JP6502672B2 - Alloy for seed layer of Ni-Cu based magnetic recording medium, sputtering target material and magnetic recording medium - Google Patents
Alloy for seed layer of Ni-Cu based magnetic recording medium, sputtering target material and magnetic recording medium Download PDFInfo
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- JP6502672B2 JP6502672B2 JP2015002755A JP2015002755A JP6502672B2 JP 6502672 B2 JP6502672 B2 JP 6502672B2 JP 2015002755 A JP2015002755 A JP 2015002755A JP 2015002755 A JP2015002755 A JP 2015002755A JP 6502672 B2 JP6502672 B2 JP 6502672B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
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Description
本発明は、垂直磁気記録媒体におけるシード層として用いるNi−Cu系磁気記録媒体
のシード層用合金およびスパッタリングターゲット材並びに磁気記録媒体に関するものである。
The present invention relates to an alloy for a seed layer of a Ni—Cu based magnetic recording medium, a sputtering target material, and a magnetic recording medium, which are used as a seed layer in a perpendicular magnetic recording medium.
近年、垂直磁気記録の進歩は著しく、ドライブの大容量化のために、磁気記録媒体の高
記録密度化が進められており、従来普及していた面内磁気記録媒体により、さらに高記録密度が実現できる、垂直磁気記録方式が実用化されている。ここで、垂直磁気記録方式とは、垂直磁気記録媒体の磁性膜中の媒体面に対して磁化容易軸が垂直方向に配向するように形成したものであり、高記録密度に適した方法である。
In recent years, the progress of perpendicular magnetic recording has been remarkable, and in order to increase the capacity of the drive, the recording density of magnetic recording media has been increased, and the in-plane magnetic recording media that have been widely used in the past further increase the recording density. A perpendicular magnetic recording system that can be realized has been put to practical use. Here, the perpendicular magnetic recording method is formed in such a manner that the axis of easy magnetization is oriented in the perpendicular direction to the medium surface in the magnetic film of the perpendicular magnetic recording medium, and is a method suitable for high recording density. .
そして、垂直磁気記録方式においては、記録密度を高めた磁気記録膜層と軟磁性膜層と
を有する記録媒体が開発されており、このような媒体構造では、軟磁性層と磁気記録層の間にシード層や下地膜層が製膜された記録媒体が開発されている。垂直磁気記録方式用のシード層には、例えば特開2009−155722号公報(特許文献1)に開示されているように、Ni−W系の合金が提案されている。
And, in the perpendicular magnetic recording system, a recording medium having a magnetic recording film layer and a soft magnetic film layer with increased recording density has been developed, and in such a medium structure, between the soft magnetic layer and the magnetic recording layer Recording media in which a seed layer and an undercoat layer are formed have been developed. As a seed layer for the perpendicular magnetic recording system, for example, as disclosed in JP-A-2009-155722 (Patent Document 1), a Ni-W based alloy is proposed.
ここでシード層に求められる特性の一つは、その名が示すように、シード層の上に形成される層の配向性を制御し、磁気情報を記録する磁性膜の磁化容易軸が媒体面に対して垂直に配向させる為に、シード層自身は単独のfcc構造を有すると共に、媒体面と平行な面が(111)面に配向する事である。また、近年、ハードディスクドライブの磁気記録特性を改善する一つの手法として、シード層に磁性を持たせる方法が検討されるようになってきた。そのため上述のようにシード層用合金として求められる特性を備えると共に、磁性を有するシード層用合金の開発が求められていた。磁性を有するシード層用合金としては、例えば特開2012−128933号公報(特許文献2)に開示されているように、Ni−Fe−Co−M系の合金が提案されている。 Here, one of the characteristics required for the seed layer is, as the name implies, that the orientation of the layer formed on the seed layer is controlled, and the easy axis of the magnetic film for recording the magnetic information is the medium surface The seed layer itself has a single fcc structure and is oriented in the (111) plane in parallel to the medium surface, in order to be oriented perpendicularly to. Also, in recent years, as a method of improving the magnetic recording characteristics of a hard disk drive, a method of making the seed layer magnetic has been considered. Therefore, as described above, development of a seed layer alloy having magnetism as well as characteristics required as a seed layer alloy has been required. As an alloy for a seed layer having magnetism, for example, as disclosed in JP-A-2012-128933 (Patent Document 2), an alloy of a Ni-Fe-Co-M system is proposed.
