JP6560887B2 - トランジスタ基板および表示装置 - Google Patents
トランジスタ基板および表示装置 Download PDFInfo
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- JP6560887B2 JP6560887B2 JP2015079124A JP2015079124A JP6560887B2 JP 6560887 B2 JP6560887 B2 JP 6560887B2 JP 2015079124 A JP2015079124 A JP 2015079124A JP 2015079124 A JP2015079124 A JP 2015079124A JP 6560887 B2 JP6560887 B2 JP 6560887B2
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02—OPTICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Description
本実施の形態で説明する技術は、表示素子層が設けられた表示領域の複数の素子に、表示領域の周囲から信号を供給する構成を備える表示装置に広く適用可能である。なお、表示素子層は光の出力をコントロールできるものであればどのような構造でも良い。表示素子層の例としては液晶分子、有機EL(Electro-Luminescence)、Micro Electro Mechanical System(MEMS)シャッターが挙げられる。本実施の形態では、表示素子層及び表示装置の代表例として、液晶表示装置を取り上げて説明する。
まず、表示装置の基本構成について説明する。図1は、本実施の形態の表示装置の一例を示す平面図である。図2は、図1のA−A線に沿った断面図である。図3は、図2のB部の拡大断面図である。図4は、図2のC部の拡大断面図である。
次に、図1に示す引出配線部LDの詳細について説明する。図5は、図1に示す引出配線部のレイアウトを模式的に示す拡大平面図である。図6は、図5に示す引出配線部において、複数の配線を2層の配線層で引き回した場合のレイアウト例を示す拡大平面図である。図7〜図12は、図6に示すレイアウト例の配線の各部(A部、B部、C部、D部、E部、F部)を示す拡大平面図である。図13は、図9に示す配線のG部を詳細に示す拡大平面図である。図14は、図13のA−A線に沿った拡大断面図である。
本実施の形態の表示装置LCD1における変形例について説明する。変形例においては、上述した図6〜図16に示す表示装置LCD1との相違点を主に説明する。図22は、図6(図14)に対する変形例であって、5本の配線が一組の複数の配線を2層の配線層で引き回した場合のレイアウト例を示す拡大断面図である。図23は、図6(図14)に対する変形例であって、4本の配線が一組の複数の配線を3層の配線層で引き回した場合のレイアウト例を示す拡大断面図である。
以上説明した本実施の形態の表示装置LCD1(LCD3、LCD4)によれば、表示装置LCD1の額縁部FLにおいて、表示装置LCD1の性能への影響を抑制しながら、複数の配線WLを効率的にレイアウトする技術を提供することができる。より詳細には、以下の通りである。
BM 遮光膜
BS、FS 基板
BSb、FSb 背面
BSf、FSf 前面
BSg、FSg 基材
BSs1、BSs2、BSs3、BSs4 辺
CC 回路部
CE 共通電極
CF カラーフィルタ
CFr、CFg、CFb カラーフィルタ画素
CHP 半導体チップ
CNT1 制御回路
CR 変換部
CA 変換領域
DP 表示部
DPQ 表示素子部
DR1 駆動回路
DT ドレイン電極
EG11、EG12、EG21、EG22 端部
FL 額縁部
GP 隙間
GT ゲート電極
IL1、IL2、IL3 絶縁膜
IPC 入力部
L1、L2、L3 配線層
LCD1、LCD2、LCD3、LCD4 表示装置
LCL 液晶層
LD 引出配線部
LS 光源
OC1、OC2 樹脂層
OP1 開口部
P21、P22 位置
PE 画素電極
PL1、PL2 偏光板
PS 部材
Q1 トランジスタ
S1、S2、S3 離間距離
SCL 半導体層
SL シール部
SLp シール材
ST ソース電極
SW1、SW2 信号線
VW 観者
W1、W2、W3 配線幅
WL、WL1、WL2、WL3 配線
Claims (9)
- 基板と、
トランジスタを有し、画像を表示させる画素が形成された画素領域と、
前記基板の端部と前記画素領域との間に位置する縁領域と、
ゲート信号または映像信号の一方の駆動信号が供給される複数の引出配線と、
前記引出配線を覆う絶縁膜と、
前記縁領域に設けられ、少なくとも前記駆動信号を供給する駆動ドライバと、
第1層に形成された複数の第1配線と、
前記第1層とは前記絶縁膜を介して異なる層にある第2層に形成された複数の第2配線と、
を備え、
複数の前記引出配線は、第1引出配線と、第2引出配線と、第3引出配線と、を含み、
前記第1乃至第3引出配線は、前記駆動ドライバに接続され、前記縁領域および前記画素領域に形成されており、
前記縁領域において、
前記第1乃至第3引出配線のぞれぞれは、前記第2配線から前記第1配線を経由して前記第2配線に戻るように形成され、
平面視において、前記第1乃至第3引出配線のいずれか一つの引出配線に含まれる前記第1配線は、前記第1乃至第3引出配線の他の2つの引出配線に含まれるそれぞれの前記第2配線と重畳しており、前記他の2つの引出配線に含まれるそれぞれの前記第2配線は、前記いずれか一つの引出配線に含まれる前記第1配線に隣接して配置される他の前記第1配線とは重畳しておらず、
前記第1乃至第3引出配線のそれぞれが経由する前記第1配線の長さは、同等であり、
前記第1乃至第3引出配線は一組3本の配線であり、
前記一組3本の配線には、複数の前記駆動ドライバからの正極性の電圧が供給されており、
平面視において、前記一組3本の配線の隣に配置される別の前記一組3本の配線には、前記複数の駆動ドライバからの負極性の電圧が供給されている、
トランジスタ基板。 - 請求項1に記載のトランジスタ基板において、
前記第1配線の材料と前記第2配線の材料とは、互いに異なっており、
前記第2配線の材料の比抵抗は、前記第1配線の材料の比抵抗よりも低い、
トランジスタ基板。 - 請求項2に記載のトランジスタ基板において、
前記第1配線の線幅は、前記第2配線の線幅よりも広く、
前記一組3本の配線において、前記第1配線の線幅方向の両端部は前記第1配線と重なる2つの前記第2配線のそれぞれに重なり、前記第1配線に重なる2つの前記第2配線のそれぞれにおける線幅方向の一方の端部は、前記第1配線に重なり、前記第1配線に重なる2つの前記第2配線のそれぞれにおける線幅方向の他方の端部は、前記第1配線に重ならず、
前記一組3本の配線の前記第1配線と、前記一組3本の配線の隣に配置される前記別の一組3本の配線の前記第1配線との離間距離は、前記一組3本の配線の前記第1配線と重なる2つの前記第2配線同士の離間距離よりも広い、
トランジスタ基板。 - 請求項2に記載のトランジスタ基板において、
前記第2配線の厚みは、前記第1配線の厚みよりも厚い、
トランジスタ基板。 - 請求項2に記載のトランジスタ基板において、
前記第2層における前記第2配線の配線密度は、前記第1層における前記第1配線の配線密度よりも高い、
トランジスタ基板。 - 請求項3に記載のトランジスタ基板において、
前記縁領域において、前記第1乃至第3引出配線を交差させて、前記第1乃至第3引出配線の配列順番を変更する交差部がある、
トランジスタ基板。 - 請求項6に記載のトランジスタ基板において、
平面視の前記縁領域において、
前記駆動ドライバは、前記画素領域に対して第1方向に設けられ、
前記第1乃至第3引出配線のそれぞれは、配線層を変換する変換部を介して前記第2配線から前記第1配線を経由し、
前記駆動ドライバの端部と前記画素領域の端部との間の前記第1方向の領域に前記変換部があり、
前記変換部における変換前と変換後では、前記第1乃至第3引出配線の配列順番が異なっている、
トランジスタ基板。 - 請求項7に記載のトランジスタ基板において、
平面視の前記縁領域において、
前記駆動ドライバの端部と前記画素領域の端部との間の、前記第1方向に交差する第2方向の半分の位置から、当該画素領域の端部までの間に前記変換部がない、
トランジスタ基板。 - 請求項7に記載のトランジスタ基板を備えた表示装置であって、
前記縁領域には、前記第1方向に沿って紫外線硬化樹脂が形成されており、
前記基板は、光透過性であり、
前記一組3本の配線が形成された領域と、前記一組3本の配線の隣に配置される前記別の一組3本の配線が形成された領域と、前記紫外線硬化樹脂が形成された領域とが重畳した重畳領域において、前記基板を介して紫外光を前記紫外線硬化樹脂に照射可能な隙間を作るように、前記一組3本の配線と前記別の一組3本の配線が形成されており、
前記隙間は、互いに隣り合う、前記一組3本の配線に含まれる前記第2配線と前記別の一組3本の配線に含まれる前記第2配線とが離間された領域である、
表示装置。
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