JP6518024B1 - 静電チャック及びその製法 - Google Patents
静電チャック及びその製法 Download PDFInfo
- Publication number
- JP6518024B1 JP6518024B1 JP2019508281A JP2019508281A JP6518024B1 JP 6518024 B1 JP6518024 B1 JP 6518024B1 JP 2019508281 A JP2019508281 A JP 2019508281A JP 2019508281 A JP2019508281 A JP 2019508281A JP 6518024 B1 JP6518024 B1 JP 6518024B1
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- wafer
- electrostatic chuck
- ceramic member
- focus ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
円形表面であるウエハ載置面の外側に前記ウエハ載置面と比べて低位の環状段差面を有し、クーロン力を発揮可能な体積抵抗率を有する円板状の第1セラミック部材と、
前記第1セラミック部材の内部のうち前記ウエハ載置面に対向する位置に埋設された第1電極と、
前記第1セラミック部材の前記環状段差面の上に前記第1電極とは独立して設けられた第2電極と、
前記第2電極が設けられた前記環状段差面を被覆し、ジョンソン・ラーベック力を発揮可能な体積抵抗率を有する環状の第2セラミック部材と、
を備え、
前記第2セラミック部材の上面はフォーカスリングを載置するためのフォーカスリング載置面である、
ものである。
(a)前記第1電極が埋設された前記第1セラミック部材を用意する工程と、
(b)前記第1セラミック部材の前記環状段差面の上に前記第2電極を印刷又はコーティングによって形成する工程と、
(c)前記第2電極が形成された前記環状段差面の上に前記第2セラミック部材をコーティング又は溶射によって形成する工程と、
を含む。
Claims (8)
- 円形表面であるウエハ載置面の外側に前記ウエハ載置面と比べて低位の環状段差面を有し、クーロン力を発揮可能な体積抵抗率を有する円板状の第1セラミック部材と、
前記第1セラミック部材の内部のうち前記ウエハ載置面に対向する位置に埋設された第1電極と、
前記第1セラミック部材の前記環状段差面の上に前記第1電極とは独立して設けられた第2電極と、
前記第2電極が設けられた前記環状段差面を被覆し、ジョンソン・ラーベック力を発揮可能な体積抵抗率を有する環状の第2セラミック部材と、
を備え、
前記第2セラミック部材の上面はフォーカスリングを載置するためのフォーカスリング載置面である、
静電チャック。 - 前記第2セラミック部材は、コーティング又は溶射によって形成されたものである、
請求項1に記載の静電チャック。 - 前記第1セラミック部材の体積抵抗率は、使用温度において1×1015Ωcm以上であり、
前記第2セラミック部材の体積抵抗率は、使用温度において1×108Ωcm以上1×1013Ωcm以下である、
請求項1又は2に記載の静電チャック。 - 前記第2セラミック部材は、周期表4族元素がドープされたセラミックで形成されている、
請求項1〜3のいずれか1項に記載の静電チャック。 - 前記第2セラミック部材の厚みばらつきは、0.5mm以下である、
請求項1〜4のいずれか1項に記載の静電チャック。 - 前記第2電極は、双極電極である、
請求項1〜5のいずれか1項に記載の静電チャック。 - 前記第1セラミック部材の前記環状段差面は、断面U字状の環状凹溝を有し、
前記第2電極は、前記環状凹溝の底面に設けられ、
前記第2セラミック部材は、前記第2電極が設けられた前記環状凹溝の底面を被覆し、前記第2セラミック部材の表面が前記環状段差面の上面と面一になっている、
請求項1〜6のいずれか1項に記載の静電チャック。 - 請求項1〜7のいずれか1項に記載の静電チャックを製造する製法であって、
(a)前記第1電極が埋設された前記第1セラミック部材を用意する工程と、
(b)前記第1セラミック部材の前記環状段差面の上に前記第2電極を印刷又はコーティングによって形成する工程と、
(c)前記第2電極が形成された前記環状段差面の上に前記第2セラミック部材をコーティング又は溶射によって形成する工程と、
を含む、静電チャックの製法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762578613P | 2017-10-30 | 2017-10-30 | |
US62/578,613 | 2017-10-30 | ||
PCT/JP2018/039939 WO2019087977A1 (ja) | 2017-10-30 | 2018-10-26 | 静電チャック及びその製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6518024B1 true JP6518024B1 (ja) | 2019-05-22 |
JPWO2019087977A1 JPWO2019087977A1 (ja) | 2019-11-14 |
Family
ID=66331797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019508281A Active JP6518024B1 (ja) | 2017-10-30 | 2018-10-26 | 静電チャック及びその製法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11282734B2 (ja) |
JP (1) | JP6518024B1 (ja) |
KR (1) | KR102514231B1 (ja) |
CN (1) | CN110770891B (ja) |
TW (1) | TWI752277B (ja) |
WO (1) | WO2019087977A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
JP7462626B2 (ja) * | 2018-10-26 | 2024-04-05 | アプライド マテリアルズ インコーポレイテッド | パターニング応用のための高密度炭素膜 |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
KR20210107716A (ko) | 2019-01-22 | 2021-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
JP7376594B2 (ja) * | 2019-07-01 | 2023-11-08 | 日本碍子株式会社 | シャフト付きセラミックヒータ |
CN113994462A (zh) * | 2019-09-06 | 2022-01-28 | Toto株式会社 | 静电吸盘 |
KR20230004790A (ko) * | 2020-04-29 | 2023-01-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 균일성 개선을 위한 히터 커버 플레이트 |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
JP7438070B2 (ja) * | 2020-09-11 | 2024-02-26 | 新光電気工業株式会社 | 静電チャック、基板固定装置及び基板固定装置の製造方法 |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
JP7496343B2 (ja) | 2021-11-08 | 2024-06-06 | 日本碍子株式会社 | ウエハ載置台 |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033376A (ja) * | 2000-07-17 | 2002-01-31 | Tokyo Electron Ltd | 被処理体の載置装置 |
JP2004200353A (ja) * | 2002-12-18 | 2004-07-15 | Tokyo Electron Ltd | 処理方法及び処理装置 |
JP2005064460A (ja) * | 2003-04-24 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理装置、フォーカスリング及び被処理体の載置装置 |
JP2011009351A (ja) * | 2009-06-24 | 2011-01-13 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2011210958A (ja) * | 2010-03-30 | 2011-10-20 | Tokyo Electron Ltd | プラズマ処理装置及び半導体装置の製造方法 |
JP2014022518A (ja) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | 下部電極、及びプラズマ処理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4099053B2 (ja) * | 2002-12-20 | 2008-06-11 | 京セラ株式会社 | 静電チャックの製造方法 |
JP2004296911A (ja) * | 2003-03-27 | 2004-10-21 | Kyocera Corp | 静電チャック |
US20040261946A1 (en) | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
JP5492578B2 (ja) | 2003-04-24 | 2014-05-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2005072321A (ja) * | 2003-08-26 | 2005-03-17 | Kyocera Corp | ウェハ支持部材とその製造方法 |
JP2005150370A (ja) * | 2003-11-14 | 2005-06-09 | Kyocera Corp | 静電チャック |
JP2005340442A (ja) * | 2004-05-26 | 2005-12-08 | Kyocera Corp | 静電チャック及びその製造方法 |
JP2006060040A (ja) * | 2004-08-20 | 2006-03-02 | Rasa Ind Ltd | 静電チャックプレート及びその製造方法 |
JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6285620B2 (ja) * | 2011-08-26 | 2018-02-28 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
JP6080571B2 (ja) * | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP5654083B2 (ja) * | 2013-05-09 | 2015-01-14 | 東京エレクトロン株式会社 | 静電チャック及び基板処理装置 |
JP6030045B2 (ja) * | 2013-12-03 | 2016-11-24 | 日本碍子株式会社 | セラミックヒータ及びその製法 |
JP6346855B2 (ja) * | 2014-12-25 | 2018-06-20 | 東京エレクトロン株式会社 | 静電吸着方法及び基板処理装置 |
JP6924618B2 (ja) * | 2017-05-30 | 2021-08-25 | 東京エレクトロン株式会社 | 静電チャック及びプラズマ処理装置 |
CN109216144B (zh) * | 2017-07-03 | 2021-08-06 | 中微半导体设备(上海)股份有限公司 | 一种具有低频射频功率分布调节功能的等离子反应器 |
CN109994355B (zh) * | 2017-12-29 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | 一种具有低频射频功率分布调节功能的等离子反应器 |
-
2018
- 2018-10-26 CN CN201880041614.0A patent/CN110770891B/zh active Active
- 2018-10-26 JP JP2019508281A patent/JP6518024B1/ja active Active
- 2018-10-26 WO PCT/JP2018/039939 patent/WO2019087977A1/ja active Application Filing
- 2018-10-26 KR KR1020197037494A patent/KR102514231B1/ko active IP Right Grant
- 2018-10-29 TW TW107138153A patent/TWI752277B/zh active
-
2019
- 2019-12-17 US US16/717,106 patent/US11282734B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033376A (ja) * | 2000-07-17 | 2002-01-31 | Tokyo Electron Ltd | 被処理体の載置装置 |
JP2004200353A (ja) * | 2002-12-18 | 2004-07-15 | Tokyo Electron Ltd | 処理方法及び処理装置 |
JP2005064460A (ja) * | 2003-04-24 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理装置、フォーカスリング及び被処理体の載置装置 |
JP2011009351A (ja) * | 2009-06-24 | 2011-01-13 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2011210958A (ja) * | 2010-03-30 | 2011-10-20 | Tokyo Electron Ltd | プラズマ処理装置及び半導体装置の製造方法 |
JP2014022518A (ja) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | 下部電極、及びプラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN110770891A (zh) | 2020-02-07 |
KR102514231B1 (ko) | 2023-03-24 |
TW201923965A (zh) | 2019-06-16 |
WO2019087977A1 (ja) | 2019-05-09 |
JPWO2019087977A1 (ja) | 2019-11-14 |
CN110770891B (zh) | 2023-04-07 |
US11282734B2 (en) | 2022-03-22 |
KR20200070159A (ko) | 2020-06-17 |
US20200126837A1 (en) | 2020-04-23 |
TWI752277B (zh) | 2022-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6518024B1 (ja) | 静電チャック及びその製法 | |
JP6894000B2 (ja) | 静電チャックアセンブリ及び静電チャック | |
KR102173156B1 (ko) | 플라즈마 프로세싱 챔버 내의 엘라스토머 시일의 수명을 연장시키는 크기로 형성된 에지 링 | |
US8295026B2 (en) | Electrostatic chuck and substrate processing apparatus having same | |
US20230340668A1 (en) | Wafer holder | |
JP6530878B1 (ja) | ウエハ載置台及びその製法 | |
CN111095501B (zh) | 载置台和等离子体处理装置 | |
US20220122875A1 (en) | High temperature bipolar electrostatic chuck | |
CN115148653A (zh) | 一种静电吸盘及等离子体反应装置 | |
JP6693808B2 (ja) | 電極内蔵型載置台構造 | |
JP4495687B2 (ja) | 静電チャック | |
WO2018230232A1 (ja) | ウエハ加熱ヒータ及び半導体製造装置 | |
CN110800096A (zh) | 静电卡盘 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190214 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20190214 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20190402 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190409 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190418 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6518024 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |