JP6560175B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6560175B2 JP6560175B2 JP2016178970A JP2016178970A JP6560175B2 JP 6560175 B2 JP6560175 B2 JP 6560175B2 JP 2016178970 A JP2016178970 A JP 2016178970A JP 2016178970 A JP2016178970 A JP 2016178970A JP 6560175 B2 JP6560175 B2 JP 6560175B2
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 239000004020 conductor Substances 0.000 claims description 116
- 230000005669 field effect Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 33
- 239000011229 interlayer Substances 0.000 description 17
- 230000008878 coupling Effects 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 14
- 238000005859 coupling reaction Methods 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 208000036252 interstitial lung disease 1 Diseases 0.000 description 11
- 239000007769 metal material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 208000036971 interstitial lung disease 2 Diseases 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 210000001520 comb Anatomy 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 101001128814 Pandinus imperator Pandinin-1 Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Description
図1は、第1実施形態による高周波送受信回路1の構成例を示す図である。高周波送受信回路1は、高周波信号を送受信する電気機器に用いることができ、例えば、携帯電話、スマートフォン、無線タブレット、無線ルータなどの移動体通信端末、あるいは、無線基地局、無線アクセスポイントに適用することができる。高周波送受信回路1は、1つの半導体チップとして構成されていてもよく、あるいは、複数の半導体チップで構成されたモジュールとして構成されていてもよい。
図9は、第2実施形態によるRFスイッチ回路5の構成例を示す断面図である。第2実施形態は、図3および図4に示す構成(C1、C2)の両方に適用可能である。しかし、ここでは、第2実施形態を図4に示す構成(C2)に適用した場合を説明し、図3に示す構成(C1)に適用した場合の説明を省略する。
Claims (6)
- 半導体層に設けられ、高周波信号を通過または遮断するFET(Field Effect Transistor)と、
前記FETの上方に設けられた信号配線または端子と、
前記FETと前記信号配線または前記端子との間に設けられ、前記半導体層の表面と平行の平面上に配列された複数の導体とを備え、
前記平面上において、前記複数の導体の辺の長さは、前記FETのゲート長方向に対して垂直方向における該FETの幅よりも小さく、
前記複数の導体は、前記半導体層の表面上方から見たときに、前記FETと前記信号配線との重複領域全体に配置されている、半導体装置。 - 半導体層に設けられ、高周波信号を通過または遮断するFET(Field Effect Transistor)と、
前記FETの上方に設けられた信号配線または端子と、
前記FETと前記信号配線または前記端子との間に設けられ、前記半導体層の表面と平行の平面上に配列された複数の導体とを備え、
前記平面上において、前記複数の導体の辺の長さは、前記FETのゲート長方向に対して垂直方向における該FETの幅よりも小さく、
前記複数の導体は、前記平面上にマトリクス状に配置されている、半導体装置。 - 前記複数の導体は、電気的に浮遊状態である、請求項1または請求項2に記載の半導体装置。
- 前記複数の導体は、
前記半導体層の表面と平行の第1平面上に配列された複数の第1導体と、
前記半導体層の表面と平行でありかつ前記第1平面と前記信号配線または前記端子との間にある第2平面上に配列された複数の第2導体とを含む、請求項1から請求項3のいずれか一項に記載の半導体装置。 - 前記第1平面上における前記複数の第1導体間の間隔は、前記第2平面上における前記複数の第2導体間の間隔よりも狭い、請求項4に記載の半導体装置。
- 前記第1平面上における前記複数の第1導体の大きさは、前記第2平面上における前記複数の第2導体の大きさよりも小さい、請求項4または請求項5に記載の半導体装置。
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