JP6649837B2 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP6649837B2
JP6649837B2 JP2016080230A JP2016080230A JP6649837B2 JP 6649837 B2 JP6649837 B2 JP 6649837B2 JP 2016080230 A JP2016080230 A JP 2016080230A JP 2016080230 A JP2016080230 A JP 2016080230A JP 6649837 B2 JP6649837 B2 JP 6649837B2
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substrate
separate member
processing apparatus
nozzle
substrate processing
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JP2017191849A (en
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弘晃 石井
弘晃 石井
励 武明
励 武明
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Screen Holdings Co Ltd
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Priority to KR1020187029061A priority patent/KR102104737B1/en
Priority to CN201780023526.3A priority patent/CN109075051B/en
Priority to TW106112024A priority patent/TWI650187B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Automation & Control Theory (AREA)
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Description

この発明は、半導体ウエハ、液晶表示装置用ガラス基板、プラズマディスプレイ用ガラス基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用ガラス基板、太陽電池用基板、等（以下、単に「基板」という）に、処理を施す基板処理装置に関する。   The present invention relates to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, a substrate for a solar cell, etc. (Hereinafter simply referred to as “substrate”).

このような基板処理装置として、特許文献１には、基板を水平に保持する保持部材と、基板の周縁部に沿って基板の端面と間隔をあけて基板の全周を取り囲むリングとを一緒に回転させつつ、基板の上面中央部に当たるように処理液を吐出する装置が開示されている。当該リング表面は、親水性である。基板表面が疎水性である場合において、当該リングが設けられていない場合には、基板の上面中央部に供給された処理液が遠心力により基板の中央部から周縁部へ拡がる際に放射状に不均一に拡がる。このため、基板の上面全体に均一に処理液を供給することができない。   As such a substrate processing apparatus, Patent Literature 1 discloses that a holding member that horizontally holds a substrate and a ring that surrounds the entire periphery of the substrate at intervals from an end surface of the substrate along a peripheral edge of the substrate. An apparatus for discharging a processing liquid so as to hit a central portion of an upper surface of a substrate while rotating the substrate is disclosed. The ring surface is hydrophilic. In the case where the substrate surface is hydrophobic and the ring is not provided, the processing liquid supplied to the central portion of the upper surface of the substrate does not radially spread when the processing solution spreads from the central portion to the peripheral portion of the substrate due to centrifugal force. Spread evenly. Therefore, the processing liquid cannot be uniformly supplied to the entire upper surface of the substrate.

そこで、特許文献１の装置は、親水性のリングを利用して、基板の中央部から周縁部に達した処理液を、基板の周縁部近傍において膜状に拡げることにより、上面全体に均一に処理液を供給することを図っている。   Therefore, the apparatus disclosed in Patent Document 1 uses a hydrophilic ring to spread the processing liquid that has reached the peripheral portion from the center of the substrate in the form of a film in the vicinity of the peripheral portion of the substrate, thereby uniformly covering the entire upper surface. It is intended to supply a processing liquid.

特許文献２には、下方から基板を水平に保持しつつ回転する保持部材と、基板の周縁部に沿って基板の端面と間隔をあけて基板の全周を取り囲むリングと、回転されている基板の上面中央部に当たるように処理液を吐出するノズルとを備える基板処理装置が開示されている。当該リングは、撥水性が基板よりも高く、回転することなく保持されている。基板の表面が疎水性である場合には、上述のように、上面中央部に供給された処理液は、基板の周縁部近傍において放射状に不均一に拡がる。しかしながら、特許文献２の装置では、処理液が基板の周縁部から外部に排出される際に、基板を取り囲むリングが処理液の流れを妨げることによって処理液の排出を妨げる。これにより、当該装置は、排出される処理液の一部を基板上に溜めて、基板上に処理液の液膜を形成し、基板の上面全域に確実に処理液を供給することを図っている。   Patent Literature 2 discloses a holding member that rotates while horizontally holding a substrate from below, a ring that surrounds the entire periphery of the substrate at a distance from an end surface of the substrate along a peripheral edge of the substrate, and a rotating substrate. And a nozzle for discharging a processing liquid so as to hit a central portion of the upper surface of the substrate processing apparatus. The ring has higher water repellency than the substrate and is held without rotating. When the surface of the substrate is hydrophobic, as described above, the processing liquid supplied to the central portion of the upper surface spreads radially unevenly near the periphery of the substrate. However, in the apparatus of Patent Document 2, when the processing liquid is discharged to the outside from the peripheral portion of the substrate, the ring surrounding the substrate hinders the flow of the processing liquid, thereby preventing the discharge of the processing liquid. Accordingly, the apparatus collects a part of the discharged processing liquid on the substrate, forms a liquid film of the processing liquid on the substrate, and reliably supplies the processing liquid to the entire upper surface of the substrate. I have.

基板の中央部にデバイスパターンが形成されるデバイス領域が設けられ、デバイス領域以外の周縁部にエッチング等の処理が行われることがある。特許文献３には、このような基板の周縁部の処理を行う基板処理装置が開示されている。当該装置は、基板の上方に基板表面と対向する遮断部材を有し、基板を略水平面内にて回転させながら遮断部材の周縁部に配置されたノズルから、基板上面の周縁部に向けて処理液を供給して基板上面のうち周縁部のエッチング処理を行う。   A device region where a device pattern is formed is provided at the center of the substrate, and a process such as etching may be performed on a peripheral portion other than the device region. Patent Literature 3 discloses a substrate processing apparatus that performs such processing on a peripheral portion of a substrate. The apparatus has a blocking member facing the substrate surface above the substrate, and performs processing from a nozzle disposed at a peripheral portion of the blocking member to a peripheral portion of the upper surface of the substrate while rotating the substrate in a substantially horizontal plane. A liquid is supplied to perform etching on the peripheral portion of the upper surface of the substrate.

特開２０１２−９４８３６号公報JP 2012-94836 A 特開２０１０−１５７５３１号公報JP 2010-155751 A 特開２００８−４７６２９号公報JP 2008-47629 A

基板の処理面のうち周縁部における周縁側の細幅領域のみを処理するためには、基板の処理面のうち当該周縁側の細幅領域のみに処理液を供給する必要が有る。しかしながら、特許文献１、２の基板処理装置は、基板の上面全体に処理液を供給するため、基板の処理面のうち当該細幅領域のみに処理液を供給することができないといった問題がある。   In order to process only the peripheral narrow portion in the peripheral portion of the processing surface of the substrate, it is necessary to supply the processing liquid only to the peripheral narrow portion of the processing surface of the substrate. However, the substrate processing apparatuses disclosed in Patent Documents 1 and 2 supply the processing liquid to the entire upper surface of the substrate, and thus have a problem that the processing liquid cannot be supplied only to the narrow area on the processing surface of the substrate.

また、特許文献３の装置では、処理液が基板の周縁部のうち平坦部分に向けて吐出されるため、処理液が基板の周縁部において拡がってしまい、基板の処理面のうち周縁部の細幅領域のみを処理することができないといった問題がある。特許文献３の装置によって当該細幅領域を処理するために、処理液の吐出目標領域を、基板の端面ぎりぎりに設定すると、基板の平坦部と端部との境界部分に処理液が当たることによって処理液の流れが乱れる。すなわち、基板に当たった処理液が基板の中心側に拡がったり、端面側に流れたりする。そのため、処理液により処理される処理幅は、基板の周方向に沿って、不均一となり、基板の回転中心側に拡がった処理液の先端を結ぶ線が、基板の周方向に沿って波形となる。このため、基板の周縁部の処理幅が不均一になるといった問題がある。   Further, in the apparatus disclosed in Patent Document 3, since the processing liquid is discharged toward a flat portion of the peripheral portion of the substrate, the processing liquid spreads at the peripheral portion of the substrate, and the peripheral portion of the processing surface of the substrate becomes narrow. There is a problem that only the width region cannot be processed. In order to process the narrow area by the apparatus of Patent Document 3, the target area of the processing liquid is set to be almost at the edge of the substrate, and the processing liquid hits the boundary between the flat portion and the edge of the substrate. The flow of the processing liquid is disturbed. That is, the processing liquid that has hit the substrate spreads toward the center of the substrate or flows toward the end face. Therefore, the processing width processed by the processing liquid becomes non-uniform along the circumferential direction of the substrate, and the line connecting the front end of the processing liquid spread to the rotation center side of the substrate has a waveform along the circumferential direction of the substrate. Become. For this reason, there is a problem that the processing width of the peripheral portion of the substrate becomes uneven.

本発明は、こうした問題を解決するためになされたもので、基板の周縁部を処理する基板処理技術において、基板の周縁部の処理幅を細くできるとともに、処理幅の均一性を向上できる技術を提供することを目的とする。   The present invention has been made in order to solve such a problem. In a substrate processing technology for processing a peripheral portion of a substrate, a technology capable of reducing a processing width of the peripheral portion of the substrate and improving uniformity of the processing width is provided. The purpose is to provide.

上記の課題を解決するために、第１の態様に係る基板処理装置は、基板を下方から略水平に保持し、所定の回転軸を中心に回転可能に設けられた保持部材と、前記保持部材を、前記回転軸を中心に回転させることができる回転機構と、前記保持部材に保持されている前記基板の端面と隙間を隔てて前記基板の径方向に沿って前記基板の外側に配置される別部材と、少なくとも一部が前記別部材の上面に含まれる吐出目標領域に当たるように前記吐出目標領域の上方から処理液を吐出するノズルと、を備え、前記別部材と前記基板の端面との前記隙間は、前記吐出目標領域に当たった前記処理液が、前記別部材の上面を流れて当該上面の前記回転軸側の内側端から排出され、前記基板の上面周縁部に上方から当たるように設定されている。   In order to solve the above-described problems, a substrate processing apparatus according to a first aspect includes a holding member that holds a substrate substantially horizontally from below and that is rotatably provided about a predetermined rotation axis; A rotation mechanism that can rotate the rotation shaft as a center, and a rotation mechanism disposed outside the substrate along a radial direction of the substrate with a gap from an end surface of the substrate held by the holding member. A separate member, and a nozzle that discharges a processing liquid from above the discharge target region so that at least a portion thereof hits a discharge target region included in the upper surface of the separate member, The gap is such that the processing liquid hitting the discharge target area flows on the upper surface of the separate member and is discharged from the inner end of the upper surface on the rotation axis side, and hits the upper surface peripheral portion of the substrate from above. Is set.

第２の態様に係る基板処理装置は、第１の態様に係る基板処理装置であって、前記吐出目標領域の全てが、前記別部材の上面に含まれている。   A substrate processing apparatus according to a second aspect is the substrate processing apparatus according to the first aspect, wherein the entirety of the discharge target area is included on an upper surface of the separate member.

第３の態様に係る基板処理装置は、第１または第２の態様に係る基板処理装置であって、前記ノズルと前記別部材とを一体的に保持するノズル保持部材をさらに備える。   A substrate processing apparatus according to a third aspect is the substrate processing apparatus according to the first or second aspect, further comprising a nozzle holding member that integrally holds the nozzle and the separate member.

第４の態様に係る基板処理装置は、第１または第２の態様に係る基板処理装置であって、前記別部材は、前記回転軸を中心とする前記基板の周方向に沿って前記基板の周縁を取り囲む環状部材であり、前記基板処理装置は、前記別部材を前記基板と同じ回転速度で回転させる前記環状部材用の回転機構をさらに備える。   The substrate processing apparatus according to a fourth aspect is the substrate processing apparatus according to the first or second aspect, wherein the separate member is provided on the substrate along a circumferential direction of the substrate around the rotation axis. An annular member surrounding a periphery, and the substrate processing apparatus further includes a rotation mechanism for the annular member that rotates the another member at the same rotation speed as the substrate.

第５の態様に係る基板処理装置は、第４の態様に係る基板処理装置であって、前記環状部材は、複数の円弧状部材を含んでおり、前記複数の円弧状部材は、前記基板の周方向に沿って隣り合う２つの円弧状部材を含み、前記２つの円弧状部材のそれぞれの前記基板の周方向における一端同士が互いに対向しており、前記２つの円弧状部材は、それぞれの他端を中心に水平面内でそれぞれ回動可能に設けられており、前記基板処理装置は、前記２つの円弧状部材のそれぞれの他端を回転中心としてそれぞれの一端が互いに前記基板の径よりも離れるように前記２つの円弧状部材をそれぞれ回動させることができる回動機構をさらに備える。   The substrate processing apparatus according to a fifth aspect is the substrate processing apparatus according to the fourth aspect, wherein the annular member includes a plurality of arc-shaped members, and the plurality of arc-shaped members are provided on the substrate. Including two arc-shaped members adjacent to each other along the circumferential direction, one end of each of the two arc-shaped members in the circumferential direction of the substrate is opposed to each other, and the two arc-shaped members are each other. The substrate processing apparatus is provided so as to be rotatable around an end in a horizontal plane, and the substrate processing apparatus is configured such that one end of each of the two arc-shaped members is apart from the diameter of the substrate by using the other end of each of the two arc-shaped members as a rotation center. Further, a rotation mechanism capable of rotating each of the two arc-shaped members is further provided.

第６の態様に係る基板処理装置は、第１から第５の何れか１つの態様に係る基板処理装置であって、前記別部材を前記基板の径方向に移動可能な径方向駆動部と、前記径方向駆動部と、前記ノズルとを制御する制御部と、を備え、前記吐出目標領域に当たった前記処理液が、前記別部材の上面を流れて当該上面の前記回転軸側の内側端から排出され、前記基板の上面周縁部に上方から当たるときの前記別部材の位置によって前記別部材の処理位置を定義したとき、前記制御部は、前記径方向駆動部に前記別部材を前記処理位置よりも前記基板の径方向の外側の外側位置に配置させている間に、前記ノズルに前記吐出目標領域に向けて前記処理液の吐出を開始させるともに、前記ノズルに前記処理液の吐出をさせつつ、前記径方向駆動部に前記別部材を前記外側位置から前記処理位置に移動させる。   The substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to any one of the first to fifth aspects, wherein a radial driving unit capable of moving the separate member in a radial direction of the substrate; A processing unit that controls the radial direction driving unit and the nozzle, wherein the processing liquid that has hit the discharge target area flows on the upper surface of the separate member, and the inner end of the upper surface on the rotation axis side When the processing position of the separate member is defined by the position of the separate member when it is discharged from above and hits the upper surface peripheral portion of the substrate from above, the control unit controls the radial drive unit to process the separate member by the processing. While the nozzle is disposed at a position outside the radial direction of the substrate from the position, the nozzle starts discharging the processing liquid toward the discharge target area, and the nozzle discharges the processing liquid. While the radial drive unit The members from the outside position is moved to the processing position.