一方、軟磁性層とシード層の大きな違いとして、軟磁性層ではノイズ低減のためにアモルファスであることが求められるが、シード層ではシード層の上に形成される層の配向を制御する作用が要求されており、非晶質であるアモルファスとは反対に高い結晶性を有することが求められる。これに加えてシード層用合金は、新たな特性として耐食性が求められている。 On the other hand, the soft magnetic layer is required to be amorphous for noise reduction in the soft magnetic layer as a major difference between the soft magnetic layer and the seed layer, but the seed layer has the function of controlling the orientation of the layer formed on the seed layer. It is required to have high crystallinity as opposed to amorphous which is required. In addition to this, the alloy for the seed layer is required to have corrosion resistance as a new characteristic.
上述のような要求を十分達成するために、発明者らは鋭意開発を進めた結果、Cuを添加することで、シード層の耐食性を向上できることを見出し、発明を完成させるに至った。 As a result of the intensive development of the inventors in order to sufficiently achieve the above-mentioned requirements, the inventors have found that the corrosion resistance of the seed layer can be improved by adding Cu, and the invention has been completed.
その発明の要旨とするところは、
(1)Ni−Cu−M合金であって、Cuを1〜50at%、M1元素としてW,Mo,Ta,Cr,V,Nbの1種または2種以上を2〜20at%含有し、残部がNiと不可避的不純物からなることを特徴とする磁気記録媒体のシード層用合金。
(2)Ni−Cu−M合金であって、Cuを10超〜50at%、M1元素としてW,Mo,Ta,Cr,V,Nbの1種または2種以上を2〜20at%およびM2元素としてFeまたはCoを2〜30at%含有し、残部がNiと不可避的不純物からなることを特徴とする磁気記録媒体のシード層用合金。
Where the subject matter of the invention is:
(1) A Ni-Cu-M alloy, containing 1 to 50 at% of Cu, 2 to 20 at% of one or two or more of W, Mo, Ta, Cr, V, Nb as an M1 element, the balance An alloy for a seed layer of a magnetic recording medium, characterized in that the alloy comprises Ni and unavoidable impurities.
(2) A Ni-Cu-M alloy, wherein Cu is more than 10 to 50 at%, and W, Mo, Ta, Cr, V, Nb as M1 element is 2 to 20 at%, and M2 element An alloy for a seed layer of a magnetic recording medium, containing 2 to 30 at% of Fe or Co, and the balance being Ni and unavoidable impurities.
(3)前記(1)または(2)に記載されたNi−Cu−M合金に、さらにM3元素と
してAl,Ga,In,Si,Ge,Sn,Zr,Ti,Hf,B,P,C,Ruの1種または2種以上を1〜10at%含有することを特徴とする磁気記録媒体のシード層用合金。
(4)前記(1)〜(3)のいずれか1に記載の磁気記録媒体のシード層用合金を使用してなるスパッタリングターゲット材。
(5)前記(1)〜(3)のいずれか1に記載のシード層用合金を使用してなる磁気記録媒体にある。
(3) In the Ni-Cu-M alloy described in the above (1) or (2), Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, P, C are further added as M3 elements. And an alloy for a seed layer of a magnetic recording medium, containing 1 to 10 at% of one or more of Ru and Ru.
(4) A sputtering target material formed using the alloy for a seed layer of the magnetic recording medium according to any one of the above (1) to (3).
(5) A magnetic recording medium using the alloy for a seed layer according to any one of the above (1) to (3).
以上述べたように、Ni−M系合金にCuを添加することで、軟磁性下地膜(SUL)の上にある中間層に耐食性を持たせることを可能とした磁気記録媒体のシード層用スパッタリングターゲット材を提供することにある。 As described above, the sputtering of the seed layer for the magnetic recording medium which makes it possible to provide the intermediate layer on the soft magnetic underlayer (SUL) with corrosion resistance by adding Cu to the Ni-M alloy. It is to provide target material.
