JP6445048B2 - 固体撮像装置 - Google Patents
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- JP6445048B2 JP6445048B2 JP2016568246A JP2016568246A JP6445048B2 JP 6445048 B2 JP6445048 B2 JP 6445048B2 JP 2016568246 A JP2016568246 A JP 2016568246A JP 2016568246 A JP2016568246 A JP 2016568246A JP 6445048 B2 JP6445048 B2 JP 6445048B2
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- 238000006243 chemical reaction Methods 0.000 claims description 218
- 239000000758 substrate Substances 0.000 claims description 91
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- 239000010408 film Substances 0.000 description 10
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- 210000001747 pupil Anatomy 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
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- 239000010409 thin film Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
- G02B27/1013—Beam splitting or combining systems for splitting or combining different wavelengths for colour or multispectral image sensors, e.g. splitting an image into monochromatic image components on respective sensors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/144—Devices controlled by radiation
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Automatic Focus Adjustment (AREA)
Description
本発明の第5の態様によれば、第1の態様において、前記分離層は、光を反射する特性を有してもよい。
図1は、本発明の第1の実施形態の固体撮像装置1aの構成を示している。図1では固体撮像装置1aの断面が示されている。図1に示すように、固体撮像装置1aは、第1の基板10と、第2の基板20と、マイクロレンズ301と、カラーフィルタ302と、撮像レンズ400とを有する。第1の基板10と、第2の基板20とは積層されている。
図6は、本発明の第2の実施形態の固体撮像装置1bの構成を示している。図6では固体撮像装置1bの断面が示されている。図6に示すように、固体撮像装置1bは、第1の基板10と、第1の基板10に積層された第2の基板20と、マイクロレンズ301と、カラーフィルタ302と、撮像レンズ400とを有する。
10,80 第1の基板
20,90 第2の基板
100,800 第1の半導体層
101,801 第1の光電変換部
110,810 第1の配線層
111,811 第1の配線
112,812 第1のビア
113,813 第1の層間絶縁膜
114 分離層
200,900 第2の半導体層
201,901 第2の光電変換部
202 第3の光電変換部
203 電荷分離領域
210,910 第2の配線層
211,911 第2の配線
212,912 第2のビア
213,913 第2の層間絶縁膜
301,ML マイクロレンズ
302,CF カラーフィルタ
811a 遮光層
920 MOSトランジスタ
8110 開口部
Claims (5)
- 複数のマイクロレンズと、
複数の第1の光電変換部を有し、前記複数の第1の光電変換部はそれぞれ前記複数のマイクロレンズのいずれか1つに対応し、前記複数のマイクロレンズを透過した第1の光は、前記複数のマイクロレンズに対応する前記複数の第1の光電変換部に入射し、前記複数の第1の光電変換部は、前記第1の光に応じた第1の信号を生成する第1の基板と、
複数の第2の光電変換部および複数の第3の光電変換部を有し、複数の組が配置され、前記複数の組はそれぞれ1つの前記第2の光電変換部および1つの前記第3の光電変換部を含み、前記複数の組はそれぞれ前記複数の第1の光電変換部の少なくとも1つに対応し、前記複数の第1の光電変換部を透過した第2の光は、前記複数の第1の光電変換部に対応する前記複数の組に入射し、前記複数の第2の光電変換部は、第3の光に応じた第2の信号を生成し、前記第3の光は、第1のレンズ領域を通過した光に対応する前記第2の光であり、前記複数の第3の光電変換部は、第4の光に応じた第3の信号を生成し、前記第4の光は、第2のレンズ領域を通過した光に対応する前記第2の光である第2の基板と、
を有し、
前記複数のマイクロレンズの光学的前方に撮像レンズが配置され、前記撮像レンズは、前記第1のレンズ領域と前記第2のレンズ領域とを有し、
前記第2の基板はさらに、前記第2の光電変換部と前記第3の光電変換部との間に配置された電荷分離領域を有し、前記電荷分離領域は前記第2の光電変換部と前記第3の光電変換部との間の電荷の移動を妨げ、
前記第1の基板は、前記電荷分離領域から前記第1の光電変換部の方向へ柱状に伸びるように形成され、前記第2の光を前記第3の光と前記第4の光に分離し、前記第3の光と前記第4の光をそれぞれ第2の光電変換部と第3の光電変換部に入射させる分離層をさらに有する
固体撮像装置。 - 前記第1の基板はさらに、
積層された複数の配線を有する配線層を有し、
前記分離層は、前記複数の配線の一部を有し、前記電荷分離領域と重なるように配置されている
請求項1に記載の固体撮像装置。 - 前記複数の組は行列状に配置され、
前記複数の組の配列の同一方向に沿って配置された2個以上の前記第2の光電変換部で生成された2個以上の前記第2の信号は加算され、前記同一方向に沿って配置された2個以上の前記第3の光電変換部で生成された2個以上の前記第3の信号は加算される
請求項1に記載の固体撮像装置。 - 前記複数の組はそれぞれ2個以上の前記第1の光電変換部に対応し、2個以上の前記第1の光電変換部を透過した前記第2の光は、前記2個以上の前記第1の光電変換部に対応する前記組に含まれる1つの前記第2の光電変換部および1つの前記第3の光電変換部に入射する請求項1に記載の固体撮像装置。
- 前記分離層は、光を反射する特性を有する請求項1に記載の固体撮像装置。
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PCT/JP2015/050502 WO2016111004A1 (ja) | 2015-01-09 | 2015-01-09 | 固体撮像装置 |
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JP6445048B2 true JP6445048B2 (ja) | 2018-12-26 |
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US (1) | US10170507B2 (ja) |
JP (1) | JP6445048B2 (ja) |
WO (1) | WO2016111004A1 (ja) |
Families Citing this family (4)
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WO2016194577A1 (ja) * | 2015-05-29 | 2016-12-08 | ソニー株式会社 | 撮像素子、撮像方法、プログラム、並びに電子機器 |
JP7071055B2 (ja) * | 2017-02-24 | 2022-05-18 | キヤノン株式会社 | 撮像素子および撮像装置 |
JP7416605B2 (ja) * | 2019-11-14 | 2024-01-17 | 日本放送協会 | 撮像素子 |
JP7437957B2 (ja) * | 2020-02-06 | 2024-02-26 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、固体撮像装置及び電子機器 |
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US4410804A (en) * | 1981-07-13 | 1983-10-18 | Honeywell Inc. | Two dimensional image panel with range measurement capability |
JP5537905B2 (ja) * | 2009-11-10 | 2014-07-02 | 富士フイルム株式会社 | 撮像素子及び撮像装置 |
JP2013187475A (ja) * | 2012-03-09 | 2013-09-19 | Olympus Corp | 固体撮像装置およびカメラシステム |
WO2014097899A1 (ja) * | 2012-12-21 | 2014-06-26 | 富士フイルム株式会社 | 固体撮像装置 |
US9293495B2 (en) * | 2014-05-05 | 2016-03-22 | Semiconductor Components Industries, Llc | Imaging circuitry with robust scribe line structures |
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US20170263660A1 (en) | 2017-09-14 |
WO2016111004A1 (ja) | 2016-07-14 |
JPWO2016111004A1 (ja) | 2017-10-19 |
US10170507B2 (en) | 2019-01-01 |
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