JP6551301B2 - Electronic device and method of manufacturing electronic device - Google Patents

Electronic device and method of manufacturing electronic device Download PDF

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JP6551301B2
JP6551301B2 JP2016100856A JP2016100856A JP6551301B2 JP 6551301 B2 JP6551301 B2 JP 6551301B2 JP 2016100856 A JP2016100856 A JP 2016100856A JP 2016100856 A JP2016100856 A JP 2016100856A JP 6551301 B2 JP6551301 B2 JP 6551301B2
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electrode
main surface
hole
pad portion
electronic device
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JP2017208489A (en
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優輝 稲垣
優輝 稲垣
一志 浅海
一志 浅海
悠希 大原
悠希 大原
松井　正樹
正樹 松井
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

本発明は、電子装置、および電子装置の製造方法に関するものである。 The present invention, electronic device, a method of manufacturing a contact and an electronic device.

従来より、例えば、電子部品として、基板に孔部が形成され、当該孔部に電極が埋め込まれたものが提案されている（例えば、特許文献１参照）。なお、電極は、少なくとも一部が孔部から露出するように配置され、露出されている部分にて外部回路との電気的な接続が図れるようになっている。   Conventionally, for example, as an electronic component, one in which a hole is formed in a substrate and an electrode is embedded in the hole has been proposed (see, for example, Patent Document 1). Note that the electrodes are disposed so that at least a part is exposed from the hole, and an electrical connection with an external circuit can be achieved at the exposed part.

このような電子部品は、基板に孔部を形成した後、孔部内に電極を構成する金属材料を溶融した溶融金属を充填し、当該溶融金属を固化して電極を形成することで構成される。なお、電極は、溶融金属を充填して固化することで形成されるため、融点の低いはんだ等の金属材料で構成される。   Such an electronic component is configured by forming a hole in a substrate and then filling the hole with a molten metal obtained by melting a metal material constituting the electrode, solidifying the molten metal to form an electrode. . In addition, since an electrode is formed by filling and solidifying a molten metal, it is comprised with metal materials, such as solder with a low melting | fusing point.

特開２００７−２０８２９６号公報JP 2007-208296 A

ところで、このような電子部品は、パッド部が形成された被実装部材上に、パッド部と電極とが電気的に接続されるように搭載されて用いられる。しかしながら、上記電子部品は、電極が融点の低い金属材料で構成されているため、電子部品を被実装部材に搭載する際や使用環境等により、電極を構成する金属材料が再び溶融して孔部から流出してしまう可能性がある。   By the way, such an electronic component is used by being mounted so that a pad part and an electrode may be electrically connected on the mounting member in which the pad part was formed. However, in the electronic component described above, since the electrode is made of a metal material having a low melting point, the metal material constituting the electrode is melted again due to the use environment when mounting the electronic component on a mounting member, etc. May be leaked from.

本発明は上記点に鑑み、孔部から電極を構成する金属材料が流出することを抑制できる電子装置、および電子装置の製造方法を提供することを目的とする。 The present invention has been made in view of the above point, can Ru electronic device to suppress the metallic material will flow out to form an electrode from the hole, and an object thereof is to provide a method of manufacturing a contact and an electronic device.

上記目的を達成するための請求項１では、電極（４２）を有する電子部品（１０）と、電極と電気的に接続されるパッド部（５４）が形成された被実装部材（５０）とを備える電子装置において、電子部品は、第１主面（１１ａ）および第１主面と反対側の第２主面（１１ｂ）を有する主基板（１１）を備える構成部材（１２）と、構成部材に形成された、主基板の第２主面側が開口部とされていると共に第１主面側が底部とされた孔部（４０）に配置され、金属材料で構成されている電極と、を備え、被実装部材は、パッド部が基板の第２主面と対向する一面（５１ａ）側に形成された被実装基板（５１）を有し、電極とパッド部との間には、孔部における開口部を閉塞すると共に電極と電気的に接続され、かつ電極を構成する金属材料よりも融点の高い金属材料で構成された蓋部（６０）が形成され、電極とパッド部とは、蓋部を介して電気的に接続されており、蓋部は、電極を構成する金属原子と、パッド部を構成する金属原子とが固相拡散することで構成された合金層とされている。 In claim 1 for achieving the above object, an electronic component (10) having an electrode (42) and a mounted member (50) having a pad portion (54) electrically connected to the electrode are provided. In the electronic device, the electronic component includes a component (12) including a main substrate (11) having a first main surface (11a) and a second main surface (11b) opposite to the first main surface, and a component And an electrode made of a metal material and disposed in a hole (40) having an opening on the second main surface side of the main substrate and a bottom on the first main surface side. The mounting member has a mounting substrate (51) formed on the side (51a) where the pad portion faces the second main surface of the substrate, and a hole is formed between the electrode and the pad portion. A metal material that closes the opening, is electrically connected to the electrode, and constitutes the electrode. Also formed lid portion configured with a higher metal material melting point (60), the electrode and the pad portion are electrically connected through the lid portion, the lid portion includes a metal atom constituting the electrode The alloy layer is formed by solid phase diffusion of metal atoms constituting the pad portion .

これによれば、電子装置が電極を構成する金属材料の融点以上の温度で使用される場合等において、電極が溶融して孔部から流出することを抑制できる。   According to this, when the electronic device is used at a temperature equal to or higher than the melting point of the metal material constituting the electrode, it is possible to suppress the electrode from melting and flowing out from the hole.

