JP6652795B2 - 結晶太陽電池の製造方法 - Google Patents
結晶太陽電池の製造方法 Download PDFInfo
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- JP6652795B2 JP6652795B2 JP2015152455A JP2015152455A JP6652795B2 JP 6652795 B2 JP6652795 B2 JP 6652795B2 JP 2015152455 A JP2015152455 A JP 2015152455A JP 2015152455 A JP2015152455 A JP 2015152455A JP 6652795 B2 JP6652795 B2 JP 6652795B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 71
- 238000002161 passivation Methods 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- -1 oxynitride Chemical compound 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 3
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 158
- 230000008901 benefit Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 12
- 239000006117 anti-reflective coating Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 8
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000005868 electrolysis reaction Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Chemistry (AREA)
Description
Claims (9)
- 結晶半導体太陽電池を製造する方法であって、この方法は、
半導体基板の表面上の第1の所定の位置に、誘電体層を堆積する工程と、
その後に、半導体基板の表面上の、第1の所定の位置とは異なりかつ重ならない第2の所定の位置に、ドープされたエピタキシャル層を成長する工程と、を含み、
太陽電池の製造中に、半導体基板の表面上に誘電体層が残り、
誘電体層は、太陽電池の表面パッシベーション層として維持され、
ドープされたエピタキシャル層の成長は、600℃から1000℃までの範囲の温度で行われ、
ドープされたエピタキシャル層の成長は、これにより、誘電体層の表面パッシベーション品質を改良し、そして、
第1の所定の位置と第2の所定の位置は、半導体基板の対向する面上に存在する、方法。 - 誘電体層は、500℃より低い温度で堆積される請求項1に記載の方法。
- 第1の所定の位置に誘電体層を堆積する工程は、化学気相堆積、原子層堆積、熱分解コーティング、スピンコーティング、スプレーコーティング、またはディップコーティングにより誘電体層を堆積する工程を含む請求項1または2のいずれかに記載の方法。
- 誘電体層は、シリコン酸化物、シリコン窒化物、シリコン炭化物、酸窒化物、またはチタン酸化物を含む請求項1〜3のいずれかに記載の方法。
- ドープされたエピタキシャル層は、太陽電池のエミッタ領域、裏面電界領域、および/または表面電界領域を形成する請求項1〜4のいずれかに記載の方法。
- 第1の所定の位置は、半導体基板の両方の面上に存在する請求項1〜5のいずれかに記載の方法。
- 第2の所定の位置は、半導体基板の両方の面上に存在する請求項1〜6のいずれかに記載の方法。
- 第1の所定の位置に誘電体層を堆積する工程は、第1の所定の位置と第2の所定の位置に誘電体層を堆積する工程と、これに続く、第2の所定の位置から誘電体層を除去する工程とを含む請求項1〜7のいずれかに記載の方法。
- 第2の所定の位置にドープされたエピタキシャル層を成長する工程は、両方の半導体基板表面が、エピタキシャル成長中に用いられる前駆体に露出するシステム中で行われる請求項1〜8のいずれかに記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14183484.6 | 2014-09-04 | ||
EP14183484.6A EP2993699B1 (en) | 2014-09-04 | 2014-09-04 | Method for fabricating crystalline photovoltaic cells |
Publications (2)
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JP2016058720A JP2016058720A (ja) | 2016-04-21 |
JP6652795B2 true JP6652795B2 (ja) | 2020-02-26 |
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JP2015152455A Expired - Fee Related JP6652795B2 (ja) | 2014-09-04 | 2015-07-31 | 結晶太陽電池の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20160072001A1 (ja) |
EP (1) | EP2993699B1 (ja) |
JP (1) | JP6652795B2 (ja) |
CN (1) | CN105405921A (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI540749B (zh) * | 2014-11-04 | 2016-07-01 | Atomic Energy Council | Method for patterning a semiconductor element and its electroplated electrode |
US11145774B2 (en) * | 2018-05-30 | 2021-10-12 | Solar Inventions Llc | Configurable solar cells |
EP3790058A1 (en) * | 2019-09-03 | 2021-03-10 | Silbat Energy Storage Solutions, S.L. | Thermo-photovoltaic cell and method of manufacturing same |
CN113539871B (zh) * | 2021-06-25 | 2022-07-01 | 英利能源(中国)有限公司 | 一种链式pecvd镀膜工艺稳定性的检测方法 |
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2014
- 2014-09-04 EP EP14183484.6A patent/EP2993699B1/en not_active Not-in-force
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2015
- 2015-07-31 JP JP2015152455A patent/JP6652795B2/ja not_active Expired - Fee Related
- 2015-08-28 US US14/839,785 patent/US20160072001A1/en not_active Abandoned
- 2015-08-31 CN CN201510546720.2A patent/CN105405921A/zh active Pending
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Publication number | Publication date |
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US20160072001A1 (en) | 2016-03-10 |
EP2993699A1 (en) | 2016-03-09 |
EP2993699B1 (en) | 2018-03-21 |
JP2016058720A (ja) | 2016-04-21 |
CN105405921A (zh) | 2016-03-16 |
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