第７の態様に係る基板処理装置は、第１から第６の何れか１つの態様に係る基板処理装置であって、前記別部材の上面の前記回転軸側の内側端が、前記基板の周縁よりも前記基板の径方向に沿って前記回転軸側に位置する。   The substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to any one of the first to sixth aspects, wherein an inner end of the upper surface of the separate member on the rotation axis side is a peripheral edge of the substrate. And located closer to the rotation shaft side along the radial direction of the substrate.

第８の態様に係る基板処理装置は、第１から第７の何れか１つの態様に係る基板処理装置であって、前記別部材は、前記基板の前記端面に対向する内側面を含み、前記内側面がその下端から上端に向かって前記回転軸に近づくように前記回転軸に対して傾斜している。   The substrate processing apparatus according to an eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the separate member includes an inner surface facing the end surface of the substrate, The inner side surface is inclined with respect to the rotation axis so as to approach the rotation axis from the lower end toward the upper end.

第９の態様に係る基板処理装置は、第１から第７の何れか１つの態様に係る基板処理装置であって、前記別部材は、前記基板の前記端面に対向する内側面を含み、前記内側面は、その下端から上端に向かって前記回転軸に近づくとともに、前記回転軸に対して斜め上方に張り出して湾曲している。   The substrate processing apparatus according to a ninth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the separate member includes an inner side surface facing the end surface of the substrate, The inner side surface approaches the rotation axis from the lower end toward the upper end, and projects obliquely upward with respect to the rotation axis and is curved.

第１０の態様に係る基板処理装置は、第１から第７の何れか１つの態様に係る基板処理装置であって、前記別部材は、前記基板の前記端面に対向する内側面を含み、前記回転軸を含む平面における前記内側面の断面形状は、前記基板の端面に沿って湾曲している。   The substrate processing apparatus according to a tenth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the separate member includes an inner surface facing the end surface of the substrate, A cross-sectional shape of the inner side surface in a plane including a rotation axis is curved along an end surface of the substrate.

第１１の態様に係る基板処理方法は、基板処理装置における基板処理方法であって、当該基板処理装置は、基板を下方から略水平に保持し、所定の回転軸を中心に回転可能に設けられた保持部材と、前記保持部材を、前記回転軸を中心に回転させる回転機構と、前記基板から離れて配置される別部材と、処理液を吐出可能なノズルと、を備え、前記基板処理方法は、前記別部材を前記基板の端面と隙間を隔てて前記基板の径方向に沿って前記基板の外側に配置するステップと、少なくとも一部が前記別部材の上面に含まれる吐出目標領域に当たるように、前記ノズルに前記吐出目標領域の上方から処理液を吐出させるステップと、を備え、前記別部材と前記基板の端面との前記隙間は、前記吐出目標領域に当たった前記処理液が、前記別部材の上面を流れて当該上面の前記回転軸側の内側端から排出され、前記基板の上面周縁部に上方から当たるように設定されている。   A substrate processing method according to an eleventh aspect is a substrate processing method in a substrate processing apparatus, wherein the substrate processing apparatus is provided to hold a substrate substantially horizontally from below and to be rotatable about a predetermined rotation axis. The substrate processing method, comprising: a holding member, a rotation mechanism configured to rotate the holding member about the rotation axis, another member disposed apart from the substrate, and a nozzle capable of discharging a processing liquid. Arranging the separate member outside the substrate along the radial direction of the substrate with a gap between the end surface of the substrate and a gap, and at least a part of the separate member hits a discharge target area included in an upper surface of the separate member. Discharging the processing liquid from above the discharge target area to the nozzle, wherein the gap between the separate member and the end face of the substrate is the processing liquid hitting the discharge target area, Separate member Flowing a top is discharged from the inner end of the rotary shaft side of the upper surface, it is set to impinge from above the peripheral portion of the upper surface of the substrate.

第１および第１１の何れの態様に係る発明によっても、別部材の上面に少なくとも一部が含まれる吐出目標領域に当たるようにノズルから処理液が吐出される。別部材は、基板の端面と隙間を隔てて基板の径方向に沿って基板の外側に配置されており、当該隙間は、吐出目標領域に当たった処理液が、別部材の上面を流れて当該上面の回転軸側の内側端から排出され、基板の上面周縁部に上方から当たるように設定されている。従って、処理液による基板の上面周縁部の処理幅を細くできるとともに、処理幅の均一性を向上できる。   According to the invention of any of the first and eleventh aspects, the processing liquid is discharged from the nozzle so as to hit the discharge target area at least partially included on the upper surface of the separate member. The separate member is arranged outside the substrate along the radial direction of the substrate with a gap between the end face of the substrate and the gap, and the gap is configured such that the processing liquid that has hit the discharge target area flows over the upper surface of the separate member. It is set so that it is discharged from the inner end on the rotation axis side of the upper surface and hits the peripheral edge of the upper surface of the substrate from above. Therefore, the processing width of the peripheral portion of the upper surface of the substrate by the processing liquid can be reduced, and the uniformity of the processing width can be improved.

第２の態様に係る発明によれば、吐出目標領域の全てが、別部材の上面に含まれている。従って、基板の上面周縁部に当たる処理液は、全て、吐出目標領域から別部材の上面を流れて当該上面の回転軸側の内側端から排出される処理液である。従って、処理液が基板の上面周縁部に当たる位置と、別部材の内側端との基板の径方向に沿った距離を短くできる。これにより、処理液による基板の上面周縁部の処理幅をさらに細くできる。   According to the invention according to the second aspect, the entire discharge target region is included on the upper surface of the separate member. Therefore, the processing liquid that hits the peripheral edge of the upper surface of the substrate is all the processing liquid that flows from the discharge target area to the upper surface of another member and is discharged from the inner end of the upper surface on the rotation axis side. Therefore, the distance along the radial direction of the substrate between the position where the processing liquid contacts the peripheral edge of the upper surface of the substrate and the inner end of the separate member can be reduced. This makes it possible to further reduce the width of the processing liquid at the peripheral edge of the upper surface of the substrate.

第３の態様に係る発明によれば、ノズル保持部材がノズルと別部材とを一体的に保持するので、一定の吐出目標領域に当たるように処理液が吐出される。これにより、内側端から排出される処理液の排出態様を安定させることができる。従って、基板の上面周縁部の処理幅を安定させることができる。   According to the third aspect of the invention, since the nozzle holding member integrally holds the nozzle and the separate member, the processing liquid is discharged so as to hit a predetermined discharge target area. This makes it possible to stabilize the discharge of the processing liquid discharged from the inner end. Therefore, the processing width of the peripheral portion of the upper surface of the substrate can be stabilized.

第４の態様に係る発明によれば、別部材は、回転軸を中心とする基板の周方向に沿って基板の周縁を取り囲む環状部材であり、別部材は基板と同じ回転速度で回転される。従って、別部材を基板とともに回転させる場合においても、基板の上面周縁部の処理幅の均一性を向上できる。   According to the invention according to the fourth aspect, the separate member is an annular member that surrounds the periphery of the substrate along the circumferential direction of the substrate around the rotation axis, and the separate member is rotated at the same rotation speed as the substrate. . Therefore, even when another member is rotated together with the substrate, the uniformity of the processing width at the peripheral edge of the upper surface of the substrate can be improved.

第５の態様に係る発明によれば、２つの円弧状部材は、一端同士が対向して基板の周方向に沿って隣り合って設けられており、それぞれの他端を回転中心としてそれぞれの一端が互いに基板の径よりも離れるように回動させられ得る。従って、２つの円弧状部材の当該回動によって基板処理装置への基板の搬出入が可能となる。   According to the invention according to the fifth aspect, the two arc-shaped members are provided adjacent to each other along the circumferential direction of the substrate so that one ends thereof face each other, and each of the two arc-shaped members has the other end thereof as a center of rotation. Can be pivoted away from each other by more than the diameter of the substrate. Accordingly, the substrate can be carried in and out of the substrate processing apparatus by the rotation of the two arc-shaped members.

第６の態様に係る発明によれば、処理位置よりも基板の径方向の外側の外側位置に配置されている別部材の吐出目標領域に向けてノズルが処理液の吐出を開始し、ノズルが処理液を吐出している間に、別部材が外側位置から処理位置に移動される。従って、吐出開始時における処理液の液流の乱れの影響によって、基板の上面周縁部の処理幅が不均一になることを抑制できる。   According to the invention according to the sixth aspect, the nozzle starts discharging the processing liquid toward the discharge target area of another member arranged at a position outside the processing position in the radial direction of the substrate, and the nozzle starts discharging. While discharging the processing liquid, another member is moved from the outside position to the processing position. Therefore, it is possible to prevent the processing width of the peripheral edge of the upper surface of the substrate from being uneven due to the influence of the turbulence of the processing liquid flow at the start of the discharge.

第７の態様に係る発明によれば、別部材の上面の回転軸側の内側端が、基板の周縁よりも基板の径方向に沿って回転軸側に位置する。従って、基板の上面周縁部の処理幅を広くできる。   According to the invention according to the seventh aspect, the inner end of the upper surface of the separate member on the rotation axis side is positioned closer to the rotation axis side in the radial direction of the substrate than the peripheral edge of the substrate. Therefore, the processing width of the peripheral portion of the upper surface of the substrate can be increased.

第８の態様に係る発明によれば、別部材の内側面は、その下端から上端に向かって回転軸に近づくように回転軸に対して傾斜している。従って、別部材を昇降できる場合、処理位置の上方からの別部材の降下によって別部材を処理位置に配置することができる。   According to the invention according to the eighth aspect, the inner surface of the separate member is inclined with respect to the rotation axis so as to approach the rotation axis from the lower end toward the upper end. Therefore, when another member can be moved up and down, another member can be arranged at the processing position by lowering the other member from above the processing position.

第９の態様に係る発明によれば、別部材の内側面は、その下端から上端に向かって回転軸に近づくとともに、回転軸に対して斜め上方に張り出して湾曲している。従って、基板の端面と別部材との基板の径方向の隙間を、さらに均一化できる。これにより、基板の端面の処理効率を向上できる。   According to the invention according to the ninth aspect, the inner surface of the separate member approaches the rotation axis from the lower end toward the upper end, and projects obliquely upward with respect to the rotation axis and is curved. Therefore, the radial gap of the substrate between the end surface of the substrate and another member can be made more uniform. Thereby, the processing efficiency of the end face of the substrate can be improved.

第１０の態様に係る発明によれば、別部材は、基板の端面に対向する内側面を含み、回転軸を含む平面における内側面の断面形状は、基板の端面に沿って湾曲している。従って、基板の端面と別部材との基板の径方向の隙間を、さらに均一化できる。これにより、基板の端面の処理効率を向上できる。   According to the tenth aspect, the separate member includes the inner surface facing the end surface of the substrate, and a cross-sectional shape of the inner surface in a plane including the rotation axis is curved along the end surface of the substrate. Therefore, the radial gap of the substrate between the end surface of the substrate and another member can be made more uniform. Thereby, the processing efficiency of the end face of the substrate can be improved.

実施形態に係る基板処理装置の構成を説明するための側面模式図である。FIG. 2 is a schematic side view illustrating a configuration of the substrate processing apparatus according to the embodiment. 図１の基板処理装置の構成を説明するための上面模式図である。FIG. 2 is a schematic top view illustrating the configuration of the substrate processing apparatus of FIG. 1. 図１の基板処理装置の構成を説明するための概略斜視図である。FIG. 2 is a schematic perspective view illustrating a configuration of the substrate processing apparatus of FIG. 1. 図２のＡ１−Ａ１切断線における別部材と基板周縁部の断面模式図である。FIG. 3 is a schematic cross-sectional view of another member and a peripheral portion of a substrate taken along a cutting line A1-A1 in FIG. 2. 図４の別部材と基板との他の位置関係を説明するための断面模式図である。FIG. 5 is a schematic cross-sectional view for explaining another positional relationship between another member of FIG. 4 and a substrate. 別部材の他の実施形態を説明するための断面模式図である。It is a cross section for explaining other embodiments of another member. 別部材の他の実施形態を説明するための断面模式図である。It is a cross section for explaining other embodiments of another member. 別部材の他の実施形態を説明するための断面模式図である。It is a cross section for explaining other embodiments of another member. 別部材の他の実施形態を説明するための断面模式図である。It is a cross section for explaining other embodiments of another member. 図４の別部材における吐出目標領域を示す上面模式図である。FIG. 5 is a schematic top view showing a discharge target area in another member of FIG. 4. 別部材における吐出目標領域の他の配置例を示す上面模式図である。FIG. 11 is a schematic top view showing another example of the arrangement of the discharge target area in another member. 図１の別部材の他の構成例を説明するための上面模式図である。FIG. 4 is a schematic top view for explaining another configuration example of another member of FIG. 1. 図１の基板の周縁部付近を示す断面模式図である。FIG. 2 is a schematic sectional view showing the vicinity of a peripheral portion of the substrate of FIG. 1. 実施形態に係る基板処理装置の動作の一例を示すフローチャートである。5 is a flowchart illustrating an example of an operation of the substrate processing apparatus according to the embodiment. 図１４のフローチャートに示される動作を説明するための図である。FIG. 15 is a diagram for explaining the operation shown in the flowchart of FIG. 14. 他の実施形態に係る基板処理装置の構成を説明するための側面模式図である。FIG. 7 is a schematic side view illustrating a configuration of a substrate processing apparatus according to another embodiment. 図１６の基板処理装置の構成を説明するための上面模式図である。FIG. 17 is a schematic top view illustrating the configuration of the substrate processing apparatus of FIG. 16. 図１７の別部材の基板の搬出入時の動作を説明するための上面模式図である。FIG. 18 is a schematic top view for explaining the operation of another member of FIG. 17 when carrying in and out the substrate.

以下、図面を参照しながら、実施の形態について説明する。以下の実施の形態は、本発明を具体化した一例であり、本発明の技術的範囲を限定する事例ではない。また、以下に参照する各図では、理解容易のため、各部の寸法や数が誇張または簡略化して図示されている場合がある。上下方向は鉛直方向であり、スピンチャックに対して基板側が上である。   Hereinafter, embodiments will be described with reference to the drawings. The following embodiments are mere examples embodying the present invention, and do not limit the technical scope of the present invention. In each of the drawings referred to below, the dimensions and the numbers of the respective parts may be exaggerated or simplified for easy understanding. The vertical direction is the vertical direction, and the substrate side is above the spin chuck.

＜実施形態について＞
＜１．基板処理装置１の全体構成＞
基板処理装置１の構成について、図１〜図３を参照しながら説明する。図１〜図３は、実施形態に係る基板処理装置１の構成を説明するための図である。図１、図２は、基板処理装置１の側面模式図、上面模式図である。図３は、基板処理装置１を斜め上方からみた概略斜視図である。 <About the embodiment>
<1. Overall Configuration of Substrate Processing Apparatus 1>
The configuration of the substrate processing apparatus 1 will be described with reference to FIGS. 1 to 3 are views for explaining the configuration of the substrate processing apparatus 1 according to the embodiment. 1 and 2 are a schematic side view and a schematic top view, respectively, of the substrate processing apparatus 1. FIG. 3 is a schematic perspective view of the substrate processing apparatus 1 as viewed obliquely from above.

