JP6458161B2 - 基板の熱処理のための装置、この装置のための担体及び基板支持要素 - Google Patents
基板の熱処理のための装置、この装置のための担体及び基板支持要素 Download PDFInfo
- Publication number
- JP6458161B2 JP6458161B2 JP2017548047A JP2017548047A JP6458161B2 JP 6458161 B2 JP6458161 B2 JP 6458161B2 JP 2017548047 A JP2017548047 A JP 2017548047A JP 2017548047 A JP2017548047 A JP 2017548047A JP 6458161 B2 JP6458161 B2 JP 6458161B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- carrier
- composite material
- support surface
- support element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 201
- 238000010438 heat treatment Methods 0.000 title claims description 62
- 239000004020 conductor Substances 0.000 claims description 104
- 239000002131 composite material Substances 0.000 claims description 69
- 239000000463 material Substances 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 52
- 238000012545 processing Methods 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 230000005855 radiation Effects 0.000 description 59
- 235000012431 wafers Nutrition 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 230000003595 spectral effect Effects 0.000 description 12
- 239000000969 carrier Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000005281 excited state Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910000953 kanthal Inorganic materials 0.000 description 2
- 239000005340 laminated glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
- H01L21/67323—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/24—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor being self-supporting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/032—Heaters specially adapted for heating by radiation heating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
αλ=ελ (1)
ελ=1−Rgh−Tgh (2)
102 受け入れフレーム
103 レベル
105 底面
108 支持面
Claims (9)
- 加熱デバイスと基板を担持するための支持面(108;212;304)が設けられた担体(100;203)とを有する基板の熱処理のための装置(200)であって、
前記担体(100;203)の少なくとも一部が、無定形基質成分と半導体材料の形態の追加成分とを含む複合材料から生成され、前記加熱デバイスの一部であって電流が通過する時に熱を発生する導電性抵抗材料で作られた導体経路(305;402;501;502;601;602)が、該担体(100;203)の前記面に適用される、
ことを特徴とする装置(200)。 - 装置(200)が、前記担体(100;203)が位置付けられた処理チャンバ(202)を有し、該処理チャンバ(202)は、前記導体経路(305;402;501;502;601;602)を電気接触させるために第1の電位及び第2の電位がそれを通して該処理チャンバ(202)内に導通される電流フィードスルーを有する処理チャンバ壁を有することを特徴とする請求項1に記載の装置(200)。
- 基板のための少なくとも1つの支持面(108;212;304)が設けられた基板の熱処理のための担体(100;203)であって、
担体(100;203)の少なくとも一部が、無定形基質成分と半導体材料の形態の追加成分とを含む複合材料から生成され、電流が通って流れる時に熱を発生する導電性抵抗材料で作られた導体経路(305;402;501;502;601;602)が、該複合材料の面に適用される、
ことを特徴とする担体(100;203)。 - 前記無定形基質成分は、シリカガラスであり、
前記半導体材料は、元素形態で存在し、該半導体材料の重量による比率が、0.1%から5%の間の範囲にある、
ことを特徴とする請求項3に記載の担体(100;203)。 - 前記導体経路(305;402;501;502;601;602)は、プラチナ、高耐熱鋼、タンタル、フェライト系FeCrAl合金、オーステナイト系CrFeNi合金から、又はモリブデンベースの合金から生成され、かつ0.01mm2から2.5mm2の範囲の断面積を有することを特徴とする請求項3または4に記載の担体(100;203)。
- 担体(100;203)が、前記支持面(108;212;304)を有する少なくとも1つの支持要素(205;300;400;500;600)と上面及び底面(401)とを含み、該支持面(108;212;304)は、該上面に割り当てられ、前記導体経路(305;402;501;502;601;602)は、該底面(401)に割り当てられることを特徴とする請求項3から請求項5のいずれか1項に記載の担体(100;203)。
- 複数の導体経路(305;402;501;502;601;602)が設けられ、該導体経路の各々が、個々に電気的に制御可能であることを特徴とする請求項3から請求項6のいずれか1項に記載の担体(100;203)。
- 半導体材料で作られたウェーハ状基板を水平の向きに受け入れるように設計されることを特徴とする請求項3から請求項7のいずれか1項に記載の担体(100;203)。
- 基板を担持するための支持面(108;212;304)を有する基板の熱処理のための担体(100;203)のための基板支持要素(205;300;400;500;600)であって、
支持要素(205;300;400;500;600)が、無定形基質成分、並びに半導体材料の形態の追加成分を含む複合材料から生成され、電流が通過する時に熱を発生する導電性抵抗材料で作られた導体経路(305;402;501;502;601;602)が、該複合材料の面に適用される、
ことを特徴とする基板支持要素(205;300;400;500;600)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016111234.8A DE102016111234B4 (de) | 2016-06-20 | 2016-06-20 | Vorrichtung für die thermische Behandlung eines Substrats sowie Trägerhorde und Substrat-Trägerelement dafür |
