JP6632467B2 - レーザー加工装置及びレーザー加工方法 - Google Patents
レーザー加工装置及びレーザー加工方法 Download PDFInfo
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- JP6632467B2 JP6632467B2 JP2016099747A JP2016099747A JP6632467B2 JP 6632467 B2 JP6632467 B2 JP 6632467B2 JP 2016099747 A JP2016099747 A JP 2016099747A JP 2016099747 A JP2016099747 A JP 2016099747A JP 6632467 B2 JP6632467 B2 JP 6632467B2
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- 238000003672 processing method Methods 0.000 title claims description 12
- 238000007493 shaping process Methods 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 48
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 238000002679 ablation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0736—Shaping the laser spot into an oval shape, e.g. elliptic shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
波長 :355nm(YAGレーザーの第3高調波)
出力 :6.0W
繰り返し周波数 :20kHz
送り速度 :400mm/秒
加工回数 :3パス
11 半導体ウェーハ
13 分割予定ライン
15 デバイス
17 ウェーハユニット
19 レーザー加工溝
28 チャックテーブル
34 レーザービーム照射ユニット
35 レーザービーム発生ユニット
37 加工ヘッド
74 平凹シリンドリカルレンズ
76 平凸シリンドリカルレンズ
78 楕円スポット整形手段
80 回折光学素子(DOE)
82 集光レンズ
84 マスク
71a〜71d 楕円形状の集光スポット(楕円スポット)
73 エネルギー強度
86,88 直角プリズム
Claims (3)
- 被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物にレーザービームを照射するレーザービーム照射手段と、該チャックテーブルと該レーザービーム照射手段とを加工送り方向に相対的に移動させる加工送り手段と、該レーザービーム照射手段及び該加工送り手段を制御する制御手段と、を備えたレーザー加工装置であって、
該レーザービーム照射手段は、
レーザービームを発生するレーザービーム発生手段と、
該レーザービーム発生手段から発生されたパルスレーザービームのスポット形状を楕円形に整形し、楕円形に整形した該スポットの長軸を加工送り方向に位置付ける楕円スポット整形手段と、
該楕円スポット整形手段で楕円形に整形したスポットを有するパルスレーザービームを該加工送り方向に対して複数のパルスレーザービームに分岐する回折光学素子と、
該回折光学素子によって複数に分岐されたパルスレーザービームの複数の楕円スポットの互いの長軸の一部が重なるように被加工物に集光する集光レンズと、
を備えたことを特徴とするレーザー加工装置。 - 該楕円スポット整形手段はシリンドリカルレンズによって構成される請求項1記載のレーザー加工装置。
- 請求項1又は2記載のレーザー加工装置を用いて互いに直交する複数の分割予定ラインを有する被加工物の該分割予定ラインにレーザー加工溝を形成するレーザー加工方法であって、
該チャックテーブルで被加工物を保持する保持ステップと、
加工送り方向に対してそれぞれの楕円スポットを有する複数のレーザービームに分岐された各レーザービームを、複数の該楕円スポットの互いの長軸の一部が重なるように被加工物の該分割予定ラインに整列して位置付ける位置付けステップと、
該位置付けステップを実施した後、複数に分岐された該レーザービームと該チャックテーブルとを該分割予定ラインに沿って相対的に加工送りする加工送りステップと、
を備えたことを特徴とするレーザー加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016099747A JP6632467B2 (ja) | 2016-05-18 | 2016-05-18 | レーザー加工装置及びレーザー加工方法 |
US15/592,831 US11348793B2 (en) | 2016-05-18 | 2017-05-11 | Laser processing apparatus and laser processing method |
Applications Claiming Priority (1)
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JP2016099747A JP6632467B2 (ja) | 2016-05-18 | 2016-05-18 | レーザー加工装置及びレーザー加工方法 |
Publications (2)
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JP2017208445A JP2017208445A (ja) | 2017-11-24 |
JP6632467B2 true JP6632467B2 (ja) | 2020-01-22 |
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Country Status (2)
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US (1) | US11348793B2 (ja) |
JP (1) | JP6632467B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7184455B2 (ja) * | 2018-06-27 | 2022-12-06 | 株式会社ディスコ | ウェーハの加工方法 |
JP7206829B2 (ja) * | 2018-11-15 | 2023-01-18 | 日本電気硝子株式会社 | 板状部材の製造方法及び積層体 |
JP7390600B2 (ja) * | 2019-02-28 | 2023-12-04 | パナソニックIpマネジメント株式会社 | 光共振器およびレーザ加工装置 |
KR20210138486A (ko) * | 2020-05-12 | 2021-11-19 | 가부시기가이샤 디스코 | 레이저 가공 방법 |
JP2022161135A (ja) * | 2021-04-08 | 2022-10-21 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
WO2023084681A1 (ja) * | 2021-11-11 | 2023-05-19 | ギガフォトン株式会社 | レーザ加工システム、レーザ加工方法、及び電子デバイスの製造方法 |
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US5632083A (en) * | 1993-08-05 | 1997-05-27 | Hitachi Construction Machinery Co., Ltd. | Lead frame fabricating method and lead frame fabricating apparatus |
JP4440036B2 (ja) * | 2004-08-11 | 2010-03-24 | 株式会社ディスコ | レーザー加工方法 |
US8395084B2 (en) * | 2005-05-02 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
US20070062917A1 (en) * | 2005-09-21 | 2007-03-22 | Quantronix Corporation | Laser cutting and sawing method and apparatus |
JP2007136477A (ja) * | 2005-11-16 | 2007-06-07 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2008254035A (ja) * | 2007-04-05 | 2008-10-23 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2010194584A (ja) * | 2009-02-25 | 2010-09-09 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP5300544B2 (ja) * | 2009-03-17 | 2013-09-25 | 株式会社ディスコ | 光学系及びレーザ加工装置 |
JP2011025279A (ja) * | 2009-07-24 | 2011-02-10 | Disco Abrasive Syst Ltd | 光学系及びレーザ加工装置 |
JP5446631B2 (ja) * | 2009-09-10 | 2014-03-19 | アイシン精機株式会社 | レーザ加工方法及びレーザ加工装置 |
JP5308431B2 (ja) * | 2010-12-06 | 2013-10-09 | 三星ダイヤモンド工業株式会社 | レーザ光によるライン加工方法およびレーザ加工装置 |
KR101298019B1 (ko) * | 2010-12-28 | 2013-08-26 | (주)큐엠씨 | 레이저 가공 장치 |
CN103846547A (zh) * | 2014-02-12 | 2014-06-11 | 苏州兰叶光电科技有限公司 | 多光束整形激光加工*** |
US10675715B2 (en) * | 2015-06-23 | 2020-06-09 | Mitsubishi Electric Corporation | Semiconductor element manufacturing method and manufacturing device |
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2016
- 2016-05-18 JP JP2016099747A patent/JP6632467B2/ja active Active
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US20170338118A1 (en) | 2017-11-23 |
US11348793B2 (en) | 2022-05-31 |
JP2017208445A (ja) | 2017-11-24 |
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