図１〜図３では、ノズル５１、別部材５２がそれぞれの処理位置に配置された状態で、基板９がスピンチャック２１によって回転軸ａ１周りに所定の回転方向（矢印ＡＲ１の方向）に回転している状態が示されている。また、図２には、待避位置に配置されたノズル５１、別部材５２等が仮想線で示されている。図２、図３では、基板処理装置１の構成要素のうち飛散防止部３等の一部の構成要素の記載は省略されている。   1 to 3, in a state where the nozzle 51 and the separate member 52 are arranged at the respective processing positions, the substrate 9 is rotated around the rotation axis a1 in a predetermined rotation direction (the direction of the arrow AR1) by the spin chuck 21. Is shown. Further, in FIG. 2, the nozzle 51, another member 52, and the like arranged at the retreat position are indicated by phantom lines. 2 and 3, some components of the substrate processing apparatus 1 such as the scattering prevention unit 3 are not illustrated.

基板９の表面形状は略円形である。基板９の基板処理装置１への搬入搬出は、ノズル５１等が待避位置に配置された状態で、ロボット等により行われる。基板処理装置１に搬入された基板９は、スピンチャック２１により着脱自在に保持される。   The surface shape of the substrate 9 is substantially circular. The loading and unloading of the substrate 9 to and from the substrate processing apparatus 1 is performed by a robot or the like in a state where the nozzles 51 and the like are arranged at the standby positions. The substrate 9 carried into the substrate processing apparatus 1 is detachably held by a spin chuck 21.

なお、以下の説明において、「処理液」には、薬液処理に用いられる「薬液」と、薬液をすすぎ流すリンス処理に用いられる「リンス液（「洗浄液」とも称される）」と、が含まれる。   In the following description, the “treatment liquid” includes “chemical liquid” used for chemical liquid processing and “rinse liquid (also called“ cleaning liquid ”) used for rinsing processing for rinsing the chemical liquid. It is.

基板処理装置１は、回転保持機構２、飛散防止部３、処理部５、ノズル移動機構６および制御部１３０を備える。これら各部２〜３、５〜６は、制御部１３０と電気的に接続されており、制御部１３０からの指示に応じて動作する。制御部１３０としては、例えば、一般的なコンピュータと同様のものを採用できる。すなわち、制御部１３０は、例えば、各種演算処理を行うＣＰＵ、基本プログラムを記憶する読み出し専用のメモリであるＲＯＭ、各種情報を記憶する読み書き自在のメモリであるＲＡＭ、制御用ソフトウェアやデータなどを記憶しておく磁気ディスク、等を備えている。制御部１３０においては、プログラムに記述された手順に従って主制御部としてのＣＰＵが演算処理を行うことにより、基板処理装置１の各部を制御する。   The substrate processing apparatus 1 includes a rotation holding mechanism 2, a scattering prevention unit 3, a processing unit 5, a nozzle moving mechanism 6, and a control unit 130. These units 2 to 3 and 5 to 6 are electrically connected to the control unit 130 and operate according to an instruction from the control unit 130. As the control unit 130, for example, the same as a general computer can be adopted. That is, the control unit 130 stores, for example, a CPU that performs various arithmetic processing, a ROM that is a read-only memory that stores a basic program, a RAM that is a readable and writable memory that stores various information, and control software and data. And a magnetic disk to be kept. In the control unit 130, each unit of the substrate processing apparatus 1 is controlled by a CPU serving as a main control unit performing arithmetic processing according to a procedure described in a program.

＜２．基板９＞
次に、基板処理装置１にて処理対象とされる基板９について、図１３を参照しながら説明する。図１３は、中心軸を含む平面における基板９の周縁部付近を示す断面図である。図１３の断面図は、基板９の主面の中心ｃ１を通る基板９（スピンチャック２１）の回転軸ａ１を含む平面における断面図（「縦断面図」とも称される）である。 <2. Substrate 9>
Next, the substrate 9 to be processed by the substrate processing apparatus 1 will be described with reference to FIG. FIG. 13 is a cross-sectional view showing the vicinity of the periphery of the substrate 9 on a plane including the central axis. The cross-sectional view of FIG. 13 is a cross-sectional view (also referred to as a “vertical cross-sectional view”) in a plane including the rotation axis a1 of the substrate 9 (spin chuck 21) passing through the center c1 of the main surface of the substrate 9.

基板処理装置１にて処理対象とされる基板９は、例えば、シリコン（Ｓｉ）により構成される中心層９０１、中心層９０１の外側に成膜された下層膜９０２、および、下層膜９０２の外側に成膜された上層膜９０３、の三層構造を備える。基板９の表面形状は略円形である。基板９の半径は、例えば、１５０ｍｍである。下層膜９０２は、例えば、熱酸化膜（Ｔｈ−ＳｉＯ２）、あるいは、絶縁膜（例えば、Ｈｆ（ハフニューム）膜、または、酸化Ｈｆ膜、等）である。また、上層膜９０３は、例えば、バリアメタル膜（例えば、ＴｉＮ膜、ＴａＮ膜、等）、あるいは、メタル膜（例えば、Ａｌ膜、Ｗ膜、ＮｉＳｉ膜、Ｃｕ膜、等）である。もっとも、基板処理装置１で処理対象とされる基板９は、例えば、中心層９０１と下層膜９０２との二層構造を備えるものであってもよいし、４層以上の構造を備えるものであってもよい。 The substrate 9 to be processed by the substrate processing apparatus 1 includes, for example, a center layer 901 made of silicon (Si), a lower layer film 902 formed outside the center layer 901, and an outer side of the lower layer film 902. And a three-layer structure of an upper film 903 formed on the substrate. The surface shape of the substrate 9 is substantially circular. The radius of the substrate 9 is, for example, 150 mm. The lower layer film 902 is, for example, a thermal oxide film (Th-SiO 2 ) or an insulating film (for example, an Hf (Huffenum) film, an Hf oxide film, or the like). The upper film 903 is, for example, a barrier metal film (for example, a TiN film, a TaN film, or the like) or a metal film (for example, an Al film, a W film, a NiSi film, a Cu film, or the like). However, the substrate 9 to be processed by the substrate processing apparatus 1 may have, for example, a two-layer structure of the central layer 901 and the lower layer film 902, or may have a structure of four or more layers. You may.

以下において、基板９の２つの主面のうちのデバイスパターンが形成される方の面を「上面９１」という。また、上面９１の反対側の面を「下面９２」という。さらに、上面９１における、デバイスパターンが形成される領域を「デバイス領域９０」という。また、上面９１における、デバイス領域９０よりも外側の周縁領域を「上面周縁部９１１」という。上面周縁部９１１は、具体的には、例えば、基板９の端（「周縁」）９４から微小幅Ｄ１（例えば、Ｄ１＝０．３ｍｍ〜１．０ｍｍ）の環状の領域である。基板９の端９４は、基板９の表面のうち基板９の径方向に沿って最も外側の部分である。基板９の上面視における端９４の形状は、円形である。また、下面９２における、端９４から微小幅Ｄ１の環状の領域を「下面周縁部９２１」という。上面周縁部９１１と下面周縁部９２１とを合せた領域は、単に「周縁部」とも称される。   Hereinafter, of the two main surfaces of the substrate 9, the surface on which the device pattern is formed is referred to as “upper surface 91”. The surface opposite to the upper surface 91 is referred to as “lower surface 92”. Further, a region on the upper surface 91 where a device pattern is formed is referred to as a “device region 90”. Further, a peripheral region on the upper surface 91 outside the device region 90 is referred to as “upper surface peripheral portion 911”. Specifically, the upper surface peripheral portion 911 is, for example, an annular region having a minute width D1 (for example, D1 = 0.3 mm to 1.0 mm) from the end (“peripheral edge”) 94 of the substrate 9. The end 94 of the substrate 9 is the outermost portion of the surface of the substrate 9 along the radial direction of the substrate 9. The shape of the end 94 of the substrate 9 when viewed from above is circular. Further, an annular region of the lower surface 92 having a minute width D1 from the end 94 is referred to as a “lower surface peripheral portion 921”. A region where the upper surface peripheral portion 911 and the lower surface peripheral portion 921 are combined is also simply referred to as a “peripheral portion”.

基板９の端面９３は、基板９の表面のうち上面９１および下面９２のそれぞれの平坦部を除いた環状の部分である。端面９３は、具体的には、例えば、端９４から微小幅Ｄ２（例えば、Ｄ２＝０．３ｍｍ程度）の環状の領域である。基板９の縦断面において、端面９３は、基板９の径方向に沿って基板９の外側に張り出して湾曲している。端面９３のうち端９４よりも上側の環状の部分は、上側端面９３ａであり、端９４よりも下側の環状の部分は、下側端面９３ｂである。上側端面９３ａは、上面周縁部９１１に含まれ、下側端面９３ｂは、下面周縁部９２１に含まれている。   The end surface 93 of the substrate 9 is an annular portion of the surface of the substrate 9 excluding the flat portions of the upper surface 91 and the lower surface 92. The end face 93 is, for example, an annular area having a minute width D2 (for example, about D2 = 0.3 mm) from the end 94. In the vertical section of the substrate 9, the end surface 93 is curved so as to protrude outside the substrate 9 along the radial direction of the substrate 9. An annular portion of the end surface 93 above the end 94 is an upper end surface 93a, and an annular portion below the end 94 is a lower end surface 93b. The upper end surface 93a is included in the upper peripheral portion 911, and the lower end surface 93b is included in the lower peripheral portion 921.

基板処理装置１は、基板９を処理対象として、その上面周縁部９１１および下側端面９３ｂに対する処理（例えば、上面周縁部９１１および下側端面９３ｂに形成されている薄膜を除去する処理）を行うことができる。   The substrate processing apparatus 1 performs a process on the upper surface peripheral portion 911 and the lower end surface 93b of the substrate 9 (for example, a process of removing a thin film formed on the upper surface peripheral portion 911 and the lower end surface 93b). be able to.

＜３．基板処理装置１の各部の構成＞
＜回転保持機構２＞
回転保持機構２は、基板９を、その一方の主面を上方に向けた状態で、略水平姿勢に保持しつつ回転可能な機構である。回転保持機構２は、基板９を、主面の中心ｃ１を通る鉛直な回転軸ａ１を中心に回転させる。 <3. Configuration of Each Part of Substrate Processing Apparatus>
<Rotation holding mechanism 2>
The rotation holding mechanism 2 is a mechanism that can rotate while holding the substrate 9 in a substantially horizontal posture with one main surface thereof facing upward. The rotation holding mechanism 2 rotates the substrate 9 about a vertical rotation axis a1 passing through the center c1 of the main surface.

回転保持機構２は、基板９より小さい円板状の部材であるスピンチャック（「保持部材」、「基板保持部」）２１を備える。スピンチャック２１は、その上面が略水平となり、その中心軸が回転軸ａ１に一致するように設けられている。スピンチャック２１の下面には、円筒状の回転軸部２２が連結されている。回転軸部２２は、その軸線を鉛直方向に沿わすような姿勢で配置される。回転軸部２２の軸線は、回転軸ａ１と一致する。また、回転軸部２２には、回転駆動部（例えば、サーボモータ）２３が接続される。回転駆動部２３は、回転軸部２２をその軸線まわりに回転駆動する。従って、スピンチャック２１は、回転軸部２２とともに回転軸ａ１を中心に回転可能である。回転駆動部２３と回転軸部２２とは、スピンチャック２１を、回転軸ａ１を中心に回転させる回転機構２３１である。回転軸部２２および回転駆動部２３は、筒状のケーシング２４内に収容されている。   The rotation holding mechanism 2 includes a spin chuck (“holding member”, “substrate holding unit”) 21 which is a disk-shaped member smaller than the substrate 9. The spin chuck 21 is provided such that its upper surface is substantially horizontal and its central axis coincides with the rotation axis a1. A cylindrical rotating shaft 22 is connected to the lower surface of the spin chuck 21. The rotating shaft portion 22 is arranged in a posture such that its axis extends along the vertical direction. The axis of the rotating shaft portion 22 coincides with the rotating shaft a1. Further, a rotation drive unit (for example, a servomotor) 23 is connected to the rotation shaft unit 22. The rotation drive section 23 drives the rotation shaft section 22 to rotate about its axis. Therefore, the spin chuck 21 is rotatable about the rotation axis a1 together with the rotation shaft section 22. The rotation drive unit 23 and the rotation shaft unit 22 are a rotation mechanism 231 that rotates the spin chuck 21 about the rotation shaft a1. The rotation shaft 22 and the rotation drive unit 23 are housed in a cylindrical casing 24.

スピンチャック２１の中央部には、図示省略の貫通孔が設けられており、回転軸部２２の内部空間と連通している。内部空間には、図示省略の配管、開閉弁を介して図示省略のポンプが接続されている。当該ポンプ、開閉弁は、制御部１３０に電気的に接続されている。制御部１３０は、当該ポンプ、開閉弁の動作を制御する。当該ポンプは、制御部１３０の制御に従って、負圧と正圧とを選択的に供給可能である。基板９がスピンチャック２１の上面に略水平姿勢で置かれた状態でポンプが負圧を供給すると、スピンチャック２１は、基板９を下方から吸着保持する。ポンプが正圧を供給すると、基板９は、スピンチャック２１の上面から取り外し可能となる。   A through hole (not shown) is provided in the center of the spin chuck 21 and communicates with the internal space of the rotating shaft 22. A pump (not shown) is connected to the internal space via a pipe (not shown) and an on-off valve. The pump and the on-off valve are electrically connected to the control unit 130. The control unit 130 controls the operation of the pump and the on-off valve. The pump can selectively supply a negative pressure and a positive pressure under the control of the control unit 130. When the pump supplies a negative pressure while the substrate 9 is placed on the upper surface of the spin chuck 21 in a substantially horizontal posture, the spin chuck 21 suction-holds the substrate 9 from below. When the pump supplies a positive pressure, the substrate 9 can be removed from the upper surface of the spin chuck 21.

この構成において、スピンチャック２１が基板９を吸着保持した状態で、回転駆動部２３が回転軸部２２を回転すると、スピンチャック２１が鉛直方向に沿った軸線周りで回転される。これによって、スピンチャック２１上に保持された基板９が、その面内の中心ｃ１を通る鉛直な回転軸ａ１を中心に矢印ＡＲ１方向に回転される。   In this configuration, when the rotation driving unit 23 rotates the rotation shaft unit 22 in a state where the spin chuck 21 suction-holds the substrate 9, the spin chuck 21 is rotated around an axis along the vertical direction. As a result, the substrate 9 held on the spin chuck 21 is rotated in the direction of the arrow AR1 around the vertical rotation axis a1 passing through the center c1 in the plane.