そして、請求項３では、電極（４２）を有する電子部品（１０）と、電極と電気的に接続されるパッド部（５４）が形成された被実装部材（５０）とを備える電子装置の製造方法において、第１主面（１１ａ）および第１主面と反対側の第２主面（１１ｂ）を有する主基板（１１）を備える構成部材（１２）を用意することと、構成部材に対し、主基板の第２主面側が開口部となると共に主基板の第１主面側が底部となる孔部（４０）を形成することと、孔部に溶融金属を充填し、当該溶融金属を冷却することで孔部に電極を形成することと、一面（５１ａ）を有し、当該一面側にパッド部が形成された被実装基板（５１）を有する被実装部材を用意することと、電極とパッド部とが電気的に接続されるように、被実装部材上に電子部品を搭載することと、を行い、被実装部材に電子部品を搭載することでは、電極のうちの主基板の第２主面側から露出する部分とパッド部とが当接するように、被実装部材上に電子部品を搭載して積層体（７０）を構成することと、電極を構成する金属材料の融点未満の温度に維持しつつ、被実装部材と電子部品との積層方向に積層体を加圧することにより、電極を構成する金属原子とパッド部を構成する金属原子とを固相拡散させて孔部における第２主面側の開口部を閉塞する蓋部（７０）を形成しつつ、当該蓋部を介して電極とパッド部とを電気的、機械的に接続することを行うこととしている。 And in Claim 3 , manufacture of an electronic device provided with electronic parts (10) which have an electrode (42), and a mounting member (50) in which a pad part (54) electrically connected with an electrode was formed In a method, preparing a component (12) comprising a main substrate (11) having a first main surface (11a) and a second main surface (11b) opposite to the first main surface, and for the component Forming a hole (40) in which the second main surface side of the main substrate is an opening and the first main surface side of the main substrate is a bottom, and the hole is filled with molten metal to cool the molten metal Forming an electrode in the hole, preparing a mounting member having a mounting substrate (51) having a surface (51a) and having a pad portion on the surface, and an electrode The electronic component is mounted on the mounting member so that the pad portion is electrically connected. And mounting the electronic component on the mounting member, the portion of the electrode exposed from the second main surface side of the main substrate and the pad portion abut on the mounting member Mounting the electronic component to construct the laminate (70), and pressing the laminate in the stacking direction of the mounting member and the electronic component while maintaining the temperature below the melting point of the metal material constituting the electrode By solid-phase diffusing the metal atoms constituting the electrode and the metal atoms constituting the pad, thereby forming a lid (70) for closing the opening on the second main surface side in the hole, while the lid is concerned The electrode and the pad portion are electrically and mechanically connected via the via.

これによれば、電極よりも融点の高い金属材料で蓋部を形成しているため、電子装置が電極を構成する金属材料の融点以上の温度で使用される場合等において、電極が溶融して孔部から流出することを抑制できる。さらに、電極を構成する金属材料の融点未満の温度条件下において当該蓋部を形成するため、蓋部を形成する際に電極が溶融して孔部から流出することも抑制できる。また、電極を構成する金属材料の融点未満の温度に維持しつつ、被実装部材と電子部品との積層方向に積層体を加圧することにより、蓋部を形成することと、電極とパッド部とを電気的、機械的に接続することとを同一工程で行っているため、製造工程数が増加することを抑制できる。   According to this, since the lid portion is formed of a metal material having a melting point higher than that of the electrode, the electrode melts when the electronic device is used at a temperature higher than the melting point of the metal material constituting the electrode. Outflow from the hole can be suppressed. Furthermore, since the lid is formed under the temperature condition lower than the melting point of the metal material constituting the electrode, it is possible to suppress the electrode from melting and flowing out from the hole when the lid is formed. Further, forming a lid by pressing the laminate in the stacking direction of the mounting member and the electronic component while maintaining the temperature below the melting point of the metal material constituting the electrode, and forming the electrode and the pad Since electrical and mechanical connection are performed in the same step, it is possible to suppress an increase in the number of manufacturing steps.

なお、上記および特許請求の範囲における括弧内の符号は、特許請求の範囲に記載された用語と後述の実施形態に記載される当該用語を例示する具体物等との対応関係を示すものである。   Note that the reference numerals in parentheses in the above and the claims indicate the correspondence between the terms described in the claims and the concrete items and the like that exemplify the terms described in the embodiments described later. .

第１実施形態における電子装置の断面図である。It is sectional drawing of the electronic device in 1st Embodiment. 図１に示す電子装置の製造工程を示す断面図である。FIG. 7 is a cross-sectional view showing a manufacturing process of the electronic device shown in FIG. 1. 図２に続く電子装置の製造工程を示す断面図である。FIG. 3 is a cross-sectional view showing a manufacturing step of the electronic device following FIG. 2. 第２実施形態における電子部品の断面図である。It is sectional drawing of the electronic component in 2nd Embodiment. 図４に示す電子部品を被実装部材に搭載してなる電子装置の断面図である。It is sectional drawing of the electronic device formed by mounting the electronic component shown in FIG. 4 on a to-be-mounted member. 図４に示す電子部品の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the electronic component shown in FIG.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same as or equivalent to each other will be described with the same reference numerals.

（第１実施形態）
第１実施形態について図面を参照しつつ説明する。まず、本実施形態の電子装置の構造について説明する。本実施形態の電子装置は、図１に示されるように、電子部品１０が被実装部材５０に搭載されて構成されている。 First Embodiment
A first embodiment will be described with reference to the drawings. First, the structure of the electronic device of the present embodiment will be described. As the electronic device of this embodiment is shown by FIG. 1, the electronic component 10 is mounted in the to-be-mounted member 50, and is comprised.

