JP6418605B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6418605B2 JP6418605B2 JP2015152646A JP2015152646A JP6418605B2 JP 6418605 B2 JP6418605 B2 JP 6418605B2 JP 2015152646 A JP2015152646 A JP 2015152646A JP 2015152646 A JP2015152646 A JP 2015152646A JP 6418605 B2 JP6418605 B2 JP 6418605B2
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Description
エッチング工程(S6)におけるエッチング条件をサンプル毎に変えてサンプル1ないしサンプル3の半導体装置を作製した。各サンプルのエッチング条件を表1に示す。サンプル1の作製では、ArガスとN2ガスの両方のガスを用いてエッチングを行った後に導電性シールド層を形成した。サンプル2の作製では、Arガスのみを用いてエッチングを行った後に導電性シールド層を形成した。サンプル3の作製では、エッチングを行わずに導電性シールド層を形成した。サンプル1ないしサンプル3において、導電性シールド層はステンレス鋼層(SUS)とステンレス鋼層上に設けられた銅層(Cu)との積層構造を有する。ステンレス鋼層(SUS)の厚さは、0.1μmである。銅層(Cu)の厚さは3μmである。さらに、サンプル1ないしサンプル3の作製では、導電性シールド層上に厚さ0.3μmのステンレス鋼層を形成した。
無機充填材を含む樹脂層上に厚さ10nmのステンレス鋼層を形成することにより、サンプルA、サンプルB、およびサンプルCを作製した。サンプルAの作製では、ArガスおよびN2ガスの両方を供給して樹脂層のエッチングを行った。サンプルBの作製では、Arガスのみを供給して樹脂層のエッチングを行った。サンプルCの作製では、樹脂層のエッチングを行わなかった。サンプルAの作製におけるエッチング工程のArガス流量およびN2ガス流量は、表2に示すように実施例1のサンプル1の作製におけるエッチング工程のArガス流量およびN2ガス流量と同じである。サンプルBの作製におけるエッチング工程のArガス流量は、表2に示すように実施例1のサンプル2の作製におけるエッチング工程のArガス流量と同じである。
Claims (5)
- 第1の面と第2の面とを有する基体と、グランド配線と、を有する配線基板と、
前記第1の面上に搭載された半導体チップと、
前記第2の面上に設けられ、前記グランド配線に電気的に接続されたグランド端子を含む外部接続端子と、
前記半導体チップを封止する封止樹脂層と、
前記封止樹脂層の表面に接し、かつ金属炭化物を含む第1の金属化合物部と、前記第1の金属化合物部上に設けられ、かつ金属窒化物を含む第2の金属化合物部と、を有する金属化合物層と、
前記金属化合物層を挟んで前記封止樹脂層を覆うように設けられた導電性シールド層と、を具備し、
前記グランド配線は、前記配線基板の側面に露出し、かつ前記導電性シールド層に電気的に接続されている半導体装置。 - 前記導電性シールド層上に設けられた保護層をさらに具備し、
前記導電性シールド層は、
前記金属化合物層を挟んで前記封止樹脂層を覆う第1の金属層と、
前記第1の金属層上に設けられ、かつ前記第1の金属層よりも電気抵抗率が低い第2の金属層と、を有する、請求項1に記載の半導体装置。 - 第1の面と第2の面とを有する基体と、グランド配線と、を有する配線基板と、
前記第1の面上に搭載された半導体チップと、
前記第2の面上に設けられ、前記グランド配線に電気的に接続されたグランド端子を含む外部接続端子と、
前記半導体チップを封止する封止樹脂層と、
前記封止樹脂層の表面に接し、金属窒化物を含む金属化合物層と、
前記金属化合物層を挟んで前記封止樹脂層を覆うように設けられた導電性シールド層と、
前記導電性シールド層上に設けられた保護層と、を具備し、
前記導電性シールド層は、
前記金属化合物層を挟んで前記封止樹脂層を覆う第1の金属層と、
前記第1の金属層上に設けられ、かつ前記第1の金属層よりも電気抵抗率が低い第2の金属層と、を有し、
前記グランド配線は、前記配線基板の側面に露出し、かつ前記導電性シールド層に電気的に接続されている半導体装置。 - 第1の面と第2の面とを有する基体と、グランド配線と、を有する配線基板の前記第1の面上に半導体チップを搭載する工程と、
前記半導体チップを封止するように封止樹脂層を形成する工程と、
前記配線基板の側面に前記グランド配線を露出させる工程と、
前記封止樹脂層の表面に接し、かつ金属炭化物を含む第1の金属化合物部と、前記第1の金属化合物部上に設けられ、かつ金属窒化物を含む第2の金属化合物部と、を有する金属化合物層を形成する工程と、
前記グランド配線に電気的に接続し、かつ前記金属化合物層を挟んで前記封止樹脂層を覆うように導電性シールド層を形成する工程と、
前記グランド配線に電気的に接続するグランド端子を含む外部接続端子を前記第2の面上に形成する工程と、を具備する半導体装置の製造方法。 - 第1の面と第2の面とを有する基体と、グランド配線と、を有する配線基板の前記第1の面上に半導体チップを搭載する工程と、
前記半導体チップを封止するように封止樹脂層を形成する工程と、
前記配線基板の側面に前記グランド配線を露出させる工程と、
窒素を含む雰囲気下でのドライエッチングにより前記封止樹脂層の一部を除去する工程と、
前記グランド配線に電気的に接続し、かつ前記封止樹脂層を覆うように導電性シールド層を形成するとともに前記封止樹脂層と前記導電性シールド層との間に金属窒化物を含有する金属化合物層を形成する工程と、
前記グランド配線に電気的に接続するグランド端子を含む外部接続端子を前記第2の面上に形成する工程と、を具備する半導体装置の製造方法。
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JP2015152646A JP6418605B2 (ja) | 2015-07-31 | 2015-07-31 | 半導体装置および半導体装置の製造方法 |
TW105106350A TWI621238B (zh) | 2015-07-31 | 2016-03-02 | 半導體裝置及其製造方法 |
CN201610208262.6A CN106409781B (zh) | 2015-07-31 | 2016-04-06 | 半导体装置及其制造方法 |
CN201811610366.5A CN110010582B (zh) | 2015-07-31 | 2016-04-06 | 半导体装置及其制造方法 |
US15/223,842 US9881876B2 (en) | 2015-07-31 | 2016-07-29 | Semiconductor device having conductive shield layer |
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US11557540B2 (en) | 2020-03-16 | 2023-01-17 | Kioxia Corporation | Semiconductor device |
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