DE102016111234.8 | 2016-06-20 | ||
PCT/EP2017/062095 WO2017220268A1 (de) | 2016-06-20 | 2017-05-19 | Vorrichtung für die thermische behandlung eines substrats sowie trägerhorde und substrat-trägerelement dafür |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018527736A JP2018527736A (ja) | 2018-09-20 |
JP6458161B2 true JP6458161B2 (ja) | 2019-01-23 |
Family
ID=59101434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017548047A Active JP6458161B2 (ja) | 2016-06-20 | 2017-05-19 | 基板の熱処理のための装置、この装置のための担体及び基板支持要素 |
Country Status (11)
Country | Link |
---|---|
US (1) | US20180247842A1 (ja) |
EP (1) | EP3278357A1 (ja) |
JP (1) | JP6458161B2 (ja) |
KR (1) | KR101980473B1 (ja) |
CN (1) | CN107851593A (ja) |
DE (1) | DE102016111234B4 (ja) |
IL (1) | IL254199A (ja) |
RU (1) | RU2664559C1 (ja) |
SG (1) | SG11201707465VA (ja) |
TW (1) | TWI655706B (ja) |
WO (1) | WO2017220268A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018109738B3 (de) | 2018-04-23 | 2019-10-24 | Hanwha Q Cells Gmbh | Haltevorrichtung für Wafer, Verfahren zur Temperierung einer Haltevorrichtung und Vorrichtung zur Behandlung von Wafern |
DE102020124030B4 (de) | 2020-09-15 | 2022-06-15 | centrotherm international AG | Vorrichtung, System und Verfahren zur plasmaunterstützten chemischen Gasphasenabscheidung |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3463650A (en) * | 1967-02-13 | 1969-08-26 | Dresser Ind | Vitreous silica refractories |
US5238882A (en) * | 1989-05-10 | 1993-08-24 | Ngk Insulators, Ltd. | Method of manufacturing silicon nitride sintered bodies |
DE4022100C1 (ja) * | 1990-07-11 | 1991-10-24 | Heraeus Quarzglas Gmbh, 6450 Hanau, De | |
RU2059322C1 (ru) * | 1991-06-03 | 1996-04-27 | Научно-инженерно-технологический центр "Микроэлектроника" Белорусской инженерной технологической академии | Способ фотохимического осаждения тонких пленок и устройство для его осуществления |
JPH08273814A (ja) * | 1995-03-29 | 1996-10-18 | Ngk Spark Plug Co Ltd | セラミックヒーター |
US5926615A (en) * | 1997-07-08 | 1999-07-20 | National Science Council | Temperature compensation method for semiconductor wafers in rapid thermal processor using separated heat conducting rings as susceptors |
JP2001196152A (ja) * | 2000-01-13 | 2001-07-19 | Sumitomo Electric Ind Ltd | セラミックスヒータ |
JP2001244320A (ja) * | 2000-02-25 | 2001-09-07 | Ibiden Co Ltd | セラミック基板およびその製造方法 |
US7122844B2 (en) * | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
JP4349952B2 (ja) * | 2004-03-24 | 2009-10-21 | 京セラ株式会社 | ウェハ支持部材とその製造方法 |
US7176705B2 (en) * | 2004-06-07 | 2007-02-13 | Cascade Microtech, Inc. | Thermal optical chuck |
DE102004051846B4 (de) | 2004-08-23 | 2009-11-05 | Heraeus Quarzglas Gmbh & Co. Kg | Bauteil mit einer Reflektorschicht sowie Verfahren für seine Herstellung |
DE202005001721U1 (de) | 2005-01-20 | 2005-05-25 | Heraeus Quarzglas Gmbh & Co. Kg | Vertikalhorde aus Quarzglas für die Aufnahme von scheibenförmigen Substraten aus Halbleiterwerkstoff |
JP4756695B2 (ja) * | 2006-02-20 | 2011-08-24 | コバレントマテリアル株式会社 | 面状ヒータ |
JP5347214B2 (ja) * | 2006-06-12 | 2013-11-20 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
JP5018423B2 (ja) * | 2007-11-20 | 2012-09-05 | 住友電気工業株式会社 | Iii族窒化物半導体結晶基板および半導体デバイス |
JP4712836B2 (ja) * | 2008-07-07 | 2011-06-29 | 信越化学工業株式会社 | 耐腐食性積層セラミックス部材 |
DE102008063677B4 (de) | 2008-12-19 | 2012-10-04 | Heraeus Noblelight Gmbh | Infrarotstrahler und Verwendung des Infrarotstrahlers in einer Prozesskammer |
