填し、その上に上述の粘着層を被せ、その粘着層を紫外線照射により硬化させ、型から剥がし、異方性導電フィルムを製造した。 Next, a mold in which the arrangement of the protrusions is the arrangement of the conductive particle units shown in Table 1 is prepared, the pellets of the transparent resin are melted, poured into the mold, cooled, and solidified, whereby the dents shown in Table 1 are formed. Prepare a resin mold in which the conductive particle unit is arranged, fill the resin mold with conductive particles, cover the adhesive layer described above, cure the adhesive layer by ultraviolet irradiation, peel off from the mold, A conductive film was manufactured.
評価
(a)導通抵抗、(b)ショート数、(c)バンプ1個当たりの粒子最小捕捉数、(d)バンプ間の粒子状態を次のように評価した。結果を表1A及び表1Bに示す。
Evaluation
(a) the conduction resistance, (b) the number of shorts, (c) the minimum number of particles captured per bump, and (d) the state of particles between bumps were evaluated as follows. The results are shown in Tables 1A and 1B.
(a)導通抵抗
有効接続面積(バンプと基板とが対峙する面積)が異なる3通りの評価用接続物の導通抵抗を接続した。
(a-1)導通抵抗(有効接続面積400μm2)
各実施例及び比較例の異方性導電フィルムを、導通抵抗評価用ICとガラス基板の間に挟み、加熱加圧(180℃、80MPa、5秒)して各評価用接続物を得、この評価用接続物の導通抵抗はデジタルマルチメータを用いて4端子法で2mAの電流を通電したときの値で測定した。1Ω未満であれば、実用上問題はない。
ここで、この各評価用ICとガラス基板は、それらの端子パターンが対応しており、サイズは次の通りである。
また、異方性導電フィルムを用いて評価用ICとガラス基板を接続する場合、異方性導電フィルムの長手方向をバンプの短手方向(端子間距離の方向)に合わせた。結果を表1Aに示す。
(a) Conduction Resistance The conduction resistances of three types of connection for evaluation having different effective connection areas (areas where the bump and the substrate face each other) were connected.
(A-1) Conduction resistance (effective connection area 400 μm 2 )
The anisotropic conductive film of each example and comparative example was sandwiched between an IC for conducting resistance evaluation and a glass substrate, and heated and pressed (180 ° C., 80 MPa, 5 seconds) to obtain a connection for each evaluation. The conduction resistance of the connection for evaluation was measured at a value when a current of 2 mA was applied by a four-terminal method using a digital multimeter. If it is less than 1Ω, there is no practical problem.
Here, the terminal patterns correspond to the evaluation ICs and the glass substrate, and the sizes are as follows.
When the evaluation IC and the glass substrate were connected using the anisotropic conductive film, the longitudinal direction of the anisotropic conductive film was adjusted to the short direction of the bumps (direction of the distance between terminals). The results are shown in Table 1A.
導通抵抗評価用IC
外径 0.7×20mm
厚み 0.2mm
バンプ仕様 金メッキ、高さ12μm、サイズ10×40μm、バンプ間距離10μm
Conduction resistance evaluation IC
Outer diameter 0.7 × 20mm
Thickness 0.2mm
Bump specifications Gold plating, height 12 μm,
ガラス基板
ガラス材質 コーニング社製
外径 30×50mm
厚み 0.5mm
電極 ITO配線
Glass substrate Glass material Corning external diameter 30 × 50mm
Thickness 0.5mm
Electrode ITO wiring
(a-2)導通抵抗(有効接続面積300μm2)及び(a-3)導通抵抗(有効接続面積200μm2)
導通抵抗評価用ICのバンプ仕様を以下のものに変更し、評価用ICのアライメントをバンプの短手(幅)方向に6μmおよび8μm意図的にずらし、有効接続面積を300μm2又は200μm2とする以外は、(a-1)と同様にして接続して評価用接続物を得、その導通抵抗を(a-1)と同様に測定した。結果を表1Bに示す。なお、表1Bには、実質的なバンプの大きさとICのバンプ−バンプ間スペース(即ち、同一ICのバンプ間での水平方向の導体距離)の数値を示した。
バンプ仕様 金メッキ、高さ12μm、サイズ12×50μm、バンプ間距離10μm
(A-2) Conduction resistance (effective connection area 300 μm 2 ) and (a-3) Conduction resistance (effective connection area 200 μm 2 )
The bump specification of the conduction resistance evaluation IC was changed to the following, the alignment of the evaluation IC was intentionally shifted by 6 μm and 8 μm in the short (width) direction of the bump, and the effective connection area was set to 300 μm 2 or 200 μm 2 . Other than the above, connection was made in the same manner as in (a-1) to obtain a connection article for evaluation, and the conduction resistance was measured in the same manner as in (a-1). The results are shown in Table 1B. In Table 1B, the values of the substantial bump size and the space between the bumps of the IC (that is, the horizontal conductor distance between the bumps of the same IC) are shown.
