JP6640759B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JP6640759B2 JP6640759B2 JP2017002381A JP2017002381A JP6640759B2 JP 6640759 B2 JP6640759 B2 JP 6640759B2 JP 2017002381 A JP2017002381 A JP 2017002381A JP 2017002381 A JP2017002381 A JP 2017002381A JP 6640759 B2 JP6640759 B2 JP 6640759B2
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- 238000012545 processing Methods 0.000 title claims description 104
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 74
- 238000010438 heat treatment Methods 0.000 claims description 37
- 239000007789 gas Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 60
- 239000000758 substrate Substances 0.000 description 49
- 239000011521 glass Substances 0.000 description 45
- 238000004544 sputter deposition Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000000630 rising effect Effects 0.000 description 12
- 238000012546 transfer Methods 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
Claims (3)
- 第1の真空ポンプと加熱手段とを有し、第1の真空ポンプにより真空排気した状態で加熱手段により処理対象物を加熱し、当該処理対象物に付着した水分子を脱離させる真空加熱室と、
第2の真空ポンプを有し、真空加熱室から加熱済みの処理対象物が真空雰囲気中で搬送され、第2の真空ポンプにより真空排気した状態で処理対象物をストックするストック室と、
第3の真空ポンプを有し、ストック室から処理対象物が真空雰囲気中で搬送され、第3の真空ポンプにより真空排気した状態で処理対象物に対して所定の処理を施す真空処理室と、を備え、
前記真空加熱室内の水分圧を測定する第1の測定手段と、前記ストック室内の水分圧を測定する第2の測定手段とを有し、第1の測定手段で測定した第1測定値が所定値に達したとき、及び、第2の測定手段で測定した第2測定値が第1測定値より低い所定値に達すると、処理対象物の搬送を許容する判定手段を更に備えることを特徴とする真空処理装置。 - 前記ストック室内に、水分子を吸着する吸着手段が設けられることを特徴とする請求項1記載の真空処理装置。
- 前記真空処理室に、インジウムとガリウムと亜鉛とを含む焼結体のターゲットと、ターゲットに電力投入する電源と、放電用のガスと酸素ガスとを夫々導入するガス導入手段と、真空処理室内の水分圧を測定する第3の測定手段とを設け、真空処理室内の水分圧が1×10−5Pa〜1×10−3Paの範囲内の所定圧力に真空排気されると、放電用のガスと酸素ガスとの導入とターゲットへの電力投入とを行う制御手段を備えることを特徴とする請求項1または請求項2記載の真空処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017002381A JP6640759B2 (ja) | 2017-01-11 | 2017-01-11 | 真空処理装置 |
TW106143663A TWI729249B (zh) | 2017-01-11 | 2017-12-13 | 成膜方法及真空處理裝置 |
CN201810009976.3A CN108300968B (zh) | 2017-01-11 | 2018-01-05 | 成膜方法及真空处理装置 |
KR1020180003692A KR102428287B1 (ko) | 2017-01-11 | 2018-01-11 | 성막 방법 및 진공 처리 장치 |
Applications Claiming Priority (1)
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JP2017002381A JP6640759B2 (ja) | 2017-01-11 | 2017-01-11 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2018111852A JP2018111852A (ja) | 2018-07-19 |
JP6640759B2 true JP6640759B2 (ja) | 2020-02-05 |
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JP2017002381A Active JP6640759B2 (ja) | 2017-01-11 | 2017-01-11 | 真空処理装置 |
Country Status (4)
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JP (1) | JP6640759B2 (ja) |
KR (1) | KR102428287B1 (ja) |
CN (1) | CN108300968B (ja) |
TW (1) | TWI729249B (ja) |
Families Citing this family (3)
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KR20210071334A (ko) * | 2019-12-06 | 2021-06-16 | 주식회사 아바코 | 스퍼터링 시스템 |
CN111081826B (zh) * | 2019-12-31 | 2022-02-08 | 苏州联诺太阳能科技有限公司 | 一种异质结电池制备方法 |
CN112708867A (zh) * | 2020-12-31 | 2021-04-27 | 广东谛思纳为新材料科技有限公司 | 一种往复镀膜设备及镀膜方法 |
Family Cites Families (20)
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JP4002713B2 (ja) * | 2000-05-25 | 2007-11-07 | 株式会社リコー | 高分子基板用薄膜形成装置および高分子基板用薄膜形成方法 |
JP2002033280A (ja) * | 2000-07-13 | 2002-01-31 | Ulvac Japan Ltd | 真空成膜装置、仕込・取出室及び仕込・取出室内部の排気方法 |
AU2003242422A1 (en) * | 2002-05-23 | 2003-12-12 | Anelva Corporation | Substrate processing device and substrate processing method |
US20040040504A1 (en) * | 2002-08-01 | 2004-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
JP4833512B2 (ja) * | 2003-06-24 | 2011-12-07 | 東京エレクトロン株式会社 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
JP5187736B2 (ja) * | 2008-02-20 | 2013-04-24 | 独立行政法人産業技術総合研究所 | 薄膜堆積方法 |
US9666719B2 (en) * | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101342343B1 (ko) * | 2009-09-24 | 2013-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자의 제작 방법 |
CN101691651B (zh) * | 2009-10-10 | 2011-07-27 | 西安交通大学 | 一种InGaZnO透明导电薄膜的L-MBE制备方法 |
CN103151266B (zh) * | 2009-11-20 | 2016-08-03 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
JP5357808B2 (ja) * | 2010-03-03 | 2013-12-04 | 富士フイルム株式会社 | Igzo系アモルファス酸化物絶縁膜の製造方法及びそれを用いた電界効果型トランジスタの製造方法 |
TWI521612B (zh) * | 2011-03-11 | 2016-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
CN105931967B (zh) * | 2011-04-27 | 2019-05-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
JP5920967B2 (ja) | 2011-09-20 | 2016-05-24 | 株式会社アルバック | Igzo膜の形成方法及び薄膜トランジスタの製造方法 |
CN104380473B (zh) * | 2012-05-31 | 2017-10-13 | 株式会社半导体能源研究所 | 半导体装置 |
JP2014034699A (ja) * | 2012-08-08 | 2014-02-24 | Sumitomo Heavy Ind Ltd | 膜製造方法 |
JP2014192264A (ja) * | 2013-03-26 | 2014-10-06 | Nippon Hoso Kyokai <Nhk> | 薄膜トランジスタの製造方法 |
JP2015101768A (ja) * | 2013-11-26 | 2015-06-04 | 株式会社島津製作所 | 成膜装置 |
US20150279674A1 (en) * | 2014-04-01 | 2015-10-01 | Intermolecular, Inc. | CAAC IGZO Deposited at Room Temperature |
WO2017212363A1 (en) * | 2016-06-06 | 2017-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus |
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- 2017-01-11 JP JP2017002381A patent/JP6640759B2/ja active Active
- 2017-12-13 TW TW106143663A patent/TWI729249B/zh active
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2018
- 2018-01-05 CN CN201810009976.3A patent/CN108300968B/zh active Active
- 2018-01-11 KR KR1020180003692A patent/KR102428287B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR102428287B1 (ko) | 2022-08-02 |
KR20180082977A (ko) | 2018-07-19 |
TWI729249B (zh) | 2021-06-01 |
JP2018111852A (ja) | 2018-07-19 |
CN108300968A (zh) | 2018-07-20 |
CN108300968B (zh) | 2022-02-01 |
TW201842214A (zh) | 2018-12-01 |
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