JP6393618B2 - 多層プリント配線基板の製造方法及びベース基材 - Google Patents
多層プリント配線基板の製造方法及びベース基材 Download PDFInfo
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- JP6393618B2 JP6393618B2 JP2014539854A JP2014539854A JP6393618B2 JP 6393618 B2 JP6393618 B2 JP 6393618B2 JP 2014539854 A JP2014539854 A JP 2014539854A JP 2014539854 A JP2014539854 A JP 2014539854A JP 6393618 B2 JP6393618 B2 JP 6393618B2
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- VHTVKYGGDBORAK-UHFFFAOYSA-N ethanolate propan-2-ylaluminum(2+) Chemical compound CC[O-].CC[O-].CC(C)[Al++] VHTVKYGGDBORAK-UHFFFAOYSA-N 0.000 description 1
- BLFCDSUFXJPVAS-UHFFFAOYSA-N ethanolate;(4-methylphenyl)aluminum(2+) Chemical compound CC[O-].CC[O-].CC1=CC=C([Al+2])C=C1 BLFCDSUFXJPVAS-UHFFFAOYSA-N 0.000 description 1
- KKDMRHPZWJTSLH-UHFFFAOYSA-N ethanolate;hexylaluminum(2+) Chemical compound CC[O-].CC[O-].CCCCCC[Al+2] KKDMRHPZWJTSLH-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- UABOHUHCGKGGOJ-UHFFFAOYSA-N ethyl(dimethoxy)alumane Chemical compound [O-]C.[O-]C.CC[Al+2] UABOHUHCGKGGOJ-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- XPURMEXEEOGCNE-UHFFFAOYSA-N ethyl-di(propan-2-yloxy)alumane Chemical compound CC[Al+2].CC(C)[O-].CC(C)[O-] XPURMEXEEOGCNE-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- GNTRBBGWVVMYJH-UHFFFAOYSA-M fluoro(dimethyl)alumane Chemical compound [F-].C[Al+]C GNTRBBGWVVMYJH-UHFFFAOYSA-M 0.000 description 1
- CTIKAHQFRQTTAY-UHFFFAOYSA-N fluoro(trimethyl)silane Chemical compound C[Si](C)(C)F CTIKAHQFRQTTAY-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- YCSJJCRCOUGEPI-UHFFFAOYSA-N hexyl(dimethoxy)alumane Chemical compound CCCCCC[Al](OC)OC YCSJJCRCOUGEPI-UHFFFAOYSA-N 0.000 description 1
- MQHLDMJXVHJRLB-UHFFFAOYSA-N hexylaluminum(2+);propan-2-olate Chemical compound CC(C)[O-].CC(C)[O-].CCCCCC[Al+2] MQHLDMJXVHJRLB-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 125000002510 isobutoxy group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])O* 0.000 description 1
- 125000005921 isopentoxy group Chemical group 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- DKUIXLPCCDROFD-UHFFFAOYSA-N methanolate;methylaluminum(2+) Chemical compound [O-]C.[O-]C.[Al+2]C DKUIXLPCCDROFD-UHFFFAOYSA-N 0.000 description 1