電子部品１０は、第１主面１１ａおよび当該第１主面１１ａと反対側の第２主面１１ｂを有し、図示しないトランジスタ等の半導体素子が形成された主基板１１を備えている。なお、本実施形態では、主基板１１としてシリコン基板や炭化珪素基板等が用いられる。   The electronic component 10 has a first main surface 11a and a second main surface 11b opposite to the first main surface 11a, and includes a main substrate 11 on which a semiconductor element such as a transistor (not shown) is formed. In the present embodiment, a silicon substrate, a silicon carbide substrate, or the like is used as the main substrate 11.

そして、主基板１１の第１主面１１ａには、配線層２０が備えられている。本実施形態では、配線層２０は、層間絶縁膜２１内において、配線部２２が主基板１１の第１主面１１ａに対する法線方向に沿って積層された多層配線とされている。   A wiring layer 20 is provided on the first main surface 11 a of the main substrate 11. In the present embodiment, in the interlayer insulating film 21, the wiring layer 20 is a multilayer wiring in which the wiring portion 22 is stacked along the normal direction to the first major surface 11 a of the main substrate 11.

なお、図１では、層間絶縁膜２１を簡略して示しているが、実際には層間絶縁膜２１は複数層の絶縁膜が積層されて構成されている。また、図１とは別断面において、各配線部２２は、適宜貫通ビア電極等を介して互いに電気的に接続されていると共に、主基板１１に形成された半導体素子と適宜貫通ビア電極等を介して電気的に接続されている。そして、本実施形態では、主基板１１および配線層２０にて構成部材１２が構成されている。   Although FIG. 1 shows the interlayer insulating film 21 in a simplified manner, in reality, the interlayer insulating film 21 is configured by laminating a plurality of insulating films. In addition, in the cross section different from that in FIG. 1, the wiring portions 22 are electrically connected to one another through appropriate through via electrodes etc., and the semiconductor elements formed on the main substrate 11 are suitably connected with the through via electrodes etc. Is electrically connected. In the present embodiment, the constituent member 12 is configured by the main substrate 11 and the wiring layer 20.

主基板１１の第２主面１１ｂ側には、主面絶縁膜３０が形成されている。なお、主面絶縁膜３０は、ＴＥＯＳ（すなわち、Tetra ethyl ortho silicate）等で構成されている。   A main surface insulating film 30 is formed on the second main surface 11 b side of the main substrate 11. The main surface insulating film 30 is made of TEOS (that is, tetra ethyl ortho silicate) or the like.

そして、電子部品１０には、主面絶縁膜３０および主基板１１を貫通して配線部２２を露出させる孔部４０が形成されている。つまり、構成部材１２には、主基板１１の第２主面１１ｂ側が開口部とされていると共に第１主面１１ａ側が底部とされた孔部４０が形成されている。以下では、配線部２２のうちの孔部４０にて露出される配線部２２を接続配線部２２ａとして説明する。そして、孔部４０には、側面に側面絶縁膜４１が形成されている共に、側面絶縁膜４１を介して電極４２が埋め込まれている。本実施形態では、側面絶縁膜４１は、ＴＥＯＳ等で構成され、電極４２は、はんだで構成されている。   The electronic component 10 is provided with a hole 40 that penetrates the main surface insulating film 30 and the main substrate 11 and exposes the wiring part 22. That is, in the component member 12, the hole 40 in which the second main surface 11b side of the main substrate 11 is an opening and the bottom of the first main surface 11a is formed is formed. Below, the wiring part 22 exposed by the hole 40 of the wiring parts 22 is demonstrated as the connection wiring part 22a. A side insulating film 41 is formed on the side surface of the hole 40, and an electrode 42 is embedded via the side insulating film 41. In the present embodiment, the side surface insulating film 41 is made of TEOS or the like, and the electrode 42 is made of solder.

被実装部材５０は、一面５１ａを有し、当該一面５１ａ側に配線部５２が形成された被実装基板５１を有している。なお、本実施形態では、被実装基板５１としてシリコン基板や炭化珪素基板等が用いられる。そして、被実装基板５１の一面５１ａ上には、配線部５２を露出させるコンタクトホール５３ａが形成された一面絶縁膜５３が配置されていると共に、コンタクトホール５３ａを介して配線部５２と電気的に接続されるパッド部５４が形成されている。   The mounted member 50 has a mounted substrate 51 having one surface 51a and a wiring portion 52 formed on the one surface 51a side. In the present embodiment, a silicon substrate, a silicon carbide substrate or the like is used as the mounting substrate 51. Then, on the one surface 51a of the mounting substrate 51, the one-sided insulating film 53 in which the contact hole 53a for exposing the wiring portion 52 is formed is disposed, and electrically connected with the wiring portion 52 via the contact hole 53a. A pad portion 54 to be connected is formed.

パッド部５４は、電子部品１０に備えられた電極４２を構成する金属材料より融点が高い金属材料を用いて構成され、例えば、Ｎｉ膜、Ｔｉ膜、ＴｉＷ膜、Ｃｕ膜のいずれか１つの金属膜、またはこれらの金属膜が複数積層されることで構成されている。   The pad portion 54 is formed using a metal material having a melting point higher than that of the metal material constituting the electrode 42 provided in the electronic component 10, and, for example, any one metal of Ni film, Ti film, TiW film, Cu film A film or a plurality of these metal films are stacked.

そして、電子部品１０は、電極４２のうちの接続配線部２２ａと反対側の一端部（以下では、電極４２の一端部という）が被実装部材５０のパッド部５４と電気的、機械的に接続されるように、被実装部材５０に搭載されている。具体的には、電極４２とパッド部５４と界面には、孔部４０を閉塞するように蓋部６０が形成されている。言い換えると、電極４２とパッド部５４との界面には、電極４２を孔部４０から露出させないように蓋部６０が形成されている。この蓋部６０は、具体的には後述するが、電極４２を構成する金属原子と、パッド部５４を構成する金属原子とが固相拡散することで構成される合金層である。そして、電極４２とパッド部５４とは、当該蓋部６０を介して電気的、機械的に接続されている。   In the electronic component 10, one end of the electrode 42 on the opposite side to the connection wiring portion 22a (hereinafter referred to as one end of the electrode 42) is electrically and mechanically connected to the pad 54 of the mounting member 50 As described above, it is mounted on the mounted member 50. Specifically, a lid 60 is formed at the interface between the electrode 42 and the pad 54 so as to close the hole 40. In other words, the lid 60 is formed at the interface between the electrode 42 and the pad 54 so as not to expose the electrode 42 from the hole 40. Although specifically described later, the lid portion 60 is an alloy layer formed by solid-phase diffusion of metal atoms constituting the electrode 42 and metal atoms constituting the pad portion 54. The electrode 42 and the pad 54 are electrically and mechanically connected via the lid 60.

なお、蓋部６０は、電極４２を構成する金属原子とパッド部５４を構成する金属原子とが固相拡散することで構成されるため、電極４２より融点が高く、パッド部５４より融点が低い合金層となる。   The lid 60 is formed by solid-phase diffusion of the metal atoms constituting the electrode 42 and the metal atoms constituting the pad 54, so the melting point is higher than the electrode 42 and the melting point is lower than the pad 54. It becomes an alloy layer.

また、パッド部５４は、被実装部材５０と電子部品１０との積層方向（以下では、単に積層方向という）から視たとき、当該パッド部５４の外周に沿った長さが電極４２の外周に沿った長さより長くされている。つまり、積層方向から視たとき、パッド部５４は、電極４２より平面形状（すなわち、面積）が大きくされている。言い換えると、積層方向から視たとき、パッド部５４は電極４２から突出している。   In the pad portion 54, the length along the outer periphery of the pad portion 54 corresponds to the outer periphery of the electrode 42 when viewed from the stacking direction of the mounting member 50 and the electronic component 10 (hereinafter simply referred to as the stacking direction). It is longer than the length along. That is, when viewed in the stacking direction, the pad portion 54 has a planar shape (that is, an area) larger than that of the electrode 42. In other words, the pad portion 54 protrudes from the electrode 42 when viewed from the stacking direction.

以上が本実施形態における電子装置の構成である。次に、上記電子装置の製造方法について説明する。   The above is the configuration of the electronic device in this embodiment. Next, a method for manufacturing the electronic device will be described.

まず、図２（ａ）に示されるように、半導体素子が形成されている主基板１１を用意した後、第１主面１１ａ側に配線層２０を形成することで構成部材１２を用意する。なお、半導体素子および配線層２０は、周知の半導体製造プロセスによって形成される。   First, as shown in FIG. 2A, after preparing the main substrate 11 on which the semiconductor element is formed, the component layer 12 is prepared by forming the wiring layer 20 on the side of the first major surface 11a. The semiconductor element and the wiring layer 20 are formed by a known semiconductor manufacturing process.

次に、図２（ｂ）に示されるように、主基板１１の第２主面１１ｂ側に図示しないマスクを配置し、ドライエッチング等により、主基板１１を貫通して接続配線部２２ａに達する孔部４０を形成する。つまり、構成部材１２に対し、主基板１１の第２主面１１ｂ側が開口部となると共に、主基板１１の第１主面１１ａ側が底部となる孔部４０を形成する。続いて、主基板１１の第２主面１１ｂ側からＴＥＯＳ等の絶縁膜を成膜する。これにより、孔部４０の側面に側面絶縁膜４１が形成されると共に、主基板１１の第２主面１１ｂに主面絶縁膜３０が形成される。その後、絶縁膜は孔部４０の底部にも成膜されるため、孔部４０の底部に成膜された絶縁膜をドライエッチング等により除去し、再び孔部４０から接続配線部２２ａを露出させる。   Next, as shown in FIG. 2B, a mask (not shown) is disposed on the side of the second main surface 11b of the main substrate 11, and penetrates the main substrate 11 by dry etching or the like to reach the connection wiring portion 22a. A hole 40 is formed. That is, in the component member 12, the second main surface 11 b side of the main substrate 11 is an opening, and the hole 40 in which the first main surface 11 a side of the main substrate 11 is a bottom is formed. Subsequently, an insulating film such as TEOS is formed from the side of the second major surface 11 b of the main substrate 11. As a result, the side surface insulating film 41 is formed on the side surface of the hole 40, and the main surface insulating film 30 is formed on the second main surface 11 b of the main substrate 11. Thereafter, since the insulating film is also formed on the bottom of the hole 40, the insulating film formed on the bottom of the hole 40 is removed by dry etching or the like to expose the connection wiring portion 22a from the hole 40 again. .

続いて、図２（ｃ）に示されるように、孔部４０に、接続配線部２２ａと電気的に接続される電極４２を形成する。本実施形態では、電極４２を次のように形成する。すなわち、まず、はんだを溶融した溶融金属中に図３（ｂ）の工程まで行ったものを浸漬させ、孔部４０内に溶融金属を流入させて充填する。その後、このものを引き上げて冷却し、孔部４０内に充填された溶融金属を固化することで電極４２を形成する。   Subsequently, as shown in FIG. 2C, an electrode 42 that is electrically connected to the connection wiring portion 22 a is formed in the hole 40. In the present embodiment, the electrode 42 is formed as follows. That is, first, what has been performed up to the step of FIG. 3B is dipped in the molten metal obtained by melting the solder, and the molten metal is made to flow into the hole 40 and be filled. Thereafter, this is pulled up and cooled, and the molten metal filled in the hole 40 is solidified to form the electrode 42.

なお、図２（ｃ）の工程を行う前に、側面絶縁膜４１上に溶融金属（すなわち、はんだ）の濡れ性が高い金属膜を形成し、溶融金属が孔部４０内に流入し易くなるようにしてもよい。また、孔部４０に電極４２を形成する工程では、図３（ｂ）の工程まで行ったものを溶融金属中に浸漬させる代わりに、溶融金属を孔部４０に直接流し込み、その後に冷却することで電極４２を形成するようにしてもよい。   Incidentally, before performing the step of FIG. 2C, a metal film having high wettability of molten metal (that is, solder) is formed on the side surface insulating film 41, and the molten metal easily flows into the hole 40. You may do it. Further, in the step of forming the electrode 42 in the hole 40, instead of immersing in the molten metal what has been performed up to the step of FIG. 3 (b), the molten metal is poured directly into the hole 40 and then cooled. Alternatively, the electrode 42 may be formed.

次に、図３（ａ）に示されるように、ドライエッチング等により、主面絶縁膜３０の厚さを全体的に薄くし、電極４２の一端部を主面絶縁膜３０から突出させる。   Next, as shown in FIG. 3A, the thickness of the main surface insulating film 30 is entirely reduced by dry etching or the like, and one end of the electrode 42 is made to project from the main surface insulating film 30.

続いて、図３（ｂ）に示されるように、上記パッド部５４等を有する被実装部材５０を用意する。そして、電子部品１０における主基板１１の第２主面１１ｂと被実装基板５１の一面５１ａとが対向し、電極４２の一端部とパッド部５４とが当接するように、被実装部材５０上に電子部品１０を積層して積層体７０を構成する。この際、上記のように、電極４２の一端部を主面絶縁膜３０から突出させているため、主面絶縁膜３０が一面絶縁膜５３と当接することにより、電極４２とパッド部５４とが当接しないことが抑制される。また、電極４２およびパッド部５４は、積層方向から視たとき、パッド部５４の平面形状が電極４２の平面形状より大きくされているため、位置ずれが発生したとしても電極４２の一端部における先端部がパッド部５４と当接しないことが抑制される。   Subsequently, as shown in FIG. 3B, a mounted member 50 having the pad portion 54 and the like is prepared. Then, the second main surface 11b of the main substrate 11 and the one surface 51a of the mounting substrate 51 of the electronic component 10 face each other, and one end of the electrode 42 and the pad portion 54 abut on the mounting member 50. A laminated body 70 is configured by laminating the electronic components 10. At this time, as described above, since the one end portion of the electrode 42 is protruded from the main surface insulating film 30, the electrode 42 and the pad portion 54 are formed by the main surface insulating film 30 contacting the one surface insulating film 53. It is suppressed that it does not contact. Further, since the planar shape of the pad portion 54 is larger than the planar shape of the electrode 42 when viewed from the stacking direction, the electrode 42 and the pad portion 54 have a tip at one end of the electrode 42 even if misalignment occurs. The portion is prevented from coming into contact with the pad portion 54.

その後、図３（ｃ）に示されるように、電極４２とパッド部５４との界面に孔部４０を閉塞する蓋部６０を形成しつつ、蓋部６０を介して電極４２とパッド部５４とを電気的、機械的に接続することにより、図１に示す電子装置が製造される。   Thereafter, as shown in FIG. 3C, while forming a cover 60 for closing the hole 40 at the interface between the electrode 42 and the pad 54, the electrode 42 and the pad 54 are formed via the cover 60. Are electrically and mechanically connected to produce the electronic device shown in FIG.

具体的には、この工程では、電極４２を構成する金属材料（すなわち、はんだ）における融点未満の温度に維持しつつ、積層方向に積層体７０を加圧する。これにより、電極４２を構成する金属原子とパッド部５４を構成する金属原子とが固相拡散されて蓋部６０が形成され、蓋部６０を介して電極４２とパッド部５４とが電気的、機械的に接続される。なお、図３（ｃ）の工程では、孔部４０を閉塞する蓋部６０が形成されるように、加圧条件等が調整される。言い換えると、上記各工程では、図３（ｃ）の工程にて孔部４０を閉塞する蓋部６０が形成されるように、電極４２の平面形状や突出量等も調整される。   Specifically, in this step, the laminate 70 is pressurized in the laminating direction while maintaining the temperature below the melting point of the metal material (that is, the solder) constituting the electrode 42. Thereby, the metal atoms constituting the electrode 42 and the metal atoms constituting the pad portion 54 are solid phase diffused to form the lid portion 60, and the electrode 42 and the pad portion 54 are electrically connected via the lid portion 60, Mechanically connected. In the process of FIG. 3C, the pressurizing conditions and the like are adjusted so that the lid 60 that closes the hole 40 is formed. In other words, in each of the above-described steps, the planar shape, the amount of protrusion, and the like of the electrode 42 are also adjusted such that the lid 60 that closes the hole 40 is formed in the step of FIG.

以上説明したように、本実施形態では、孔部４０を閉塞するように蓋部６０が配置され、電極４２とパッド部５４とは蓋部６０を介して電気的、機械的に接続されている。また、蓋部６０は、電極４２よりも融点の高い材料で構成されている。このため、電子装置が電極４２を構成する金属材料の融点以上の温度で使用される場合等において、電極４２が溶融して孔部４０から流出することを抑制でき、電子装置に不具合が発生することを抑制できる。   As described above, in the present embodiment, the lid 60 is disposed so as to close the hole 40, and the electrode 42 and the pad 54 are electrically and mechanically connected via the lid 60. . The lid 60 is made of a material having a melting point higher than that of the electrode 42. Therefore, when the electronic device is used at a temperature equal to or higher than the melting point of the metal material forming the electrode 42, it is possible to suppress melting of the electrode 42 and flowing out from the hole 40, which causes problems in the electronic device. This can be suppressed.

また、本実施形態では、電極４２を構成する金属材料における融点未満の温度で積層体７０を積層方向に加圧することにより、蓋部６０を形成しつつ、当該蓋部６０を介して電極４２とパッド部５４とを電気的、機械的に接続している。つまり、蓋部６０を形成する工程と、電極４２とパッド部５４とを電気的、機械的に接続する工程とを同一の工程にて行っている。このため、製造工程数が増加することを抑制することができる。   Further, in the present embodiment, by pressing the stacked body 70 in the stacking direction at a temperature less than the melting point of the metal material forming the electrode 42, the lid portion 60 is formed, and the electrode 42 and the lid portion 60 are formed. The pad portion 54 is electrically and mechanically connected. That is, the step of forming the lid portion 60 and the step of electrically and mechanically connecting the electrode 42 and the pad portion 54 are performed in the same step. For this reason, it can suppress that the number of manufacturing processes increases.

さらに、蓋部６０を形成する際、電極４２を構成する金属材料における融点未満の温度に維持しているため、蓋部６０を形成する際に電極４２を構成する金属材料が溶融し、蓋部６０が形成されないという不具合が発生することを抑制できる。   Furthermore, when forming the lid 60, the temperature is maintained at a temperature lower than the melting point of the metal material that constitutes the electrode 42, so when forming the lid 60, the metal material that constitutes the electrode 42 melts, and the lid It can suppress that the malfunction that 60 is not formed generate | occur | produces.

また、被実装部材５０上に電子部品１０を搭載する前に、主面絶縁膜３０の厚さを薄くし、電極４２の一部を主面絶縁膜３０から突出するようにしている。このため、主面絶縁膜３０が一面絶縁膜５３と当接することにより、電極４２とパッド部５４とが当接しないことを抑制できる。つまり、積層体７０を加圧しても蓋部６０が適切に形成されないという不具合が発生することを抑制できる。   In addition, before the electronic component 10 is mounted on the mounting member 50, the thickness of the main surface insulating film 30 is reduced so that a part of the electrode 42 protrudes from the main surface insulating film 30. For this reason, it can suppress that the electrode 42 and the pad part 54 do not contact | abut by the main surface insulating film 30 contacting the one-surface insulating film 53. FIG. That is, it is possible to suppress the occurrence of the problem that the lid 60 is not properly formed even when the stacked body 70 is pressed.

さらに、電極４２およびパッド部５４は、積層方向から視たとき、電極４２の平面形状がパッド部５４の平面形状より大きくなるようにしている。このため、被実装部材５０に電子部品１０を搭載する際に位置ずれが発生したとしても、電極４２の一端部における先端部がパッド部５４と当接しないことが抑制される。つまり、積層体７０を加圧しても蓋部６０が適切に形成されないという不具合が発生することを抑制できる。   Furthermore, the electrode 42 and the pad portion 54 are configured such that the planar shape of the electrode 42 is larger than the planar shape of the pad portion 54 when viewed from the stacking direction. For this reason, even if a positional deviation occurs when mounting the electronic component 10 on the mounting member 50, it is suppressed that the tip of the one end of the electrode 42 does not contact the pad 54. That is, it is possible to suppress the occurrence of the problem that the lid 60 is not properly formed even if the laminate 70 is pressurized.

（第２実施形態）
第２実施形態について説明する。本実施形態は、第１実施形態に対して、蓋部６０の形成方法を変更したものであり、その他に関しては第１実施形態と同様であるため、説明を省略する。 Second Embodiment
A second embodiment will be described. The present embodiment is the same as the first embodiment except that the method of forming the lid 60 is modified with respect to the first embodiment, and the description thereof is omitted.

まず、本実施形態の電子部品１０について説明する。本実施形態では、図４に示されるように、電子部品１０には、主基板１１の第２主面１１ｂ側に孔部４０を閉塞するように蓋部６０が形成されている。言い換えると、電極４２を孔部４０から露出させないように蓋部６０が形成されている。つまり、電子部品１０には、被実装部材５０に搭載される前に、予め蓋部６０が形成されている。なお、蓋部６０は、上記のように、電極４２より融点が高い金属材料で構成されている。   First, the electronic component 10 of this embodiment will be described. In the present embodiment, as shown in FIG. 4, the electronic component 10 is provided with a lid 60 on the side of the second main surface 11 b of the main substrate 11 so as to close the hole 40. In other words, the lid 60 is formed so as not to expose the electrode 42 from the hole 40. That is, the lid 60 is formed on the electronic component 10 in advance before being mounted on the mounting member 50. In addition, the cover part 60 is comprised with the metal material whose melting | fusing point is higher than the electrode 42 as mentioned above.

そして、電子装置は、図５に示されるように、電子部品１０の電極４２が被実装部材５０に形成されたパッド部５４と電気的、機械的に接続されるように、導電性接着剤等の接合部材８０を介して搭載されることで構成される。   Then, as shown in FIG. 5, the electronic device is electrically and mechanically connected such that the electrode 42 of the electronic component 10 is electrically and mechanically connected to the pad portion 54 formed on the mounting member 50. It is comprised by mounting via the joining member 80 of this.

次に、上記電子部品１０の製造方法、およびこの電子部品１０を被実装部材５０に搭載した電子装置の製造方法について説明する。   Next, a method of manufacturing the electronic component 10 and a method of manufacturing an electronic device in which the electronic component 10 is mounted on the mounting member 50 will be described.

まず、電子部品１０は、上記図２（ａ）〜（ｃ）の工程と同様の工程を行った後、蓋部６０を形成することで製造される。具体的には、図２（ｃ）の工程の後、図６（ａ）に示されるように、電極４２の融点未満の温度で低温スパッタを行うことにより、主基板１１の第２主面１１ｂ側に金属膜６０ａを成膜する。なお、この工程では、電極４２を構成する金属材料の融点より高い融点を有する金属膜６０ａが成膜される。例えば、金属膜６０ａとして、Ｎｉ膜、ＴｉＷ膜、Ｔｉ膜、Ｃｕ膜等のいずれか１つの金属膜、またはこれらの金属膜が複数積層される。   First, the electronic component 10 is manufactured by forming the lid portion 60 after performing the same steps as the steps of FIGS. Specifically, after the process of FIG. 2C, as shown in FIG. 6A, low temperature sputtering is performed at a temperature lower than the melting point of the electrode 42 to form the second main surface 11b of the main substrate 11 A metal film 60a is formed on the side. In this step, a metal film 60a having a melting point higher than the melting point of the metal material constituting the electrode 42 is formed. For example, as the metal film 60a, any one metal film such as a Ni film, a TiW film, a Ti film, a Cu film or the like, or a plurality of these metal films are stacked.

続いて、図６（ｂ）に示されるように、金属膜６０ａをパターニングして孔部４０を閉塞する蓋部６０を形成することにより、上記図４に示す電子部品１０が製造される。   Subsequently, as shown in FIG. 6B, the metal film 60a is patterned to form a lid 60 for closing the hole 40, whereby the electronic component 10 shown in FIG. 4 is manufactured.

その後、上記被実装部材５０を用意し、被実装部材５０のパッド部５４と電子部品１０の電極４２とを導電性接着剤等の接合部材８０を介して電気的、機械的に接続することにより、上記図５に示す電子装置が製造される。なお、この工程では、電子部品１０には予め蓋部６０が形成されているため、蓋部６０の融点より低い温度であれば電極４２が溶融したとしても孔部４０から流出することはない。   Thereafter, the mounting member 50 is prepared, and the pad portion 54 of the mounting member 50 and the electrode 42 of the electronic component 10 are electrically and mechanically connected via the bonding member 80 such as a conductive adhesive. The electronic device shown in FIG. 5 is manufactured. In this step, since the lid 60 is formed on the electronic component 10 in advance, if the temperature is lower than the melting point of the lid 60, it does not flow out of the hole 40 even if the electrode 42 is melted.

以上説明したように、電子部品１０に孔部４０を閉塞する蓋部６０を予め形成するようにしても、電極４２が溶融して孔部４０から流出することを抑制でき、上記第１実施形態と同様の効果を得ることができる。   As described above, even if the lid 60 for closing the hole 40 is formed in advance in the electronic component 10, the electrode 42 can be prevented from melting and flowing out from the hole 40, and the first embodiment The same effect can be obtained.

（他の実施形態）
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。 (Other embodiments)
The present invention is not limited to the above-described embodiment, and appropriate modifications can be made within the scope of the claims.

例えば、上記各実施形態において、積層方向から視たとき、パッド部５４の平面形状と電極４２の平面形状とが同一であってもよい。このような構成としても、孔部４０が蓋部６０にて閉塞されることにより、上記各実施形態と同様の効果を得ることができる。   For example, in each of the embodiments described above, the planar shape of the pad portion 54 and the planar shape of the electrode 42 may be the same when viewed from the stacking direction. Even in such a configuration, the hole 40 is closed by the lid 60, so that the same effects as those of the above embodiments can be obtained.

また、上記第１実施形態において、図３（ａ）において、主面絶縁膜３０を薄くする工程を行わず、図２（ｃ）の工程まで行ったものを被実装部材５０に搭載してもよい。   Further, in the first embodiment, even if the step of reducing the thickness of the main surface insulating film 30 is not performed in FIG. 3A and the step of performing the step of FIG. 2C is mounted on the mounting member 50. Good.

１０ 電子部品
１１ 基板
１２ 構成部材
１１ａ 第１主面
１１ｂ 第２主面
４１ 孔部
４２ 電極
５０ 被実装部材
５１ 被実装基板
５１ａ 一面
６０ 蓋部
DESCRIPTION OF SYMBOLS 10 Electronic component 11 Board | substrate 12 Structural member 11a 1st main surface 11b 2nd main surface 41 hole part 42 electrode 50 mounted member 51 mounted substrate 51a whole surface 60 cover part

Claims (6)

電極（４２）を有する電子部品（１０）と、前記電極と電気的に接続されるパッド部（５４）が形成された被実装部材（５０）とを備える電子装置において、
前記電子部品は、第１主面（１１ａ）および前記第１主面と反対側の第２主面（１１ｂ）を有する主基板（１１）を備える構成部材（１２）と、前記構成部材に形成された、前記主基板の第２主面側が開口部とされていると共に前記第１主面側が底部とされた孔部（４０）に配置され、金属材料で構成されている前記電極と、を備え、
前記被実装部材は、前記パッド部が前記主基板の第２主面と対向する一面（５１ａ）側に形成された被実装基板（５１）を有し、
前記電極と前記パッド部との間には、前記孔部における開口部を閉塞すると共に前記電極と電気的に接続され、かつ前記電極を構成する金属材料よりも融点の高い金属材料で構成された蓋部（６０）が形成され、
前記電極と前記パッド部とは、前記蓋部を介して電気的に接続されており、
前記蓋部は、前記電極を構成する金属原子と、前記パッド部を構成する金属原子とが固相拡散することで構成された合金層である電子装置。 An electronic device comprising: an electronic component (10) having an electrode (42); and a mounted member (50) having a pad portion (54) electrically connected to the electrode.
The electronic component is formed on a component (12) including a main substrate (11) having a first main surface (11a) and a second main surface (11b) opposite to the first main surface, and the component And the electrode, which is disposed in the hole (40) having the opening on the second main surface side of the main substrate and the bottom on the first main surface side, and made of a metal material Prepared,
The mounting member has a mounting substrate (51) formed on the side (51a) where the pad portion faces the second main surface of the main substrate,
Between the electrode and the pad portion, the opening portion in the hole portion is closed and electrically connected to the electrode, and is composed of a metal material having a higher melting point than the metal material constituting the electrode. A lid (60) is formed;
The electrode and the pad portion are electrically connected via the lid portion ,
The electronic device , wherein the lid portion is an alloy layer formed by solid phase diffusion of metal atoms constituting the electrode and metal atoms constituting the pad portion . 前記電極は、はんだで構成されている請求項１に記載の電子装置。 The electronic device according to claim 1 , wherein the electrode is made of solder. 電極（４２）を有する電子部品（１０）と、前記電極と電気的に接続されるパッド部（５４）が形成された被実装部材（５０）とを備える電子装置の製造方法において、
第１主面（１１ａ）および前記第１主面と反対側の第２主面（１１ｂ）を有する主基板（１１）を備える構成部材（１２）を用意することと、
前記構成部材に対し、前記主基板の第２主面側が開口部となると共に前記主基板の第１主面側が底部となる孔部（４０）を形成することと、
前記孔部に溶融金属を充填し、当該溶融金属を冷却することで前記孔部に前記電極を形成することと、
一面（５１ａ）を有し、当該一面側に前記パッド部が形成された被実装基板（５１）を有する前記被実装部材を用意することと、
前記電極と前記パッド部とが電気的に接続されるように、前記被実装部材上に前記電子部品を搭載することと、を行い、
前記被実装部材に前記電子部品を搭載することでは、前記電極のうちの前記主基板の第２主面側から露出する部分と前記パッド部とが当接するように、前記被実装部材上に前記電子部品を搭載して積層体（７０）を構成することと、前記電極を構成する金属材料の融点未満の温度に維持しつつ、前記被実装部材と前記電子部品との積層方向に前記積層体を加圧することにより、前記電極を構成する金属原子と前記パッド部を構成する金属原子とを固相拡散させて前記孔部における前記第２主面側の開口部を閉塞する蓋部（６０）を形成しつつ、当該蓋部を介して前記電極と前記パッド部とを電気的、機械的に接続することを行う電子装置の製造方法。 A method of manufacturing an electronic device, comprising: an electronic component (10) having an electrode (42); and a mounted member (50) on which a pad portion (54) electrically connected to the electrode is formed.
Preparing a component (12) comprising a main substrate (11) having a first main surface (11a) and a second main surface (11b) opposite to the first main surface;
Forming a hole (40) in which the second main surface side of the main substrate is an opening while the first main surface side of the main substrate is a bottom in the component member;
Filling the hole with molten metal and cooling the molten metal to form the electrode in the hole;
Preparing the mounting member having the one surface (51a) and the mounting substrate (51) having the pad portion formed on the one surface side;
Mounting the electronic component on the mounting member such that the electrode and the pad portion are electrically connected;
When the electronic component is mounted on the mounted member, the portion of the electrode exposed from the second main surface side of the main substrate and the pad portion are in contact with each other on the mounted member. An electronic component is mounted to constitute a laminate (70), and the laminate in the lamination direction of the mounting member and the electronic component while maintaining the temperature below the melting point of the metal material constituting the electrode The lid (60) closes the opening on the second main surface side of the hole by solid-phase diffusing the metal atoms constituting the electrode and the metal atoms constituting the pad by pressurizing A method of manufacturing an electronic device, wherein the electrode and the pad portion are electrically and mechanically connected via the lid portion while forming 前記電極を形成すること、および前記被実装部材を用意することでは、前記被実装部材上に前記電子部品を搭載することの際、前記積層方向から視たとき、前記パッド部の平面形状が前記電極の平面形状より大きくなるように、前記パッド部および前記電極を形成する請求項３に記載の電子装置の製造方法。 In forming the electrode and preparing the mounting member, when the electronic component is mounted on the mounting member, the planar shape of the pad portion is the above when viewed from the stacking direction. The method for manufacturing an electronic device according to claim 3 , wherein the pad portion and the electrode are formed so as to be larger than a planar shape of the electrode. 前記孔部を形成することの後であって、前記電極を形成することの前に、前記主基板の第２主面側に絶縁膜（３０）を形成することを行い、
前記電極を形成することの後であって、前記被実装部材上に前記電子部品を搭載することの前に、前記絶縁膜を薄くすることにより、前記電極の一部を前記絶縁膜から突出させることを行う請求項３または４に記載の電子装置の製造方法。 Forming an insulating film (30) on the second main surface side of the main substrate after forming the hole and before forming the electrode;
After forming the electrode, and before mounting the electronic component on the mounting member, the insulating film is made thin so that a part of the electrode protrudes from the insulating film. The manufacturing method of the electronic device of Claim 3 or 4 which does. 前記孔部に前記電極を形成することでは、はんだを溶融した溶融金属を充填する請求項３ないし５のいずれか１つに記載の電子装置の製造方法。 The method of manufacturing an electronic device according to any one of claims 3 to 5 , wherein in forming the electrode in the hole portion, a molten metal obtained by melting a solder is filled.
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