JP6588159B2 - 高電圧電力モジュール - Google Patents
高電圧電力モジュール Download PDFInfo
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- JP6588159B2 JP6588159B2 JP2018520549A JP2018520549A JP6588159B2 JP 6588159 B2 JP6588159 B2 JP 6588159B2 JP 2018520549 A JP2018520549 A JP 2018520549A JP 2018520549 A JP2018520549 A JP 2018520549A JP 6588159 B2 JP6588159 B2 JP 6588159B2
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- 239000004065 semiconductor Substances 0.000 claims description 118
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- 238000006243 chemical reaction Methods 0.000 description 18
- RIBGNAJQTOXRDK-UHFFFAOYSA-N 1,3-dichloro-5-(3-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C=C(Cl)C=C(Cl)C=2)=C1 RIBGNAJQTOXRDK-UHFFFAOYSA-N 0.000 description 13
- 239000004606 Fillers/Extenders Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- -1 region Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/0026—Casings, cabinets or drawers for electric apparatus provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units
- H05K5/0065—Casings, cabinets or drawers for electric apparatus provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units wherein modules are associated together, e.g. electromechanical assemblies, modular structures
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5382—Adaptable interconnections, e.g. for engineering changes
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- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/142—Arrangements of planar printed circuit boards in the same plane, e.g. auxiliary printed circuit insert mounted in a main printed circuit
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/0026—Casings, cabinets or drawers for electric apparatus provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units
- H05K5/0069—Casings, cabinets or drawers for electric apparatus provided with connectors and printed circuit boards [PCB], e.g. automotive electronic control units having connector relating features for connecting the connector pins with the PCB or for mounting the connector body with the housing
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4093—Snap-on arrangements, e.g. clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10363—Jumpers, i.e. non-printed cross-over connections
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Inverter Devices (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Power Conversion In General (AREA)
- Rectifiers (AREA)
Description
[0001]本発明は、海軍研究事務所によって授与された契約番号N00014−15−C−0051の下で政府資金を用いて行われた。米国政府は本発明に一定の権利を有する。
、オン状態抵抗が250mΩから450mΩの間あたりの最大240Aまで伝導する定格
にすることができる。また、一実施形態において、第1の電力半導体ダイと第2の電力半導体ダイとが、炭化ケイ素デバイスである。
[0018]本明細書に組み込まれており、本明細書の一部を形成する添付の図面の図は、本開示のいくつかの態様を示し、説明とともに、本開示の原理を明らかにする働きをする。
Claims (10)
- 第1の電源基板上に第1の電力半導体ダイを備える第1のサブモジュールと、
第2の電源基板上に第2の電力半導体ダイを備える第2のサブモジュールと、
前記第1の電力半導体ダイの少なくとも1つの接点と前記第2の電力半導体ダイの少なくとも1つの接点との間に相互接続印刷回路板を介して結合された取外し可能なジャンパとを備える、電力モジュール。 - 前記電力モジュールが、少なくとも3kVを遮断するように構成される、請求項1に記載の電力モジュール。
- 前記第1のサブモジュールと前記第2のサブモジュールとが、電力モジュールから独立して取外し可能である、請求項1に記載の電力モジュール。
- 前記第1の電力半導体ダイと前記第2の電力半導体ダイとが、金属酸化膜半導体電界効果トランジスタ(MOSFET)である、請求項1に記載の電力モジュール。
