JP6476000B2 - 半導体装置および半導体モジュール - Google Patents
半導体装置および半導体モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 162
- 239000000523 sample Substances 0.000 claims description 75
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 2
- 238000011156 evaluation Methods 0.000 description 23
- 238000012986 modification Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 239000012212 insulator Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- LRUUNMYPIBZBQH-UHFFFAOYSA-N Methazole Chemical compound O=C1N(C)C(=O)ON1C1=CC=C(Cl)C(Cl)=C1 LRUUNMYPIBZBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
はじめに、実施の形態に係る半導体装置について説明する。半導体装置は、特に、電力変換装置等に使用される高耐圧半導体素子を有する半導体装置が対象とされる。図1に示すように、半導体装置1では、半導体基板3の表面(第1主面)側における領域に、電流を制御する半導体素子が形成された素子形成領域5(活性領域)が配置されている。その素子形成領域5を取り囲むように終端領域7が配置されている。終端領域7は、電気的耐圧を確保するための領域であり、たとえば、ガードリング構造、リサーフ構造またはVLD(Variation of Lateral Doping)構造等が採用されている。
次に、上述した半導体装置の電気的特性の評価について説明する。まず、半導体評価装置について説明する。
図11に示すように、第1変形例に係る半導体装置1では、ゲート電極9は、素子形成領域5の角部の終端領域7と隣り合う位置に配置されている。なお、これ以外の構成については、図1等に示す半導体装置1と同様なので、同一部材には同一符号を付し、必要である場合を除きその説明を繰り返さないこととする。
図12に示すように、第2変形例に係る半導体装置1では、ゲート電極9は、終端領域7から距離を隔てられた、素子形成領域5における中央に配置されている。なお、これ以外の構成については、図1等に示す半導体装置1と同様なので、同一部材には同一符号を付し、必要である場合を除きその説明を繰り返さないこととする。
Claims (11)
- 互いに対向する第1主面および第2主面を有する半導体基板と、
前記半導体基板の前記第1主面の側に規定された素子形成領域と、
前記半導体基板の前記第1主面の側に規定され、前記素子形成領域を取り囲むように配置された終端領域と、
前記素子形成領域に形成され、第1領域および第2領域が配置された第1電極ならびに第2電極を含む第1主面側電極と、
を有し、
前記第1領域と前記第2領域とは、前記第1電極の表面に形成された仕切り部材によって区切られ、
前記第1領域と前記第2領域とは同じ高さにあり、
前記第1領域は、コンタクトプローブの先端部がスライドする方向に沿う長辺と、前記長辺と交差する短辺とを有する矩形状に形成され、
前記第2領域は、前記第1領域の前記長辺側に配置された、半導体装置。 - 前記第2領域の面積は、前記第1領域の面積よりも大きく設定された、請求項1記載の半導体装置。
- 前記第2領域の表面には、認識マークが形成された、請求項1または2に記載の半導体装置。
- 前記第1主面側電極は、前記第1電極として形成されたゲート電極を含む、請求項1〜3のいずれか1項に記載の半導体装置。
- 前記ゲート電極は、前記終端領域から距離を隔てられた、前記素子形成領域における中央に配置された、請求項4記載の半導体装置。
- 前記ゲート電極は、前記素子形成領域における、前記終端領域と隣り合う角部に配置された、請求項4記載の半導体装置。
- 前記ゲート電極は、前記素子形成領域における、前記終端領域と隣り合う位置に配置さ
れた、請求項4記載の半導体装置。 - 前記ゲート電極が、前記第1電極として形成され、
前記第1領域は、前記終端領域側に配置され、
前記第2領域は、前記第1領域を挟んで前記終端領域とは反対側に配置された、請求項4記載の半導体装置。 - 前記第1主面側電極は、前記第2電極として形成されたエミッタ電極を含み、
前記エミッタ電極では、第3領域が複数配置され、
複数の前記第3領域は、第1方向に配置されるとともに、前記第1方向と交差する第2方向に距離を隔てて前記第1方向に配置された、請求項4記載の半導体装置。 - 前記半導体基板の前記第2主面の側に形成された第2主面側電極を備えた、請求項1〜9のいずれか1項に記載の半導体装置。
- 請求項1〜10のいずれか1項に記載された半導体装置を適用した半導体モジュールであって、
前記第1電極の前記第2領域にワイヤが接続された、半導体モジュール。
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JP2919757B2 (ja) * | 1994-11-14 | 1999-07-19 | ローム株式会社 | 絶縁ゲート型半導体装置 |
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