DE202009001817U1 (de) * | 2009-01-31 | 2009-06-04 | Roth & Rau Ag | Substratträger zur Halterung einer Vielzahl von Solarzellenwafern |
WO2010093568A2 (en) * | 2009-02-11 | 2010-08-19 | Applied Materials, Inc. | Non-contact substrate processing |
JP5239988B2 (ja) * | 2009-03-24 | 2013-07-17 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
KR101155432B1 (ko) * | 2009-08-18 | 2012-06-18 | 국제엘렉트릭코리아 주식회사 | 퍼니스형 반도체 설비 |
JP5267603B2 (ja) * | 2010-03-24 | 2013-08-21 | Toto株式会社 | 静電チャック |
JP5341049B2 (ja) * | 2010-10-29 | 2013-11-13 | 日本発條株式会社 | セラミックス焼結体の製造方法、セラミックス焼結体およびセラミックスヒータ |
KR101055064B1 (ko) * | 2011-07-08 | 2011-08-05 | 송기훈 | 엘이디 제조 장치 |
WO2013112313A1 (en) * | 2012-01-26 | 2013-08-01 | Applied Materials, Inc. | Thermal processing chamber with top substrate support assembly |
KR20130115024A (ko) * | 2012-04-10 | 2013-10-21 | 삼성전자주식회사 | 반도체 소자 제조 장치 및 제조 방법 |
DE102012106667B3 (de) * | 2012-07-23 | 2013-07-25 | Heraeus Noblelight Gmbh | Vorrichtung zur Bestrahlung eines Substrats |
-
2016
- 2016-06-20 DE DE102016111234.8A patent/DE102016111234B4/de active Active
-
2017
- 2017-05-19 SG SG11201707465VA patent/SG11201707465VA/en unknown
- 2017-05-19 RU RU2017133538A patent/RU2664559C1/ru not_active IP Right Cessation
- 2017-05-19 WO PCT/EP2017/062095 patent/WO2017220268A1/de active Application Filing
- 2017-05-19 KR KR1020177026863A patent/KR101980473B1/ko active IP Right Grant
- 2017-05-19 EP EP17732033.0A patent/EP3278357A1/de not_active Withdrawn
- 2017-05-19 CN CN201780001149.3A patent/CN107851593A/zh active Pending
- 2017-05-19 JP JP2017548047A patent/JP6458161B2/ja active Active
- 2017-05-19 US US15/556,382 patent/US20180247842A1/en not_active Abandoned
- 2017-06-16 TW TW106120119A patent/TWI655706B/zh not_active IP Right Cessation
- 2017-08-29 IL IL254199A patent/IL254199A/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR101980473B1 (ko) | 2019-05-20 |
DE102016111234B4 (de) | 2018-01-25 |
CN107851593A (zh) | 2018-03-27 |
IL254199A (en) | 2018-04-30 |
WO2017220268A1 (de) | 2017-12-28 |
JP2018527736A (ja) | 2018-09-20 |
SG11201707465VA (en) | 2018-05-30 |
DE102016111234A1 (de) | 2017-12-21 |
RU2664559C1 (ru) | 2018-08-21 |
EP3278357A1 (de) | 2018-02-07 |
KR20180116123A (ko) | 2018-10-24 |
TW201803003A (zh) | 2018-01-16 |
US20180247842A1 (en) | 2018-08-30 |
TWI655706B (zh) | 2019-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102222601B1 (ko) | 적외선 가열 유닛 | |
KR102276922B1 (ko) | 적외선 패널 라디에이터 | |
JP6714772B2 (ja) | 赤外線エミッター | |
US20160379854A1 (en) | Vacuum Compatible LED Substrate Heater | |
JP6458161B2 (ja) | 基板の熱処理のための装置、この装置のための担体及び基板支持要素 | |
US20190174580A1 (en) | Infrared panel radiator and process for production of the infrared panel radiator | |
JP2003524745A (ja) | 複数の被処理物をテンパリングする装置及び方法 | |
US10899144B2 (en) | Printing press having an infrared dryer unit | |
CN105706225B (zh) | 辐射加热器布置 | |
CA2978448C (en) | Apparatus for thermal treatment of a substrate, a carrier and a substrate support element for that apparatus | |
KR100679679B1 (ko) | 적외선 가열기구 및 기지 가열기 형식의 진공 챔버 | |
JP2006332541A (ja) | 光加熱装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20180806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180814 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181010 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181127 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181221 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6458161 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |