JP6428091B2 - 赤外線イメージセンサ - Google Patents
赤外線イメージセンサ Download PDFInfo
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- JP6428091B2 JP6428091B2 JP2014194187A JP2014194187A JP6428091B2 JP 6428091 B2 JP6428091 B2 JP 6428091B2 JP 2014194187 A JP2014194187 A JP 2014194187A JP 2014194187 A JP2014194187 A JP 2014194187A JP 6428091 B2 JP6428091 B2 JP 6428091B2
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- 239000004065 semiconductor Substances 0.000 claims description 89
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 23
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 18
- 239000000758 substrate Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
一実施例では、半導体積層31は、受光層33、キャップ層39a、及びスペーサ層39bを含み、また基板35の主面35a上に設けられたバッファ層を含むことができる。半導体積層31は、基板35上に設けられたバッファ層を備えることができる。また、半導体積層31の表面は、SiN膜といったシリコン系無機絶縁膜で覆われることができる。第1電極37aは、フォトダイオード25毎にシリコン系無機絶縁膜に設けられた開口を介して半導体積層31に接触を成す。
半導体積層31の一例。
受光層33:GaAsSb/InGaAs。
スペーサ層39b:InGaAs。
キャップ層39a:InP。
受光層33のためのGaAsSb/InGaAs、スペーサ層39bのためのInGaAs、及びキャップ層39aのためのInPは順に、例えば分子線エピタキシー法で半導体基板上に成長される。
期間、 読出信号ROUTの値。
時刻t0からt1の期間、S1。
時刻t1からt2の期間、S2。
時刻t2からt3の期間、S3。
時刻t3からt4の期間、S4。
時刻t5からの期間、 S5。
タイプII量子井戸構造を含む半導体積層31に光Lが入射する。半導体積層31からの光電流ILは、例えばタイプII遷移成分及びバンド間遷移成分を有する。タイプII量子井戸構造は、本実施例では、大きなバイアス電圧依存性を示す。本実施例では、バイアス電圧BVの第1値V1において相対的に小さい感度を有し、バイアス電圧BVの第2値V2において相対的に大きい感度を有する。一方、バンド間遷移成分は、非常に小さい(実質的にゼロの)バイアス電圧依存性を示す。時刻t1からt2の期間における値S2、及び時刻t3からt4の期間の値S4は、時刻t0からt1の期間における値S1、時刻t2からt3の期間における値S3、及び時刻t4以降の期間の値S5に比べて、より多くのタイプII遷移成分を含む。より具体的には、値S2及び値S4はタイプII遷移成分を含み、値S1、値S3及び値S5はタイプII遷移成分を実質的に含まない。時刻t1からt5までの期間において、値S1〜S5は、ほぼ同量のバンド間遷移成分を有する。
Claims (6)
- 赤外線イメージセンサであって、
タイミング信号に応答して、第1値及び第2値を有するバイアス電圧を生成するバイアス回路と、
一次元又は二次元のアレイに配置された複数のフォトダイオードを含み、前記バイアス電圧を受ける半導体受光素子と、
前記アレイ内の前記複数のフォトダイオード毎に設けられ前記複数のフォトダイオードからの電気信号をそれぞれ受ける複数の読出回路と、
前記タイミング信号に同期して前記読出回路からの読出信号を処理する信号処理回路と、
を備え、
前記半導体受光素子は、前記フォトダイオード毎に設けられアノード及びカソードの一方である第1電極と、前記アノード及び前記カソードの他方である第2電極と、を含み、
前記バイアス電圧は、前記第1電極と前記第2電極との間に印加され、
各フォトダイオードは、III−V族化合物半導体の受光層を備え、前記受光層はタイプIIの量子井戸構造を有し、前記量子井戸構造は、アンチモンを構成元素として含む第1化合物半導体層を備え、
前記量子井戸構造は、第2化合物半導体層を更に備え、
前記第1化合物半導体層はGaAsSbを備え、
前記第2化合物半導体層はInGaAsを備える、赤外線イメージセンサ。 - 前記半導体受光素子は、InGaAsバルク層を含む、請求項1に記載された赤外線イメージセンサ。
- 前記半導体受光素子は、前記フォトダイオード毎に設けられた半導体メサの配列を備え、
前記半導体メサは、前記受光層上に設けられた第1導電型のキャップ層と、前記キャップ層内の前記フォトダイオード毎に設けられた第2導電型の半導体領域とを含む、請求項1又は請求項2に記載された赤外線イメージセンサ。 - 前記半導体受光素子は、前記受光層上に設けられた第1導電型のキャップ層と、前記キャップ層内の前記フォトダイオード毎に設けられた第2導電型の半導体領域とを含み、
