JP6587668B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP6587668B2 JP6587668B2 JP2017215557A JP2017215557A JP6587668B2 JP 6587668 B2 JP6587668 B2 JP 6587668B2 JP 2017215557 A JP2017215557 A JP 2017215557A JP 2017215557 A JP2017215557 A JP 2017215557A JP 6587668 B2 JP6587668 B2 JP 6587668B2
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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Description
本発明の実施形態1を図1から図6によって説明する。本実施形態では、液晶表示装置10に備わる液晶パネル(表示パネル)11について例示する。なお、各図面の一部にはX軸、Y軸及びZ軸を示しており、各軸方向が各図面で示した方向となるように描かれている。また、図4及び図5の上側を表側とし、下側を裏側とする。
本発明の実施形態2を図7によって説明する。この実施形態2では、共通電極120の開口部120Aの形成範囲を変更したものを示す。なお、上記した実施形態1と同様の構造、作用及び効果について重複する説明は省略する。
本発明の実施形態3を図8によって説明する。この実施形態3では、上記した実施形態1から開口重畳遮蔽部234αを変更したものを示す。なお、上記した実施形態1と同様の構造、作用及び効果について重複する説明は省略する。
本発明は上記記述及び図面によって説明した実施形態に限定されるものではなく、例えば次のような実施形態も本発明の技術的範囲に含まれる。
(1)上記した各実施形態では、開口重畳遮蔽部及び開口非重畳遮蔽部がドレイン配線の一部ずつと重畳する配置を示したが、開口重畳遮蔽部及び開口非重畳遮蔽部のいずれかまたは両方がドレイン配線とは非重畳の配置であっても構わない。例えば、ドレイン配線の第3配線部を省略すれば、開口非重畳遮蔽部がドレイン配線とは非重畳の配置となる。
(2)上記した各実施形態では、開口重畳遮蔽部がドレイン配線のうちの電極接続部のみと重畳する配置を示したが、開口重畳遮蔽部がドレイン配線における電極接続部以外の部分と重畳していてもよい。例えば、開口重畳遮蔽部が電極接続部に加えて第2配線部と重畳する配置であっても構わない。
(3)上記した各実施形態では、開口重畳遮蔽部が画素電極のドレイン配線接続部と重畳する配置を示したが、開口重畳遮蔽部が画素電極のドレイン配線接続部とは非重畳の配置であっても構わない。
(4)上記した実施形態1では、開口重畳遮蔽部が開口部のうちの第1開口部及び第2開口部と重畳し、第3開口部とは非重畳とされる配置を示したが、開口重畳遮蔽部が第1開口部及び第2開口部に加えて第3開口部とも重畳する配置であっても構わない。逆に、開口重畳遮蔽部が第1開口部のみと重畳し、第2開口部及び第3開口部とは非重畳とされる配置であっても構わない。
(5)上記した各実施形態では、画素電極のドレイン配線接続部を挟み込む一対の遮蔽部が開口重畳遮蔽部及び開口非重畳遮蔽部とされる場合を示したが、画素電極のドレイン配線接続部を挟み込む一対の遮蔽部がいずれも開口重畳遮蔽部とされる構成や上記一対の遮蔽部がいずれも開口非重畳遮蔽部とされる構成であっても構わない。いずれの場合であっても、ドレイン配線接続部が一対の遮蔽部によって挟み込まれる構成となるので、画素電極を挟み込む一対のソース配線とドレイン配線接続部との間に生じる電界を一対の遮蔽部によって遮蔽することができ、十分な寄生容量低減効果を得ることができる。
(6)上記した各実施形態以外にも、共通電極における開口部の形成範囲や平面配置、開口重畳遮蔽部の形成範囲や平面配置、開口非重畳遮蔽部の形成範囲や平面配置、共通電極の開口部に対する開口重畳遮蔽部の重畳範囲や平面配置などは、適宜に変更可能である。
(7)上記した各実施形態では、画素電極のドレイン配線接続部を挟み込む形で一対の遮蔽部が設けられた場合を示したが、いずれか一方の遮蔽部(開口重畳遮蔽部または開口非重畳遮蔽部)を省略することも可能である。
(8)上記した各実施形態では、画素電極を挟み込む一対のソース配線と、ドレイン配線接続部と、の間の距離が異なる場合を示したが、上記距離が等しくなる構成であっても構わない。
(9)上記した各実施形態では、マトリクス状に平面配置された各画素電極におけるドレイン配線接続部が全て同じ側(図3などの右側)に偏在する場合を示したが、ドレイン配線接続部が一方側(例えば図3などの右側)に偏在する行と、ドレイン配線接続部が他方側(例えば図3などの左側)に偏在する行と、が交互に繰り返し並ぶ配列を採ることも可能である。その場合は、開口重畳遮蔽部及び開口非重畳遮蔽部が行毎に左右反転した配置とするのが好ましい。
(10)上記した各実施形態では、遮蔽部が容量配線やゲート配線と同層で且つ同一材料(第1金属膜)からなる場合を示したが、遮蔽部を容量配線やゲート配線とは異なる層に配置しつつも容量配線やゲート配線に対して接続することも可能である。その場合は、遮蔽部と容量配線やゲート配線との間に介在する絶縁膜にコンタクトホールを開口形成すればよい。
(11)上記した各実施形態では、遮蔽部が容量配線やゲート配線に接続される場合を示したが、遮蔽部を他の配線や電極に接続することも可能である。
(12)上記した各実施形態では、各絶縁膜に連通するコンタクトホールの形成範囲や平面形状を簡略化して図示したが、各絶縁膜のコンタクトホールの形成範囲や平面形状は適宜に変更可能であり、また各絶縁膜毎にコンタクトホールの形成範囲や平面形状を互いに異ならせることも可能である。
(13)上記した各実施形態では、画素電極が相対的に上層側に、共通電極が相対的に下層側に、それぞれ配された場合を示したが、画素電極を相対的に下層側に、共通電極を相対的に上層側に、それぞれ配置することも可能である。その場合は、共通電極の開口部から第3開口部を省略することが可能である。
(14)上記した各実施形態では、平面形状が長方形とされる液晶パネルについて示したが、平面形状が正方形、円形、楕円形などとされる液晶パネルにも本発明は適用可能である。
(15)上記した各実施形態では、ドライバが液晶パネルのアレイ基板に対してCOG実装される場合を例示したが、ドライバがフレキシブル基板に対してCOF(Chip On Film)実装される構成であってもよい。
(16)上記した各実施形態では、TFTのチャネル部を構成する半導体膜が酸化物半導体材料からなる場合を例示したが、それ以外にも、例えばポリシリコン(多結晶化されたシリコン(多結晶シリコン)の一種であるCGシリコン(Continuous Grain Silicon))やアモルファスシリコンを半導体膜の材料として用いることも可能である。
(17)上記した各実施形態では、液晶パネルのカラーフィルタが赤色、緑色及び青色の3色構成とされたものを例示したが、赤色、緑色及び青色の各着色部に、黄色の着色部を加えて4色構成としたカラーフィルタを備えたものにも本発明は適用可能である。
(18)上記した各実施形態では、一対の基板間に液晶層が挟持された構成とされる液晶パネル及びその製造方法について例示したが、一対の基板間に液晶材料以外の機能性有機分子(媒質層)を挟持した表示パネルについても本発明は適用可能である。
(19)上記した各実施形態では、液晶パネルのスイッチング素子としてTFTを用いたが、TFT以外のスイッチング素子(例えば薄膜ダイオード(TFD))を用いた液晶パネルにも適用可能であり、カラー表示する液晶パネル以外にも、白黒表示する液晶パネルにも適用可能である。
(20)上記した各実施形態では、表示パネルとして液晶パネルを例示したが、他の種類の表示パネル(PDP(プラズマディスプレイパネル)、有機ELパネル、EPD(電気泳動ディスプレイパネル)、MEMS(Micro Electro Mechanical Systems)表示パネルなど)にも本発明は適用可能である。
Claims (7)
- 画素電極と、
前記画素電極に供給する信号を伝送する信号配線と、
前記信号配線に対して間隔を空けた位置に配されて前記画素電極に接続される画素電極接続配線と、
前記信号配線と、前記画素電極における前記画素電極接続配線に対する接続箇所と、の間となる位置に配されて両者間の電界を遮蔽する遮蔽部と、
前記画素電極、前記信号配線及び前記画素電極接続配線とは異なる層にて少なくとも前記画素電極と重畳するよう配される共通電極であって、少なくとも前記信号配線と前記画素電極における前記接続箇所とに跨る範囲の開口部を有する共通電極と、を備え、
前記遮蔽部には、前記開口部の少なくとも一部と重畳するよう配される開口重畳遮蔽部が含まれる表示装置。 - 前記遮蔽部には、前記開口部とは非重畳となるよう配される開口非重畳遮蔽部が含まれる請求項1記載の表示装置。
- 前記信号配線は、前記画素電極を挟み込むよう一対配されており、
前記開口重畳遮蔽部及び前記開口非重畳遮蔽部は、前記画素電極における前記接続箇所を挟み込むよう配される請求項2記載の表示装置。 - 前記信号配線は、前記画素電極を挟み込むとともに前記接続箇所との間の距離が異なるよう一対配されており、
前記共通電極は、前記開口部が、少なくとも前記接続箇所との間の距離が短い前記信号配線と前記接続箇所とに跨る範囲とされており、
前記開口重畳遮蔽部は、一対の前記信号配線のうちの前記接続箇所との間の距離が短い前記信号配線と前記接続箇所との間となる位置に配されている請求項1から請求項3のいずれか1項に記載の表示装置。 - 前記開口重畳遮蔽部は、前記画素電極における前記接続箇所の少なくとも一部と、前記画素電極接続配線の少なくとも一部と、にそれぞれ重畳するよう配される請求項1から請求項4のいずれか1項に記載の表示装置。
- 前記共通電極は、前記開口部が前記信号配線及び前記画素電極における前記接続箇所に加えて前記画素電極接続配線にわたる範囲とされる請求項1から請求項5のいずれか1項に記載の表示装置。
- 前記信号配線と交差する形で延在し、前記画素電極及び前記信号配線とは異なる層にて前記画素電極の一部と重畳するよう配される容量配線を備えており、
前記遮蔽部は、前記容量配線に接続されている請求項1から請求項6のいずれか1項に記載の表示装置。
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