JP6530401B2 - 窒化ケイ素の選択的な除去のためのcmp組成物及び方法 - Google Patents
窒化ケイ素の選択的な除去のためのcmp組成物及び方法 Download PDFInfo
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- JP6530401B2 JP6530401B2 JP2016536711A JP2016536711A JP6530401B2 JP 6530401 B2 JP6530401 B2 JP 6530401B2 JP 2016536711 A JP2016536711 A JP 2016536711A JP 2016536711 A JP2016536711 A JP 2016536711A JP 6530401 B2 JP6530401 B2 JP 6530401B2
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- cationic polymer
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- polishing
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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Description
好ましくは、供給され又は販売される研削剤(例えば、コロイド状セリア)は、組成物中に0.1〜2質量%(例えば0.4〜2質量%)の濃度で存在する。CMP組成物のカチオン性ポリマーは、好ましくは20〜500ppm(例えば100〜500ppm)の濃度でCMP組成物中に存在する。任意選択的に、カチオン性界面活性剤等の他のカチオン性材料を上記と同様にスラリー中に含めることができる。幾つかの好ましい実施態様において、この側面におけるCMP組成物は3若しくは3.1より高いpH(例えば3.2〜9.5)を有し、又は幾つかの場合において、塩基性pH(好ましくは約pH7.1〜9.5)を有する。
本例は、異なる開始スラリーpH値を有し、水中の0.4質量%のコロイド状セリア(60nm平均一次粒径)及び47ppmのポリ(2‐ビニル‐N‐メチルピリジニウムクロライド)を含むスラリーのパッド表面におけるpHに対する窒化物除去の効果を示す。窒化ケイ素ブランケットウェハーは、DOW IC1010パッドを用い、Applied Materials MIRRAポリッシャー上で100rpmのプラテン速度、85rpmのキャリア速度、2psiの下向きの力、及び150mL/分のスラリー流速において、研磨時間60秒にて研磨された。当初のスラリーpHの値、観察された除去速度(RR)、及びパッド表面におけるpHを表1に記録する。表1中のデータから明らかであるように、3.2〜4.5の当初のpH値を有する酸性スラリーは、800Å/分より大きい除去速度を与え、最終的にパッド表面において8.8〜9.3の範囲のpHを与えた。当初のpHが3.05であるスラリーは、わずか43Å/分の窒化物除去速度を与え、パッド表面におけるpHは酸性のままであった。
本例は、パターン化されたウェハー上の酸化物に対して窒化物を除去するための本開示に記載のペンダント4級化窒素‐ヘテロアリール基を有するカチオン性ポリマーを含む塩基性CMPスラリーの選択性を示す。
本例は、パターン化されたウェハー上の酸化物に対して窒化物の除去に関するペンダント4級化窒素‐ヘテロアリール基を有するカチオン性ポリマーを含む酸性CMPスラリーの選択性をさらに示す。
本例は、パターン化されたウェハー上の酸化物に対して窒化物の除去に関するペンダント4級化イミダゾール基を有するカチオン性ポリマーを含むCMPスラリーの選択性を示す。
本例は、非4級化ポリ(4‐ビニルピリジン)ポリマーを含むCMPスラリーを使用するパターンウェハー窒化物/酸化物研磨選択性の不足を示す。
本例は、4級化窒素‐ヘテロアリ―ル基で官能基化されていない4級アミノカチオン性ポリマーを含むCMPスラリーが、所望の窒化物除去の選択性を与えないことを示す。
Claims (18)
- 窒化ケイ素及び酸化ケイ素を含む基材から酸化ケイ素に対して窒化ケイ素を選択的に除去する化学機械研磨(CMP)方法であって、方法が、CMP組成物により基材の表面を摩耗させて、そこから少なくとも幾らかの窒化ケイ素を除去することを含み、CMP組成物がペンダント4級化窒素‐ヘテロアリール部分を有するカチオン性ポリマーを含む水性キャリア中に懸濁した粒状研削剤を含み、組成物のpHが7.1〜9.5であり、カチオン性ポリマーが、ポリマーの少なくとも一部が研削剤粒子の表面に吸着するのに十分な濃度で存在することにより、塩基性pHにおいて粒状研削剤の粒子の表面上に少なくとも+20mVのゼータ電位を維持する方法。
- 粒状研削剤が、コロイド状セリアを含む、請求項1に記載の方法。
- 粒状研削剤の平均粒径が10〜200nmである、請求項1に記載の方法。
- 研削剤が0.1〜0.5質量パーセント(質量%)の濃度でCMP組成物中に存在し、カチオン性ポリマーが100万当たりの20〜100部(20〜100ppm)の濃度でCMP組成物中に存在する、請求項1に記載の方法。
- カチオン性ポリマーが、式‐CH2CHR‐(式中、Rは4級化窒素ヘテロアリール部分である)の複数の繰り返し単位を含む、請求項1に記載の方法。
- カチオン性ポリマーが、4級化ポリ(ビニルピリジン)、4級化ポリ(ビニルイミダゾール)及びこれらの組み合わせからなる群より選択される、請求項1に記載の方法。
- カチオン性ポリマーが、ポリ(ビニル‐N‐メチルピリジニウム)ホモポリマー、ポリ(N1‐ビニル‐N3‐メチルイミダゾリウム)ホモポリマー、又はこれらの組み合わせを含む、請求項1に記載の方法。
- カチオン性ポリマーが、ハロゲン化物、ナイトレート、及びメチルサルフェートからなる群より選択される1つ又はそれより多くのカウンターイオンを含む、請求項1に記載の方法。
- 摩耗が、CMP研磨装置において研磨パッドと連動して実施される、請求項1に記載の方法。
- 窒化ケイ素及び酸化ケイ素を含む基材から酸化ケイ素に対して窒化ケイ素を選択的に除去するのに好適な化学機械研磨(CMP)組成物であって、組成物が、ペンダント4級化窒素‐ヘテロアリール部分を有するカチオン性ポリマーを含み、組成物のpHが7.1〜9.5であり、カチオン性ポリマーが、ポリマーの少なくとも一部が研削剤粒子の表面に吸着するのに十分な濃度で存在することにより、塩基性pHにおいて粒状研削剤の粒子の表面上に少なくとも+20mVのゼータ電位を維持している、CMP組成物。
- 粒状研削剤が、コロイド状セリアを含む、請求項10に記載のCMP組成物。
- 粒状研削材の平均粒径が、10〜200nmである、請求項10に記載のCMP組成物。
- 粒状研削剤が、0.1〜2質量%の濃度で組成物中に存在する、請求項10に記載のCMP組成物。
- カチオン性ポリマーが、20〜500ppmの濃度で組成物中に存在する、請求項10に記載のCMP組成物。
- カチオン性ポリマーが、式‐CH2CHR‐(式中、Rは4級化窒素ヘテロアリール部分である)の複数の繰り返し単位を含む、請求項10に記載のCMP組成物。
- カチオン性ポリマーが、4級化ポリ(ビニルピリジン)、4級化ポリ(ビニルイミダゾール)、及びこれらの組み合わせからなる群より選択される、請求項10に記載のCMP組成物。
- カチオン性ポリマーが、ポリ(ビニル‐N‐メチルピリジニウム)ホモポリマー、ポリ(N1‐ビニル‐N3‐メチルイミダゾリウム)ホモポリマー、又はこれらの組み合わせを含む、請求項10に記載のCMP組成物。
- カチオン性ポリマーが、ハロゲン化物、ナイトレート、及びメチルサルフェートからなる群より選択される1つ又はそれより多くのカウンターイオンを含む、請求項10に記載のCMP組成物。
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KR101827366B1 (ko) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
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