- 前記第1の電力半導体ダイの前記少なくとも1つの接点と前記第2の電力半導体ダイの前記少なくとも1つの接点とが、ゲート接点である、請求項4に記載の電力モジュール。
- 前記第1の電力半導体ダイと前記第2の電力半導体ダイとが、炭化ケイ素デバイスである、請求項4に記載の電力モジュール。
- 第3の電力半導体ダイを備える第3のサブモジュールと、
前記第3の電力半導体ダイの少なくとも1つの接点と前記第2の電力半導体ダイの前記少なくとも1つの接点との間に結合された追加の取外し可能なジャンパとをさらに備える、請求項1に記載の電力モジュール。 - 前記取外し可能なジャンパと前記追加の取外し可能なジャンパとを設けたとき、前記電力モジュールが、単相動作モードで動作するように構成され、
前記取外し可能なジャンパと前記追加の取外し可能なジャンパとを設けなかったとき、前記電力モジュールが、三相動作モードで動作するように構成される、請求項7に記載の電力モジュール。 - 前記第1のサブモジュールと、前記第2のサブモジュールと、前記第3のサブモジュールとが、前記電力モジュールから独立して取外し可能である、請求項7に記載の電力モジュール。
- 請求項1に記載の電力モジュールであって、
前記第1の電力半導体ダイの前記少なくとも1つの接点はゲート接点を備え、
前記相互接続印刷回路板は多層印刷回路板を備えており、該多層印刷回路板は、前記第1の電力半導体ダイの前記ゲート接点との接続が第1の導電層上に設けられ、前記第1の電力半導体ダイのソース接点との接続が第2の導電層上に設けられている、電力モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/918,110 | 2015-10-20 | ||
US14/918,110 US9839146B2 (en) | 2015-10-20 | 2015-10-20 | High voltage power module |
PCT/US2016/046780 WO2017078818A2 (en) | 2015-10-20 | 2016-08-12 | High voltage power module |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019162989A Division JP6827085B2 (ja) | 2015-10-20 | 2019-09-06 | 高電圧電力モジュール |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018531576A JP2018531576A (ja) | 2018-10-25 |
JP2018531576A6 JP2018531576A6 (ja) | 2018-12-13 |
JP6588159B2 true JP6588159B2 (ja) | 2019-10-09 |
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JP2018520549A Active JP6588159B2 (ja) | 2015-10-20 | 2016-08-12 | 高電圧電力モジュール |
JP2019162989A Active JP6827085B2 (ja) | 2015-10-20 | 2019-09-06 | 高電圧電力モジュール |
JP2021004823A Active JP7167198B2 (ja) | 2015-10-20 | 2021-01-15 | 高電圧電力モジュール |
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JP2019162989A Active JP6827085B2 (ja) | 2015-10-20 | 2019-09-06 | 高電圧電力モジュール |
JP2021004823A Active JP7167198B2 (ja) | 2015-10-20 | 2021-01-15 | 高電圧電力モジュール |
Country Status (5)
Country | Link |
---|---|
US (4) | US9839146B2 (ja) |
EP (2) | EP4170711A3 (ja) |
JP (3) | JP6588159B2 (ja) |
CN (2) | CN108370220B (ja) |
WO (1) | WO2017078818A2 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9839146B2 (en) | 2015-10-20 | 2017-12-05 | Cree, Inc. | High voltage power module |
US10917992B2 (en) | 2017-01-13 | 2021-02-09 | Cree Fayetteville, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
US11696417B2 (en) | 2017-01-13 | 2023-07-04 | Wolfspeed, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
US10749443B2 (en) * | 2017-01-13 | 2020-08-18 | Cree Fayetteville, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
USD954667S1 (en) | 2017-01-13 | 2022-06-14 | Wolfspeed, Inc. | Power module |
JP2019096508A (ja) * | 2017-11-24 | 2019-06-20 | 川崎重工業株式会社 | 筐体 |
US10418309B1 (en) * | 2018-06-26 | 2019-09-17 | Intel Corporation | Mechanical seal and reservoir for microelectronic packages |
USD903590S1 (en) * | 2018-09-12 | 2020-12-01 | Cree Fayetteville, Inc. | Power module |
USD908632S1 (en) | 2018-09-17 | 2021-01-26 | Cree Fayetteville, Inc. | Power module |
JP6801820B2 (ja) * | 2018-09-27 | 2020-12-16 | 富士電機株式会社 | 電力変換装置 |
FR3089057B1 (fr) * | 2018-11-28 | 2021-09-10 | Inst Supergrid | Système incluant un module électrique de puissance et une gaine contre les arcs électriques |
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