- OFSZFUWOFXCOQU-UHFFFAOYSA-N methanolate;propan-2-ylaluminum(2+) Chemical compound [O-]C.[O-]C.CC(C)[Al+2] OFSZFUWOFXCOQU-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- BQBCXNQILNPAPX-UHFFFAOYSA-N methoxy(dimethyl)alumane Chemical compound [O-]C.C[Al+]C BQBCXNQILNPAPX-UHFFFAOYSA-N 0.000 description 1
- RAOCWFJKLAHUBB-UHFFFAOYSA-N methoxymethane;1,3,5-triazine-2,4,6-triamine Chemical compound COC.NC1=NC(N)=NC(N)=N1 RAOCWFJKLAHUBB-UHFFFAOYSA-N 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- YSTQWZZQKCCBAY-UHFFFAOYSA-L methylaluminum(2+);dichloride Chemical compound C[Al](Cl)Cl YSTQWZZQKCCBAY-UHFFFAOYSA-L 0.000 description 1
- SEEXDZBMBZLIOH-UHFFFAOYSA-N methylaluminum(2+);propan-2-olate Chemical compound [Al+2]C.CC(C)[O-].CC(C)[O-] SEEXDZBMBZLIOH-UHFFFAOYSA-N 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000003935 n-pentoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 125000005484 neopentoxy group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- QRCZEWPMOPYPKB-UHFFFAOYSA-N pentyl-di(propan-2-yloxy)alumane Chemical compound C(CCCC)[Al](OC(C)C)OC(C)C QRCZEWPMOPYPKB-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- BPQPJXCUBLCZIB-UHFFFAOYSA-L phenylaluminum(2+);dichloride Chemical compound [Cl-].[Cl-].[Al+2]C1=CC=CC=C1 BPQPJXCUBLCZIB-UHFFFAOYSA-L 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UZLGSAUVSUOWGY-UHFFFAOYSA-N tert-butyl(diethoxy)alumane Chemical compound C(C)(C)(C)[Al](OCC)OCC UZLGSAUVSUOWGY-UHFFFAOYSA-N 0.000 description 1
- BPTQVQYEVLOCAO-UHFFFAOYSA-N tert-butyl(dimethoxy)alumane Chemical compound C(C)(C)(C)[Al](OC)OC BPTQVQYEVLOCAO-UHFFFAOYSA-N 0.000 description 1
- ASEHKQZNVUOPRW-UHFFFAOYSA-N tert-butyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C(C)(C)C ASEHKQZNVUOPRW-UHFFFAOYSA-N 0.000 description 1
- HXLWJGIPGJFBEZ-UHFFFAOYSA-N tert-butyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C(C)(C)C HXLWJGIPGJFBEZ-UHFFFAOYSA-N 0.000 description 1
- QUQKJALIMSEMGG-UHFFFAOYSA-N tert-butyl-di(propan-2-yloxy)alumane Chemical compound C(C)(C)(C)[Al](OC(C)C)OC(C)C QUQKJALIMSEMGG-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- AWIJRPNMLHPLNC-UHFFFAOYSA-N thiocarboxylic acid group Chemical group C(=S)O AWIJRPNMLHPLNC-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- BPCXHCSZMTWUBW-UHFFFAOYSA-N triethoxy(1,1,2,2,3,3,4,4,5,5,8,8,8-tridecafluorooctyl)silane Chemical compound CCO[Si](OCC)(OCC)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCC(F)(F)F BPCXHCSZMTWUBW-UHFFFAOYSA-N 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- BJDLPDPRMYAOCM-UHFFFAOYSA-N triethoxy(propan-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)C BJDLPDPRMYAOCM-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- PADYPAQRESYCQZ-UHFFFAOYSA-N triethoxy-(4-methylphenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=C(C)C=C1 PADYPAQRESYCQZ-UHFFFAOYSA-N 0.000 description 1
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- LGROXJWYRXANBB-UHFFFAOYSA-N trimethoxy(propan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)C LGROXJWYRXANBB-UHFFFAOYSA-N 0.000 description 1
- XQEGZYAXBCFSBS-UHFFFAOYSA-N trimethoxy-(4-methylphenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=C(C)C=C1 XQEGZYAXBCFSBS-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1366—Spraying coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
に示すシラン化合物、その加水分解生成物、該加水分解生成物の縮合体を単独で又は複数組み合わせて用いてなる、と良い。
に示すアルミネート化合物、チタネート化合物、ジルコネート化合物、これらの加水分解生成物、該加水分解生成物の縮合体を単独で又は複数組み合わせて用いてなる、と良い。
に示すシラン化合物、その加水分解生成物、該加水分解生成物の縮合体を単独で又は複数組み合わせて用いてなる、と良い。
に示すアルミネート化合物、チタネート化合物、ジルコネート化合物、これらの加水分解生成物、該加水分解生成物の縮合体を単独で又は複数組み合わせて用いてなる、と良い。
図1乃至図3を参照して第1実施形態について説明する。図1は、ベース基材の概略的な断面図である。図2は、ベース基材上にビルドアップ層を積層した状態を示す概略的な工程図である。図3は、多層プリント配線基板とベース基材を分離する工程を模式的に示す工程図である。
Ni濃度 17g/L(NiSO4として添加)
Zn濃度 4g/L(ZnSO4として添加)
pH 3.1
液温 40℃
電流密度 0.1〜10A/dm2
めっき時間 0.1〜10秒
Cr濃度 1.4g/L(CrO3又はK2CrO7として添加)
Zn濃度 0.01〜1.0g/L(ZnSO4として添加)
Na2SO4濃度 10g/L
pH 4.8
液温 55℃
電流密度 0.1〜10A/dm2
めっき時間 0.1〜10秒
離型剤層30の構成材料は、本願に開示若しくは現時点において入手可能な材料に限定されるべきものではないが、例えば、次の化学式に示すシラン化合物、その加水分解生成物、該加水分解生成物の縮合体の単独又は組み合わせを用いても良い。
上述のシラン化合物に代えて、分子内に2つ以下のメルカプト基を有する化合物を離型剤層30に用いても良い。この例としては、チオール、ジチオール、チオカルボン酸又はその塩、ジチオカルボン酸又はその塩、チオスルホン酸又はその塩、及びジチオスルホン酸又はその塩が挙げられ、これらの中から選択される少なくとも一種を用いることができる。
次式に示す構造を有するアルミネート化合物、チタネート化合物、ジルコネート化合物、又はその加水分解生成物質、又は該加水分解生成物質の縮合体(以下、単に金属アルコキシドと記述する)を単独で又は複数混合して使用して、金属張積層板25上に絶縁層40を積層することで、適度に密着性が低下し、剥離強度を後述するような範囲に調節できる。
これらの炭化水素基は一つ以上の水素原子がハロゲン原子で置換されてもよく、例えば、フッ素原子、塩素原子、又は臭素原子で置換されることができる。
シリコーンと、エポキシ系樹脂、メラミン系樹脂及びフッ素樹脂から選択される何れか1つ又は複数の樹脂とで構成される樹脂塗膜を離型剤層として活用して絶縁層40とベース基材100を貼り合わせても良く、適度に密着性が低下し、剥離強度を後述するような範囲に調節できる。
塗布工程は、金属張積層板25の金属箔20上に、主剤としてのシリコーンと、硬化剤としてのエポキシ系樹脂、メラミン系樹脂と、必要に応じて離型剤としてのフッ素樹脂とからなる樹脂塗料を塗布して樹脂塗膜を形成する工程である。樹脂塗料は、アルコール等の有機溶媒にエポキシ系樹脂、メラミン系樹脂、フッ素樹脂及びシリコーンを溶解したものである。また、樹脂塗料における配合量(添加量)は、シリコーン100質量部に対して、エポキシ系樹脂、メラミン系樹脂の合計が10〜1500質量部であることが好ましい。また、フッ素樹脂は、シリコーン100質量部に対して、0〜50質量部であることが好ましい。
焼付け工程は、塗布工程で形成された樹脂塗膜に125〜320℃(焼付け温度)で0.5〜60秒間(焼付け時間)の焼付け処理を施す工程である。このように、所定配合量の樹脂塗料で形成された樹脂塗膜に所定条件の焼付け処理を施すことによって、樹脂塗膜により付与される金属張積層板25と絶縁層40との間の剥離強度が所定範囲に制御される。本発明において、焼付け温度はコーティング対象物の到達温度である。また、焼付け処理に使用される加熱手段としては、従来公知の装置を使用する。
図4及び図5を参照して第2実施形態について説明する。図4は、ベース基材の概略的な断面図である。図5は、ベース基材の両面上にビルドアップ層を積層した状態を示す概略的な断面図である。本実施形態においては、図4に示すように、プリプレグ10の下面(主面)上にも金属箔20、離型剤層30を順に積層したものをベース基材100として採用する。このような場合であっても第1実施形態と同様の効果を得ることができる。本構成の場合、図5に模式的に示すようにベース基材100の両面にビルドアップ層110を積層することができ、ベース基材100の利用効率を効果的に高めることができ、また多層プリント配線基板の製造効率を高めることができる。
複数の電解銅箔(厚さ12μm)を準備し、それぞれの電解銅箔のシャイニー(S)面に対して、下記の条件によるニッケル−亜鉛(Ni−Zn)合金めっき処理及びクロメート(Cr−Znクロメート)処理を施し、S面の十点平均粗さ(Rz jis:JIS B 0601(2001)に準拠して測定)を1.5μmとした。
Ni濃度 17g/L(NiSO4として添加)
Zn濃度 4g/L(ZnSO4として添加)
pH 3.1
液温 40℃
電流密度 0.1〜10A/dm2
めっき時間 0.1〜10秒
Cr濃度 1.4g/L(CrO3又はK2CrO7として添加)
Zn濃度 0.01〜1.0g/L(ZnSO4として添加)
Na2SO4濃度 10g/L
pH 4.8
液温 55℃
電流密度 0.1〜10A/dm2
めっき時間 0.1〜10秒
図6の表に示す銅箔、樹脂(プリプレグ)及び離型剤を用いて、実験例1と同様の手順で、ベース基材とビルドアップ層からなる積層体を作製した。それぞれについて実験例1と同様の評価を行った。結果を図6の表に示す。また、実験例11における当該S面への離型材樹脂塗膜の形成は、図6の表に示した組成を有する樹脂塗膜用の組成物をグラビアコート法により塗布した後、ドクターブレードを用いてその厚みを2〜4μmに調節した。また、塗布した樹脂塗膜は、150℃で、30秒間加熱して焼き付け処理を行った。なお、図6の表で示したエポキシ系樹脂としてはビスフェノールA型エポキシ樹脂を用い、メラミン系樹脂としてはメチルエーテル化メラミン樹脂を用い、フッ素樹脂としてはポリテトラフルオロエチレンを用い、ジメチルシリコーンレジンとしてはジメチルポリシロキサンを用いた。
処理液:3−グリシドキシプロピルトリメトキシシラン 0.9体積%水溶液
pH5.0〜9.0
12時間常温で攪拌したもの
処理方法:スプレーコーターを用いて処理液を塗布後、100℃の空気中で5分間処理面を乾燥させる。
Cu濃度 20g/L(CuSO4として添加)
H2SO4濃度 50〜100g/L
As濃度 0.01〜2.0g/L(亜ヒ酸として添加)
液温 40℃
電流密度 40〜100A/dm2
めっき時間 0.1〜30秒
Cr濃度 1.5g/L(K2Cr2O7として添加)
Zn濃度 0.5g/L(硫酸亜鉛として添加)
pH 3.2〜4.3 (硫酸と水酸化カリウムを用いて調整)
液温 40℃
電流密度 1〜5A/dm2
めっき時間 0.1〜5秒
実施例1〜11と同様のベース基材の両側に、FR−4プリプレグ(南亜プラスティック社製)、銅箔(JX日鉱日石金属(株)製、JTC12μm(製品名))を順に重ね、3MPaの圧力で所定の加熱条件にてホットプレスを行い、4層銅張積層板を作製した。
20 :金属箔
25 :金属張積層板
30 :離型剤層
40 :絶縁層
50 :配線層
100 :ベース基材
110 :ビルドアップ層
Claims (20)
- 多層プリント配線基板の製造用のベース基材を製造する工程にして、(i)樹脂製の板状キャリアを準備する工程と、(ii)金属箔上に離型剤層がコーティングされた積層体を前記板状キャリアの少なくとも一方の主面上に積層し、又は前記板状キャリアの少なくとも一方の主面上に予め積層された金属箔上に離型剤層をコーティングし、前記板状キャリアの前記主面上に前記金属箔を介して前記離型剤層を積層する工程を含む、ベース基材を製造する工程と、
前記ベース基材の前記離型剤層上に絶縁層と配線層の組を含むビルドアップ層を1層以上積層する工程を含み、
前記絶縁層が、フェノール樹脂、ポリイミド樹脂、又はエポキシ樹脂を含み、
220℃で3時間、6時間及び9時間それぞれの加熱後における、前記ベース基材と前記ビルドアップ層の剥離強度が10gf/cm以上200gf/cm以下である、多層プリント配線基板の製造方法。 - 前記離型剤層の層厚が、0.001〜10μmの範囲内にある、請求項1に記載の多層プリント配線基板の製造方法。
- 前記ベース基材と前記ビルドアップ層を分離する工程を更に含む、請求項1又は2に記載の多層プリント配線基板の製造方法。
- 請求項3に記載の工程により得られた多層プリント配線基板の面上にビルドアップ層を積層する工程を更に含む、請求項3に記載の多層プリント配線基板の製造方法。
- 前記ビルドアップ層が、1以上の絶縁層と1以上の配線層を含む、請求項1〜4の何れか一項に記載の多層プリント配線基板の製造方法。
- 前記ビルドアップ層に含まれる1以上の配線層が、パターニングされた若しくはパターニングされていない金属箔である、請求項1〜5の何れか一項に記載の多層プリント配線基板の製造方法。
- 前記ビルドアップ層が、1以上の片面あるいは両面金属張積層板を含む、請求項1〜6の何れか一項に記載の多層プリント配線基板の製造方法。
- 前記ベース基材上に前記ビルドアップ層が積層した積層体に対してダイシング処理を施す工程を更に含む、請求項1〜7の何れか一項に記載の多層プリント配線基板の製造方法。
- 前記ダイシング処理により、前記ベース基材上に前記ビルドアップ層が積層した前記積層体には1以上の溝が形成され、当該溝により前記ビルドアップ層が個片化可能である、請求項8に記載の多層プリント配線基板の製造方法。
- 前記ビルドアップ層に含まれる1以上の絶縁層に対してビア配線を形成する工程を更に含む、請求項1〜9の何れか一項に記載の多層プリント配線基板の製造方法。
- 前記離型剤層が、次式:
- 前記離型剤層が、分子内に2つ以下のメルカプト基を有する化合物を用いてなる、請求項1〜10の何れか一項に記載の多層プリント配線基板の製造方法。
- 前記離型剤層が、次式:
- 前記離型剤層が、シリコーンと、エポキシ系樹脂、メラミン系樹脂及びフッ素樹脂から選択される何れか1つ又は複数の樹脂とで構成される樹脂塗膜である、請求項1〜10の何れか一項に記載の多層プリント配線基板の製造方法。
- 多層プリント配線基板の製造方法に用いられるベース基材であって、
樹脂製の板状キャリアと、
前記板状キャリアの少なくとも一方の主面上に積層した金属箔と、
前記金属箔を介して前記板状キャリアの前記主面上にコーティングされた離型剤層と、を備え、
前記ベース基材の前記離型剤層上に絶縁層と配線層の組を含むビルドアップ層を1層以上積層され、220℃で3時間、6時間及び9時間それぞれの加熱後における、前記ベース基材と前記ビルドアップ層の剥離強度が10gf/cm以上200gf/cm以下であり、
前記絶縁層が、フェノール樹脂、ポリイミド樹脂、又はエポキシ樹脂を含む、ベース基材。 - 前記離型剤層の層厚が、0.001〜10μmの範囲内にある、請求項15に記載のベース基材。
- 前記離型剤層が、分子内に2つ以下のメルカプト基を有する化合物を用いてなる、請求項15又は16に記載のベース基材。
- 前記離型剤層が、シリコーンと、エポキシ系樹脂、メラミン系樹脂及びフッ素樹脂から選択される何れか1つ又は複数の樹脂とで構成される樹脂塗膜である、請求項15又は16に記載のベース基材。
- 多層プリント配線基板の製造方法に用いられるベース基材であって、
樹脂製の板状キャリアと、
前記板状キャリアの少なくとも一方の主面上に積層した金属箔と、
前記金属箔を介して前記板状キャリアの前記主面上に積層した離型剤層と、を備え、
前記離型剤層が、次式:
- 多層プリント配線基板の製造方法に用いられるベース基材であって、
樹脂製の板状キャリアと、
前記板状キャリアの少なくとも一方の主面上に積層した金属箔と、
前記金属箔を介して前記板状キャリアの前記主面上に積層した離型剤層と、を備え、
前記離型剤層が、次式:
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