前記キャップ層は、前記フォトダイオード毎における前記半導体領域を接続するように前記半導体領域に延在する、請求項1又は請求項2に記載された赤外線イメージセンサ。 - 前記半導体領域は、p型ドーパントの不純物拡散により形成される、請求項4に記載された赤外線イメージセンサ。
- 前記半導体受光素子は、前記受光層上に設けられたInGaAsスペーサ層と、前記InGaAsスペーサ層上に設けられたキャップ層とを有する、請求項1に記載された赤外線イメージセンサ。
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JP2014194187A JP6428091B2 (ja) | 2014-09-24 | 2014-09-24 | 赤外線イメージセンサ |
US14/855,016 US9728577B2 (en) | 2014-09-24 | 2015-09-15 | Infrared image sensor |
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KR102562478B1 (ko) * | 2023-04-17 | 2023-08-03 | 한국표준과학연구원 | 적외선 어레이 이미지 센서 및 이의 제조 방법 |
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JP2546407B2 (ja) * | 1990-03-27 | 1996-10-23 | 日本電気株式会社 | ハイブリッド素子及びその製造方法 |
US5329136A (en) * | 1993-04-30 | 1994-07-12 | At&T Bell Laboratories | Voltage-tunable photodetector |
US6407439B1 (en) * | 1999-08-19 | 2002-06-18 | Epitaxial Technologies, Llc | Programmable multi-wavelength detector array |
JP3436196B2 (ja) * | 1999-09-06 | 2003-08-11 | 株式会社島津製作所 | 2次元アレイ型検出装置 |
US7247892B2 (en) * | 2000-04-24 | 2007-07-24 | Taylor Geoff W | Imaging array utilizing thyristor-based pixel elements |
JP4320569B2 (ja) * | 2003-06-12 | 2009-08-26 | 住友電気工業株式会社 | 光受信装置 |
JP4625685B2 (ja) * | 2004-11-26 | 2011-02-02 | 株式会社東芝 | 固体撮像装置 |
JP4277911B2 (ja) * | 2007-02-27 | 2009-06-10 | ソニー株式会社 | 固体撮像装置及び撮像装置 |
US7652252B1 (en) * | 2007-10-08 | 2010-01-26 | Hrl Laboratories, Llc | Electronically tunable and reconfigurable hyperspectral photon detector |
JP5422990B2 (ja) * | 2008-12-22 | 2014-02-19 | 住友電気工業株式会社 | 生体成分検出装置 |
JP2011171367A (ja) * | 2010-02-16 | 2011-09-01 | Nec Corp | 半導体受光素子および半導体受光装置 |
JP5218476B2 (ja) * | 2010-06-03 | 2013-06-26 | 住友電気工業株式会社 | 半導体素子、光学センサ装置および半導体素子の製造方法 |
JP4721147B1 (ja) | 2011-02-21 | 2011-07-13 | 住友電気工業株式会社 | 生体成分検出装置 |
JP2014110380A (ja) * | 2012-12-04 | 2014-06-12 | Sumitomo Electric Ind Ltd | アレイ型受光素子、及びアレイ型受光素子を製造する方法 |
JP2014110391A (ja) * | 2012-12-04 | 2014-06-12 | Sumitomo Electric Ind Ltd | 受光素子アレイ、その製造法、およびセンシング装置 |
US9537027B2 (en) * | 2013-03-28 | 2017-01-03 | University Of Massachusetts | Backside configured surface plasmonic structure for infrared photodetector and imaging focal plane array enhancement |
US20150288907A1 (en) * | 2014-04-03 | 2015-10-08 | Raytheon Company | Method and system for managing defects in focal plane arrays using redundant components |
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