＜飛散防止部３＞
飛散防止部３は、スピンチャック２１とともに回転される基板９から飛散する処理液等を受け止める。 <Splash prevention part 3>
The scattering prevention unit 3 receives a processing liquid or the like scattered from the substrate 9 rotated together with the spin chuck 21.

飛散防止部３は、スプラッシュガード３１を備える。スプラッシュガード３１は、上端が開放された筒形状の部材であり、回転保持機構２を取り囲むように設けられる。なお、スプラッシュガード３１の外側に、回転保持機構２を取り囲むようにガードがさらに設けられてもよい。   The scattering prevention unit 3 includes a splash guard 31. The splash guard 31 is a cylindrical member having an open upper end, and is provided so as to surround the rotation holding mechanism 2. Note that a guard may be further provided outside the splash guard 31 so as to surround the rotation holding mechanism 2.

スプラッシュガード３１は、円環状の底部と、底部の内側縁部から上方に延びる円筒状の内側壁部と、底部の外側縁部から上方に延びる円筒状の外側壁部と、を備える。内側壁部の少なくとも先端付近は、回転保持機構２のケーシング２４に設けられた鍔状部材２４１の内側空間に収容される。外側壁部の上部（「上端側部分」、「上端部分」）は内側上方に向かって延びている。すなわち、当該上部は、回転軸ａ１に向かって斜め上方に延びている。   The splash guard 31 includes an annular bottom, a cylindrical inner wall extending upward from an inner edge of the bottom, and a cylindrical outer wall extending upward from an outer edge of the bottom. At least the vicinity of the front end of the inner wall portion is accommodated in an inner space of a flange member 241 provided on the casing 24 of the rotation holding mechanism 2. The upper portions ("upper end portion" and "upper end portion") of the outer wall portion extend inward and upward. That is, the upper portion extends obliquely upward toward the rotation axis a1.

スプラッシュガード３１の底部には、内側壁部と外側壁部との間の空間と連通する排液溝（図示省略）が形成される。この排液溝は、工場の排液ラインと接続される。また、この排液溝には、溝内を強制的に排気して、内側壁部と外側壁部との間の空間を負圧状態とする排気液機構が接続されている。内側壁部と外側壁部との間の空間は、基板９の処理に使用された処理液を集めて排液するための空間であり、この空間に集められた処理液は、排液溝から排液される。   A drain groove (not shown) communicating with the space between the inner wall and the outer wall is formed at the bottom of the splash guard 31. This drain groove is connected to a drain line in a factory. Further, an exhaust liquid mechanism is connected to the drain groove, forcibly exhausting the inside of the groove, and bringing a space between the inner wall portion and the outer wall portion into a negative pressure state. The space between the inner wall portion and the outer wall portion is a space for collecting and draining the processing liquid used for processing the substrate 9, and the processing liquid collected in this space is discharged from the drain groove. Drained.

スプラッシュガード３１には、これを昇降移動させるガード駆動機構３２が配設されている。ガード駆動機構３２は、例えば、ステッピングモータにより構成される。スプラッシュガード３１は、ガード駆動機構３２の駆動を受けて、各々の上方位置と下方位置との間で移動される。スプラッシュガード３１の上方位置は、スプラッシュガード３１の上端縁部が、スピンチャック２１上に保持された基板９の側方、かつ、上方に配置される位置である。一方、スプラッシュガード３１の下方位置は、スプラッシュガード３１の上端縁部が、スピンチャック２１の上面よりも下方に配置される位置である。基板処理装置１に基板９が搬出入される際は、スプラッシュガード３１は下方位置に配置される。ガード駆動機構３２は、制御部１３０と電気的に接続されており、制御部１３０の制御下で動作する。つまり、スプラッシュガード３１の位置は、制御部１３０によって制御される。   The splash guard 31 is provided with a guard driving mechanism 32 for moving the splash guard 31 up and down. The guard drive mechanism 32 is configured by, for example, a stepping motor. The splash guard 31 is moved between the upper position and the lower position by the drive of the guard driving mechanism 32. The upper position of the splash guard 31 is a position in which the upper edge of the splash guard 31 is arranged on the side and above the substrate 9 held on the spin chuck 21. On the other hand, the position below the splash guard 31 is a position where the upper edge of the splash guard 31 is disposed below the upper surface of the spin chuck 21. When the substrate 9 is carried in and out of the substrate processing apparatus 1, the splash guard 31 is disposed at a lower position. The guard drive mechanism 32 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the splash guard 31 is controlled by the control unit 130.

なお、基板処理装置１が飛散防止部３を備えていないとしても本発明の有用性を損なうものではない。   In addition, even if the substrate processing apparatus 1 is not provided with the scattering prevention unit 3, it does not impair the usefulness of the present invention.

＜処理部５＞
処理部５は、スピンチャック２１上に保持された基板９の上面周縁部９１１および下側端面９３ｂに対する処理を行う。具体的には、処理部５は、スピンチャック２１上に保持された基板９の上面周縁部９１１に処理液を供給する。処理部５は、ノズル保持部材５０、ノズル５１、別部材５２、および処理液供給部８３を備えている。 <Processing unit 5>
The processing unit 5 performs processing on the upper peripheral edge 911 and the lower end surface 93 b of the substrate 9 held on the spin chuck 21. Specifically, the processing unit 5 supplies the processing liquid to the upper peripheral edge 911 of the substrate 9 held on the spin chuck 21. The processing unit 5 includes a nozzle holding member 50, a nozzle 51, another member 52, and a processing liquid supply unit 83.

ノズル保持部材５０は、ノズル５１と別部材５２とを一体的に保持する部材である。ノズル保持部材５０は、後述するノズル移動機構６が備える長尺のアーム６３の先端に取り付けられている。アーム６３は、水平面に沿って延在する。   The nozzle holding member 50 is a member that integrally holds the nozzle 51 and another member 52. The nozzle holding member 50 is attached to a distal end of a long arm 63 provided in the nozzle moving mechanism 6 described later. The arm 63 extends along a horizontal plane.

ノズル保持部材５０は、例えば、鉛直面に沿って延在する板状部材と、当該板状部材の上端から突出する突出部材とが接合されて形成されている。当該板状部材の上端は、アーム６３の先端に取り付けられている。当該突出部材は、当該板状部材に対してアーム６３と反対側に、アーム６３の延在方向に沿って突出している。ノズル５１は、当該突出部材の先端に取り付けられている。ノズル保持部材５０の板状部材の下端には、別部材５２が取り付けられている。   The nozzle holding member 50 is formed, for example, by joining a plate-like member extending along a vertical plane and a projecting member projecting from an upper end of the plate-like member. The upper end of the plate member is attached to the tip of the arm 63. The protruding member protrudes from the plate-shaped member on the side opposite to the arm 63 along the extending direction of the arm 63. The nozzle 51 is attached to the tip of the protruding member. Another member 52 is attached to the lower end of the plate-shaped member of the nozzle holding member 50.

ノズル５１は、スピンチャック２１上に保持されて回転している基板９の上面周縁部９１１の一部に当たるように処理液の液流Ｌ１を吐出する。液流Ｌ１は、ノズル５１の吐出口から液柱状の形状で吐出される。ノズル５１の先端部（下端部）は、下方に突出しており先端に吐出口を備える。当該吐出口は、別部材５２の上面に対向している。ノズル５１には、これに処理液を供給する配管系である処理液供給部８３が接続されている。具体的には、ノズル５１の上端には、処理液供給部８３の配管８３２の一端が接続している。ノズル５１は、処理液供給部８３から処理液を供給され、供給された処理液の液流Ｌ１を先端の吐出口から液柱状の形状で吐出する。ノズル５１は、少なくとも一部が別部材５２の上面に含まれる吐出目標領域５２１に当たるように吐出目標領域５２１の上方から処理液を吐出する。   The nozzle 51 discharges the liquid flow L1 of the processing liquid so as to hit a part of the upper surface peripheral portion 911 of the substrate 9 held on the spin chuck 21 and rotating. The liquid flow L1 is discharged from the discharge port of the nozzle 51 in a liquid column shape. The tip (lower end) of the nozzle 51 protrudes downward and has a discharge port at the tip. The discharge port faces the upper surface of the separate member 52. The processing liquid supply unit 83 which is a piping system for supplying the processing liquid to the nozzle 51 is connected to the nozzle 51. Specifically, one end of a pipe 832 of the processing liquid supply unit 83 is connected to an upper end of the nozzle 51. The nozzle 51 is supplied with the processing liquid from the processing liquid supply unit 83, and discharges the supplied liquid stream L1 of the processing liquid from the discharge port at the tip in a liquid column shape. The nozzle 51 discharges the processing liquid from above the discharge target area 521 so that at least a part thereof hits the discharge target area 521 included in the upper surface of the separate member 52.

処理液供給部８３は、ノズル５１に処理液を供給する。処理液供給部８３は、具体的には、処理液供給源８３１、配管８３２、および開閉弁８３３を、組み合わせて構成されている。処理液には、薬液とリンス液とが含まれる。薬液として、例えば、ＳＣ−１、ＤＨＦ、ＳＣ−２などが用いられる。リンス液として、例えば、純水、温水、オゾン水、磁気水、還元水（水素水）、各種の有機溶剤（イオン水、ＩＰＡ（イソプロピルアルコール）、機能水（ＣＯ２水など）、などが用いられる。 The processing liquid supply unit 83 supplies the processing liquid to the nozzle 51. Specifically, the processing liquid supply unit 83 is configured by combining a processing liquid supply source 831, a pipe 832, and an on-off valve 833. The treatment liquid includes a chemical liquid and a rinse liquid. As the chemical solution, for example, SC-1, DHF, SC-2, or the like is used. As the rinsing liquid, for example, pure water, warm water, ozone water, magnetic water, reduced water (hydrogen water), various organic solvents (ion water, IPA (isopropyl alcohol), functional water (CO 2 water, etc.), etc. are used. Can be

処理液供給部８３から処理液がノズル５１に供給されると、ノズル５１は当該処理液の液流Ｌ１を吐出する。ただし、処理液供給部８３が備える開閉弁８３３は、制御部１３０と電気的に接続されている図示省略のバルブ開閉機構によって、制御部１３０の制御下で開閉される。つまり、ノズル５１からの処理液の吐出態様（具体的には、吐出される処理液の吐出開始タイミング、吐出終了タイミング、吐出流量、等）は、制御部１３０によって制御される。すなわち、処理部５のノズル５１は、制御部１３０の制御によって、回転軸ａ１を中心に回転している基板９の上面周縁部９１１に当たるように処理液の液流Ｌ１を吐出する。   When the processing liquid is supplied from the processing liquid supply unit 83 to the nozzle 51, the nozzle 51 discharges a liquid flow L1 of the processing liquid. However, the opening / closing valve 833 provided in the processing liquid supply unit 83 is opened / closed under the control of the control unit 130 by a valve opening / closing mechanism (not shown) electrically connected to the control unit 130. That is, the discharge mode of the processing liquid from the nozzle 51 (specifically, the discharge start timing, the discharge end timing, the discharge flow rate, etc., of the discharged processing liquid) is controlled by the control unit 130. That is, the nozzle 51 of the processing unit 5 discharges the liquid flow L1 of the processing liquid under the control of the control unit 130 so as to hit the peripheral edge 911 of the upper surface of the substrate 9 rotating about the rotation axis a1.

別部材５２は、スピンチャック２１に保持されている基板９の端面９３と隙間を隔てて基板９の径方向に沿って基板９の外側に配置される部材である。より詳細には、別部材５２の重心が基板９の径方向に沿って基板９の外側に配置される。別部材５２の上面には、吐出目標領域５２１の少なくとも一部が含まれる。別部材５２の構成および他の構成例については、後述する。   The separate member 52 is a member arranged outside the substrate 9 along the radial direction of the substrate 9 with a gap from the end surface 93 of the substrate 9 held by the spin chuck 21. More specifically, the center of gravity of the separate member 52 is arranged outside the substrate 9 along the radial direction of the substrate 9. The upper surface of the separate member 52 includes at least a part of the discharge target area 521. The configuration of the separate member 52 and other configuration examples will be described later.

＜ノズル移動機構６＞
ノズル移動機構６は、ノズル５１および別部材５２をそれぞれの処理位置と退避位置との間で移動させる機構である。ノズル移動機構６は、水平に延在するアーム６３、ノズル基台６６、昇降駆動部６８、回転駆動部６９を備える。ノズル保持部材５０は、アーム６３の先端部分に取り付けられている。 <Nozzle moving mechanism 6>
The nozzle moving mechanism 6 is a mechanism for moving the nozzle 51 and the separate member 52 between the respective processing positions and the retracted positions. The nozzle moving mechanism 6 includes a horizontally extending arm 63, a nozzle base 66, an elevating drive unit 68, and a rotation drive unit 69. The nozzle holding member 50 is attached to the tip of the arm 63.

アーム６３の基端部は、ノズル基台６６の上端部分に連結されている。ノズル基台６６は、その軸線を鉛直方向に沿わすような姿勢でケーシング２４の外側に配置されている。ノズル基台６６は、その軸線に沿って鉛直方向に延在し、軸線周りに回転可能な回転軸を備えている。ノズル基台６６の軸線と回転軸の軸線とは一致する。回転軸の上端には、ノズル基台６６の上端部分が取り付けられている。回転軸が回転することにより、ノズル基台６６の上端部分は回転軸の軸線、すなわちノズル基台６６の軸線を中心に回転する。ノズル基台６６には、その回転軸を当該軸線を中心に回転させる回転駆動部６９が設けられている。回転駆動部６９は、例えば、サーボモータなどを備えて構成される。   The base end of the arm 63 is connected to the upper end of the nozzle base 66. The nozzle base 66 is disposed outside the casing 24 in a posture such that its axis is along the vertical direction. The nozzle base 66 has a rotating shaft that extends in the vertical direction along the axis and is rotatable around the axis. The axis of the nozzle base 66 coincides with the axis of the rotating shaft. The upper end of the nozzle base 66 is attached to the upper end of the rotation shaft. As the rotating shaft rotates, the upper end portion of the nozzle base 66 rotates about the axis of the rotating shaft, that is, the axis of the nozzle base 66. The nozzle base 66 is provided with a rotation drive unit 69 for rotating the rotation axis about the axis. The rotation drive unit 69 is configured to include, for example, a servomotor.

また、ノズル基台６６には、昇降駆動部６８が設けられている。昇降駆動部６８は、例えば、サーボモータなどを備えて構成される。昇降駆動部６８は、その出力軸に連結されたボールねじを有するボールねじ機構などを介して、ノズル基台６６の回転軸をその軸線に沿って昇降させる。   Further, the nozzle base 66 is provided with a lifting drive unit 68. The elevating drive unit 68 includes, for example, a servomotor. The elevation drive unit 68 elevates and lowers the rotation axis of the nozzle base 66 along its axis via a ball screw mechanism having a ball screw connected to the output shaft.

回転駆動部６９は、ノズル基台６６の回転軸を介してノズル基台６６の上端部分を回転させる。当該上端部分の回転に伴って、ノズル保持部材５０もノズル基台６６の軸線周りに回転する。これにより、回転駆動部６９は、ノズル５１および別部材５２を水平移動させる。すなわち、回転駆動部６９は、別部材５２を基板９の径方向に移動可能な「径方向駆動部」である。   The rotation drive section 69 rotates the upper end portion of the nozzle base 66 via the rotation axis of the nozzle base 66. With the rotation of the upper end portion, the nozzle holding member 50 also rotates around the axis of the nozzle base 66. Thereby, the rotation drive unit 69 horizontally moves the nozzle 51 and the separate member 52. That is, the rotation drive unit 69 is a “radial drive unit” that can move the separate member 52 in the radial direction of the substrate 9.

昇降駆動部６８は、ノズル基台６６の回転軸をその軸線に沿って昇降させることによって、ノズル保持部材５０、すなわちノズル５１および別部材５２を昇降させる。昇降駆動部６８と回転駆動部６９とは、協働して、スピンチャック２１に保持された基板９の近傍の処理位置と、処理位置から基板９の径方向に沿って外側、かつ、上方の待避位置との間で、ノズル保持部材５０を移動させる。ノズル保持部材５０が処理位置に配置されると、ノズル５１および別部材５２がそれぞれの処理位置に配置される。   The elevation drive unit 68 elevates and lowers the nozzle holding member 50, that is, the nozzle 51 and the separate member 52, by elevating and lowering the rotation axis of the nozzle base 66 along the axis thereof. The elevating drive unit 68 and the rotation drive unit 69 cooperate with each other, in a processing position near the substrate 9 held by the spin chuck 21, and in an outer and upper direction along the radial direction of the substrate 9 from the processing position. The nozzle holding member 50 is moved between the retracted position. When the nozzle holding member 50 is disposed at the processing position, the nozzle 51 and the separate member 52 are disposed at the respective processing positions.

ノズル保持部材５０、ノズル５１および別部材５２のそれぞれの待避位置は、これらが基板９の搬送経路と干渉せず、かつ、これらが相互に干渉しない各位置である。各退避位置は、例えば、スプラッシュガード３１の外側、かつ、上方の位置である。   The retracted positions of the nozzle holding member 50, the nozzle 51, and the separate member 52 are positions where they do not interfere with the transport path of the substrate 9 and do not interfere with each other. Each retreat position is, for example, a position outside and above the splash guard 31.

駆動部６８、６９は、制御部１３０と電気的に接続されており、制御部１３０の制御下で動作する。つまり、ノズル保持部材５０の位置は、制御部１３０によって制御される。すなわち、ノズル５１および別部材５２の位置は、制御部１３０によって制御される。   The driving units 68 and 69 are electrically connected to the control unit 130 and operate under the control of the control unit 130. That is, the position of the nozzle holding member 50 is controlled by the control unit 130. That is, the positions of the nozzle 51 and the separate member 52 are controlled by the control unit 130.

＜４．別部材５２の構成と、別部材の他の構成例＞
図４は、Ａ１−Ａ１切断線（図２）における別部材５２と基板９の周縁部の断面模式図である。図５は、図４の位置関係とは異なる位置関係に配置された別部材５２と基板９とを説明するための断面模式図である。図６〜図９は、他の実施形態に係る別部材５２Ａ〜５２Ｄを説明するための断面模式図である。図４〜図９は、縦断面図によって示されている。図１０は、別部材５２における吐出目標領域５２１の例を示す上面模式図である。別部材５２における吐出目標領域５２１の他の配置例を示す上面模式図である。図１２は、別部材５２の他の構成例として別部材５２Ｅを説明するための上面模式図である。 <4. Configuration of separate member 52 and another configuration example of separate member>
FIG. 4 is a schematic cross-sectional view of another member 52 and the peripheral portion of the substrate 9 taken along the line A1-A1 (FIG. 2). FIG. 5 is a schematic cross-sectional view for explaining another member 52 and the substrate 9 arranged in a positional relationship different from the positional relationship in FIG. 6 to 9 are schematic cross-sectional views illustrating another member 52A to 52D according to another embodiment. 4 to 9 are shown by longitudinal sectional views. FIG. 10 is a schematic top view showing an example of the discharge target area 521 in the separate member 52. FIG. 11 is a schematic top view showing another example of the arrangement of the discharge target area 521 on another member 52. FIG. 12 is a schematic top view for explaining another member 52 </ b> E as another configuration example of the separate member 52.

図４に示されるように、別部材５２は、軸線が基板９の周方向に略沿って延在する三角柱状の部材である。別部材５２の縦断面は、略三角形である。別部材５２は、上面５３、外側面５４、内側面（「対向面」）５５、側面５７、側面５８を備える。   As shown in FIG. 4, the separate member 52 is a triangular prism-shaped member whose axis extends substantially along the circumferential direction of the substrate 9. The vertical section of the separate member 52 is substantially triangular. The separate member 52 includes an upper surface 53, an outer surface 54, an inner surface (“opposing surface”) 55, a side surface 57, and a side surface 58.

上面５３は、略水平な矩形の面である。外側面５４は、別部材５２のうち基板９の径方向に沿って最も外側の面であり、基板９の径方向に対して略垂直に設けられている。内側面５５は、基板９の端面９３に対向しており、その下端から上端に向かって回転軸ａ１に近づくように回転軸ａ１に対して傾斜している。側面５７、５８は、上面５３および外側面５４のそれぞれと垂直な略三角形状の面である。側面５７、５８は、互いに平行でもよいし、基板９の径方向に沿ってそれぞれ延在していてもよい。上面５３の回転軸ａ１側の内側端は、基板９の端９４、すなわち周縁よりも基板９の径方向に沿って回転軸ａ１側に位置する。当該内側端は、基板９の上面周縁部９１１の上方に位置している。   The upper surface 53 is a substantially horizontal rectangular surface. The outer side surface 54 is the outermost surface of the separate member 52 along the radial direction of the substrate 9, and is provided substantially perpendicular to the radial direction of the substrate 9. The inner side surface 55 faces the end surface 93 of the substrate 9 and is inclined with respect to the rotation axis a1 so as to approach the rotation axis a1 from the lower end toward the upper end. The side surfaces 57 and 58 are substantially triangular surfaces perpendicular to the upper surface 53 and the outer surface 54, respectively. The side surfaces 57 and 58 may be parallel to each other, or may extend along the radial direction of the substrate 9. The inner end of the upper surface 53 on the rotation axis a1 side is located closer to the rotation axis a1 along the radial direction of the substrate 9 than the end 94 of the substrate 9, that is, the periphery. The inner end is located above the upper peripheral edge 911 of the substrate 9.

基板９の径方向における別部材５２の長さＤ５（図１０）は、例えば、約１０ｍｍである。基板９の端９４の接線方向における別部材５２の長さＤ６（図１０）は、例えば、約２０ｍｍである。回転軸ａ１に沿う別部材５２の高さＤ７（図４）は、例えば、約５ｍｍである。   The length D5 (FIG. 10) of the separate member 52 in the radial direction of the substrate 9 is, for example, about 10 mm. The length D6 (FIG. 10) of the separate member 52 in the tangential direction of the end 94 of the substrate 9 is, for example, about 20 mm. The height D7 (FIG. 4) of the separate member 52 along the rotation axis a1 is, for example, about 5 mm.

なお、別部材５２に代えて、例えば、図１２に示される別部材５２Ｅが採用されてもよい。別部材５２Ｅは、基板９の端面９３と隙間を空けて対向する内側面を備え、当該内側面が基板９の周縁（端９４）に沿って基板９の周方向に弧状に延在している。これにより、上面周縁部９１１における処理幅の均一性を向上できる。   Note that, instead of the separate member 52, for example, a separate member 52E illustrated in FIG. 12 may be employed. The separate member 52E has an inner surface facing the end surface 93 of the substrate 9 with a gap, and the inner surface extends along the periphery (end 94) of the substrate 9 in an arc shape in the circumferential direction of the substrate 9. . Thereby, the uniformity of the processing width in the upper peripheral portion 911 can be improved.

別部材５２には、略円形の吐出目標領域５２１が含まれている。吐出目標領域５２１は、仮想の領域である。ノズル５１から吐出される処理液の液流Ｌ１の径は、吐出目標領域５２１の径Ｄ３とほぼ同じ長さである。径Ｄ３は、基板９の端面９３の幅Ｄ２と略同じ長さである。図４、図１０に示されるように、吐出目標領域５２１の全てが、別部材５２の上面５３に含まれている。図１１に示されるように、基板９の上面視において、吐出目標領域５２１のうち一部が別部材５２の上面５３の内側端から回転軸ａ１側にはみ出していてもよい。   The separate member 52 includes a substantially circular discharge target area 521. The ejection target area 521 is a virtual area. The diameter of the liquid flow L1 of the processing liquid discharged from the nozzle 51 is substantially the same as the diameter D3 of the discharge target area 521. The diameter D3 is substantially the same as the width D2 of the end surface 93 of the substrate 9. As shown in FIGS. 4 and 10, the entire discharge target area 521 is included in the upper surface 53 of the separate member 52. As illustrated in FIG. 11, in the top view of the substrate 9, a part of the discharge target area 521 may protrude from the inner end of the upper surface 53 of the separate member 52 toward the rotation axis a1.

図４に示されるように、ノズル５１から液流Ｌ１として吐出目標領域５２１に当たるように吐出された処理液は、吐出目標領域５２１から上面５３上で周囲に拡がる。一部の処理液は、上面５３を流れて上面５３の回転軸ａ１側の内側端から別部材５２の外部に排出される。別部材５２と基板９の端面９３との隙間９７（図４）は、排出された処理液が、基板９の上面周縁部９１１に上方から当たるように設定されている。従って、当該処理液は、上面周縁部９１１に上方から上面周縁部９１１に当たる。上面周縁部９１１の平坦部と上側端面９３ａとの境界と、内側面５５との基板９の径方向に沿った距離Ｄ４は、端面９３の幅Ｄ２と略同じ長さである。   As shown in FIG. 4, the processing liquid discharged from the nozzle 51 as the liquid flow L1 so as to hit the discharge target area 521 spreads from the discharge target area 521 on the upper surface 53 to the periphery. Some of the processing liquid flows through the upper surface 53 and is discharged to the outside of the separate member 52 from the inner end of the upper surface 53 on the side of the rotation axis a1. The gap 97 (FIG. 4) between the separate member 52 and the end surface 93 of the substrate 9 is set so that the discharged processing liquid hits the upper peripheral edge 911 of the substrate 9 from above. Therefore, the processing liquid impinges on the upper surface peripheral portion 911 from above. The distance D4 along the radial direction of the substrate 9 from the boundary between the flat portion of the upper surface peripheral portion 911 and the upper end surface 93a and the inner side surface 55 is substantially the same as the width D2 of the end surface 93.

上面周縁部９１１に当たった処理液は、隙間９７を通って、基板９の端面９３に沿って下方に流れる。これにより、基板９の上面周縁部９１１のうち処理液が当たった部分よりも端９４側の部分および下側端面９３ｂが処理液によって処理される。   The processing liquid that has hit the upper peripheral edge 911 flows downward along the end surface 93 of the substrate 9 through the gap 97. As a result, the portion of the upper surface peripheral portion 911 of the substrate 9 closer to the end 94 than the portion to which the processing liquid has hit and the lower end surface 93b are processed by the processing liquid.

図５に示されるように、別部材５２の上面５３が基板９の上面９１の平坦部とほぼ同じ高さの水平面となるように別部材５２が配置されてもよい。図５では、上面周縁部９１１の平坦部と上側端面９３ａとの境界と、内側面５５との基板９の径方向に沿った距離Ｄ４は、図４と同様に、端面９３の幅Ｄ２と略同じ長さである。この距離Ｄ４は、当該境界から、別部材５２の上面５３の内側端までの距離である。   As shown in FIG. 5, the separate member 52 may be arranged such that the upper surface 53 of the separate member 52 is a horizontal plane having substantially the same height as the flat portion of the upper surface 91 of the substrate 9. In FIG. 5, the distance D4 along the radial direction of the substrate 9 between the boundary between the flat portion of the upper surface peripheral portion 911 and the upper end surface 93a and the inner side surface 55 is substantially equal to the width D2 of the end surface 93, as in FIG. They are the same length. The distance D4 is a distance from the boundary to the inner end of the upper surface 53 of the separate member 52.

また、別部材５２に代えて図６に示される別部材５２Ａが採用されてもよい。別部材５２Ａは、水平な上面５３Ａと、鉛直面である外側面５４Ａとを備える。上面５３Ａ、外側面５４Ａは、別部材５２（図４）の上面５３、外側面５４と、同様に構成されている。別部材５２Ａは、別部材５２の内側面５５に代えて、基板９の端面９３に対向する内側面５５Ａを備えている。内側面５５Ａは、その下端から上端に向かって回転軸ａ１に近づくとともに、回転軸ａ１に対して斜め上方に張り出して湾曲している。また、別部材５２Ａは、内側面５５Ａおよび外側面５４Ａの下端を接続し、上面５３Ａに平行な下面５６Ａを備えている。   Further, instead of the separate member 52, a separate member 52A shown in FIG. 6 may be employed. The separate member 52A includes a horizontal upper surface 53A and a vertical outer surface 54A. The upper surface 53A and the outer surface 54A are configured similarly to the upper surface 53 and the outer surface 54 of the separate member 52 (FIG. 4). The different member 52A has an inner surface 55A facing the end surface 93 of the substrate 9 instead of the inner surface 55 of the different member 52. The inner side surface 55A approaches the rotation axis a1 from the lower end toward the upper end, and projects obliquely upward with respect to the rotation axis a1 and is curved. Further, the separate member 52A connects the lower ends of the inner side surface 55A and the outer side surface 54A and has a lower surface 56A parallel to the upper surface 53A.

また、別部材５２に代えて図７に示される別部材５２Ｂが採用されてもよい。別部材５２Ｂは、別部材５２の上面５３、外側面５４と略同様に構成された上面５３Ｂ、外側面５４Ｂとを備えるとともに、上面５３Ｂと平行な下面５６Ｂを備える。下面５６Ｂは、上面５３Ｂと同じ形状および大きさに形成されている。別部材５２Ｂは、さらに、別部材５２の内側面５５に代えて、基板９の端面９３に対向する内側面５５Ｂを備える。回転軸ａ１を含む平面における内側面５５Ｂの断面形状は、基板９の端面９３に沿って湾曲している。上面５３Ｂは、基板９の上面９１よりも上方に位置し、下面５６Ｂは、基板９の下面９２よりも下方に位置している。   Further, a separate member 52B shown in FIG. 7 may be employed instead of the separate member 52. The separate member 52B includes an upper surface 53B and an outer surface 54B substantially similar to the upper surface 53 and the outer surface 54 of the different member 52, and includes a lower surface 56B parallel to the upper surface 53B. The lower surface 56B is formed in the same shape and size as the upper surface 53B. The different member 52B further includes an inner surface 55B facing the end surface 93 of the substrate 9 instead of the inner surface 55 of the different member 52. The cross-sectional shape of the inner side surface 55 </ b> B in a plane including the rotation axis a <b> 1 is curved along the end surface 93 of the substrate 9. The upper surface 53B is located above the upper surface 91 of the substrate 9, and the lower surface 56B is located below the lower surface 92 of the substrate 9.

また、別部材５２に代えて図８に示される別部材５２Ｃが採用されてもよい。別部材５２Ｃは、別部材５２Ｂが、回転軸ａ１方向に沿って縮められた形状を有している。別部材５２Ｃは、上面５３Ｃ、下面５６Ｃ、外側面５４Ｃ、および内側面５５Ｃを備えている。   Further, another member 52C shown in FIG. 8 may be employed instead of the separate member 52. The separate member 52C has a shape in which the separate member 52B is contracted along the direction of the rotation axis a1. The separate member 52C includes an upper surface 53C, a lower surface 56C, an outer surface 54C, and an inner surface 55C.

上面５３Ｃは、別部材５２Ｂの上面５３Ｂと同一形状を有する水平面である。下面５６Ｃは、別部材５２Ｂの下面５６Ｂと同一形状を有する水平面である。上面５３Ｃは、基板９の上面９１の平坦部と同じ水平面に含まれる。下面５６Ｃは、基板９の下面９２の平坦部と同じ水平面に含まれる。外側面５４Ｃは、鉛直面である。内側面５５Ｃは、上面５３Ｃと下面５６Ｃとのそれぞれの内側端を接続して形成されている。回転軸ａ１を含む平面における内側面５５Ｃの断面形状は、基板９の端面９３に沿って湾曲している。   The upper surface 53C is a horizontal surface having the same shape as the upper surface 53B of the separate member 52B. The lower surface 56C is a horizontal surface having the same shape as the lower surface 56B of the separate member 52B. The upper surface 53C is included in the same horizontal plane as the flat portion of the upper surface 91 of the substrate 9. The lower surface 56C is included in the same horizontal plane as the flat portion of the lower surface 92 of the substrate 9. The outer side surface 54C is a vertical surface. The inner side surface 55C is formed by connecting the respective inner ends of the upper surface 53C and the lower surface 56C. The cross-sectional shape of the inner side surface 55 </ b> C in a plane including the rotation axis a <b> 1 is curved along the end surface 93 of the substrate 9.

また、別部材５２に代えて図９に示される別部材５２Ｄが採用されてもよい。別部材５２Ｄは、上面５３Ｄ、下面５６Ｄ、外側面５４Ｄ、および内側面５５Ｄを備えている。別部材５２Ｄは、別部材５２Ｃの湾曲している内側面５５Ｃに代えて、鉛直面である内側面５５Ｄを備えている。内側面５５Ｄは、基板９の径方向に対して垂直である。別部材５２Ｄは、直方体状の形状を備えている。上面５３Ｄ、下面５６Ｄは、別部材５２Ｃの上面５３Ｃ、下面５６Ｃと同一の形状を有している。上面５３Ｄは、基板９の上面９１の平坦部と同じ水平面に含まれ、下面５６Ｄは、下面９２の平坦部と同じ水平面に含まれている。内側面５５Ｄが平面であるため、基板９の端面９３の端９４と、内側面５５Ｄとの間には、隙間が設けられている。このため、上面周縁部９１１の平坦部と上側端面９３ａとの境界と、内側面５５Ｄとの距離（基板９の径方向の距離）Ｄ４は、端面９３の幅Ｄ２よりも長くなっている。しかしながら、別部材５２Ｄ上の吐出目標領域５２１に吐出された処理液の一部は、上面５３Ｄの内側端から端面９３に当たる。これにより、上面周縁部９１１および下側端面９３ｂのうち基板９の端９４の近傍の細幅の領域を処理することができる。なお、基板処理装置１は、ノズル保持部材５０によってノズル５１と別部材５２とを一体的に保持して移動させるが、基板処理装置１がノズル保持部材５０を備えず、ノズル５１、別部材５２のそれぞれに対して昇降機構、基板９の径方向への移動機構が個別に設けられてもよい。   Further, another member 52D shown in FIG. 9 may be employed instead of the separate member 52. The separate member 52D includes an upper surface 53D, a lower surface 56D, an outer surface 54D, and an inner surface 55D. The separate member 52D includes a vertical inner surface 55D instead of the curved inner surface 55C of the separate member 52C. The inner side surface 55D is perpendicular to the radial direction of the substrate 9. The separate member 52D has a rectangular parallelepiped shape. The upper surface 53D and the lower surface 56D have the same shape as the upper surface 53C and the lower surface 56C of the separate member 52C. The upper surface 53D is included in the same horizontal plane as the flat portion of the upper surface 91 of the substrate 9, and the lower surface 56D is included in the same horizontal plane as the flat portion of the lower surface 92. Since the inner side surface 55D is a flat surface, a gap is provided between the end 94 of the end surface 93 of the substrate 9 and the inner side surface 55D. Therefore, the distance D4 (the radial distance of the substrate 9) D4 between the boundary between the flat portion of the upper surface peripheral portion 911 and the upper end surface 93a and the inner side surface 55D is longer than the width D2 of the end surface 93. However, a part of the processing liquid discharged to the discharge target area 521 on the separate member 52D hits the end face 93 from the inner end of the upper surface 53D. Accordingly, a narrow region near the end 94 of the substrate 9 in the upper peripheral portion 911 and the lower end surface 93b can be processed. The substrate processing apparatus 1 moves the nozzle 51 and the separate member 52 while integrally holding the nozzle 51 and the separate member 52 by the nozzle holding member 50. However, the substrate processing apparatus 1 does not include the nozzle holding member 50, and the nozzle 51 and the separate member 52 are not provided. A lifting mechanism and a moving mechanism for moving the substrate 9 in the radial direction may be individually provided for each of them.

＜５．基板処理装置の動作について＞
図１４は、基板処理装置１の動作の一例を示すフローチャートである。図１５は、図１４のフローチャートに示される動作を説明するための図である。 <5. Operation of substrate processing equipment>
FIG. 14 is a flowchart illustrating an example of the operation of the substrate processing apparatus 1. FIG. 15 is a diagram for explaining the operation shown in the flowchart of FIG.

以下に、図１４〜図１５を参照しつつ、基板処理装置１の動作の一例を説明する。当該動作例は、ノズル５１および別部材５２をそれぞれの処理位置に配置して、ノズル５１から基板９の上面周縁部９１１に処理液を吐出する動作である。図１４の動作フローの開始に先立って、ノズル５１および別部材５２は、例えば、待避位置に配置されており、スピンチャック２１は、基板９を保持しているが、回転をしていないこととする。   Hereinafter, an example of the operation of the substrate processing apparatus 1 will be described with reference to FIGS. The operation example is an operation in which the nozzle 51 and the separate member 52 are arranged at respective processing positions, and the processing liquid is discharged from the nozzle 51 to the upper surface peripheral portion 911 of the substrate 9. Prior to the start of the operation flow in FIG. 14, the nozzle 51 and the separate member 52 are disposed, for example, at the retreat position, and the spin chuck 21 holds the substrate 9 but does not rotate. I do.

基板処理装置１の制御部１３０は、回転機構２３１を制御して、回転軸ａ１を中心にスピンチャック２１の回転を開始させる（図１４、図１５のステップＳ１１０）。当該回転は、例えば、２０００ｒｐｍの回転速度で行われる。   The control unit 130 of the substrate processing apparatus 1 controls the rotation mechanism 231 to start rotation of the spin chuck 21 about the rotation axis a1 (Step S110 in FIGS. 14 and 15). The rotation is performed, for example, at a rotation speed of 2000 rpm.

制御部１３０は、昇降駆動部６８、回転駆動部６９を制御して、ノズル保持部材５０を待避位置から、処理位置に対して、基板９の側方（基板９の径方向）の外側位置に配置する。昇降駆動部６８、回転駆動部６９は、ノズル５１、別部材５２を、それぞれの待避位置から、それぞれの外側位置に配置する（図１４、図１５のステップＳ１２０）。ノズル５１、別部材５２のそれぞれの外側位置は、それぞれの処理位置に対して基板９の側方（径方向）の外側に位置する。   The control unit 130 controls the elevation drive unit 68 and the rotation drive unit 69 to move the nozzle holding member 50 from the retreat position to a position outside the substrate 9 (in the radial direction of the substrate 9) with respect to the processing position. Deploy. The lifting drive unit 68 and the rotation drive unit 69 dispose the nozzle 51 and the separate member 52 from the respective retracted positions to respective outer positions (step S120 in FIGS. 14 and 15). The outer positions of the nozzle 51 and the separate member 52 are located outside (laterally) the side of the substrate 9 with respect to the respective processing positions.

制御部１３０は、処理部５を制御してノズル５１に、別部材５２上の吐出目標領域５２１への処理液の吐出を開始させる（図１４、図１５のステップＳ１３０）。ノズル５１から別部材５２の吐出目標領域５２１に吐出された処理液は、別部材５２の上面５３に沿って拡がり、別部材５２の内側端から別部材５２の外部に排出される。しかし、ノズル５１、別部材５２は、それぞれの外側位置に配置されているため、別部材５２の外部に排出された処理液は、基板９の上面周縁部９１１に当たらない。   The control unit 130 controls the processing unit 5 to cause the nozzle 51 to start discharging the processing liquid to the discharge target area 521 on the separate member 52 (Step S130 in FIGS. 14 and 15). The processing liquid discharged from the nozzle 51 to the discharge target area 521 of the separate member 52 spreads along the upper surface 53 of the separate member 52, and is discharged from the inside end of the separate member 52 to the outside of the separate member 52. However, since the nozzle 51 and the separate member 52 are arranged at respective outer positions, the processing liquid discharged to the outside of the separate member 52 does not hit the upper surface peripheral portion 911 of the substrate 9.

制御部１３０は、ノズル５１による処理液の液流Ｌ１の吐出状態が安定するまで待つ（図１４、図１５のステップＳ１４０）。当該待ち時間は、例えば、予め、実験等によって取得され、制御部１３０のＲＯＭ等に記憶されている。   The control unit 130 waits until the ejection state of the processing liquid flow L1 by the nozzle 51 is stabilized (step S140 in FIGS. 14 and 15). The waiting time is obtained in advance by an experiment or the like, for example, and stored in the ROM of the control unit 130 or the like.

制御部１３０は、回転駆動部６９を制御して、ノズル保持部材５０を基板９の径方向に沿って基板９の端面９３側の処理位置に配置する。これにより、回転駆動部６９は、ノズル５１、別部材５２を基板９の側方、より詳細には、端面９３の側方のそれぞれの処理位置（「内側位置」とも称される）に配置する（図１４、図１５のステップＳ１５０）。各処理位置へのノズル５１、別部材５２の移動の過程で、ノズル５１は処理液を吐出し続ける。このため、ノズル５１、別部材５２がそれぞれの処理位置に配置されたときは、吐出目標領域５２１に吐出される処理液の液流Ｌ１の吐出状態は安定した状態である。すなわち、吐出目標領域５２１から別部材５２の上面５３の内側端に向かって流れる処理液の液膜の状態も安定している。   The control unit 130 controls the rotation driving unit 69 to arrange the nozzle holding member 50 at the processing position on the end surface 93 side of the substrate 9 along the radial direction of the substrate 9. Accordingly, the rotation drive unit 69 arranges the nozzle 51 and the separate member 52 at respective processing positions (also referred to as “inner positions”) on the side of the substrate 9, more specifically, on the side of the end surface 93. (Step S150 in FIGS. 14 and 15). In the process of moving the nozzle 51 and the separate member 52 to each processing position, the nozzle 51 continues to discharge the processing liquid. For this reason, when the nozzle 51 and the separate member 52 are disposed at the respective processing positions, the discharge state of the liquid flow L1 of the processing liquid discharged to the discharge target area 521 is in a stable state. That is, the state of the liquid film of the processing liquid flowing from the discharge target area 521 toward the inner end of the upper surface 53 of the separate member 52 is also stable.

制御部１３０は、処理位置に配置されたノズル５１に、そのまま、処理液の吐出を続行させることにより、基板９の上面周縁部９１１の処理を行う（図１４、図１５のステップＳ１６０）。   The control unit 130 performs the processing of the upper surface peripheral portion 911 of the substrate 9 by causing the nozzle 51 arranged at the processing position to continue discharging the processing liquid as it is (Step S160 in FIGS. 14 and 15).

制御部１３０は、例えば、定められた時間が経過して基板９の上面周縁部９１１の処理が完了すると、処理部５を制御して、ノズル５１からの処理液の吐出を停止する（図１４、図１５のステップＳ１７０）。制御部１３０は、処理部５にノズル５１からの処理液の吐出を停止させる前に、ノズル５１から処理液を吐出させつつ、回転駆動部６９にノズル５１と別部材５２とをそれぞれの外側位置に配置させた後に、ノズル５１からの処理液の吐出を停止させてもよい。   The control unit 130 controls the processing unit 5 to stop the discharge of the processing liquid from the nozzles 51, for example, when the processing of the upper surface peripheral portion 911 of the substrate 9 is completed after a predetermined time has elapsed (FIG. 14). , Step S170 in FIG. 15). The control unit 130 controls the rotation driving unit 69 to move the nozzle 51 and the separate member 52 to the respective outer positions while causing the processing unit 5 to stop discharging the processing liquid from the nozzle 51 while discharging the processing liquid from the nozzle 51. After that, the discharge of the processing liquid from the nozzle 51 may be stopped.

制御部１３０は、回転機構２３１を制御して、スピンチャック２１の回転を停止させ（図１４、図１５のステップＳ１８０）、図１４のフローチャートの動作を終了させる。   The control unit 130 controls the rotation mechanism 231 to stop the rotation of the spin chuck 21 (Step S180 in FIGS. 14 and 15), and ends the operation of the flowchart in FIG.

＜６．他の実施形態について＞
図１６は、他の実施形態に係る基板処理装置１Ａの構成を説明するための側面模式図である。図１７は、基板処理装置１Ａの構成を説明するための上面模式図である。図１８は、基板処理装置１Ａへの基板９の搬出入時における基板処理装置１Ａの別部材７３の動作を説明するための上面模式図である。 <6. Other Embodiments>
FIG. 16 is a schematic side view for explaining the configuration of a substrate processing apparatus 1A according to another embodiment. FIG. 17 is a schematic top view for explaining the configuration of the substrate processing apparatus 1A. FIG. 18 is a schematic top view for explaining the operation of another member 73 of the substrate processing apparatus 1A when the substrate 9 is carried in and out of the substrate processing apparatus 1A.

基板処理装置１Ａは、基板処理装置１と同様に、回転軸ａ１を中心に回転されている基板９の上面周縁部９１１等に処理液を吐出して上面周縁部９１１等の処理を行う装置である。   Similar to the substrate processing apparatus 1, the substrate processing apparatus 1A is an apparatus that discharges a processing liquid to the upper peripheral edge 911 and the like of the substrate 9 that is rotated about the rotation axis a1 and performs processing on the upper peripheral edge 911 and the like. is there.

基板処理装置１Ａは、基板処理装置１と異なる構成として、基板処理装置１のノズル保持部材５０に代えて、台座２５を備え、別部材５２に代えて、別部材７３を備えている。ノズル５１は、アーム６３の先端の下方に固定されている。   The substrate processing apparatus 1A is different from the substrate processing apparatus 1 in that the substrate processing apparatus 1 includes a pedestal 25 instead of the nozzle holding member 50 and a separate member 73 instead of the separate member 52. The nozzle 51 is fixed below the tip of the arm 63.

台座２５は、円環状の部材であり、回転軸部２２を中央の孔部に挿通して、回転軸部２２に固定されている。台座２５の軸心は、回転軸部２２の軸心と同じく、回転軸ａ１と一致して設けられている。これにより、回転軸部２２は、回転軸ａ１を中心として、基板９と同じ方向に同じ速度で回転される。   The pedestal 25 is an annular member, and is fixed to the rotating shaft 22 by inserting the rotating shaft 22 into a central hole. The axis of the pedestal 25 is provided so as to coincide with the axis of rotation a1, similarly to the axis of the axis of rotation 22. Thereby, the rotating shaft portion 22 is rotated at the same speed in the same direction as the substrate 9 around the rotating shaft a1.

別部材７３は、回転軸ａ１を中心とする基板９の周方向に沿って基板９の周縁（端９４、端面９３）を取り囲む板状の環状部材である。   The separate member 73 is a plate-shaped annular member that surrounds the periphery (the end 94 and the end surface 93) of the substrate 9 along the circumferential direction of the substrate 9 around the rotation axis a1.

別部材７３は、複数（図示の例では３つ）の円弧状部材７３ａ〜７３ｃを備えている。２つの円弧状部材７３ａ、７３ｂのそれぞれの基板９の周方向における一端同士は、互いに対向している。円弧状部材７３ａ、７３ｂは、それぞれの他端を中心に水平面内でそれぞれ回動可能に設けられている。円弧状部材７３ａ、７３ｂは、基板９の周縁の約４分の１の長さに沿って延設されており、円弧状部材７３ｃは、基板９の周縁の約半分の長さに沿って延設されている。別部材７３の上面は、略水平面である。別部材７３（円弧状部材７３ａ〜７３ｃ）の縦断面の形状として、例えば、別部材５２、５２Ａ〜５２Ｄの断面形状などが採用される。   The separate member 73 includes a plurality (three in the illustrated example) of arc-shaped members 73a to 73c. One ends of the two arc-shaped members 73a and 73b in the circumferential direction of the substrate 9 are opposed to each other. The arc-shaped members 73a and 73b are provided so as to be rotatable about a respective other end in a horizontal plane. The arc-shaped members 73a and 73b extend along the length of about one-fourth of the periphery of the substrate 9, and the arc-shaped member 73c extends along about half the length of the periphery of the substrate 9. It is established. The upper surface of the separate member 73 is substantially horizontal. As the shape of the longitudinal section of the separate member 73 (the arc-shaped members 73a to 73c), for example, the sectional shape of the separate members 52, 52A to 52D and the like are adopted.

円弧状部材７３ｃは、台座２５の上面から上方に突設された２つの突片７５によって、台座２５の上面と隙間を隔てて台座２５に対して固定されている。円弧状部材７３ａ、７３ｂは、それぞれの他端に取り付けられた突片７４を介して、台座２５に固定されている。より詳細には、突片７４は、ステッピングモータなどにより構成される回転駆動部（「回動機構」）７９によってその軸心を中心に回転可能に構成されている。当該軸心は鉛直軸である。   The arcuate member 73c is fixed to the pedestal 25 with two protrusions 75 projecting upward from the upper surface of the pedestal 25 with a gap from the upper surface of the pedestal 25. The arc-shaped members 73a and 73b are fixed to the pedestal 25 via protruding pieces 74 attached to the other ends thereof. More specifically, the protruding piece 74 is configured to be rotatable around its axis by a rotation driving unit (“rotation mechanism”) 79 including a stepping motor or the like. The axis is a vertical axis.

従って、基板処理装置１Ａは、回転機構２３１に台座２５を回転させることによって、台座２５等を介して、別部材７３を基板９と同じ回転速度で回転させる。回転駆動部２３、回転軸部２２、台座２５、回転駆動部７９、突片７４、突片７５は、別部材７３を、回転軸ａ１を中心に回転させる回転機構２５１である。   Therefore, the substrate processing apparatus 1A causes the rotation mechanism 231 to rotate the pedestal 25, thereby rotating the separate member 73 at the same rotation speed as the substrate 9 via the pedestal 25 or the like. The rotation drive unit 23, the rotation shaft unit 22, the pedestal 25, the rotation drive unit 79, the projection 74, and the projection 75 are a rotation mechanism 251 that rotates the separate member 73 about the rotation axis a1.

円弧状部材７３ａ、７３ｂは、図１７に示される状態から、図１８に示されるように、各突片７４、すなわち、それぞれの他端を回転中心としてそれぞれの一端が互いに基板９の径よりも離れるように回転駆動部７９によって突片７４を介して回動される。円弧状部材７３ａ、７３ｂの一端が互いに離された状態で、基板処理装置１に基板が搬出入される。   As shown in FIG. 18, each of the arc-shaped members 73a and 73b is such that, as shown in FIG. It is rotated by the rotation drive unit 79 via the protruding piece 74 so as to be separated. The substrate is carried in and out of the substrate processing apparatus 1 in a state where one ends of the arc-shaped members 73a and 73b are separated from each other.

基板処理装置１Ａは、上記の相違点を除いて、基板処理装置１と同様の構成を備えており、基板９の上面周縁部９１１に対する処理を行う。   The substrate processing apparatus 1A has a configuration similar to that of the substrate processing apparatus 1 except for the above-described differences, and performs processing on the upper surface peripheral portion 911 of the substrate 9.

すなわち、別部材７３は、スピンチャック２１に保持されている基板９の端面９３と隙間を隔てて基板９の径方向に沿って基板９の外側に配置される。ノズル５１は、少なくとも一部が別部材７３の上面に含まれる吐出目標領域７３１に当たるように吐出目標領域７３１の上方から処理液を吐出する。別部材７３と基板９の端面９３との隙間は、吐出目標領域７３１に当たった処理液が、別部材７３の上面を流れて当該上面の回転軸ａ１側の内側端から排出され、基板９の上面周縁部９１１に上方から当たるように設定されている。基板処理装置１Ａは、ノズル５１と別部材７３とを別々に移動させる。ノズル５１は、昇降駆動部６８、回転駆動部６９によって基板９の径方向および鉛直方向に移動されるが、別部材７３は、その一部（円弧状部材７３ａ、７３ｂ）を除いて、台座２５に対して固定されており、台座２５とともに、すなわち、基板９とともに回転する。吐出目標領域７３１の全てが別部材７３の上面に含まれもよいし、吐出目標領域７３１の一部が、別部材７３の上面の内側端から回転軸ａ１側にはみ出していてもよい。   That is, the separate member 73 is disposed outside the substrate 9 along the radial direction of the substrate 9 with a gap from the end surface 93 of the substrate 9 held by the spin chuck 21. The nozzle 51 discharges the processing liquid from above the discharge target area 731 so that at least a part thereof hits the discharge target area 731 included in the upper surface of the separate member 73. In the gap between the separate member 73 and the end surface 93 of the substrate 9, the processing liquid hitting the discharge target area 731 flows on the upper surface of the separate member 73 and is discharged from the inner end of the upper surface on the side of the rotation axis a <b> 1. The upper surface peripheral portion 911 is set so as to hit from above. The substrate processing apparatus 1A moves the nozzle 51 and the separate member 73 separately. The nozzle 51 is moved in the radial direction and the vertical direction of the substrate 9 by the elevating drive unit 68 and the rotation drive unit 69, but the separate member 73 has a pedestal 25 except for a part thereof (arc-shaped members 73 a and 73 b). And rotates with the pedestal 25, that is, with the substrate 9. The entire discharge target area 731 may be included in the upper surface of the separate member 73, or a part of the discharge target area 731 may protrude from the inner end of the upper surface of the separate member 73 toward the rotation axis a1.

なお、円弧状部材７３ａ〜７３ｃを、それぞれの処理位置と、処理位置に対して基板９の径方向の外側の外側位置との間で駆動する駆動機構を回転駆動部７９、および各突片７５の下方に備えてもよい。この場合、基板処理装置１Ａにおいても、別部材７３（円弧状部材７３ａ〜７３ｃ）を外側位置に配置して、ノズル５１から処理液を別部材７３に吐出させ、吐出状態の安定を待って、別部材７３（円弧状部材７３ａ〜７３ｃ）を処理位置に配置させることができる。   In addition, a driving mechanism that drives the arc-shaped members 73a to 73c between the respective processing positions and the outer position in the radial direction of the substrate 9 with respect to the processing position is a rotation driving unit 79 and each protruding piece 75. May be provided below. In this case, also in the substrate processing apparatus 1A, another member 73 (arc-shaped members 73a to 73c) is arranged at the outer position, the processing liquid is discharged from the nozzle 51 to the another member 73, and after the discharge state is stabilized, Another member 73 (arc-shaped members 73a to 73c) can be arranged at the processing position.

以上のように構成された本実施形態に係る基板処理装置、および基板処理方法のいずれによっても、別部材５２（７３）の上面に少なくとも一部が含まれる吐出目標領域５２１（７３１）に当たるようにノズル５１から処理液が吐出される。別部材５２（７３）は、基板９の端面９３と隙間を隔てて基板９の径方向に沿って基板９の外側に配置されており、当該隙間は、吐出目標領域５２１（７３１）に当たった処理液が、別部材５２（７３）の上面を流れて当該上面の回転軸ａ１側の内側端から排出され、基板９の上面周縁部９１１に上方から当たるように設定されている。従って、処理液による基板９の上面周縁部９１１の処理幅を細くできるとともに、処理幅の均一性を向上できる。   In any of the substrate processing apparatus and the substrate processing method according to the present embodiment configured as described above, the upper surface of the separate member 52 (73) may hit the discharge target area 521 (731) at least partially included. The processing liquid is discharged from the nozzle 51. The separate member 52 (73) is arranged outside the substrate 9 along the radial direction of the substrate 9 with a gap from the end face 93 of the substrate 9, and the gap hits the discharge target area 521 (731). The processing liquid is set so as to flow on the upper surface of the separate member 52 (73), to be discharged from the inner end of the upper surface on the side of the rotation axis a <b> 1, and to hit the upper surface peripheral portion 911 of the substrate 9 from above. Therefore, the processing width of the upper surface peripheral portion 911 of the substrate 9 by the processing liquid can be reduced, and the uniformity of the processing width can be improved.

また、以上のように構成された本実施形態に係る基板処理装置によれば、吐出目標領域５２１（７３１）の全てが、別部材５２（７３）の上面に含まれている。従って、基板９の上面周縁部９１１に当たる処理液は、全て、吐出目標領域５２１（７３１）から別部材５２（７３）の上面を流れて当該上面の回転軸ａ１側の内側端から排出される処理液である。従って、処理液が基板９の上面周縁部９１１に当たる位置と、別部材５２（７３）の内側端との基板９の径方向に沿った距離を短くできる。これにより、処理液による基板９の上面周縁部９１１の処理幅をさらに細くできる。   Further, according to the substrate processing apparatus of the present embodiment configured as described above, the entire discharge target area 521 (731) is included on the upper surface of the separate member 52 (73). Therefore, all the processing liquid that hits the upper surface peripheral portion 911 of the substrate 9 flows from the discharge target area 521 (731) to the upper surface of the separate member 52 (73), and is discharged from the inner end of the upper surface on the rotation axis a1 side. Liquid. Therefore, the distance along the radial direction of the substrate 9 between the position where the processing liquid contacts the upper surface peripheral portion 911 of the substrate 9 and the inner end of the separate member 52 (73) can be reduced. Thereby, the processing width of the upper peripheral portion 911 of the substrate 9 by the processing liquid can be further reduced.

また、以上のように構成された本実施形態に係る基板処理装置によれば、ノズル保持部材５０がノズル５１と別部材５２とを一体的に保持するので、一定の吐出目標領域５２１に当たるように処理液が吐出される。これにより、内側端から排出される処理液の排出態様を安定させることができる。従って、基板９の上面周縁部９１１の処理幅を安定させることができる。   Further, according to the substrate processing apparatus according to the present embodiment configured as described above, since the nozzle holding member 50 integrally holds the nozzle 51 and the separate member 52, the nozzle holding member 50 hits the fixed discharge target area 521. The processing liquid is discharged. This makes it possible to stabilize the discharge of the processing liquid discharged from the inner end. Therefore, the processing width of the upper peripheral portion 911 of the substrate 9 can be stabilized.

また、以上のように構成された本実施形態に係る基板処理装置によれば、別部材７３は、回転軸ａ１を中心とする基板９の周方向に沿って基板９の周縁を取り囲む環状部材であり、別部材７３は基板９と同じ回転速度で回転される。従って、別部材７３を基板９とともに回転させる場合においても、基板９の上面周縁部９１１の処理幅の均一性を向上できる。   Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the separate member 73 is an annular member that surrounds the periphery of the substrate 9 along the circumferential direction of the substrate 9 about the rotation axis a1. The separate member 73 is rotated at the same rotation speed as the substrate 9. Therefore, even when the separate member 73 is rotated together with the substrate 9, the uniformity of the processing width of the upper peripheral portion 911 of the substrate 9 can be improved.

また、以上のように構成された本実施形態に係る基板処理装置によれば、２つの円弧状部材７３ａ、７３ｂは、一端同士が対向して基板９の周方向に沿って隣り合って設けられており、それぞれの他端を回転中心としてそれぞれの一端が互いに基板９の径よりも離れるように回動させられ得る。従って、２つの円弧状部材７３ａ、７３ｂの当該回動によって基板処理装置への基板９の搬出入が可能となる。   Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the two arc-shaped members 73 a and 73 b are provided adjacent to each other along the circumferential direction of the substrate 9 with one ends facing each other. Each of the other ends can be rotated about the other end thereof as a center of rotation so that one end is farther from the substrate 9 than the other. Therefore, the substrate 9 can be carried in and out of the substrate processing apparatus by the rotation of the two arc-shaped members 73a and 73b.

また、以上のように構成された本実施形態に係る基板処理装置によれば、処理位置よりも基板９の径方向の外側の外側位置に配置されている別部材５２（７３）の吐出目標領域５２１（７３１）に向けてノズル５１が処理液の吐出を開始し、ノズル５１が処理液を吐出している間に、別部材５２（７３）が外側位置から処理位置に移動される。従って、吐出開始時における処理液の液流Ｌ１の乱れの影響によって、基板９の上面周縁部９１１の処理幅が不均一になることを抑制できる。   Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the discharge target area of the separate member 52 (73) disposed outside the processing position in the radial direction of the substrate 9. The nozzle 51 starts discharging the processing liquid toward 521 (731), and another member 52 (73) is moved from the outer position to the processing position while the nozzle 51 is discharging the processing liquid. Therefore, it is possible to prevent the processing width of the upper peripheral portion 911 of the substrate 9 from becoming uneven due to the influence of the disturbance of the processing liquid flow L1 at the start of the ejection.

また、以上のように構成された本実施形態に係る基板処理装置によれば、別部材５２（７３）の上面の回転軸ａ１側の内側端が、基板９の周縁よりも基板９の径方向に沿って回転軸ａ１側に位置する。従って、基板９の上面周縁部９１１の処理幅を広くできる。   Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the inner end of the upper surface of the separate member 52 (73) on the rotation axis a1 side is closer to the radial direction of the substrate 9 than the peripheral edge of the substrate 9 is. Along the rotation axis a1. Therefore, the processing width of the upper peripheral portion 911 of the substrate 9 can be increased.

また、以上のように構成された本実施形態に係る基板処理装置によれば、別部材５２の内側面５５は、その下端から上端に向かって回転軸ａ１に近づくように回転軸ａ１に対して傾斜している。従って、別部材５２を昇降できる場合、処理位置の上方からの別部材５２の降下によって別部材５２を処理位置に配置することができる。   Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the inner side surface 55 of the separate member 52 moves toward the rotation axis a1 from the lower end toward the upper end with respect to the rotation axis a1. It is inclined. Therefore, when the separate member 52 can be moved up and down, the separate member 52 can be arranged at the processing position by lowering the separate member 52 from above the processing position.

また、以上のように構成された本実施形態に係る基板処理装置によれば、別部材５２Ａの内側面５５Ａは、その下端から上端に向かって回転軸ａ１に近づくとともに、回転軸ａ１に対して斜め上方に張り出して湾曲している。従って、基板９の端面９３と別部材５２Ａとの基板９の径方向の隙間を、さらに均一化できる。これにより、基板９の端面９３の処理効率を向上できる。   In addition, according to the substrate processing apparatus according to the present embodiment configured as described above, the inner side surface 55A of the separate member 52A approaches the rotation axis a1 from the lower end to the upper end, and is separated from the rotation axis a1. It protrudes obliquely upward and curves. Therefore, the radial gap of the substrate 9 between the end surface 93 of the substrate 9 and the separate member 52A can be made more uniform. Thereby, the processing efficiency of the end surface 93 of the substrate 9 can be improved.

また、以上のように構成された本実施形態に係る基板処理装置によれば、別部材５２Ｂ（５２Ｃ）は、基板９の端面９３に対向する内側面５５Ｂ（５５Ｃ）を含み、回転軸ａ１を含む平面における内側面５５Ｂ（５５Ｃ）の断面形状は、基板９の端面９３に沿って湾曲している。従って、基板９の端面９３と別部材５２Ｂ（５２Ｃ）との基板９の径方向の隙間を、さらに均一化できる。これにより、基板９の端面９３の処理効率を向上できる。   Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the separate member 52B (52C) includes the inner side surface 55B (55C) facing the end surface 93 of the substrate 9, and includes the rotation axis a1. The cross-sectional shape of the inner side surface 55 </ b> B (55 </ b> C) in the included plane is curved along the end surface 93 of the substrate 9. Therefore, the radial gap of the substrate 9 between the end surface 93 of the substrate 9 and the separate member 52B (52C) can be further uniformed. Thereby, the processing efficiency of the end surface 93 of the substrate 9 can be improved.

本発明は詳細に示され記述されたが、上記の記述は全ての態様において例示であって限定的ではない。したがって、本発明は、その発明の範囲内において、実施の形態を適宜、変形、省略することが可能である。   Although the present invention has been shown and described in detail, the above description is illustrative in all aspects and is not restrictive. Therefore, the present invention can appropriately modify and omit the embodiments within the scope of the invention.

１，１Ａ 基板処理装置
２１ スピンチャック（保持部材）
２３ 回転駆動部
２３１ 回転機構
２５１ 回転機構
５０ ノズル保持部材
５１ ノズル
５２，５２Ａ〜５２Ｅ 別部材
６８ 昇降駆動部
６９ 回転駆動部
７３ 別部材
７３ａ〜７３ｃ 円弧状部材
７９ 回転駆動部（回動機構） 1,1A substrate processing apparatus 21 spin chuck (holding member)
Reference Signs List 23 rotation drive unit 231 rotation mechanism 251 rotation mechanism 50 nozzle holding member 51 nozzle 52, 52A to 52E separate member 68 elevating drive unit 69 rotation drive unit 73 separate member 73a to 73c arc-shaped member 79 rotation drive unit (rotation mechanism)

Claims (11)

基板を下方から略水平に保持し、所定の回転軸を中心に回転可能に設けられた保持部材と、
前記保持部材を、前記回転軸を中心に回転させる回転機構と、
前記保持部材に保持されている前記基板の端面と隙間を隔てて前記基板の径方向に沿って前記基板の外側に配置される別部材と、
少なくとも一部が前記別部材の上面に含まれる吐出目標領域に当たるように前記吐出目標領域の上方から処理液を吐出するノズルと、
を備え、
前記別部材と前記基板の端面との前記隙間は、前記吐出目標領域に当たった前記処理液が、前記別部材の上面を流れて当該上面の前記回転軸側の内側端から排出され、前記基板の上面周縁部に上方から当たるように設定されている、基板処理装置。 A holding member that holds the substrate substantially horizontally from below, and that is rotatably provided around a predetermined rotation axis;
A rotation mechanism that rotates the holding member around the rotation axis,
Another member arranged outside the substrate along the radial direction of the substrate with a gap between the end face of the substrate held by the holding member and a gap,
A nozzle that discharges the processing liquid from above the discharge target area so that at least a part thereof hits a discharge target area included in the upper surface of the separate member,
With
In the gap between the separate member and the end face of the substrate, the processing liquid hitting the discharge target area flows over the upper surface of the separate member and is discharged from the inner end of the upper surface on the rotation axis side, and the substrate A substrate processing apparatus, which is set so as to hit a peripheral edge of an upper surface from above. 請求項１に記載の基板処理装置であって、
前記吐出目標領域の全てが、前記別部材の上面に含まれている、基板処理装置。 The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the entire discharge target area is included on an upper surface of the separate member. 請求項１または請求項２に記載の基板処理装置であって、
前記ノズルと前記別部材とを一体的に保持するノズル保持部材をさらに備える、基板処理装置。 The substrate processing apparatus according to claim 1 or 2,
A substrate processing apparatus further comprising a nozzle holding member that integrally holds the nozzle and the separate member. 請求項１または請求項２に記載の基板処理装置であって、
前記別部材は、前記回転軸を中心とする前記基板の周方向に沿って前記基板の周縁を取り囲む環状部材であり、
前記基板処理装置は、
前記別部材を前記基板と同じ回転速度で回転させる前記環状部材用の回転機構をさらに備える、基板処理装置。 The substrate processing apparatus according to claim 1 or 2,
The separate member is an annular member that surrounds the periphery of the substrate along a circumferential direction of the substrate around the rotation axis,
The substrate processing apparatus includes:
The substrate processing apparatus further includes a rotation mechanism for the annular member that rotates the separate member at the same rotation speed as the substrate. 請求項４に記載の基板処理装置であって、
前記環状部材は、複数の円弧状部材を含んでおり、
前記複数の円弧状部材は、前記基板の周方向に沿って隣り合う２つの円弧状部材を含み、
前記２つの円弧状部材のそれぞれの前記基板の周方向における一端同士が互いに対向しており、前記２つの円弧状部材は、それぞれの他端を中心に水平面内でそれぞれ回動可能に設けられており、
前記基板処理装置は、前記２つの円弧状部材のそれぞれの他端を回転中心としてそれぞれの一端が互いに前記基板の径よりも離れるように前記２つの円弧状部材をそれぞれ回動させることができる回動機構をさらに備える、基板処理装置。 The substrate processing apparatus according to claim 4, wherein
The annular member includes a plurality of arc-shaped members,
The plurality of arc-shaped members include two arc-shaped members adjacent to each other along a circumferential direction of the substrate,
One end of each of the two arc-shaped members in the circumferential direction of each of the substrates is opposed to each other, and the two arc-shaped members are provided so as to be rotatable in a horizontal plane around the other ends thereof. Yes,
The substrate processing apparatus may be configured to rotate each of the two arc-shaped members such that one end of each of the two arc-shaped members is separated from the diameter of the substrate by using the other end of each of the two arc-shaped members as a rotation center. A substrate processing apparatus further comprising a moving mechanism. 請求項１から請求項５の何れか１つの請求項に記載の基板処理装置であって、
前記別部材を前記基板の径方向に移動可能な径方向駆動部と、
前記径方向駆動部と、前記ノズルとを制御する制御部と、
を備え、
前記吐出目標領域に当たった前記処理液が、前記別部材の上面を流れて当該上面の前記回転軸側の内側端から排出され、前記基板の上面周縁部に上方から当たるときの前記別部材の位置によって前記別部材の処理位置を定義したとき、
前記制御部は、
前記径方向駆動部に前記別部材を前記処理位置よりも前記基板の径方向の外側の外側位置に配置させている間に、前記ノズルに前記吐出目標領域に向けて前記処理液の吐出を開始させるともに、前記ノズルに前記処理液の吐出をさせつつ、前記径方向駆動部に前記別部材を前記外側位置から前記処理位置に移動させる、基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 5, wherein
A radial driving unit capable of moving the separate member in a radial direction of the substrate,
The radial drive unit, a control unit that controls the nozzle,
With
The processing liquid hitting the discharge target area flows on the upper surface of the separate member, is discharged from the inner end of the upper surface on the side of the rotation shaft, and contacts the peripheral edge of the upper surface of the substrate from above. When the processing position of the separate member is defined by the position,
The control unit includes:
The nozzle starts discharging the processing liquid toward the discharge target area while the separate member is disposed in the radial driving unit at a position outside the processing position in the radial direction of the substrate. A substrate processing apparatus for causing the radial driving unit to move the separate member from the outer position to the processing position while causing the nozzle to discharge the processing liquid. 請求項１から請求項６の何れか１つの請求項に記載の基板処理装置であって、
前記別部材の上面の前記回転軸側の内側端が、前記基板の周縁よりも前記基板の径方向に沿って前記回転軸側に位置する、基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 6, wherein
A substrate processing apparatus, wherein an inner end of the upper surface of the separate member on the rotation axis side is located closer to the rotation axis than a peripheral edge of the substrate along a radial direction of the substrate. 請求項１から請求項７の何れか１つの請求項に記載の基板処理装置であって、
前記別部材は、前記基板の前記端面に対向する内側面を含み、前記内側面がその下端から上端に向かって前記回転軸に近づくように前記回転軸に対して傾斜している、基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 7, wherein
The substrate processing apparatus, wherein the separate member includes an inner surface facing the end surface of the substrate, and the inner surface is inclined with respect to the rotation axis so as to approach the rotation axis from a lower end toward an upper end. . 請求項１から請求項７の何れか１つの請求項に記載の基板処理装置であって、
前記別部材は、前記基板の前記端面に対向する内側面を含み、前記内側面は、その下端から上端に向かって前記回転軸に近づくとともに、前記回転軸に対して斜め上方に張り出して湾曲している、基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 7, wherein
The separate member includes an inner surface opposed to the end surface of the substrate, and the inner surface approaches the rotation axis from a lower end thereof toward an upper end, and extends and curves obliquely upward with respect to the rotation axis. A substrate processing apparatus. 請求項１から請求項７の何れか１つの請求項に記載の基板処理装置であって、
前記別部材は、前記基板の前記端面に対向する内側面を含み、前記回転軸を含む平面における前記内側面の断面形状は、前記基板の端面に沿って湾曲している、基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 7, wherein
The substrate processing apparatus, wherein the separate member includes an inner surface facing the end surface of the substrate, and a cross-sectional shape of the inner surface in a plane including the rotation axis is curved along the end surface of the substrate. 基板処理装置における基板処理方法であって、
当該基板処理装置は、
基板を下方から略水平に保持し、所定の回転軸を中心に回転可能に設けられた保持部材と、
前記保持部材を、前記回転軸を中心に回転させる回転機構と、
前記基板から離れて配置される別部材と、
処理液を吐出可能なノズルと、
を備え、
前記基板処理方法は、
前記別部材を前記基板の端面と隙間を隔てて前記基板の径方向に沿って前記基板の外側に配置するステップと、
少なくとも一部が前記別部材の上面に含まれる吐出目標領域に当たるように、前記ノズルに前記吐出目標領域の上方から処理液を吐出させるステップと、
を備え、
前記別部材と前記基板の端面との前記隙間は、前記吐出目標領域に当たった前記処理液が、前記別部材の上面を流れて当該上面の前記回転軸側の内側端から排出され、前記基板の上面周縁部に上方から当たるように設定されている、基板処理方法。 A substrate processing method in a substrate processing apparatus,
The substrate processing apparatus,
A holding member that holds the substrate substantially horizontally from below, and that is rotatably provided around a predetermined rotation axis;
A rotation mechanism that rotates the holding member around the rotation axis,
A separate member arranged away from the substrate,
A nozzle capable of discharging the processing liquid,
With
The substrate processing method,
Arranging the separate member outside the substrate along the radial direction of the substrate with a gap between the end surface of the substrate and a gap;
Causing the nozzle to discharge the processing liquid from above the discharge target area so that at least a part of the nozzle hits the discharge target area included in the upper surface of the separate member;
With
In the gap between the separate member and the end face of the substrate, the processing liquid hitting the discharge target area flows over the upper surface of the separate member and is discharged from the inner end of the upper surface on the rotation axis side, and the substrate The substrate processing method, wherein the substrate is set so as to come into contact with the upper surface peripheral portion from above.
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