以下、本発明に係る発明の限定理由を説明する。
Cu:1〜50at%
Ni−M系合金の耐食性を向上させるためにCuを添加した。しかし、1%未満ではそのの効果が十分でなく、50%を超えるとシード層としての性能を発揮できない。
Hereinafter, the reasons for limitation of the invention according to the present invention will be described.
Cu: 1 to 50 at%
Cu was added to improve the corrosion resistance of the Ni-M based alloy. However, if it is less than 1%, its effect is not sufficient, and if it exceeds 50%, the performance as a seed layer can not be exhibited.
シード層用合金としてはfcc単相である事が求められる。Ni−Cu−M合金において、W,Mo,Ta,Cr,V,Nbを以下M1元素と称とすると、このM1元素は、高融点を持つbcc系金属であり、本発明で規定する成分範囲でfccであるNi−Cu合金を添加することにより、そのメカニズムは明確ではないが、シード層に求められる(111)面への配向性を改善させ、かつ結晶粒を微細化させる元素である。このW,Mo,Ta,Cr,V,Nbの1種または2種以上をat%量で、2〜20%とする。しかし、2%未満ではその効果が十分でなく、また、20%を超えると化合物が析出するか、アモルファス化する。シード層用合金としてはfcc単相である事が求められることから、その範囲を2〜20%とする。好ましくは5〜15%とする。 The alloy for the seed layer is required to be fcc single phase. In the Ni-Cu-M alloy, W, Mo, Ta, Cr, V, and Nb are hereinafter referred to as M1 element, this M1 element is a bcc-based metal having a high melting point, and the component range defined in the present invention By adding an fcc Ni-Cu alloy, the mechanism is not clear, but it is an element that improves the orientation to the (111) plane required for the seed layer and refines the crystal grains. One or two or more of W, Mo, Ta, Cr, V, and Nb are contained in an amount of 2% to 20%. However, if it is less than 2%, the effect is not sufficient, and if it exceeds 20%, the compound precipitates or becomes amorphous. Since the alloy for the seed layer is required to be fcc single phase, the range is set to 2 to 20%. Preferably, it is 5 to 15%.
また、(111)面の配向に効果が高いのはW,Moで、望ましくはW,Moの1種ま
たは2種を必須とし、Cr,Ta,V,Nbはこれに添加してもよい。その理由は、Niと高融点bcc金属の組合せで、Mo,WはCrに比べ融点が高く有利である。また、Ta,V,Nb添加はW、Moに比べ、添加する事でアモルファス性を高めることにも作用し、シード層に求められるfcc相形成に不利である。Crは望ましくは5%超え添加した場合に配向性の点で有利となる。
In addition, W and Mo are highly effective in the orientation of the (111) plane, preferably one or two of W and Mo are essential, and Cr, Ta, V, Nb may be added to this. The reason is that the combination of Ni and a high melting point bcc metal, Mo and W have a high melting point and is advantageous compared to Cr. In addition, addition of Ta, V and Nb also acts to enhance the amorphous property by addition as compared with W and Mo, and is disadvantageous to the formation of fcc phase required for the seed layer. Cr is advantageous in terms of orientation when it is desirably added in excess of 5%.
また、FeまたはCoを以下M2元素と称すると、このM2元素のFeまたはCoを2〜30at%としたのは、2at%未満では要求される磁性に達することができないためである。また、FeまたはCoは腐食されやすいため、30%を超えると耐食性が得られないためである。したがって、その範囲を2〜30at%とした。好ましくは、25at%以下、さらに好ましくは20at%以下とする。 Further, when Fe or Co is hereinafter referred to as the M2 element, the reason why Fe or Co of the M2 element is set to 2 to 30 at% is that the required magnetism can not be reached at less than 2 at%. In addition, Fe or Co is easily corroded, so if it exceeds 30%, corrosion resistance can not be obtained. Therefore, the range is set to 2 to 30 at%. Preferably, it is 25 at% or less, more preferably 20 at% or less.
さらに、Al,Ga,In,Si,Ge,Sn,Zr,Ti,Hf,B,P,C,Ru
を以下M3元素と称すると、このM3元素は、(111)面を配向させる元素であり、また、結晶粒を微細化する元素である。このAl,Ga,In,Si,Ge,Sn,Zr,Ti,Hf,B,Cu,P,C,Ruの1種または2種以上をat%量で、1〜10%とする。しかし、10%を超えると化合物が生じたり、アモルファス化したりすることから、その上限を10%とする。好ましくは5%とする。また、M1+M3は好ましくは、25at%以下、さらに好ましくは20at%以下とする。
Furthermore, Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, P, C, Ru
Hereinafter, when the element is referred to as an M3 element, the M3 element is an element that orients the (111) plane, and is an element that refines crystal grains. One or two or more of Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, and Ru are contained in an amount of 1 to 10%. However, if the content exceeds 10%, the compound is formed or is made amorphous, so the upper limit is made 10%. Preferably, it is 5%. Further, M1 + M3 is preferably 25 at% or less, more preferably 20 at% or less.
以下、本発明について、実施例によって具体的に説明する。
通常、垂直磁気記録媒体におけるシード層はその成分と同じ成分のスパッタリングターゲット材をスパッタし、ガラス基板などの上に成膜し得られる。ここでスパッタにより成膜された薄膜は急冷されている。本発明での供試材としては、単ロール式の急冷装置にて作製した急冷薄帯を用いる。これは実際にスパッタにより急冷され成膜された薄膜の、成分による諸特性への影響を、簡易的に液体急冷薄帯により評価したものである。
Hereinafter, the present invention will be specifically described by way of examples.
Usually, the seed layer in the perpendicular magnetic recording medium is obtained by sputtering a sputtering target material having the same component as the component and forming a film on a glass substrate or the like. Here, the thin film formed by sputtering is rapidly cooled. As a test material in the present invention, a quenched ribbon produced by a single roll type quenching apparatus is used. This is a simple evaluation of the influence of the components on the properties of the thin film actually formed by quenching and sputtering by means of a liquid quenching ribbon.
急冷薄帯の作製条件としては、表1の成分に秤量した原料30gを径10、長さ40m
m程度の水冷銅鋳型にて減圧して、Ar中でアーク溶解し、急冷薄帯の溶解母材とした。急冷薄帯の作製条件は、単ロール方式で径15mmの石英管中にて、この溶解母材をセットし、出湯ノズル径を1mmとし、雰囲気気圧61kPa、噴霧差圧69kPa、銅ロール(径300mm)の回転数3000rpm、銅ロールと出湯ノズルのギャップ0.3mmにて出湯した。出湯温度は各溶解母材の溶け落ち直後とした。このようにして作製した急冷薄帯を供試材とし、以下の項目を評価した。
As preparation conditions of the quenching ribbon, 30 g of raw material weighed to the components of Table 1 is 10 in diameter, 40 m in length
The pressure was reduced using a water-cooled copper mold of about m, arc melting was performed in Ar, and a molten base material of a quenched ribbon was obtained. The conditions for producing the quenched ribbon are single roll method, this dissolution base material is set in a quartz tube of diameter 15 mm, the diameter of the outlet nozzle is 1 mm, atmospheric pressure 61 kPa, spray differential pressure 69 kPa, copper roll (diameter 300 mm The hot water was discharged at a rotational speed of 3000 rpm and a gap of 0.3 mm between the copper roll and the hot water discharge nozzle. The temperature of the hot water was immediately after the melting base material melted down. The quenched ribbon thus produced was used as a test material, and the following items were evaluated.
ガラス板に両面テープで供試材を貼り付け、X線回折装置にて回折パターンを得た。こ
のとき、測定面は急冷薄帯の銅ロール接触面となるように供試材を貼り付けた。X線源はCu−α線でスキャンスピード4°/minで測定した。この回折パターンにおいて、fcc構造の回折線のピークのみ得られたものを○、それ以外の回折線のピークが得られたもの、アモルファス化したものについては×とした。
A test material was attached to a glass plate with a double-sided tape, and a diffraction pattern was obtained with an X-ray diffractometer. At this time, the test material was attached so that the measurement surface was the copper roll contact surface of the quenched ribbon. The X-ray source was a Cu-α ray and measured at a scan speed of 4 ° / min. In this diffraction pattern, those obtained only with the peaks of diffraction lines of the fcc structure are marked with ○, those with peaks of other diffraction lines obtained and those that are made amorphous are marked with ×.
急冷薄帯の耐食性の評価として、ガラス板に両面テープで供試材を貼り付け、5%Na
Cl−35℃−16hの塩水噴霧試験を行い、全面発銹:×、一部発銹:△、発銹なし:○として評価した。各評価結果を表1に示す。
As an evaluation of the corrosion resistance of the quenched thin strip, paste the test material with a double-sided tape on a glass plate, 5% Na
A salt spray test at Cl-35 ° C-16 h was performed, and the overall development was evaluated as x, partial development: Δ, and no development: O. Each evaluation result is shown in Table 1.
4〜30はその比較例である。
4-30 are the comparative examples.
表1に示す比較例No.24〜26はいずれもCuを含有しないために耐食性が劣る。比較例No.27、28はいずれもM1>20at%であるため、シード層用合金に求められるfcc単相を保つことができない。比較例No.29、30はCuの含有量が高すぎるためシード層用合金に求められるfcc単相を保つことができない。これに対して本発明であるNo.1〜23はいずれも本発明の条件を満足していることから、fcc構造の回折線のみが見られ、シード層に求められる条件を十分満たしており、かつ耐食性を向上させることがわかる。 Comparative Example No. shown in Table 1 No. 24 to 26 all have poor corrosion resistance because they do not contain Cu. Comparative example No. Since both 27 and 28 have M1> 20 at%, the fcc single phase required for the seed layer alloy can not be maintained. Comparative example No. Since samples 29 and 30 have too high contents of Cu, the fcc single phase required for the alloy for seed layer can not be maintained. On the other hand, the present invention No. Since all of the conditions 1 to 23 satisfy the conditions of the present invention, it can be seen that only the diffraction line of the fcc structure is seen, the conditions required for the seed layer are sufficiently satisfied, and the corrosion resistance is improved.
54〜60はその比較例である。
54 to 60 are comparative examples.
表2に示す比較例No.54〜56はいずれもCuを含有しないために耐食性が劣る。比較例No.57〜60はいずれもCuを含有するが、Cuの含有量が少ないために耐
食性が劣る。これに対して本発明であるNo.31〜53はいずれも本発明の条件を満足していることから、fcc構造の回折線のみが見られ、シード層に求められる条件を十分満たしており、かつ耐食性を向上させることがわかる。
Comparative Example No. shown in Table 2 Since all of 54 to 56 do not contain Cu, the corrosion resistance is inferior. Comparative example No. Although all of 57 to 60 contain Cu, the corrosion resistance is inferior because the content of Cu is small. On the other hand, the present invention No. All of the samples 31 to 53 satisfy the conditions of the present invention, so it can be seen that only the diffraction line of the fcc structure is seen, the conditions required for the seed layer are sufficiently satisfied, and the corrosion resistance is improved.
であり、No.68〜90は請求項3に係る実施例であり、No.91〜97はその比較例である。
表3に示す比較例No.91〜95はいずれもCuを含有するが、Cuの含有量が少な
いために耐食性が劣る。比較例No.96、97はCu含有量が少なく、かつM3>10at%のために、耐食性が劣り、しかもシード層用合金に求められるfcc単相を保つことができない。これに対して、本発明であるNo.61〜90はいずれも本発明の条件を満足していることから、fcc構造の回折線のみが見られ、シード層に求められる条件を十分満たしており、かつ耐食性を向上させることがわかる。
Comparative Example No. shown in Table 3 Each of 91 to 95 contains Cu, but the corrosion resistance is inferior because the content of Cu is small. Comparative example No. 96 and 97 have low Cu content and M3> 10 at%, so they have poor corrosion resistance and can not maintain the fcc single phase required for a seed layer alloy. On the other hand, in the case of No. Since all of the samples 61 to 90 satisfy the conditions of the present invention, it can be seen that only the diffraction line of the fcc structure is seen, the conditions required for the seed layer are sufficiently satisfied, and the corrosion resistance is improved.