Bump specifications Gold plating, height 12μm, size 12 × 50μm, distance between bumps 10μm
(b)ショート数
実施例1〜11及び比較例1〜2の導通抵抗評価用接続物のバンプ間100個においてショートしているチャンネル数を計測し、ショート数とした。
(b) Number of Shorts The number of short-circuited channels was measured between the 100 bumps of the conductive resistance evaluation connectors of Examples 1 to 11 and Comparative Examples 1 and 2, and the number was defined as the number of shorts.
なお、次のショート発生率評価用ICを用い、実施例1〜11の異方性導電フィルムのショート発生率を測定したところ、全てが200ppm未満となり、実用上問題ない結果を示した。 In addition, when the short-circuit occurrence rates of the anisotropic conductive films of Examples 1 to 11 were measured using the following short-circuit occurrence rate evaluation ICs, all of them were less than 200 ppm, which was a practically satisfactory result.
ショート発生率評価用IC
櫛歯TEG(test element group))
外径 1.5×13mm
厚み 0.5mm
バンプ仕様 金メッキ、高さ15μm、サイズ25×140μm、バンプ間距離7.5μm
Short circuit rate evaluation IC
Comb teeth TEG (test element group))
Outer diameter 1.5 × 13mm
Thickness 0.5mm
Bump specifications Gold plating, height 15μm, size 25 × 140μm, distance between bumps 7.5μm
(c)バンプ1個当たりの粒子最小捕捉数
各実施例及び比較例の異方性導電フィルムを用いて、(a-1)と同様にして評価用接続物(バンプ100個)を得、各バンプにおける粒子捕捉数を計測し、その最小数を求めた。なお、この接続においても、異方性導電フィルムの長手方向をバンプの短手方向(端子間距離の方向)に合わせた。結果を表1Aに示す。
(c) Minimum number of captured particles per bump Using the anisotropic conductive films of Examples and Comparative Examples, a connection article for evaluation (100 bumps) was obtained in the same manner as (a-1). The number of captured particles in the bump was measured, and the minimum number was obtained. In this connection, also in this connection, the longitudinal direction of the anisotropic conductive film was aligned with the short direction of the bump (the direction of the distance between terminals). The results are shown in Table 1A.
また、(a-2)、(a-3)と同様にして評価用接続物(バンプ100個ずつ)を得、上記と同様にして各バンプにおける粒子捕捉数の最小数を求め、以下の基準で評価した。C評価以上であれば実用上問題はない。結果を表1Bに示す。
(評価基準)
A(非常に良好):10個以上
B(良好):5個以上、10個未満
C(普通):3個以上、5個未満
D(不良):3個未満
In addition, in the same manner as in (a-2) and (a-3), connection articles for evaluation (100 bumps each) were obtained, and the minimum number of captured particles in each bump was determined in the same manner as described above. Was evaluated. There is no practical problem if the evaluation is C or higher. The results are shown in Table 1B.
