JP6573005B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6573005B1 JP6573005B1 JP2018127453A JP2018127453A JP6573005B1 JP 6573005 B1 JP6573005 B1 JP 6573005B1 JP 2018127453 A JP2018127453 A JP 2018127453A JP 2018127453 A JP2018127453 A JP 2018127453A JP 6573005 B1 JP6573005 B1 JP 6573005B1
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- electrode
- outer peripheral
- semiconductor device
- peripheral end
- partial electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 151
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- 239000010949 copper Substances 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 description 128
- 229910000679 solder Inorganic materials 0.000 description 24
- 239000011651 chromium Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000012447 hatching Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
特許文献1 特許第6129090号公報
特許文献2 特開2009−38139号公報
特許文献3 特開2008−258499号公報
非特許文献1 D.Siepe et al.,The future of Wire Bonding is ? Wire Bonding ! Proc. of CIPS 2010(2010)
Claims (9)
- 半導体基板と、
前記半導体基板の上方に設けられた第1材料を含む上面電極と、
前記上面電極の上面から下面まで貫通した開口部に設けられた、第1材料と異なる第2材料を含む部分電極と、
前記上面電極の上方に設けられ、前記上面電極に電気的に接続される引出し部と、
を備え、
前記部分電極は、前記半導体基板の上面視で、予め定められた第1方向に沿って、前記引出し部の前記第1方向における一方の端部位置から他方の端部位置まで、連続的に設けられ、
前記部分電極は、前記半導体基板の上面視で、前記第1方向と異なる予め定められた第2方向に沿って、前記引出し部の前記第2方向における一方の端部位置から他方の端部位置まで、連続的に設けられ、
前記部分電極は、前記第1方向に沿った部分と前記第2方向に沿った部分との交差部を有し、
前記部分電極は、前記半導体基板の上面視で、前記引出し部の内側に前記交差部を有し、前記引出し部の外側に前記交差部を有さず、
前記第2材料のヤング率が、前記第1材料のヤング率より高い、
半導体装置。 - 前記上面電極の上方には開口を有する保護膜が設けられ、
前記部分電極の少なくとも一部は前記保護膜の下方に設けられる、
請求項1に記載の半導体装置。 - 前記半導体基板の上面視で、前記交差部と前記引出し部とが重なる面積が、前記引出し部の面積の1/2以上である、請求項1または2に記載の半導体装置。
- 前記部分電極は、シード層と、導電部とを有し、
前記シード層は、前記開口部の底面に設けられ、
前記導電部は、前記シード層の上方に設けられる、
請求項1から3のいずれか一項に記載の半導体装置。 - 前記シード層が前記開口部の側面に設けられる、請求項4に記載の半導体装置。
- 前記シード層はタングステンを含む、請求項4または5に記載の半導体装置。
- 前記上面電極はアルミニウムを含み、
前記部分電極は銅を含む、
請求項1から6のいずれか一項に記載の半導体装置。 - 前記部分電極は多結晶の金属である、請求項1から7のいずれか一項に記載の半導体装置。
- 前記上面電極および前記部分電極の上方に、ニッケルを含む金属層が設けられる、請求項1から8のいずれか一項に記載の半導体装置。
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JP2018127453A JP6573005B1 (ja) | 2018-07-04 | 2018-07-04 | 半導体装置 |
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JP6573005B1 true JP6573005B1 (ja) | 2019-09-11 |
JP2020009828A JP2020009828A (ja) | 2020-01-16 |
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JP2018127453A Active JP6573005B1 (ja) | 2018-07-04 | 2018-07-04 | 半導体装置 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7447530B2 (ja) | 2020-02-17 | 2024-03-12 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4058007B2 (ja) * | 2004-03-03 | 2008-03-05 | 株式会社東芝 | 半導体装置 |
JP4293272B2 (ja) * | 2007-11-09 | 2009-07-08 | サンケン電気株式会社 | 半導体装置 |
JP5212297B2 (ja) * | 2008-11-07 | 2013-06-19 | 株式会社デンソー | 半導体装置 |
JP2015076470A (ja) * | 2013-10-08 | 2015-04-20 | トヨタ自動車株式会社 | 半導体装置 |
JP6129090B2 (ja) * | 2014-01-30 | 2017-05-17 | 三菱電機株式会社 | パワーモジュール及びパワーモジュールの製造方法 |
JP2017050358A (ja) * | 2015-08-31 | 2017-03-09 | トヨタ自動車株式会社 | 半導体装置 |
JP6673088B2 (ja) * | 2016-08-05 | 2020-03-25 | トヨタ自動車株式会社 | 半導体装置 |
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