JP6650258B2 - プラズマ処理装置及びプラズマ処理装置の運転方法 - Google Patents
プラズマ処理装置及びプラズマ処理装置の運転方法 Download PDFInfo
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
P(T_k,t)が大きいほど、すなわち、同相成分の強度である確度が高いほど、w_k,tは大きくなる。P(T_k,t)が小さいほど、すなわち、同相成分の強度である確度が低いほど、w_k,tは小さくなる。このw_k,tを用いて、z_t内の同相成分v_tが以下の式を用いて算出される。
このように同相成分を算出することにより、干渉光の強度の変化が同相成分に直交しない場合であっても、同相成分以外の変化の成分が除去されることが抑制され、信号の他の成分への悪影響を抑制しつつ同相成分が除去される。このように処理された処理室102からの光の強度信号を用いてエッチング量やその終点の判定に必要となる強度の変化を検出することで、当該検出の精度を向上することができる。
101…真空容器、
102…処理室、
103…プラズマ、
104…試料、
105…試料台、
106…光ファイバー、
110…エッチング量検出器、
111…分光器、
112…エッチング量判定部、
113…表示器、
120…同相成分除去装置。
Claims (10)
- 真空容器内に配置された処理室内に配置された試料を当該処理室内に形成したプラズマを用いてエッチング処理するプラズマ処理装置であって、
前記試料の処理中の複数の時刻で処理室内からの複数の波長の光の強度を検出する光検出器と、この光検出器の出力から得られた前記複数の時刻のうちの任意の時刻における前記複数の波長の時系列のデータの間で同相の関係性の高い成分を前記時系列のデータを主成分分析した結果を用いて検出する成分検出器と、前記時系列のデータから前記同相の関係性の高い成分を減算して除去した結果を用いて検出された少なくとも1つの前記複数の波長の光の強度の変化に基づいて前記エッチング処理の量または終点を判定する判定器とを備えたプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、
前記複数の時刻の間隔が前記光の強度の極大値と極小値との間の変化に要する時間より小さいプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、
前記成分検出器は、前記光検出器の出力から得られた前記複数の時刻のうちの任意の時刻における前記複数の波長の時系列のデータの差分値の間で前記同相の関係性の高い成分を前記時系列のデータを主成分分析した結果を用いて検出するプラズマ処理装置。
- 請求項1乃至3の何れかに記載のプラズマ処理装置であって、
前記成分検出器は、前記光検出器の出力から得られた前記複数の時刻のうちの任意の時刻における前記複数の波長の時系列のデータの間で当該時刻において同期して生じる成分を前記同相の関係性の高い成分として前記時系列のデータを主成分分析した結果を用いて検出するプラズマ処理装置。
- 請求項1乃至4の何れかに記載のプラズマ処理装置であって、
前記成分検出器は、前記同相の関係性の高い成分の強度が所定の分布に従う確率変数である確率に基づいて当該同相の関係性の高い成分を検出するプラズマ処理装置。
- 真空容器内に配置された処理室内に処理対象の試料を配置して、当該処理室内に形成したプラズマを用いてエッチング処理するプラズマ処理装置の運転方法であって、
前記試料の処理中の複数の時刻で処理室内からの複数の波長の光の強度を検出し、検出された光の強度から得られた前記複数の時刻のうちの任意の時刻における前記複数の波長の時系列のデータの間で同相の関係性の高い成分を前記時系列のデータを主成分分析した結果を用いて検出し、前記時系列のデータから当該同相の関係性の高い成分を減算して除去した結果を用いて検出された少なくとも1つの前記複数の波長の光の強度の変化に基づいて前記エッチング処理の量または終点を判定するプラズマ処理装置の運転方法。
- 請求項6に記載のプラズマ処理装置の運転方法であって、
前記複数の時刻の間隔が前記光の強度の極大値と極小値との間の変化に要する時間より小さくされたプラズマ処理装置の運転方法。
- 請求項6または7に記載のプラズマ処理装置の運転方法であって、
前記検出された光の強度から得られた前記複数の時刻のうちの任意の時刻における前記複数の波長の時系列のデータの差分値の間で前記同相の関係性の高い成分を前記時系列のデータを主成分分析した結果を用いて検出するプラズマ処理装置の運転方法。
- 請求項6乃至8の何れかに記載のプラズマ処理装置の運転方法であって、
前記検出された光の強度から得られた前記複数の時刻のうちの任意の時刻における前記複数の波長の時系列のデータの間で当該時刻において同期して生じる成分を前記同相の関係性の高い成分として前記時系列のデータを主成分分析した結果を用いて検出するプラズマ処理装置の運転方法。
- 請求項6乃至9の何れかに記載のプラズマ処理装置の運転方法であって、
前記同相の関係性の高い成分の強度が所定の分布に従う確率変数である確率に基づいて当該同相の関係性の高い成分を検出するプラズマ処理装置の運転方法。
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KR1020160122799A KR101835437B1 (ko) | 2015-12-17 | 2016-09-26 | 플라스마 처리 장치 및 플라스마 처리 장치의 운전 방법 |
US15/277,272 US9934946B2 (en) | 2015-12-17 | 2016-09-27 | Plasma processing apparatus and operating method of plasma processing apparatus |
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JP6173851B2 (ja) * | 2013-09-20 | 2017-08-02 | 株式会社日立ハイテクノロジーズ | 分析方法およびプラズマエッチング装置 |
CN111132802A (zh) * | 2017-11-16 | 2020-05-08 | 应用材料公司 | 用于抛光垫磨损率监测的预测滤波器 |
KR102286360B1 (ko) * | 2019-02-08 | 2021-08-05 | 주식회사 히타치하이테크 | 에칭 처리 장치, 에칭 처리 방법 및 검출기 |
JP7094377B2 (ja) * | 2019-12-23 | 2022-07-01 | 株式会社日立ハイテク | プラズマ処理方法およびプラズマ処理に用いる波長選択方法 |
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US20210407776A1 (en) * | 2020-06-25 | 2021-12-30 | Hitachi High-Tech Corporation | Vacuum processing apparatus and vacuum processing method |
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