(Evaluation criteria)
A (very good): 10 or more B (good): 5 or more and less than 10 C (normal): 3 or more and less than 5 D (bad): less than 3
(d)バンプ間の粒子状態
(c)の評価用接続物(即ち、(a-1)、(a-2)、(a-3)と同様にして得た評価用接続物)において、バンプ−バンプ間においてバンプと接続していない導電粒子が互いに連結することにより形成された導電粒子群の発生数をカウントした。表1Aに、(a-1)と同様にして得た評価用接続物について、バンプ−バンプ間の個数100あたりの、接続前の状態に対して導電粒子ユニットもしくは導電粒子が連結した導電粒子群のカウント値を示す。このカウント値により、異方性導電接続における導電粒子の移動のし易さ(即ち、導電粒子の接触によるショートの発生リスク)を評価することができる。
(d) Particle state between bumps In the connection for evaluation of (c) (that is, the connection for evaluation obtained in the same manner as in (a-1), (a-2) and (a-3)), -The number of conductive particles formed by connecting conductive particles not connected to the bumps between the bumps was counted. In Table 1A, for the connection article for evaluation obtained in the same manner as in (a-1), the conductive particle unit or the conductive particle group in which the conductive particles were connected to the state before connection per 100 pieces between bumps and bumps Shows the count value of. Based on this count value, it is possible to evaluate the ease of movement of the conductive particles in the anisotropic conductive connection (that is, the risk of occurrence of a short circuit due to the contact of the conductive particles).
(a-2)、(a-3)と同様にして得た評価用接続物では、意図的にアライメントをずらしているため、(a-1)と同様にして得た評価用接続物の評価と同じ尺度で比較はできないが、バンプ−バンプ間の個数100を観察したところ、著しく悪化していないことは確認できた。また、これらの評価用接続物について、ショートが発生していると見られる箇所をランダムに抽出し、接続物の断面状態を確認したところ、(a-1)と同様にして得た評価用接続物に比して、(a-2)、(a-3)と同様にして得た評価用接続物の断面形状が著しくが悪化しているとは認められなかった。
Since the alignment of the evaluation connection obtained in the same manner as in (a-2) and (a-3) was intentionally shifted, the evaluation of the evaluation connection in the same manner as in (a-1) was evaluated. Although the comparison cannot be carried out on the same scale as in the above, it was confirmed that the number of bumps between bumps was not significantly deteriorated when the number of bumps was observed. In addition, for these connection pieces for evaluation, locations where a short circuit was observed were randomly extracted, and the cross-sectional state of the connection article was confirmed. The connection for evaluation obtained in the same manner as (a-1) was obtained. It was not recognized that the cross-sectional shape of the connection article for evaluation obtained in the same manner as (a-2) and (a-3) was significantly deteriorated as compared with the article.
表1Aから、実施例1〜11では、導電粒子ユニットの最近接距離Laが導電粒子の粒子径の0.5〜3倍の範囲で導通抵抗が0.4〜0.6Ωであるが、導電粒子ユニットが形成されていない比較例1では、導電粒子の最近接距離が導電粒子の粒子径の0.5倍であっても導通抵抗が0.8Ωと高く、ショートも比較的高い頻度で生じることがわかる。 From Table 1A, in Examples 1 to 11, the conduction resistance is 0.4 to 0.6Ω when the closest distance La of the conductive particle unit is 0.5 to 3 times the particle diameter of the conductive particles. In Comparative Example 1 in which the particle unit was not formed, even when the closest distance of the conductive particles was 0.5 times the particle diameter of the conductive particles, the conduction resistance was as high as 0.8Ω and short-circuiting occurred relatively frequently. You can see that.
また、比較例2から、導電粒子ユニットの最近接距離Laが導電粒子の粒子径の0.5倍未満であるとショート数が顕著に多くなることがわかる。 Also, from Comparative Example 2, it can be seen that when the closest distance La of the conductive particle unit is less than 0.5 times the particle diameter of the conductive particles, the number of shorts is significantly increased.