次に、実施例にある組成のスパッタリングターゲットを作製し、スパッタ膜で評価した。スパッタリングターゲット材の製造方法の例を示す。実施例No.2、No.11、No.23、No.27、No.34、No.47、No.56、No.63、No.84、No.95の組成になるように秤量した原料を、耐火物坩堝内で加熱溶解した後、Arガスによりアトマイズした。このガスアトマイズ粉末を原料粉末として、炭素鋼製の容器に充填、真空脱気封入した。 Next, the sputtering target of the composition in an Example was produced, and it evaluated by the sputtered film. The example of the manufacturing method of a sputtering target material is shown. Example No. 2, No. 11, No. 23, no. 27, No. 34, no. 47, no. 56, no. 63, no. 84, no. The raw material weighed to have a composition of 95 was heated and dissolved in a refractory crucible, and then atomized with Ar gas. The gas atomized powder was used as a raw material powder, filled in a carbon steel container, and evacuated and sealed.
上記粉末充填ビレットを、HIP成形した。このHIP体を、ワイヤーカット、旋盤加工、平面研磨により、直径180mm、厚さ7mmの円盤状に加工し、スパッタリングターゲットとした。これら10組成についてのスパッタリングターゲット材を用い、ガラス基板上にスパッタ膜を成膜した。急冷薄帯と同様に結晶構造および耐食性を調査したところ、結晶構造および耐食性のいずれも急冷薄帯と同様の結果が得られた。よって急冷薄帯とスパッタ膜の評価は同等であることを確認した。 The powder filled billet was HIP molded. This HIP body was processed into a disk shape having a diameter of 180 mm and a thickness of 7 mm by wire cutting, lathe processing, and planar polishing, and used as a sputtering target. Sputtering films were formed on a glass substrate using sputtering target materials for these 10 compositions. The crystal structure and the corrosion resistance were examined in the same manner as the quenched ribbon, and both the crystal structure and the corrosion resistance gave results similar to the quenched ribbon. Therefore, it was confirmed that the evaluation of the quenched ribbon and the sputtered film was equivalent.
以上述べたように、Ni−M系合金にCuを添加することで、中間層に求められるfcc単相が得られ、かつその(111)面への配向性を改善し、かつ結晶粒を微細化させ、中間層の耐食性を向上させることができる極めて優れた効果を示すものである。
出願人 山陽特殊製鋼株式会社
代理人 弁理士 椎 名 彊
As described above, by adding Cu to the Ni-M alloy, the fcc single phase required for the intermediate layer is obtained, and the orientation to the (111) plane is improved, and the crystal grains are finely divided. It shows an extremely excellent effect that can improve the corrosion resistance of the intermediate layer.
Applicant Sanyo Special Steel Co., Ltd.
Agent Attorney Shiina Atsushi
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JP2015002755A JP6502672B2 (en) | 2015-01-09 | 2015-01-09 | Alloy for seed layer of Ni-Cu based magnetic recording medium, sputtering target material and magnetic recording medium |
PCT/JP2016/050350 WO2016111329A1 (en) | 2015-01-09 | 2016-01-07 | ALLOY FOR SEED LAYER OF Ni-Cu-BASED MAGNETIC RECORDING MEDIUM, SPUTTERING TARGET MATERIAL, AND MAGNETIC RECORDING MEDIUM |
SG11201705571VA SG11201705571VA (en) | 2015-01-09 | 2016-01-07 | ALLOY AND SPUTTERING TARGET MATERIAL FOR SEED LAYER IN Ni-Cu-BASED MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM |
MYPI2017702493A MY186853A (en) | 2015-01-09 | 2016-01-07 | Alloy and sputtering target material for seed layer in ni-cu-based magnetic recording medium, and magnetic recording medium |
CN201680005033.2A CN107251139B (en) | 2015-01-09 | 2016-01-07 | Alloy for seed layer of Ni-Cu magnetic recording medium, sputtering target material, and magnetic recording medium |
TW105100538A TWI746429B (en) | 2015-01-09 | 2016-01-08 | Alloy for seed layer of Ni-Cu series magnetic recording medium, sputtering target material and magnetic recording medium |
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JPH0827931B2 (en) * | 1986-06-27 | 1996-03-21 | ティーディーケイ株式会社 | Magnetic recording media |
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