さらに、比較例1、比較例2では、バンプ間の粒子状態から、バンプ間距離に対して導電粒子の粒子径が大きすぎるため、バンプレイアウトと適合していないことが分かる。特に比較例2では、バンプ1個あたりの粒子最小捕捉数が0であり、導電粒子がバンプに捕捉されない状態が発生しており、異方性接続が安定していないことがわかる。これにより、導電粒子の粒子径を大きくすることにより導電粒子の占有面積率を大きくするだけでは、ファインピッチにおける異方性接続には対応できないことがわかる。 Furthermore, in Comparative Example 1 and Comparative Example 2, it can be seen from the particle state between the bumps that the conductive particles have too large a particle diameter with respect to the distance between the bumps, and thus are not compatible with the bump layout. In particular, in Comparative Example 2, the minimum number of particles captured per bump was 0, and a state where the conductive particles were not captured by the bumps occurred, indicating that the anisotropic connection was not stable. Accordingly, it is understood that simply increasing the occupied area ratio of the conductive particles by increasing the particle diameter of the conductive particles cannot cope with anisotropic connection at a fine pitch.
さらに、実施例1〜11から、導電粒子ユニットの最近接距離Laが互いに等しい場合、導電粒子ユニットの長手方向が異方性導電フィルムの長手方向に対して傾いているとバンプ1個当たりの粒子最小捕捉数が増加し、導通信頼性が高いことがわかる。 Further, from Examples 1 to 11, when the closest distances La of the conductive particle units are equal to each other, if the longitudinal direction of the conductive particle unit is inclined with respect to the longitudinal direction of the anisotropic conductive film, particles per bump It can be seen that the minimum capture number increases and the conduction reliability is high.
一方、表1Bから、(a-2)及び(a-3)では(a-1)と同等以上の導通性能が得られ、バンプ1個当たりの粒子最小捕捉数も良好であったことがわかる。 On the other hand, from Table 1B, it can be seen that in (a-2) and (a-3), conduction performance equal to or higher than (a-1) was obtained, and the minimum number of particles per bump was good. .
また、(a-1)、(a-2)及び(a-3)で得られた評価用接続物を、温度85℃、湿度85%RHの恒温槽に500時間おいた後の導通抵抗を(a-1)と同様に測定した。その結果、実施例の評価用接続物の全てにおいて導通抵抗が5Ω未満であることを確認し、実用上問題ないことを確認した。 Further, the conduction resistance after placing the connection for evaluation obtained in (a-1), (a-2) and (a-3) in a thermostat at a temperature of 85 ° C. and a humidity of 85% RH for 500 hours is shown. It measured similarly to (a-1). As a result, it was confirmed that the conduction resistance was less than 5Ω in all of the evaluation connection products of the examples, and that there was no practical problem.
参考例1〜5
表2に示す導電粒子の連結個数と配置とし、実施例1と同様にして異方性導電フィルムを製造し、評価した。結果を表2に示す。
Reference Examples 1 to 5
Anisotropic conductive films were produced and evaluated in the same manner as in Example 1 with the number and arrangement of the conductive particles shown in Table 2 being connected. Table 2 shows the results.
表2から、導電粒子ユニットにおける導電粒子の連結個数は、異方性導電フィルムの短手方向(バンプの長手方向)については、特に制限はないが(参考例1、2)、バンプ間距離の方向については、導電粒子ユニットの最大長と導電粒子径の和がバンプ間距離の大きさよりも大きいとショート数が多くなることがわかる(参考例3〜5)。したがって、実施例の異方性導電フィルムを使用する場合でも、導電粒子ユニットの最大長と接続端子の端子間距離に応じて異方性導電フィルムの向きを調整するのが好ましいことがわかる。 From Table 2, the number of connected conductive particles in the conductive particle unit is not particularly limited in the short direction (longitudinal direction of the bump) of the anisotropic conductive film (Reference Examples 1 and 2). As for the direction, when the sum of the maximum length of the conductive particle unit and the diameter of the conductive particles is larger than the distance between the bumps, the number of shorts increases (Reference Examples 3 to 5). Therefore, even when the anisotropic conductive film of the example is used, it is understood that it is preferable to adjust the direction of the anisotropic conductive film according to the maximum length of the conductive particle unit and the distance between the connection terminals.
参考例4、5のようにバンプ間距離に対して、ユニット長が90%以上になるとショートが発生し、また、バンプ間の粒子状態の評価結果から、バンプ間でユニット同士が接触しているものが増加していることがわかるので、バンプ間距離と平行なユニット長は、所定の個数と大きさに設定しなければならないことがわかる。 As in Reference Examples 4 and 5, when the unit length is 90% or more with respect to the distance between the bumps, a short circuit occurs, and from the evaluation result of the particle state between the bumps, the units are in contact with each other between the bumps. It can be seen that the number of units has increased, so that the unit length parallel to the inter-bump distance must be set to a predetermined number and size.
実施例1、12〜14
表3に示す導電粒子の連結個数の配置とし、実施例1と同様にして異方性導電フィルムを製造し、評価した。結果を表3に示す。
表3から、導電粒子ユニットの長手方向と異方性導電フィルムの短手方向(接続端子の長手方向)とが揃っている場合、個々の導電粒子ユニット内の導電粒子の間隙をゼロから導電粒子の粒子径の1/2の大きさまで任意に変更しても導電粒子ユニットが格子状に配列した状態を形成することができ、ショート数を低減し導通信頼性を高められることがわかる。
Example 1, 12-14
Anisotropic conductive films were manufactured and evaluated in the same manner as in Example 1 with the arrangement of the number of connected conductive particles shown in Table 3. Table 3 shows the results.
From Table 3, when the longitudinal direction of the conductive particle unit and the short direction (longitudinal direction of the connection terminal) of the anisotropic conductive film are aligned, the gap between the conductive particles in each conductive particle unit is reduced from zero to the conductive particles. It can be seen that even if the particle size is arbitrarily changed up to の of the particle size, a state in which the conductive particle units are arranged in a lattice can be formed, the number of short circuits can be reduced, and the conduction reliability can be improved.
1A、1B、1C、1D、1E、1F、1G、1H、1I、1J、1K、1L 異方性導電フィルム
2、2a 導電粒子
3、3a、3b、3p、3q、3i、3j、3k 導電粒子ユニット
4 絶縁接着剤層
5 絶縁接着剤層形成用組成物層
6 剥離シート
10、10p、10q 型
11 凹み
20 接続端子
D1 異方性導電フィルムの長手方向
D2 異方性導電フィルムの短手方向
La 隣接する導電粒子ユニット及び単独の導電粒子から選ばれる導電粒子同士の最近接距離
La1 隣接する導電粒子ユニットの最近接距離の異方性導電フィルムの長手方向の長さ
Lb 導電粒子ユニットの異方性導電フィルムの長手方向の長さ
Lc 隣接する導電粒子ユニットの導電粒子であって、異方性導電フィルムの長手方向で重なる最近接導電粒子同士の該長手方向の距離
Ld 接続端子間距離の方向の導電粒子ユニットの長さ
Le 導電粒子の粒子径
Lh 型の凹みの長手方向に隣接する凹み同士の距離
Li 型の凹みの、該凹みの長手方向の長さ
Lj 型の凹みに導電粒子を充填した後の間隙の、該凹みの長手方向の長さの合計
Lx 接続端子間距離
s1、s2、s3 間隙
θ 異方性導電フィルムの長手方向に対する導電粒子ユニットの長手方向の角度
1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J, 1K, 1L Anisotropic
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JP2019029135A (en) * | 2017-07-27 | 2019-02-21 | 日立化成株式会社 | Anisotropic conductive film, manufacturing method thereof, connecting structure, and manufacturing method thereof |
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